TO-263 (IXTA) IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N

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TO-263 (IXTA) IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N

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Trench Gate Power MOSFET
TO-263 (IXTA)
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
VDSS ID25
RDS(on)
250V
Typical avalanche 300V TO-262 (IXTI) TO-220 (IXTP)
TO-247 (IXTH)
(TAB)
(TAB)
(TAB)
(TAB)
Symbol VDSS VDGR VGSM ID25 Tstg Weight
Test Conditions 25°C 150°C 25°C 150°C, Transient 25°C* 25°C, pulse width limited 25°C 25°C 25°C
Maximum Ratings +150 +150 Nm/lb.in. N/lb. TO-3P (IXTQ)
Drain Drain
(TAB)
Gate Source
1.6mm (0.062in.) from case Plastic body 10seconds
Features International standard packages Avalanche rated package inductance easy drive protect Advantages Easy mount Space savings High power density
Mounting Torque TO-220,TO-3P,TO247 1.13 Mounting Force TO-262,TO-263 10.65 2.2.14.6 TO-262,TO-263 TO-220 TO-3P TO-247
Symbol Test Conditions 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS, 20V, VDSS 125°C
Characteristic Values Min. Max.
Applications DC-DC converters Battery chargers Switched-mode resonant-mode power supplies choppers motor control Uninterruptible power supplies High speed power switching applications
10V, ID25, Note
2007 IXYS CORPORATION, rights reserved
DS99663C(10/07)
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
Symbol Test Conditions 25°C unless otherwise specified) Ciss Coss Crss td(on) td(off) Qg(on) RthJC RthCH TO-220 TO-3P, TO-247 0.50 0.21 VGS= 10V, VDSS Resistive Switching Times 15V, VDSS, ID25 (External) 25V, 1MHz VDS= 10V, ID25, Note Characteristic Values Min. Typ. Max. 4500 0.27
Source-Drain Diode Symbol Test Conditions 25°C unless otherwise specified) Repetitive, pulse width limited Note 38A, -di/dt 250A/s 100V, Characteristic Values Min. Typ. Max.
Notes: Pulse test, 300s; duty cycle,
Current limited external lead limit.
PRELIMINARY TECHNICAL INFORMATION
product presented herein under development. Technical Specifications offered derived from data gathered during objective characterizations preliminary engineering lots; also contain some information supplied during pre-production design evaluation. IXYS reserves right change limits, test conditions, dimensions without notice.
IXYS reserves right change limits, test conditions, dimensions.
IXYS MOSFETs IGBTs covered 4,835,592 moreof following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 6,306,728 6,404,065 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 6,710,405 6,759,692 7,063,975 6,710,463 6,771,478 7,071,537 7,157,338B2
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
TO-263 (IXTA) Outline TO-220 (IXTP) Outline
Pins:
Gate
Drain
TO-247 (IXTH) Outline
Dim. Millimeter Min. Max. 2.54 1.65 2.13 2.87 3.12 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
TO-3P (IXTQ) Outline
Terminals: Gate Source
Drain Drain
Leaded (IXTI) Outline
2007 IXYS CORPORATION, rights reserved
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. Output Characteristics
Fig. Extended Output Characteristics
Amperes
Amperes
Volts
Volts
Fig. Output Characteristics
Fig. RDS(on) Normalized Value Junction Temperature
RDS(on) Normalized
Amperes
Volts
Degrees Centigrade
Fig. RDS(on) Normalized Value Drain Current
Fig. Drain Current Case Temperature
RDS(on) Normalized
Amperes
Amperes
Degrees Centigrade
IXYS reserves right change limits, test conditions, dimensions.
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. Input Admittance
Fig. Transconductance
Siemens
Amperes
Volts
Amperes
Fig. Forward Voltage Drop Intrinsic Diode
125V 10mA
Fig. Gate Charge
Amperes
Volts
Volts
NanoCoulombs
Fig. Capacitance
10,000 1.00
Fig. Maximum Transient Thermal Impedance
Capacitance PicoFarads
Ciss
Coss
Z(th)JC
1,000
0.10
Crss 0.01 0.0001
0.001
0.01
Volts
Pulse Width Seconds
2007 IXYS CORPORATION, rights reserved
IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T
Fig. Resistive Turn-on Rise Time Junction Temperature
125V
Fig. Resistive Turn-on Rise Time Drain Current
Nanoseconds
Nanoseconds
125V
Degrees Centigrade
Amperes
Fig. Resistive Turn-on Switching Times Gate Resistance
Fig. Resistive Turn-off Switching Times Junction Temperature
125V
td(on)
d(on)
d(of
Nanoseconds
Nanoseconds
Nanoseconds
Nanoseconds
td(off)
3.3, 125V
Ohms
Degrees Centigrade
Fig. Resistive Turn-off Switching Times Drain Current
Fig. Resistive Turn-off Switching Times Gate Resistance
125V
td(off)
Nanoseconds
Nanoseconds
d(of
125V
td(off)
Nanoseconds
Nanoseconds
3.3,
38A,
Amperes
Ohms
IXYS reserves right change limits, test conditions, dimensions.
IXYS REF: T_76N25T(6E)06-28-06

TO-263 (IXTA) IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N

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