IXBK55N300 IXBX55N300 VCES IC110 VCE(sat) 3000V 3.2V
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High Voltage, High Gain BiMOSFETMonolithic Bipolar Transistor
IXBK55N300 IXBX55N300
VCES IC110
VCE(sat)
3000V 3.2V
TO-264 (IXBK)
Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 SSOA (RBSOA) (SCSOA) Tstg TSOLD Weight
Test Conditions 25°C 150°C 25°C 150°C, Continuous Transient 25°C Chip Capability 25°C Lead Limit 110°C 25°C,
Maximum Ratings 3000 3000 @0.8 VCES +150 +150 Nm/lb.in. N/lb. Features High Blocking Voltage International Standard Packages Conduction Losses High Current Handling Capability Gate Turn-On Drive Simplicity Applications Uninterruptible Power Supplies (UPS) Switched-Mode Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators
(TAB)
PLUS247(IXBX)
15V, 125°C, Clamped Inductive Load 15V, 125°C, 1250V, Non-Repetitive 25°C
(TAB) Collector Collector
Gate Emitter
Maximum Lead Temperature Soldering (0.062 in.) from Case Mounting Torque (TO-264 Mounting Force (PLUS247 TO-264 PLUS247
1.13/10 20.120/4.5.27
Symbol Test Conditions 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) 1mA, 4mA, 125°C 55A, 15V, Note 125°C
Characteristic Values Min. Typ. Max. 3000
VCES,
±200
Advantages Easy Mount Space Savings High Power Density
2009 IXYS CORPORATION, Rights Reserved
DS100158(06/09)
IXBK55N300 IXBX55N300
Symbol Test Conditions 25°C Unless Otherwise Specified) Cies Coes Cres td(on) td(off) td(on) td(off) RthJC RthCS 0.15 Resistive Switching Times, 25°C 110A, 1250V, Resistive Switching Times, 125°C 110A, 1250V, 55A, 15V, 1000V 25V, 1MHz 55A, 10V, Note Characteristic Values Min. Typ. Max. 7300 0.20 °C/W °C/W TO-264 (IXBK) Outline
Reverse Diode Symbol Test Conditions 25°C Unless Otherwise Specified) 55A, Note 28A, -diF/dt 100A/s 100V, Characteristic Values Min. Typ.
PLUS 247(IXBX) Outline
Terminals:
Note
Pulse Test, 300s, Duty Cycle, Additional provisions lead-to-lead isolation required >1200V.
Gate Drain (Collector) Source (Emitter)
Dim.
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 2.92 5.21 2.54 2.16 1.40 2.13 3.12
Inches Min. Max. .190 .090 .075 .045 .075 .115 .205 .100 .085 .055 .084 .123
ADVANCE TECHNICAL INFORMATION
product presented herein under development. Technical Specifications offered derived from subjective evaluation design, based upon prior knowledge experience, constitute "considered reflection" anticipated result. IXYS reserves right change limits, test conditions, dimensions without notice.
IXYS Reserves Right Change Limits, Test Conditions, Dimensions.
IXYS MOSFETs IGBTs covered 4,835,592 moreof following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 6,306,728 6,404,065 6,534,343 6,583,505
0.61 0.80 20.80 21.34 15.75 16.13 5.45 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
.024 .031 .819 .840 .620 .635 .215 .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 6,710,405 6,759,692 7,063,975 6,710,463 6,771,478 7,071,537
IXBK55N300 IXBX55N300
Fig. Output Characteristics
Fig. Extended Output Characteristics
Amperes
Amperes
Volts
Volts
Fig. Output Characteristics
Fig. Dependence VCE(sat) Junction Temperature
VCE(sat) Normalized
110A
Amperes
27.5A
Volts
Degrees Centigrade
Fig. Collector-to-Emitter Voltage Gate-to-Emitter Voltage
27.5A
Fig. Input Admittance
110A
Amperes
Volts
Volts
Volts
2009 IXYS CORPORATION, Rights Reserved
IXYS REF: B_55N300 (8T) 6-08-09
IXBK55N300 IXBX55N300
Fig. Transconductance
Fig. Forward Voltage Drop Intrinsic Diode
Siemens
Amperes
Amperes
Volts
Fig. Gate Charge
1000V 100,000
Fig. Capacitance
Capacitance PicoFarads
10mA
10,000 Cies 1,000 Coes Cres
Volts
NanoCoulombs
Volts
Fig. Reverse-Bias Safe Operating Area
1.00
Fig. Maximum Transient Thermal Impedance
Amperes
Z(th)JC
1000 1400 1800 2200 2600 3000
0.10
0.01 0.0001
0.001
0.01
Volts
Pulse Width Seconds
IXYS Reserves Right Change Limits, Test Conditions, Dimensions.
IXBK55N300 IXBX55N300
Fig. Resistive Turn-on Rise Time Junction Temperature
1250V
Fig. Resistive Turn-on Rise Time Collector Current
Nanoseconds
Nanoseconds
1250V
220A
110A
Degrees Centigrade
Amperes
Fig. Resistive Turn-on Switching Times Gate Resistance
Fig. Resistive Turn-off Switching Times Junction Temperature
850V
td(on)
1250V
td(off)
d(on) Nanoseconds
d(off) Nanoseconds
Nanoseconds
110A 220A
Nanoseconds
220A 110A
Ohms
Degrees Centigrade
Fig. Resistive Turn-off Switching Times Collector Current
Fig. Resistive Turn-off Switching Times Gate Resistance
1250V
td(off)
1250V
td(off)
d(off) Nanoseconds
Nanoseconds
110A
d(off) Nanoseconds
Nanoseconds
220A
Amperes
Ohms
2009 IXYS CORPORATION, Rights Reserved
IXYS REF: B_55N300 (8T) 6-08-09
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