RDS(on) VDSS ID25 1200V 1.4A TO-263 (IXTA) Symbol

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RDS(on) VDSS ID25 1200V 1.4A TO-263 (IXTA) Symbol

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IXTA1R4N120P IXTP1R4N120P
RDS(on)
VDSS ID25
1200V 1.4A
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 dV/dt Tstg TSOLD Weight
Test Conditions 25°C 150°C 25°C 150°C, Continuous Transient 25°C 25°C, pulse width limited 25°C 25°C IDM, VDSS, 150°C 25°C
Maximum Ratings 1200 1200 +150 +150 V/ns Nm/lb.in.
(TAB)
TO-220 (IXTP)
(TAB)
Gate Source
Drain Drain
Features International standard packages Unclamped Inductive Switching (UIS) rated package inductance easy drive protect Advantages Easy mount Space savings High power density
1.6mm (0.062) from case Plastic body Mounting torque TO-263 TO-220 (TO-220)
1.13
Symbol Test Conditions 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) 250A VGS, 100A ±20V, VDSS 125°C
Characteristic Values Min. Typ. Max. 1200
Applications: High Voltage Switched-mode resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits Lasers Pulsers, Spark Igniters, Generators High Voltage DC-DC converters High Voltage DC-AC inverters
10.5
10V, ID25, Note
2008 IXYS CORPORATION, rights reserved
DS99871A (04/08)
IXTA1R4N120P IXTP1R4N120P
Symbol Test Conditions 25°C, unless otherwise specified) Ciss Coss Crss td(on) td(off) Qg(on) RthJC RthCS VDS= 20V, ID25, Note 25V, 1MHz Resistive Switching Times 10V, VDSS, ID25 (External) Characteristic Values Min. Typ. Max. 24.8 12.8 0.50 1.45 °C/W °C/W
Pins: Gate Drain
TO-220 (IXTP) Outline
VGS= 10V, VDSS, ID25
(TO-220)
Source-Drain Diode Symbol Test Conditions
Characteristic Values 25°C, unless otherwise specified) Min. Typ. Max.
Repetitive, pulse width limited Note 1.4A, -di/dt 100A/s, 100V,
Note Pulse test, duty cycle,
TO-263 (IXTA) Outline
IXYS reserves right change limits, test conditions, dimensions.
IXYS MOSFETs IGBTs covered 4,835,592 moreof following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 6,306,728 6,404,065 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 6,710,405 6,759,692 7,063,975 6,710,463 6,771,478 7,071,537 7,157,338B2
IXTA1R4N120P IXTP1R4N120P
Fig. Output Characteristics
Fig. Output Characteristics
Amperes
Amperes
Volts
Volts
Fig. RDS(on) Normalized 0.7A Value Junction Temperature
Fig. RDS(on) Normalized 0.7A Value Drain Current
RDS(on) Normalized
1.4A 0.7A
RDS(on) Normalized
Degrees Centigrade
Amperes
Fig. Maximum Drain Current Case Temperature
Fig. Input Admittance
Amperes
Amperes
Degrees Centigrade
Volts
2008 IXYS CORPORATION, rights reserved
IXTA1R4N120P IXTP1R4N120P
Fig. Transconductance
Fig. Forward Voltage Drop Intrinsic Diode
Siemens
Amperes
Amperes
Volts
Fig. Gate Charge
600V 0.7A 10,000
Fig. Capacitance
Capacitance PicoFarads
Ciss
10mA
1,000
Volts
Coss
Crss
NanoCoulombs
Volts
Fig. Maximum Transient Thermal Impedance
10.00
Z(th)JC
1.00
0.10
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Seconds
IXYS reserves right change limits, test conditions, dimensions.
IXYS REF: T_1R4N120P(2C) 04-01-08-A

RDS(on) VDSS ID25 1200V 1.4A TO-263 (IXTA) Symbol

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