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Table Contents
Vishay Semiconductors
Infrared Emitters Detectors
SELECTOR GUIDE GENERAL INFORMATION
Vishay Semiconductor Type Designation Code. Physics Technology Measurement Techniques. Component Construction Packaging Order Information Assembly Instructions Quality Information Safety Risk Assessment Light Infrared Emitting Diodes. Safety Risk Assessment Infrared Emitting Diodes According DIN) 60825-1.
DATASHEETS INFRARED EMITTERS
CQY36N. CQY37N. TSAL4400 TSAL5100 TSAL5300 TSAL6100 TSAL6100X01. TSAL6200 TSAL6400 TSAL7200 TSAL7300 TSAL7400 TSAL7600 TSFF5210 TSFF5410 TSFF5510 TSFF6210 TSHA4400, TSHA4401 TSHA5200, TSHA5201, TSHA5202, TSHA5203. TSHA5500, TSHA5501, TSHA5502, TSHA5503. TSHA6200, TSHA6201, TSHA6202, TSHA6203. TSHA6500, TSHA6501, TSHA6502, TSHA6503. TSHF4410. TSHF5210. TSHF5410. TSHF6210. TSHF6410. TSHG5210 TSHG5410 TSHG6210 TSHG6410 TSHG8200 TSHG8400 TSKS5400. TSKS5400S TSMF1000, TSMF1020, TSMF1030. TSML1000, TSML1020, TSML1030, TSML1040. TSSF4500 TSSS2600. TSTA7100 TSTA7300 TSTA7500 TSTS7100 TSTS7300 TSTS7500 TSUS4300.
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Table Contents
Vishay Semiconductors
Infrared Emitters Detectors
TSUS4400 TSUS5200, TSUS5201, TSUS5202 TSUS5400, TSUS5401, TSUS5402 VSLB3940. VSMF3710 VSMF4710 VSMF4720 VSMG2700 VSMG3700 VSML3710 VSMS3700.
DATASHEETS PHOTO DETECTORS
BP104, BP104S BPV10. BPV10NF BPV11. BPV11F. BPV22F. BPV22NF, BPV22NFL BPV23F, BPV23FL BPV23NF, BPV23NFL BPW16N BPW17N BPW20RF BPW21R BPW24R BPW34, BPW34S BPW41N BPW46. BPW76A, BPW76B. BPW77NA, BPW77NB. BPW82. BPW83. BPW85A, BPW85B, BPW85C BPW96B, BPW96C. TEFT4300 TEKS5400. TEKT5400S TEMD1000, TEMD1020, TEMD1030, TEMD1040 TEMD5010X01 TEMD5020X01 TEMD5110X01 TEMD5120X01 TEMD5510FX01 TEMD6010FX01 TEMT1000, TEMT1020, TEMT1030, TEMT1040. TEMT1520 TEMT6000X01. TEMT6200FX01. TEPT4400. TEPT5600. TEPT5700. TESP5700. TEST2600. VEMT3700 VEMT3700F. VEMT4700
GLOSSARY
Reliability Statistics Glossary Symbols Terminology
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Contents
Selector Guide
Selector Guide
Selector Guide
Vishay Semiconductors
Selector Guide
HIGH SPEED INFRARED EMITTERS, GaAlAs DOUBLE HETERO
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
SMD, PLCC-2 VSMF3710 1.6) SMD, clear epoxy SMD, clear epoxy SMD, clear epoxy SMD, clear epoxy, CMOS camera illumination SMD, clear epoxy, CMOS camera illumination
VSMF4710
1.8)
VSMF4720
8553
1.45 1.6)
VSMG2700
1.8)
VSMG3700 SMD, dome, clear epoxy
1.8)
TSMF1000
16758-1
1.5)
SMD, clear mold compound
TSMF1020
16758-2
1.5)
SMD, clear mold compound
TSMF1030
16758-3
1.5)
SMD, clear mold compound
leads with stand-off, clear epoxy TSFF5210 TSFF5410 TSHF5210 TSHF5410
8390
1.8) 1.8) 1.6) 1.6) 1.8) 1.8)
stand-off, clear epoxy stand-off, clear epoxy stand-off, clear epoxy stand-off, clear epoxy stand-off, clear epoxy stand-off, clear epoxy
TSHG5210 TSHG5410
leads with stand-off, clear epoxy stand-off, clear epoxy
TSFF5510
21061
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Document Number: 81898 Rev. 1.0, 16-Sep-08
Selector Guide
Selector Guide
Vishay Semiconductors
HIGH SPEED INFRARED EMITTERS, GaAlAs DOUBLE HETERO
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
leads without stand-off, clear epoxy TSFF6210 TSHF6210 TSHF6410 TSHG6210
8389
1.8) 1.6) 1.6) 1.8) 1.8) 1.8) 1.8)
clear epoxy clear epoxy clear epoxy clear epoxy clear epoxy clear epoxy clear epoxy clear epoxy clear epoxy
TSHG6410 TSHG8200 TSHG8400
T-1, clear epoxy TSHF4410 VSLB3940 1.8) 1.35 1.6)
8636
Side view,
TSSF4500
8688
1.35 1.6)
clear epoxy
INFRARED EMITTERS, GaAlAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
leads with stand-off, clear epoxy TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5500
8390
1.8) 1.8) 1.8) 1.8) 1.8) 1.8) 1.8) 1.8)
TSHA5501 TSHA5502 TSHA5503
Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy Stand off, clear epoxy
Document Number: 81898 Rev. 1.0, 16-Sep-08
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Selector Guide
Vishay Semiconductors
Selector Guide
INFRARED EMITTERS, GaAlAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) 1.8) 1.8) 1.8) 1.8) 1.8) 1.8) 1.8) 1.8) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
leads without stand-off, clear epoxy TSHA6200 TSHA6201 TSHA6202 TSHA6203 TSHA6500
8389
Clear epoxy Clear epoxy Clear epoxy Clear epoxy Clear epoxy Clear epoxy Clear epoxy Clear epoxy
TSHA6501 TSHA6502 TSHA6503
T-1, clear epoxy TSHA4400 TSHA4401
8636
1.8) 1.8)
Clear epoxy Clear epoxy
Metal can, TO-18 Hermetically sealed
TSTA7100
8483
1.8)
TSTA7300
948642
1.8)
Hermetically sealed
TSTA7500
8400
3.5)
1.8)
Hermetically sealed
HIGH POWER INFRARED EMITTERS, GaAlAs/GaAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
SMD, PLCC-2 SMD, clear epoxy
VSML3710
8553
1.35 1.6)
SMD, dome, clear epoxy SMD, clear mold compound SMD, clear mold compound
TSML1000
16758-1
1.5)
TSML1020
16758-2
1.5)
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Document Number: 81898 Rev. 1.0, 16-Sep-08
Selector Guide
Selector Guide
Vishay Semiconductors
HIGH POWER INFRARED EMITTERS, GaAlAs/GaAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
SMD, dome, clear epoxy TSML1030
16758-3
1.5)
SMD, clear mold compound SMD, clear mold compound
TSML1040
16758-4
1.5)
leads with stand-off, blue-gray epoxy TSAL5100 TSAL5300
11505
1.35 1.6) 1.35 1.6)
Stand-off, blue-gray epoxy Stand-off, blue-gray epoxy Blue-gray epoxy Blue-gray epoxy Blue-gray epoxy Blue-gray epoxy Clear epoxy Clear epoxy Clear epoxy Clear epoxy
leads without stand-off, blue-gray epoxy TSAL6100 TSAL6100X01 TSAL6200
8389
1.35 1.6) 1.35 1.6) 1.35 1.6) 1.35 1.6) 1.35 1.6) 1.35 1.6) 1.35 1.6) 1.35 1.6)
TSAL6400 TSAL7200 TSAL7300 TSAL7400 TSAL7600
leads without stand-off, clear epoxy
8389
T-1, blue-gray epoxy
TSAL4400
8636
1.35 1.6)
Clear epoxy
INFRARED EMITTERS, GaAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
SMD, PLCC-2 SMD, clear epoxy
VSMS3700
8553
1.7)
Document Number: 81898 Rev. 1.0, 16-Sep-08
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Selector Guide
Vishay Semiconductors
INFRARED EMITTERS, GaAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
Selector Guide
leads with stand-off, blue epoxy TSUS5200 TSUS5201 TSUS5202 TSUS5400
8390
1.7) 1.7) 1.7) 1.7) 1.7) 1.7)
Stand-off, blue epoxy Stand-off, blue epoxy Stand-off, blue epoxy Stand-off, blue epoxy Stand-off, blue epoxy Stand-off, blue epoxy
TSUS5401 TSUS5402 T-1, blue epoxy
TSUS4300
8636-1
1.7)
Emerged rim, blue epoxy
TSUS4400
8636
1.7)
Small rim, blue epoxy
Side view, clear epoxy
TSSS2600
8672
1.0)
1.6)
Clear epoxy
TSKS5400S
14354
1.7)
Clear mold compound, Short leads
TSKS5400
14354-1
1.7)
Clear mold compound, long leads
Metal can, TO-18 Hermetically sealed
TSTS7100
8483
1.7)
TSTS7300
948642
1.7)
Hermetically sealed
TSTS7500
8400
1.25)
1.7)
Hermetically sealed
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Document Number: 81898 Rev. 1.0, 16-Sep-08
Selector Guide
Selector Guide
Vishay Semiconductors
INFRARED EMITTERS, GaAs
PART NUMBER ANGLE RADIANT FORWARD INTENSITY VOLTAGE (mW/sr) TEST CONDITION (mA) RISE TIME (ns) REMARKS PAGE
blue epoxy
CQY36N
8638
0.7)
1.6)
Flat top, blue epoxy
CQY37N
8638-2
2.2)
1.6)
Lens, blue epoxy
SILICON PHOTOTRANSISTORS
BANDWIDTH PART NUMBER
(nm) SMD, PLCC-2
(nm)
ANGLE
COLLECTOR LIGHT CURRENT (mA)
RISE TIME
REMARKS
PAGE
VEMT3700
8553
1080
0.25)
Clear epoxy, detector visible radiation Black epoxy, filter matched with emitters
VEMT3700F
19032
1050
0.25)
SMD, PLCC-3 Clear epoxy, detector visible radiation
VEMT4700
8554
1080
0.25)
SMD, dome Black mold compound, filter matched with emitters Black mold compound, filter matched with emitter Black mold compound, filter matched with emitter
TEMT1000
16757-1
TEMT1020
16757-2
TEMT1030
16757-3
Document Number: 81898 Rev. 1.0, 16-Sep-08
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Selector Guide
Vishay Semiconductors
SILICON PHOTOTRANSISTORS
BANDWIDTH PART NUMBER
Selector Guide
(nm) SMD, dome
(nm)
ANGLE
COLLECTOR LIGHT CURRENT (mA)
RISE TIME
REMARKS
PAGE
TEMT1040
16757-4
Black mold compound, filter matched with emitter Clear mold, detector visible radiation Leads with stand-off, clear epoxy, detector visible radiation, base terminal Leads with stand-off, black epoxy, filter matched with GaAs emitters, base terminal Leads with stand-off, clear epoxy, detector visible radiation Leads with stand-off, clear epoxy, detector visible radiation Clear epoxy, detector visible radiation Clear epoxy, detector visible radiation Clear epoxy, detector visible radiation Black epoxy, filter matched with emitters
TEMT1520
19449
1080
BPV11
12785
1080
BPV11F
12784
BPW96B
1080
8391
BPW96C
1080
BPW85A 1080
BPW85B
20815
1080
BPW85C
1080
TEFT4300
8636-2
1050
0.8)
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Document Number: 81898 Rev. 1.0, 16-Sep-08
Selector Guide
Selector Guide
Vishay Semiconductors
SILICON PHOTOTRANSISTORS
BANDWIDTH PART NUMBER
(nm)
(nm)
ANGLE
COLLECTOR LIGHT CURRENT (mA)
RISE TIME
REMARKS
PAGE
BPW16N
8638
1040
0.14 0.07)
Flat top, clear epoxy, detector visible radiation Lens, clear epoxy, detector visible radiation
BPW17N
8638-1
1040
0.5)
Side view Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters
TEST2600
8673
30/60
1.0)
TEKT5400S
16733
2.0)
Metal can, TO-18 BPW76A BPW76B
8401
1080 1080 1080 1080
0.6)
Hermetically sealed Hermetically sealed Hermetically sealed Hermetically sealed
BPW77NA BPW77NB
AMBIENT LIGHT SENSOR, SILICON PHOTOTRANSISTORS
BANDWIDTH PART NUMBER
(nm)
(nm)
ANGLE
COLLECTOR LIGHT CURRENT IPCE
PAGE
SMD, 1206
TEMT6000X01
18527
17.5)
SMD, 0805
TEMT6200FX01
20043
Document Number: 81898 Rev. 1.0, 16-Sep-08
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Selector Guide
Vishay Semiconductors
Selector Guide
AMBIENT LIGHT SENSOR, SILICON PHOTOTRANSISTORS
BANDWIDTH PART NUMBER
(nm)
(nm)
ANGLE
COLLECTOR LIGHT CURRENT IPCE
PAGE
leads with stand-off
TEPT5600
8390
125)
TEPT5700
20118_1
TEPT4400
20815
AMBIENT LIGHT DETECTORS, PHOTODIODES
BANDWIDTH PART NUMBER
(nm)
(nm)
ANGLE
REVERSE LIGHT CURRENT
PAGE
SMD, view
TEMD5510FX01
20535
0.8)
SMD, 1206
TEMD6010FX01
18527
0.04 0.03)
SILICON PHOTODIODES
BANDWIDTH PART NUMBER SMD, dome TEMD1000
16757-1
(nm)
(nm)
ANGLE
SENSITIVITY
RISE TIME
REMARKS
PAGE
1050
0.004
Black mold compound, filter matched with emitters Black mold compound, filter matched with emitters
TEMD1020
16757-2
1050
0.004
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Document Number: 81898 Rev. 1.0, 16-Sep-08
Selector Guide
Selector Guide
Vishay Semiconductors
SILICON PHOTODIODES
BANDWIDTH PART NUMBER SMD, dome TEMD1030
16757-3
(nm)
(nm)
ANGLE
SENSITIVITY
RISE TIME
REMARKS
PAGE
1050
0.004
Black mold compound, filter matched with emitters Black mold compound, filter matched with emitters Clear epoxy, detector visible radiation Clear epoxy, detector visible radiation Black mold compound, filter matched with emitters Black mold compound, filter matched with emitters
TEMD1040
16757-4
to1050
0.004
SMD, view TEMD5010X01 1100
TEMD5020X01
20535
1100
TEMD5110X01
1050
20535_1
TEMD5120X01
1050
leads with stand-off Leads with stand-off, clear epoxy, detector visible radiation Leads with stand-off, black epoxy, filter matched with emitters Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters
BPV10
8390
1100
0.0025
BPV10NF
16140-1
1050
0.0025
Side view, lens BPV22F 1050
BPV22NF
1050
8633
BPV23F
1050
0.07
BPV23NF
1050
0.07
Document Number: 81898 Rev. 1.0, 16-Sep-08
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SILICON PHOTODIODES
BANDWIDTH PART NUMBER Side view, lens BPV22NFL 1050 Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters Black epoxy, filter matched with emitters
Selector Guide
(nm)
(nm)
ANGLE
SENSITIVITY
RISE TIME
REMARKS
PAGE
BPV23FL
8633-1
1050
0.07
BPV23NFL
1050
0.07
TESP5700
16936
0.01
SILICON PHOTODIODES
BANDWIDTH PART NUMBER Side view Black epoxy, filter matched with emitters
(nm)
(nm)
ANGLE
SENSITIVITY
RISE TIME
REMARKS
PAGE
BPW41N
1050
8480
BPW82
1050
Black epoxy, filter matched with emitters
BPW46
8632
1100
Flat top, clear epoxy, detector visible radiation
BPW83
1050
Black epoxy, filter matched with emitters
8490
Metal can, TO-18
BPW24R
948642
1050
0.007
Lens, hermetically sealed
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Selector Guide
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SILICON PHOTODIODES
BANDWIDTH PART NUMBER view BP104 1050 Black mold compound, filter matched with emitters Packed tubes, black mold compound, filter matched emitters Clear mold compound, detector visible radiation Packed tubes, clear mold compound, detectorfor visible radiation
(nm)
(nm)
ANGLE
SENSITIVITY
RISE TIME
REMARKS
PAGE
BPW104S
948386_1
1050
BPW34
1100
BPW34S
8583
1100
SILICON PHOTO SCHMITT TRIGGER
PART NUMBER Side view lens Black mold compound, filter matched with emitters, digital output, open collector BANDWIDTH
(nm)
ANGLE
SENSITIVITY (W/cm2)
REMARKS
PAGE
TEKS5400
14355
1020
SILICON PHOTODIODE
PART NUMBER Metal can, TO-5 Hermetically sealed, detector visible radiation BANDWIDTH
(nm)
ANGLE
SENSITIVITY RISE TIME
REMARKS
PAGE
BPW20RF
8482
1040
BPW21R
8394
4.5)
Hermetically sealed, filter matched with human spectrum
Document Number: 81898 Rev. 1.0, 16-Sep-08
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Contents
Vishay Semiconductor Type Designation Code. Physics Technology Measurement Techniques.
General Information
Component Construction Packaging Order Information Assembly Instructions Quality Information Safety Risk Assessment Light Infrared Emitting Diodes Safety Risk Assessment Infrared Emitting Diodes According DIN) 60825-1
Type Designation Code
Vishay Semiconductors
Type Designation Code
DETECTORS
Vishay Semiconductor Series Plastic filter Plastic Side view Side view mold Package varieties Detector Technology Photodiode photodiode Photo Schmitt-Trigger Phototransistor Internal classification
18746
EMITTERS
Internal classification Series Extended power High speed GaAlAs, Side view casted Metal GaAs, Side view mold Leaded Package design Dome without stand-offs with stand-offs without stand-offs Main type Dome Contact type Yoke Axial
Vishay Semiconductor
emitter
18747
GaAlAs GaAlAs/double hetero nm/850 GaAlAs/double hetero GaAlAs/GaAs GaAs: Bulk emitter
Selection type
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Document Number: 80083 Rev. 1.3, 17-Jun-08
Physics Technology
Vishay Semiconductors
Physics Technology
EMITTERS
Materials Infrared emitting diodes (IREDs) produced from range different III-V compounds. Unlike elemental semiconductor silicon, compound III-V semiconductors consist more different elements group three (e.g., five (e.g., periodic table. bandgap energies these compounds vary between 0.18 However, IREDs considered here emit near infrared spectral range between 1000 and, therefore, selection materials limited GaAs mixed crystal Ga1-XAlXAs, 0.8, made from pure compounds GaAs AlAs. Infrared radiation produced radiative recombination electrons holes from conduction valence bands. Emitted photon energy, therefore, corresponds closely bandgap energy emission wavelength calculated according formula 1.240/Eg (eV). Internal efficiency depends band structure, doping material doping level. Direct bandgap materials offer high efficiencies, because phonons needed recombination electrons holes. GaAs direct material Ga1-XAlXAs direct 0.44. Doping species provides best efficiencies shifts emission wavelength below bandgap energy into infrared spectral range about typically. Charge carriers injected into material junctions. Junctions high injection efficiency readily formed GaAs Ga1-XAlXAs. P-type conductivity obtained with metals valency two, such n-type conductivity with elements valency six, such However, silicon valency four occupy sites III-valence V-valence atoms, and, therefore, acts donor acceptor. Conductivity type depends primarily material growth temperature. employing exact temperature control, junctions grown with same doping species both sides junction. other hand, also valency four, occupies group sites high temperatures i.e., p-type. Only mono crystalline material used IRED production. mixed crystal system Ga1-XAlXAs, 0.8, lattice constant varies only about 10-3. Therefore, mono crystalline layered structures different Ga1-XAlXAs compositions produced with extremely high structural quality. These structures useful because bandgap shifted from 1.40 (GaAs) values beyond which enables transparent windows heterogeneous structures fabricated. Transparent windows another suitable means increase efficiency, heterogeneous structures provide shorter switching times higher efficiency. Such structures termed single hetero (SH) double hetero structures (DH). structures consist normally layers that confine layer with much smaller bandgap.
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best production method materials needed liquid phase epitaxy (LPE). This method uses Ga-solutions containing possibly doping substance. solution saturated high temperature, typically GaAs substrates dipped into liquid. solubility decreases with decreasing temperature. this epitaxial layers grown slow cooling solution. Several layers differing composition obtained using different solutions after another, needed e.g. DHs. liquid phase epitaxial reactors, production quantities wafers, depending type structure required, handled.
IRED CHIPS CHARACTERISTICS
present, most popular IRED chip made only from GaAs. structure chip displayed figure
GaAs GaAs
GaAs Substrate
8200
Fig.
n-type substrate, Si-doped layers grown liquid phase epitaxy from same solution producing emission wavelegth Growth starts n-type high temperature becomes p-type below about structured Al-contact p-side large area Au:Ge contact back side provide very series resistance. angular distribution emitted radiation displayed figure
8197
Fig. www.vishay.com
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Physics Technology
package chip provide good collection efficiency radiation emitted sideways, diminish refractive index step between chip 3.6) 1.0) with epoxy refractive index 1.55. this way, output power chip increased factor assembled device. chip described most cost-efficient one. forward voltage lowest possible value. Total series resistance typically only 0.60 output power linearity (defined optical output power increase, divided current increase between high. Relevant data chip typical assembled device given table technology used chip emitting eliminates absorbing substrate uses only thick epitaxial layer. chip shown figure
Ge/Au
8198
Fig.
GaAlAs
GaAlAs
8201
shorter wavelength, Ga1-XAlXAs chip described above offers specific advantages combination with detector. Integrated opto ICs, like amplifiers Schmitt Triggers, have higher sensitivities shorter wavelengths. Similarly, phototransistors also more sensitive. Finally, frequency bandwidth diodes higher shorter wavelengths. This chip also advantage having high linearity beyond forward voltage, however, higher than voltage GaAs chip. Table (see "Symbols Terminology") provides more data chip. technology combining some advantages technologies described above summarized figure
GaAlAs GaAs GaAs
Fig.
Originally, GaAs substrate adjacent n-side. Growth Ga0.7Al0.3As started n-type became p-type first case through specific properties doping material characteristic feature Ga-Al-As phase system causes Al-content growing epitaxial layer decrease. This causes Al-concentration junction drop (Ga0.92Al0.08As), producing emission wavelength During further growth Al-content approaches zero. gradient Al-content correlated gradient bandgap energy produce emission band relatively large half width. transparency large bandgap material results high external efficiency this type chip. chip mounted n-side front side metallization Au:Ge/Au, whereas reverse side metallization Au:Zn. angular distribution emitted radiation displayed figure
GaAs Substrate
8202
Fig.
Starting with n-type substrate, p-type GaAs layers grown similar epitaxy standard GaAs:Si diode. After this, highly transparent window layer Ga1-XAlXAs, doped p-type grown. upper contact p-side made rear side contact Au:Ge. angular distribution emitted radiation shown figure
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Anode
GaAlAs -GaAs
Cathode
8199
GaAlAs
12781
Fig.
Fig.
This chip type combines relatively forward voltage with high electro-optical efficiency, offering optimized combination advantageous characteristics other chips. Refer again table (see "Symbols Terminology") more details. mentioned previous section, double heterostructures (DH) provide even higher efficiencies faster switching times. schematic representation such chip shown figure
active layer depicted thin layer between type Ga1-XAlXAs confinement layers. contacts dependent polarity chip. then p-side contact back side Au:Ge; then this side Au:Ge contact back side Au:Zn.Two such chips that also very suitable IrDA applications given table
TABLE CHARACTERISTICS DATA IRED CHIPS
TYPICAL CHIP DATA TECHNOLOGY GaAs GaAlAs GaAlAs/GaAs GaAlAs/GaAlAs GaAlAs/GaAlAs
(mW)
(nm)
(nm)
POLARITY
TYPICAL DEVICE TSUS540. TSHA550. TSAL6200 TSHF5410 TSFF5410
TYPICAL DEVICE DATA
(mW)
(mW) (ns) 1.35
VISIBLE, NEAR SILICON PHOTODETECTORS
(adapted from "Sensors, Optical Sensors, Chapt. Verlag, Weinheim 1991")
Absorption Coefficient (cm-1)
10-1
Silicon Photodiodes Diodes) physics silicon detector diodes Absorption radiation caused interaction photons charge carriers inside material. different energy levels allowed band structure determine likelihood interaction and, therefore, absorption characteristics semiconductors. long wavelength cutoff absorption given bandgap energy. slope absorption curve depends physics interaction much weaker silicon than most other semiconducting materials. This results strong wavelength-dependent penetration depth which shown figure (The penetration depth defined that depth where incident radiation absorbed.)
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Penetration Depth
Wavelength (nm)
8595
Fig. Absorption Penetration Depth Optical Radiation Silicon
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Depending wavelength, penetration depth varies from tenths micron (blue) more than (IR). detectors effective, interaction length least twice penetration depth should realized (equivalent 1/e2 absorbed radiation). diode, generated carriers collected electrical field junction. Effects vicinity junction shown figure various types operating modes diode. Incident radiation generates mobile minority carriers electrons p-side, holes n-side. short circuit mode shown figure (top), carriers drift under field built-in potential junction. Other carriers diffuse inside field-free semiconductor along concentration gradient, which results electrical current through applied load, without load, external voltage, open circuit voltage, VOC, contact terminals. Bending energy bands near surface caused surface states. equilibrium established between generation, recombination carriers, current flow through load.
Surface States Without external bias
circuits'). width, space charge function doping concentration applied voltage
(for one-sided abrupt junction), where built-in voltage, dielectric constant vacuum dielectric constant electronic charge. diode's capacitance (which speed limiting) also function space charge width applied voltage. given
Energy
8596
where area diode. externally applied bias will increase space charge width (see figure with result that larger number carriers generated inside this zone which flushed very fast with high efficiency under applied field. From equation (1), evident that space charge width function doping concentration Diodes with so-called structure show according equation wide space charge width where stands intrinsic, doped. This zone also sometimes nominated rather than doped p-zone indicating very doping. equation (2), junction capacitance large space charge region photodiodes. These photodiodes mostly used applications requiring high speed. Figure shows cross section photodiodes diodes. space charge width photodiodes (bottom) with doping level 1011 cm-3 about wide bias comparison with diode with doping 1015 cm-3 with only
Contact Antireflection coating Isolation layer
Reverse bias applied Energy
Space charge
8597
Fig. Generation-Recombination Effects Vicinity Junction Top: Short Circuit Mode, Bottom: Reverse Biased
Contact
8598
Recombination takes place inside bulk material with technology- process-dependent time constants which very small near contacts surfaces device. short wavelengths with very small penetration depths, carrier recombination efficiency limiting process. achieve high efficiencies, many carriers possible should separated electrical field inside space charge region. This very fast process, much faster than typical recombination times (for data, chapter 'Operating modes
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Space charge
8599
Fig. Comparison Diode (Top) Photodiode (Bottom) Document Number: 80086 Rev. 1.0, 26-Aug-08
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PROPERTIES SILICON PHOTODIODES
Characteristics illuminated junction cross section I-V-characteristics photodiode shown figure characteristic illuminated diode identical characteristic standard rectifier diode. relationship between current, voltage, given
with kT/q 1.38 10-23 JK-1, Boltzmann constant 10-19 electronic charge. dark-reverse saturation current, material- technology-dependent quantity. value influenced doping concentrations junction, carrier lifetime, especially temperature. shows strongly exponential temperature dependence doubles every
8600
Fig. I-V-Charachteristics Photodiode under Illumination. Parameter: Incident Radiant Flux
quotient both spectral responsibility
characteristic irradiated photodiode then given
Forward Current (nA) Rev. Current (nA)
8601
dV/dl
case
zero reverse bias find,
Reverse Voltage (mV)
Forw. Volt. (mV)
Dependent load resistance, applied bias, different operating modes distinguished. unbiased diode operates photovoltaic mode. Under short circuit conditions (load short circuit current, flows into load. When increases infinity, output voltage diode rises open circuit voltage, VOC, given
Fig. Measured I-V-Characteristics Photodiode Vicinity Origin
typical dark currents photodiodes dependent size technology range from less than picoamps tens nanoamps room temperature conditions. noise generators, dark current resistance (defined measured voltage forward reverse, peak-to-peak) limiting quantities when detecting very small signals. photodiode exposed optical radiation generates photocurrent exactly proportional incident radiant power
Because this logarithmic behavior, open circuit voltage sometimes used optical light meters photographic applications. open circuit voltage shows strong temperature dependence with negative temperature coefficient. reason this exponential temperature coefficient dark reverse saturation current precise light measurement, temperature control photodiode employed. Precise linear optical power measurements require small voltages load, typically smaller than about corresponding open circuit voltage. less precise measurements, output voltage half open circuit voltage allowed. most important disadvantage operating photovoltaic mode relatively large response time. faster response, necessary implement additional voltage source reverse-biasing photodiode. This mode operation termed photoconductive mode. this mode, lowest detectable power limited shot noise dark current, while photovoltaic mode, thermal (Johnson) noise shunt resistance, Rsh, limiting quantity.
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SPECTRAL RESPONSIVITY
Efficiency photodiodes: spectral responsivity, given number generated charge carriers incident photons energy percent efficiency, Plancks constant, radiation frequency). Each photon will generate charge carrier most. photocurrent then given
Spectral Responsitivity (A/W
Physics Technology
1000 1200
8602
Wavelength (nm)
1.24
fixed efficiency, linear relationship between wavelength spectral responsivity valid. Figure shows that semiconductors absorb radiation similar cut-off filter. wavelengths smaller than cut-off wavelength, incident radiation absorbed. larger wavelengths radiation passes through material without interaction. cut-off wavelength corresponds bandgap material. long energy photon larger than bandgap, carriers generated absorption photons, provided that material thick enough propagate photon-carrier interaction. Bearing mind that energy photons decreases with increasing wavelength, see, that curve spectral responsivity wavelength ideal case (100 efficiency) will have triangular shape (see figure 13). silicon photodetectors, cut-off wavelength near 1100 most applications, necessary detect radiation with wavelengths larger than 1000 Therefore, designers typical chip thickness which results reduced sensitivity wavelengths larger than With typical chip thickness efficiency about 1060 achieved. shorter wavelengths (blue-near sensitivity limited recombination effects near surface semiconductor. reduction efficiency starts near increases wavelength decreases. Standard detectors designed visible near radiation have poor UV/blue sensitivity poor stability. Well designed sensors wavelengths operate with fairly high efficiencies. shorter wavelengths nm), efficiency decreases strongly.
Fig. Spectral Responsivity Function Wavelength Photodetector Diode, Ideal Typical Values
Temperature dependence spectral responsivity efficiency carrier generation absorption loss carriers recombination factors which influence spectral responsivity. absorption coefficient increases with temperature. radiation long wavelength therefore more efficiently absorbed inside bulk results increased response. shorter wavelengths nm), reduced efficiency observed with increasing temperature because increased recombination rates near surface. These effects strongly dependent technological parameters therefore cannot generalized behavior longer wavelengths. Uniformity spectral responsivity Inside technologically defined active area photodiodes, spectral responsivity shows variation sensitivity order Outside defined active area, especially lateral edges chips, local spectral response sensitive applied reverse voltage. Additionally, this effect depends wavelength. Therefore, relation between power related spectral responsivity, (A/W), power density (W/cm2) related spectral responsivity, [A/(W/cm2)] constant. Rather, this relation function wavelength reverse bias Stability spectral responsivity detectors wavelengths between appear stable over very long periods time. literature concerned here, remarks found instabilities detectors blue, near under certain conditions. Thermal cycling reversed degradation effects. Surface effects contamination possible causes technologically well controlled. Angular dependence responsivity angular response photodiodes given optical laws reflection. angular response detector shown figure
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Acm2/W
8603
Angle
Relative Responsitivity
Fig. Responsivity Photodiodes Function Angle Incidence
Semiconductor surfaces covered with quarter wavelength anti-reflection coatings. Encapsulation performed with uncoated glass sapphire windows. bare silicon response altered optical imaging devices such lenses. this way, nearly every arbitrary angular response achieved. Dynamic Properties Photodiodes photodiodes available many different variations. design diodes tailored meet special needs. photodiodes designed maximum efficiency given wavelengths, very leakage currents, high speed. design photodiode nearly always compromise between various aspects specification. Inside absorbing material diode, photons absorbed different regions. example p+n-diode there highly doped layer Radiation shorter wavelengths will effectively absorbed, larger wavelengths only small amount absorbed. vicinity junction, there space charge region, where most photons should generate carriers. electric field accelerates generated carrier this part detector high drift velocity. Carriers which absorbed these regions penetrate into field-free region where motion generated carriers fluctuates slow diffusion process. dynamic response detector composed different processes which transport carriers contacts. dynamic response photodiodes influenced three fundamental effects: Drift carriers electric field Diffusion carriers Capacitance load resistance Carrier drift space charge region occurs rapidly with very small time constants. Typically, transit times electric field order ps/m ps/m electrons holes, respectively. (maximum) saturation velocity, transit time order
ps/m electrons p-material. With drift region, travelling times expected. Response time function distribution generated carriers therefore dependent wavelength. diffusion carriers very slow process. Time constants order some typical pulse response detectors dominated these processes. Obviously, carriers should absorbed large space charge regions with high internal electrical fields. This requires material with adequate doping level. Furthermore, reverse bias rather large voltage useful. Radiation shorter wavelength absorbed smaller penetration depths. wavelengths shorter than decreasing wavelength leads absorption diffused layer. movement carriers this region also diffusion limited. Because small carrier lifetimes, time constants large homogeneous substrate material. Finally, capacitive loading output combination with load resistance limits frequency response.
PROPERTIES SILICON PHOTOTRANSISTORS
phototransistor equivalent photodiode conjunction with bipolar transistor amplifier (figure 15). Typically, current amplification, between 1000 depending type application. active area phototransistor usually about mm2. data spectral responsivity equivalent those photodiodes, must multiplied factor current amplification,
Antireflection coating Metallization Emitter Base Collector Isolation
8605
Backside contact
Fig. Phototransistor, Cross Section Equivalent Circuit
switching times phototransistors dependent current amplification load resistance between resulting cut-off frequencies hundred kHz.
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transit times, given
Physics Technology
(10)
Transit frequency Load resistance, Base-collector capacitance, Amplification
Phototransistors most frequently applied transmissive reflective optical sensors.
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Measurement Techniques
INTRODUCTION
characteristics optoelectronics devices given datasheets verified either production tests followed statistic evaluation sample tests typical specimens. These tests divided into following categories: Dark measurements Light measurements Measurements switching frequency capacitance characteristics, cut-off
8206
max.) constant
Angular distribution measurements Spectral distribution measurements Thermal measurements Dark light measurements limits measurements. other values typical. basic circuits used these measurements shown following sections. circuits modified slightly accommodate special measurement requirements. Most test circuits simplified source measure unit (SMU), which allows either source voltage measure current source current measure voltage.
Fig.
DARK LIGHT MEASUREMENTS
EMITTER DEVICES Diodes (GaAs) Forward voltage, measured either curve tracer statically using circuit shown figure specified forward current (from constant current source) passed through device voltage developed across measured high-impedance voltmeter.
constant
most devices, specified reverse current. this case either high impedance voltmeter used, current consumption calculated added specified current. second measurement step will then give correct readings. case GaAs diodes, total radiant output power, usually measured. This done with calibrated large-area photovoltaic cell fitted conical reflector with bore which accepts test item figure alternative test uses silicon photodiode attached integrating sphere. constant pulsating forward current specified magnitude passed through diode. advantage pulse-current measurements room temperature that results reproduced exactly.
Photo Voltaic Cell, Calibrated
8155
948205
Reflector
Fig.
Fig.
measure reverse voltage, reverse current from constant current source impressed through diode (figure voltage developed across measured voltmeter high input impedance
reasons measurement economy, only measurements (figure made, then energizing time should kept short (below uniform duration, minimize fall-off light output internal heating.
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Measurement Techniques
DETECTOR DEVICES Photovoltaic cells, photodiodes
constant
8207
Dark measurements reverse voltage characteristic, measured either curve tracer statically using circuit shown figure high-impedance voltmeter, which draws only insignificant fraction device's reverse current, must used.
constant
8209
Fig.
ensure that relationship between irradiance photocurrent linear, photodiode should operate near short-circuit configuration. This achieved using resistance load such value that voltage dropped across very much lower than open circuit voltage produced under identical illumination conditions (Rmeas Ri). voltage across load should measured with sensitive DVM. knowledge radiant intensity, produced emitter enables customers assess range light barriers. measurement procedure this more less same used measuring radiant power. only difference that this case photodiode used without reflector mounted specified distance from, optical axis diode (figure This way, only radiant power narrow axial beam considered. radiant power within solid angle 0.01 steradian (sr) measured distance Radiant intensity then obtained using this measured value calculating radiant intensity solid angle
Photo Voltaic Cell with Filter (Calibrated),
Fig.
Dark reverse current measurements, Iro, must carried complete darkness reverse currents silicon photodiodes range nanoamperes only, illumination quite sufficient falsify test result. highly sensitive used, then current sampling resistor such value that voltage dropped across small comparison with supply voltage must connected series with test item (figure Under these conditions, reverse voltage variations test samples ignored. Shunt resistance (dark resistance) determined applying very slight voltage photodiode then measuring dark current. case less, forward reverse polarity will result similar readings.
0.01
8210
Position Emitting Area
8156
Fig.
Fig.
Light measurements same circuit used dark measurement used carry light reverse current, Ira, measurements photodiodes. only difference diode irradiated current sampling resistor lower value must used (figure because higher currents involved.
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mW/cm2
8211
Fig.
open circuit voltage, short circuit current, photovoltaic cells photodiodes measured means test circuit shown figure value load resistor used measurement should chosen that voltage dropped across comparison with open circuit voltage produced under conditions identical irradiation.
measurements carried with different lamps (but same color temperature calibration) result readings that differ simplest overcome this problem calibrate (measure light current) some items photodetector type with standard lamp (OSRAM 41/G) then these devices adjustment lamp used field measurements. diode used radiation source (instead Tungsten incandescent lamp), measure detector devices being used mainly transmission systems together with emitters (e.g., remote control, headphone). Operation possible both with pulsed current. adjustment irradiance, similar above mentioned adjustment illuminance, achieve high stability similar filament lamps, consideration should given following points: emitter should connected good heat sink provide sufficient temperature stability. pulse-current levels well pulse duration have great influence self-heating diodes should chosen carefully. radiant intensity, device permanently controlled calibrated detector. Phototransistors collector emitter voltage, VCEO, measured either transistor curve tracer statically using circuit shown figure Normal bench illumination does change measured result.
mW/cm2
8212
VCEO
Fig.
constant
light source used light measurements calibrated incandescent tungsten lamp with filters. filament current adjusted color temperature 2856 (standard illuminant 5033 sheet specified illumination, (usually 1000 produced adjusting distance, between lamp detector optical bench. measured )-corrected luxmeter, luminous intensity, lamp known, calculated using formula: Iv/a2. should noted that this inverse square only strictly accurate point light sources, that sources where dimensions source (the filament) small comparison with distance between source detector. Since measure visible light only, near-infrared radiation (800 1100 where silicon detectors have their peak sensitivity taken into account. Unfortunately, near-infrared emission filament lamps various construction varies widely. result, light current
VCEO
8213
Fig.
contrast, however, collector dark current, ICEO ICO, must measured complete darkness (figure 11). Even ordinary daylight illumination wire fed-through glass seals would falsify measurement result.
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constant
mW/cm2 VCEsat
8214
8216
Fig.
Fig.
same circuit used collector light current, Ica, measurements (figure 12). optical axis device aligned incandescent tungsten lamp with filters, producing illuminance 1000 with color temperature 2856 Alternatively irradiance GaAs diode used (refer photovoltaic cells photodiodes section). Note that lower sampling resistor used, keeping with higher current involved.
SWITCHING CHARACTERISTICS
Definition Each electronic device generates certain delay between input output signals well certain amount amplitude distortion. simplified circuit (figure shows input output signals optoelectronic devices displayed dual-trace oscilloscope.
Channel
mW/cm2
GaAs-Diode Channel Channel Channel
8219
Fig.
8215
switching characteristics determined comparing timing output current waveform with input current waveform (figure 15).
Fig.
measure collector emitter saturation voltage, VCEsat, device illuminated constant collector current passed through. magnitude this current adjusted below level minimum light current, min, same illuminance (figure 13). saturation voltage phototransistor (approximately then measured high impedance voltmeter.
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TECHNICAL DESCRIPTION ASSEMBLY
Emitter Emitters manufactured using most modern liquid phase epitaxy (LPE) process. using this technology, number undesirable flaws crystal reduced. This results higher quantum efficiency thus higher radiation power. Distortions crystal prevented using mesa technology which leads lower degradation. further advantage mesa technology that each individual chip tested optically electrically, even wafer.
Pulse duration Delay time Rise time Turn-on time
DETECTOR
Vishay Semiconductor detectors have been developed match perfectly emitters. They have capacitance, high photosensitivity, extremely saturation voltage. Silicon nitride passivation protects surface against possible impurities. Assembly Components fitted onto lead frames fully automatic equipment using conductive epoxy adhesive. Contacts established automatically with digital pattern recognition using well-proven thermosonic techniques. component measured according parameter limits given datasheet. Applications Silicon photodetectors used manifold applications, such sensors radiation from near over visible near infrared. There numerous applications measurement light, such dosimetry photometry, radiometry. well known application shutter control cameras. Another large application area detector diodes, especially phototransistors, position sensing. Examples differential diodes, optical sensors, reflex sensors. Other types silicon detectors built-in parts optocouplers. largest application areas remote control sets other home entertainment appliances. Different applications require specialized detectors also special circuits enable optimized functioning.
Storage time Fall time Turn-off time
11698
Fig.
These time parameters also include delay existing luminescence diode between forward current (IF) radiant power Notes Concerning Test Set-up Circuits used testing emitting, emitting sensitive optically coupled isolator devices basically same (figure 14). only difference which test device connected circuit. assumed that rise fall times associated with signal source (pulse generator) dual trace oscilloscope insignificant, that switching characteristics radiant sensitive device used set-up considerably shorter than those test item. switching characteristics emitters, example 1000 ns), measured with Photodiode detector ns). Photo- darlington transistors photo- solar cells are, rule, measured fast diodes emitters. light-emitting diodes used light sources only devices which cannot measured with diodes because their spectral sensitivity (e.g. BPW21R). These diodes emit only 1/10 radiant power diodes consequently generate only very signal levels. Switching Characteristic Improvements Phototransistors Darlington Phototransistors
ordinary transistor, switching times reduced drive signal level, hence collector current, increased. Another time reduction (especially fall time achieved suitable base resistor, assuming there external base connection, although this only done expense sensitivity.
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Equivalent circuit Photodetector diodes described electrical equivalent circuit shown figure
Measurement Techniques
strong logarithmic dependence open circuit voltage input signal used.
8607 8606
Fig.
Fig. Photodiode Photovoltaic Mode Operating with Voltage Amplifier
with
described chapter "I-V Characteristics illuminated junction", incident radiation generates photocurrent loaded diode characteristic load resistor, Other parts equivalent circuit (parallel capacitance, combined from junction, stray capacitances, serial resistance, shunt resistance, Rsh, representing additional leakage) neglected most standard applications, expressed equations (see "Physics Technology"). However, applications with high frequencies extreme irradiation levels, these parts must regarded limiting elements.
Searching right detector diode type
photodiode based rather highly doped n-silicon, while BPW34 photodiode based very lightly doped n-silicon. Both diodes have same active area spectral response function wavelength very similar. These diodes differ their junction capacitance shunt resistance. Both influence performance application. Detecting very small signals domain photodiodes with their very small dark currents dark/shunt resistances. With specialized detector technology, these parameters very well controlled Vishay photodetectors. very small leakage currents photodiodes offset higher capacitances smaller bandwidths comparison photodiodes. Photodiodes often operated photovoltaic mode, especially light meters. This depicted figure where
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should noted that extremely high shunt/dark resistance (more than combined with high-impedance operational amplifier input junction capacitance about result slow switch-off time constants some seconds. Some instruments therefore have reset button shortening diode before starting measurement. photovoltaic mode operation precise measurements should limited range ambient temperatures, temperature control diode (e.g., using Peltier cooler) should applied. high temperatures, dark current increased (see figure leading non-logarithmic temperature dependent output characteristic (see figure 19). curves shown figure represent typical behavior these diodes. Guaranteed leakage (dark reverse current) specified with standard types. This value from that which typically measured. Tighter customer specifications available request. curve shown figure show open circuit voltage function irradiance with dark reverse current, parameter first approximation increasing have same effect). parameter shown covers possible spread dark current. combination with figure project extreme dependence open circuit voltage high temperatures (figure 20).
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Operating modes circuits
Reverse Bias Voltage BPW24R
BPW20RF
10-1
8608
Temperature (°C)
Fig. Reverse Dark Current Temperature
advantages disadvantages operating photodiode open circuit mode have been discussed. operation short circuit mode (see figure photoconductive mode (see figure 22), current-to-voltage converters typically used. comparison with photovoltaic mode, temperature dependence output signal much lower. Generally, temperature coefficient light reverse current positive irradiation with wavelengths rising with increasing wavelength. wavelengths negative temperature coefficient found, likewise with increasing absolute value shorter wavelengths. Between these wavelength boundaries output almost independent temperature. using this mode operation, reverse biased unbiased (short circuit conditions), output voltage, will directly proportional incident radiation, (see equation figure 21).
Current (nA) Open Circuit Voltage (mV)
1000
8611
0.01
8609
Irradiance
Fig. Open Circuit Voltage Irradiance, Parameter: Dark Reverse Current, BPW20RF
Fig. Transimpedance Amplifier, Current Voltage Converter, Short Circuit Mode
Open Circuit Voltage (mV)
8610
8612
Temperature (°C)
Fig. Open Circuit Voltage Temperature, BPW46
Fig. Transimpedance Amplifier, Current Voltage Converter, Reverse Biased Photodiode
circuit figure minimizes effect reverse dark current while circuit figure improves speed detector diode wider space charge region with decreased junction capacitance field increased velocity charge carrier transport.
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Rise Time Fall Time
8613
948615
Wavelength (nm)
Fig. RC-Loaded Photodiode with Voltage Amplifier
Fig. Switching Times Wavelength Photodiode BPW20RF
Figure shows photocurrent flowing into load, where represents junction stray capacity while real complex load, such resonant circuit operating frequency.
drastic increase rise fall times observed wavelengths Differences between unbiased biased operation result from widening space charge region. However, photodiodes (BPW34/TEMD5000 family) similar results with shifted time scales found. example such behavior, this case frequency domain, presented figure wavelength figure
8614
Fig. AC-Coupled Amplifier Circuit
Reverse Bias
8616
circuit figure equivalent figure with change coupling. this case, influence background illumination separated from modulated signal. relation between input signal (irradiation, output voltage given equation figure Frequency response limitations switching times photodiodes determined carrier lifetime. absorption properties silicon, especially photodiodes, most incident radiation longer wavelengths absorbed outside space charge region. Therefore, strong wavelength dependence switching times observed (figure 25).
Bandwidth (Hz)
Fig. BPW34, TEMD5010X01, Bandwidth Reverse Bias Voltage, Parameter: Load Resistance,
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Document Number: 80085 Rev. 1.3, 27-Aug-08
Measurement Techniques
Measurement Techniques
Vishay Semiconductors
8617
Bandwidth (Hz)
cut-off frequencies greater than MHz, depending supply voltage available biasing detector diode, photodiodes also used. However, this frequency range, especially when operating with bias voltages, thin epitaxially grown intrinsic layers incorporated into photodiodes. result, these diodes (e.g., Vishay's TESP5700) operate with bias voltages with cut-off frequencies wavelength With application-specific optimized designs, photodiodes with cut-off frequencies only bias voltage with only insignificant loss responsivity generated. main applications these photodiodes found optical local area networks operating first optical window wavelengths
Reverse Bias
WHICH TYPE WHICH APPLICATION?
Fig. BPW41, TEMD5110X01, Bandwidth Reverse Bias Voltage, Parameter: Load Resistance
Below about only slight wavelength dependence recognized, while steep change cut-off frequency takes place from (different time scales figure figure 27). Additionally, influence load resistances reverse bias voltages taken from these diagrams.
table selected diode types assigned different applications. more precise selection according chip sizes packages, refer tables introductory pages this data book.
TABLE PHOTODIODE REFERENCE TABLE
DETECTOR APPLICATION Photometry, light meter Radiometry Light barriers Remote control, filter included, Data Transmission filter included, Data Transmission, MHz, filter Densitometry Smoke detector TEMD5010X01, BPW34, BPW24R, BPV10NF, BPW24R BPV20F, BPV23F, BPW41N, S186P, TEMD5100X01 BPV23NF, BPW82, BPW83, BPV10NF, TEMD1020, TEMD5110X01 BPW34, BPW46, BPV10, TEMD5010X01 BPW34, BPV10, TEMD5010X01 BPV22NF, BPW34, TEMD5010X01 BPW20RF, BPW21R TESP5700 PHOTODIODE PHOTODIODE BPW21R BPW20RF PHOTODIODE
PHOTOTRANSISTOR CIRCUITS
phototransistor typically operates circuit shown figure Resistor omitted most applications. some phototransistors, base terminal connected. used suppress background radiation setting threshold level (see equation
8618
0.6/RB)
dependence rise fall times load resistance collector-base capacitance, chapter "Properties Silicon Phototransistors".
Fig. Phototransistor with Load Resistor Optional Base Resistor
Document Number: 80085 Rev. 1.3, 27-Aug-08
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Component Construction
Vishay Semiconductors
Component Construction
Photodetector infrared emitter components available plastic metal packages. Plastic devices mostly include lens improve radiant sensitivity radiant intensity. Detector chips mounted flat leadframe surfaces while leadframes emitters have silver plated reflector performing higher radiant intensity. Devices metal packages hermetically sealed, released extended operating temperature range have small optical mechanical tolerances.
IRED chip AU-bond wire Black plastic package daylight blocking filter Reflector
diode chip Collimating lens
Plastic package
Lead frame
Anode
Cathode
8165
Cathode
Anode
diode chip Glass window
8314
Chip
Bond wire Reflector cone filled with epoxy Metal package
White plastic case Anode Leadframe Cathode Polarity identification
11621-1 8315
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Document Number: 80081 Rev. 1.3, 06-Jun-08
Packaging Order Information
Vishay Semiconductors
Packaging Order Information
PACKAGING SURVEY TABLE PACKAGING OPTIONS DETECTOR EMITTER DEVICES
PACKAGE FORM Metal PACKAGING OPTION SERIES BPW./TS. TEKS5400. Side view lens TEKS5400S TEKT5400S TSKS5400S TSKS542.X01 TEM./TSM./ VEM./VSM. BP104 BPW34 BP104S BPW34S BP./TE./TS. BULK TAPE
This contains MOISTURE -SENSITIVE DEVICES
RECOMMENDED METHOD STORAGE
storage recommended soon been opened prevent moisture absorption. following conditions should observed boxes available: Storage temperature Storage humidity max. After storage longer than specified floor life (see table moisture content will high reflow soldering. case moisture absorption, devices will recover their former condition drying using conditions according individual moisture sensitivity level (MSL) specified sticker affixed bags (e.g. figure 2a).
BLISTER TAPE
TUBE
view mold Other leaded packages
CAUTION
Shelf life sealed months <40°C relative humidity (RH) After this opened devices that will subjected infrared reflow, vapor-phase reflow, equivalent processing (peak package body temp. 260°C) must Mounted within hours factory condition 30°C/60%RH Stored <10% Devices require baking before mounting Humidity Indicator Card >10% when read 23°C met. baking required, devices baked for: hours 40°C 5°C/-0°C <5%RH (dry air/nitrogen) hours 60±5 Cand <5%RH device containers hours 100±5°C suitable reels tubes Seal Date: blank, code label) Note: LEVEL defined JEDEC Standard JESD22-A113
19786
MOISTURE PROOF PACKAGING
reel packed moisture proof aluminum protect devices from absorbing moisture during transportation storage.
Aluminum
Moisture level sticker code sticker label
Fig. Example Sticker
TABLE MOISTURE SENSITIVITY LEVEL, FLOOR LIFE FLOOR CONDITIONS
Reel
18298
FLOOR LIFE limit year 24h/48
CONDITIONS °C/90
°C/60
Fig. Moisture Proof Packaging
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
PRECAUTION
Proper storage handling procedures should followed prevent damage devices, especially when they removed from antistatic shielding bag.
Packaging Order Information
TAPING
Vishay emitters detectors packed antistatic blister tapes accordance with (CO) 564) automatic component insertion. blister tapes plastic strips with impressed component cavities, which covered glued tape. Missing Devices maximum total number components reel missing, excluding missing components beginning reel. maximum three consecutive components missing. This followed consecutive components (minimum).
CODE LABELS
Vishay Semiconductor standard code labels printed final package. Labels containing Vishay Semiconductor specific data affixed each package unit.
De-reeling direction
8158
21379
empty compartments
min. empty compartments
Fig. code design information
Tape leader
Carrier leader
Carrier trailer
Fig. Beginning Reel
PDF417 bardoce including char Plant code according TQD9021 Lot1 Lot2 reflects numbers. Lot2 combination (PTC), 0745 (YYWW), (production MO=1, TU=2), (Shift A,B,C) production equipment Batch contains datecode 200745 (YYYYWW), origin (PH=Philippines), (PTC) Unique label serial number: production location (ISO), 01=label station 00001158 (serial number) Check digit: counting number starting give e.g. manufactured reel serial number (track trace information)
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Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
TAPING PLCC-2 PACKAGE
Vishay Semiconductors
TAPING STANDARDS GS08 GS18
GS08: 1500 pcs/reel GS18: 8000 pcs/reel tape leader least followed carrier tape leader with least empty compartments (figure tape leader include carrier tape long cover tape connected carrier tape. last component followed carrier tape trailer with least empty compartments, sealed with cover tape.
Adhesive tape
Blister tape
120°
10.0
Component cavity
8670
Identification Label: Vishay type group tape code production code quantity
Fig. Blister Tape
13.00 12.75 63.5 60.5
5.75 5.25
1.85 1.65
14.4 max.
8665
Fig. Reel Dimensions: GS08
0.25
2.05 1.95
8668
120°
10.4
Fig. Tape Dimensions PLCC-2
Identification Label: Vishay type group tape code production code quantity
13.00 12.75 62.5 60.0
14.4 max.
18857
Fig. Reel Dimensions: GS18
COVER TAPE REMOVAL FORCE
removal force vary strength between removal speed mm/s. order prevent components from popping blisters, cover tape must pulled angle 180° relative feed direction.
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
Packaging Order Information
TAPING WITH DOME PACKAGE
Dimensions millimeters
16129
Fig. Blister Tape TEMD5000 TEMD5100
20874
Fig. Reel
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Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
Vishay Semiconductors
20537
Fig. Blister Tape
±0.5
±0.2
Unreel direction
60.2
Tape position coming from reel
13.2
±1.5
Label posted here
Leader trailer tape: Parts mounted Empty leader (400 min.)
Direction pulling Empty trailer (200 min.)
Drawing-No.: 9.800-5080.01-4 Issue: 11.06.08
18033
Fig. Reel TEMx1000 Series TSMx1000 Series Quantity Reel: 1000
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
Packaging Order Information
3.05
1.55 0.05
1.75 0.05 0.05
tape
Anode Push through hole
Feed direction
Quantity reel: 1000 5000
18030
Fig. Blister Tape TSMF1000, TSML1000, TEMD1000
3.05
1.55 0.05
1.75 0.05
Feed direction
0.05
tape
Anode Push through hole Quantity reel: 1000 5000
18031
Fig. Blister Tape TSMF1020, TSML1020, TEMD1020
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Packaging Order Information
Packaging Order Information
Vishay Semiconductors
3.05
1.55 0.05
1.75 0.05
Feed direction
0.05
18032
tape
Anode Push through hole Quantity reel: 1000 5000
Fig. Blister Tape TSMF1030, TSML1030, TEMD1030
3.05
1.55 0.05
1.75 0.05
0.05
Feed direction tape Collector Push through hole
Quantity reel: 1000 5000
18089
Fig. Blister Tape TEMT1000
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
Packaging Order Information
3.05
1.55 0.05
1.75 0.05
Feed direction
0.05
tape
Collector Push through hole Quantity reel: 1000 5000
18090
Fig. Blister Tape TEMT1020 TEMT1520
3.05
1.55 0.05
0.05
Feed direction tape Collector Push through hole
1.75
0.05
18091
Quantity reel: 1000 5000
Fig. Blister Tape TEMT1030
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Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
Vishay Semiconductors
20874
Fig. Reel TEMx6000 Series Quantity Reel: 3000
20877
Fig. Blister Tape TEMD6010FX01 Document Number: 80090 Rev. 1.3, 27-Aug-08 technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com www.vishay.com
Packaging Order Information
Vishay Semiconductors
Packaging Order Information
Fig. Blister Tape TEMT6000X01
20875
Fig. Reel TEMx6200X01 Series Quantity reel: 3000 www.vishay.com technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
Vishay Semiconductors
Quantity reel: 3000
20690
Fig. Blister Tape TEMT6200FX01
TAPING DEVICES
taping specification based publication 286, taking into account industrial requirements automatic insertion. Absolute maximum ratings, mechanical dimensions, optical electrical characteristics taped devices identical basic catalog types found specifications untaped devices. Note that lead wires taped components shorted bent accordance standard.
CODE TAPED DEVICES
Tape varieties
Spacing lead frame 2.54 5.08
Cathode/collector leaves reel first Anode/emitter leaves reel first
Cathode/collector Anode/emitter
PACKAGING
tapes components available reels Ammopack. Each reel each marked with label containing following information: Vishay Type Group Tape code (see figure Productions code Quantity
Fig. Taping Code
18801
only fold packing both polarities
Number Packed Components mm): 2000 mm): 1000
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
MISSING COMPONENTS
consecutive components missing followed least components. maximum components reel quantity missing. least empty positions present start tape enable tape insertion. Tensile strength tape: Pulling force plane tape, right angles reel: Note: Shipment fan-fold packages standard radial taped devices. Shipment reel packing only possible customer guarantees removal empty reels. According what stated German packaging decree (Verpackungsverordnung) able accept return reels.
Packaging Order Information
ORDERING CODE
Type designations extended code taping standard. Example: TSAL6200-AS12 (reel packing) TSAL6200-ASZ (fan-fold packing) BPW85-AS12 (reel packing)
TABLE TAPING SURVEY LEADED COMPONENTS
CODE TAPING STANDARD AS12 AS21 CS12 CS21 ES12 ES21 MS12 MS21 29.0 27.0 27.0 Standard 25.5 25.5 24.0 24.0 24.0 Standard 22.0 22.0 17.3 17.3 16.0 Standard HIGH TAPING (TOLERANCES SIDEVIEW'S Reel, cathode/collector leaves first Reel, anode/emitter leaves first Ammopack Reel, cathode/collector leaves first Reel, anode/emitter leaves first Ammopack Reel, cathode/collector leaves first Reel, anode/emitter leaves first Ammopack Ammopack distance lead lead Reel, cathode/collector leaves first Reel, anode/emitter leaves first Ammopack Ammopack distance lead lead Ammopack Ammopack distance lead lead PREFERENCES REMARKS
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Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
REEL DIMENSIONS millimeters AMMOPACK
tape folded concertina arrangement laid cardboard box. components required have cathode collector leave first (figure 27), then open side marked with symbol. anode emitter sould leave first, then open side marked with symbol.
Vishay Semiconductors
max.
Tape feed direction code Diodes: cathode before anode Transistors: collector before emitter
Identification label: Vishay/type/group/tape code/production code/quantity
948641
Fig. Dimensions Reel
Label
Tape feed direction code Diodes: anode before cathode Transistors: emitter before collector
Diodes: anode before cathode Phototransistors: emitter before collector Code Adhesive tape Identification label Reel Diodes: cathode before anode Phototransistors: collector before emitter Code Paper
8667
Tape 8671
Fig. Tape Feed Direction
Fig. Components Tape Reel
TABLE INNER DIMENSIONS AMMOPACK
COMPONENTS AS-taping other than AS-taping side view lens side view lens
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Packaging Order Information
Vishay Semiconductors
TAPING PACKAGES
Polarity options:
Packaging Order Information
TAPING PACKAGES
Polarity options:
TABLE POSITION COMPONENTS TAPE
OPTION 17.3 25.5 22.0 PREFERENCE recommended recommended
TABLE POSITION COMPONENTS TAPE
OPTION 17.3 25.5 22.0 24.0 PREFERENCE recommended recommended
Quantity per:
8171
Reel (Mat. 1764) 2000
Quantity per:
8172
Reel (Mat. 1764) 1000
Fig. Taping Devices
Fig. Taping Devices
Bend leads: Lead standard Straight leads: Lead standard
Option Ammopack Quantity per: (Mat. 1763) 2000
18886
Fig. Taping Side View Lens Packages
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Document Number: 80090 Rev. 1.3, 27-Aug-08
Packaging Order Information
Packaging Order Information
Vishay Semiconductors
Option Quantity per: Reel (Mat. 1764) 1000
18887
25.5
Fig. Taping Side View Photodiodes
TUBE PACKAGING VIEW PHOTODIODES BP104S BPW34S
Dimensions millimeters
10.7
Quantity tube: Quantity box: 1800
214.5
Stopper
18800
Fig. Drawing Proportions Scaled
Document Number: 80090 Rev. 1.3, 27-Aug-08
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Assembly Instructions
Vishay Semiconductors
Assembly Instructions
GENERAL
Optoelectronic semiconductor devices mounted position. Connection wires bent provided bend less than from bottom case. During bending, forces must transmitted from pins case (e.g., spreading pins). device mounted near heat generating components, resultant increase ambient temperature should taken into account. Infrared soldering With infrared (IR) reflow soldering heating contact-free energy heating assembly derived from direct infrared radiation from convection (Refer CECC00802). heating rate furnace depends absorption coefficients material surfaces ratio component's mass irradiated surface. temperature components furnace, with mixture radiation convection, cannot determined advance. Temperature measurement performed measuring temperature certain component while being transported through furnace. temperatures small components, soldered together with larger ones, rise following parameters influence internal temperature component: Time power Mass component Size component Size printed circuit board Absorption coefficient surfaces Packaging density Wavelength spectrum radiation source Ratio radiated convected energy Temperature-time profiles entire process above parameters given figures
SOLDERING INSTRUCTIONS
Protection against overheating essential when device being soldered. recommended, therefore, that connection wires left place long possible. maximum permissible device junction temperature should exceeded little time possible, longer than specified solder profiles, during soldering process. case plastic encapsulated devices, maximum permissible soldering temperature governed maximum permissible heat that applied encapsulants rather than maximum permissible junction temperature. Maximum soldering iron solder bath) temperatures given table During soldering, forces must transmitted from pins case (e.g., spreading pins).
SOLDERING METHODS
There several methods solder devices onto substrate. Some them listed following sections. Vapor Phase Soldering Soldering saturated vapor also known condensation soldering. This soldering process used batch system (dual vapor system) continuous single vapor system. Both systems also include preheating assemblies prevent high-temperature shock other undesired effects.
TABLE MAXIMUM SOLDERING TEMPERATURES
IRON SOLDERING DISTANCE SOLDERING POSITION FROM LOWER EDGE CASE SOLDERING TEMPERATURE TEMPERATURE TIME PROFILES WAVE SOLDERING DISTANCE SOLDERING POSITION FROM LOWER EDGE CASE
IRON TEMPERATURE
MAXIMUM ALLOWABLE SOLDERING TIME
MAXIMUM ALLOWABLE SOLDERING TIME
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Document Number: 80080 Rev. 1.3, 28-Aug-08
Assembly Instructions
Assembly Instructions
Vishay Semiconductors
Wave soldering wave soldering, more continuously replenished waves molten solder generated, while substrates soldered moved direction across wave's crest. Temperature-time profiles entire process given figure Iron soldering This process cannot carried controlled way. should considered applications where reliability important. There classification this process. Laser soldering This excess heating soldering method. energy absorbed heat device much higher temperature than desired. There classification this process moment. Resistance soldering This soldering method which uses temperature controlled tools (thermodes) making solder joints. There classification this process moment.
TEMPERATURE-TIME PROFILES
max.
Temperature (°C)
max. max. max. ramp °C/s max. ramp down °C/s max.
19841
Time
Fig. Lead (Pb)-free (Sn) Infrared Reflow Solder Profile acc. J-STD020D Surface-Mount Components
Temperature (°C)
WARNING
Surface-mount devices sensitive moisture release they subjected infrared reflow similar soldering process (e.g. wave soldering). After opening bag, they must stored ambient relative humidity (RH) mounted within floor life specified sticker under factory conditions Tamb °C/RH Devices require baking before mounting humidity indicator card baking required, devices baked
°C/s
°C/s
17172
Time
Fig. Infrared Reflow SnPb Solder Profile Surface-Mount Components like TEMx1xxx TSMx1xxx
first wave wave
948626
Lead temperature second wave
Temperature (°C)
full line: typical dotted line: process limits
forced cooling
Time
Fig. Double Wave Solder Profile Leaded Components
Document Number: 80080 Rev. 1.3, 28-Aug-08
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Assembly Instructions
Vishay Semiconductors
HEAT REMOVAL
maintain thermal equilibrium, heat generated semiconductor junction(s) must removed keep junction temperature below specified maximum. case low-power devices, natural heat conductive path between case surrounding usually adequate this purpose. heat generated junction conveyed case header conduction rather than convection. measure effectiveness heat conduction inner thermal resistance junction-to-case thermal resistance, RthJC, which governed device construction. heat transfer from case surrounding involves radiation convection conduction, effectiveness transfer being expressed terms RthCA value, i.e., external case ambient thermal resistance. total junction-to-ambient thermal resistance consequently: RthJA RthJC RthCA total maximum power dissipation, Ptotmax. semiconductor device expressed follows:
From underneath
Assembly Instructions
Lead Length Different Assembly
8162
0.14 isolated
Fig. Case Wire Contacts (Curve Figure
Ptotmax
where: Tjmax. Tamb RthJC RthJA
jmax amb=
RthJA
RthJC RthCA
2.54
maximum allowable junction temperature highest ambient temperature likely reached under most unfavorable conditions junction-to-case thermal resistance junction-to-ambient thermal resistance, specified components. following diagram shows different installation conditions effect thermal resistance case-to-ambient thermal resistance, RthCA, depends cooling conditions. heat dissipator sink used, RthCA depends thermal contact between case heat sink, upon heat propagation conditions sink, upon rate which heat transferred surrounding
Side view
8163
RthCA
Fig. Case Assembly Board, Heatsink (Curve Figure
From underneath
RthJA
2.54
Cathode Side view
8161
Length (mm)
8164
Fig. Junction-to-Ambient Thermal Resistance
Fig. Case Assembly Board, with Heatsink (Curve Figure Document Number: 80080 Rev. 1.3, 28-Aug-08
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Quality Information
Vishay Semiconductors
Quality Information
Corporate Quality Policy goal exceed quality expectations customers. This commitment starts with management extends through entire organization. achieved through innovation, technical excellence continuous improvement.
18348
Fig. Vishay Quality Policy
Document Number: 80087 Rev. 1.3, 05-Sep-08
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Quality Information
Vishay Semiconductors
VISHAY INTERTECHNOLOGY, INC.
ENVIRONMENTAL, HEALTH SAFETY POLICY VISHAY INTERTECHNOLOGY, INC. committed conducting worldwide operations socially responsible ethical manner protect environment, ensure safety health employees, conduct their daily activities environmentally responsible manner. Protection Environment: Conduct business operation manner that protects environmental quality communities which facilities located. Reduce risks involved with storage hazardous materials. company also committed continual improvement environmental performance. Compliance with Environmental, Health Safety Laws Regulations: Comply with relevant environmental, health safety laws regulations every location. Maintain system that provides timely updates regulatory change. Cooperate fully with governmental agencies meeting applicable requirements. Energy, Resource Conservation Pollution Control: Strive minimize energy material consumption design products processes, operation facilities. Promote recycling materials, including hazardous wastes, whenever possible. Minimize generation hazardous non-hazardous wastes facilities prevent eliminate pollution. Manage dispose wastes safely responsibly.
Quality Information
World Class Excellence
2010
Business Excellence Zero Defect Strategy Integrated Management system 2000 Sigma Strategy ISO/TS 16949 14000 9000/VDA EFQM 9000 Advanced Quality Tools Cost Quality Empowered Improvement Team
Fig. Vishay Quality Road
1995
1990
17275
QUALITY SYSTEM QUALITY PROGRAM
heart quality process Vishay worldwide quality program. This program, which been place since early 90's, specifically designed meet rapidly increasing customer quality demands future. Vishay Corporate Quality implements Quality Policy translates requirements throughout worldwide organization. Vishay Quality defined roadmap with specific targets along way. major target achieve world-class excellence throughout Vishay worldwide.
VISHAY CORPORATE QUALITY
Vishay Corporate Quality defines implements Vishay quality policy corporate level. acts harmonize quality systems constituent divisions implement Total Quality Management throughout company worldwide. Vishay Zero Defect Program Exceeding quality expectations customers Commitment from management through entire organization Newest most effective procedures tools design, manufacturing testing management procedures (e.g. SPC, TQM) Continuous decreasing numbers failure rate Detailed failure analysis using methodology Continuous improvement quality performance parts technology
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Quality Information
Quality Information
Vishay Semiconductors
QUALITY GOALS METHODS
goals straightforward: Customer satisfaction through continuous improvement towards zero defects every area operation. committed meet customers' requirements terms quality service. order achieve this, build excellence into products from concept delivery beyond. Design-in Quality Quality must designed into products. Vishay uses optimized design rules based statistical information. This refined using electrical, thermal, mechanical simulation together with techniques such FMEA, DOE. Built-in Quality Quality built into Vishay products using qualified materials, suppliers, processes. Fundamental this techniques both Vishay suppliers. these techniques, well tracking critical processes, reduces variability, optimizing process with respect specification. target defect prevention continuous improvement. Qualification products qualified before release submitting them series mechanical, electrical, environmental tests. same procedure used changed processes packages. Monitoring selection same similar tests used qualification also used monitor short- long-term reliability product. (Statistical Process Control) essential part Vishay process control. been established many years used tool continuous improvement processes measuring, controlling, reducing variability. Vishay Quality System Vishay's facilities worldwide approved 9000. addition, depending their activities, some Vishay companies approved recognized international industry standards such ISO/TS 16949. Each subsidiary goal fulfill particular requirements customers. Opto Divisions Vishay Semiconductor GmbH certified according ISO/TS 16949.
procedures used based upon these standards laid down approved controlled Quality Manual.
BUSINESS EXCELLENCE
Total Quality Management management system combining resources employees, customers, suppliers order achieve total customer satisfaction. fundamental elements this system are: Management commitment EFQM assessment methodology Employee Involvement Teams (EITs) Supplier development partnership Quality tools Training Quality system sigma Automotive excellence program (AEP) Zero defect Vishay employees from senior management downwards trained understanding TQM. Every employee plays part continuous improvement process which fundamental corporate commitment exceed customers' expectations areas including design, technology, manufacturing, human resources, marketing, finance. Everyone involved fulfilling this goal. Vishay management believes that this only achieved employee empowerment. Vishay corporate core values Leadership example Employee empowerment Continuous improvement Total customer satisfaction very essence Vishay Quality Movement process. Training Vishay maintains that only realize aims employees well trained. therefore invests heavily courses provide employees with knowledge they need facilitate continuous improvement. training profile been established employees with emphasis being placed total quality leadership. long-term continuously improve training keep ahead projected changes business technology. EFQM Assessment Methodology From 1995, VISHAY started introduce EFQM (European Foundation Quality Management) methodology structuring Total Quality Management approach. This methodology, similar Malcolm Baldrige process, consists self-assessing various VISHAY divisions facilities according nine business criteria:
18349
Document Number: 80087 Rev. 1.3, 05-Sep-08
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Quality Information
Vishay Semiconductors
Leadership People Policy strategy Partnership resources Processes People results Customer results Society results performance results (see figure assessments conducted yearly basis trained empowered, internal Vishay assessors. This permits identification key-priority improvement projects measurement progress accomplished. EFQM methodology helps Vishay achieve world-class business excellence.
Enablers People
Quality Information
Employee Involvement Teams Vishay believe that every person company contribution make meeting target customer satisfaction. Management therefore involves employees higher higher levels motivation, thus achieving higher levels effectiveness productivity. Employee involvement teams, which both functional cross functional, combine varied talents from across breadth company. taking part training, these teams continually searching ways improve their jobs, achieving satisfaction themselves, company most important customer.
Results People Results Customer Results Performance Results
Leadership
Policy Strategy Partnership Resources
Processes
Society Results Innovation learning
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Fig. EFQM Criteria Self-Assessment
TOOLS
part search excellence, Vishay employs many different techniques tools. most important them are: Auditing well third party auditing employed approval 9000 customers, Vishay carries internal external auditing. There common auditing procedure suppliers sub-contractors between Vishay entities. This procedure also used inter-company auditing between facilities within Vishay. based "Continuous Improvement" concept with heavy emphasis other statistical tools control reduction variability. Internal audits carried routine basis. They include audits satellite facilities (e.g., sales offices, warehousing etc.). Audits also used widely determine attitudes expectations both within outside company.
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Failure Mode Effect Analysis (FMEA) FMEA technique analyzing possible methods failure their effect upon performance/reliability product/process. Process FMEAs performed processes. addition, product FMEAs performed critical customer products. Design Experiments (DOE)
www.vishay.com
technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com
Document Number: 80087 Rev. 1.3, 05-Sep-08
Quality Information
Quality Information
Vishay Semiconductors
There series tools that used statistical design experiments. consists formalized procedure optimizing analyzing experiments controlled manner. Taguchi factorial experiment design included this. They provide major advantage determining most important input parameters, making experiment more efficient promoting common understanding among team members methods principles used. Gauge Repeatability Reproducibility This technique used determine equipment's suitability purpose. used make certain that equipment capable functioning required accuracy repeatability. equipment approved before this technique. Quality Function Deployment (QFD) method translating customer requirements into recognizable requirements Vishay's marketing, design, research, manufacturing sales (including after-sales). process, which brings together life cycle product from conception, through design, manufacture, distribution, until served expected life.
Initially complaints forwarded appropriate sales office where in-depth information describing problem, using Vishay Product Analysis Request Return Form (PARRF), considerable help giving fast accurate response. necessary send back product logistical reasons, Sales Office issues Returned Material Authorization (RMA) number. receipt goods good condition, credit automatically issued.
QUALITY SERVICE
VISHAY believes that quality service equally important technical ability products meet their required performance reliability. objectives therefore include: On-time delivery Short response time customers' requests Rapid informed technical support Fast handling complaints partnership with customers
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there technical reason complaint, sample together with PARRF sent Sales Office forwarding Failure Analysis Department supplying facility. device's receipt will acknowledged report issued completion analysis. cycle time this analysis targets constantly monitored improve response time. Failure analysis normally consists electrical testing, functional testing, mechanical analysis (including X-ray), decapsulation, visual analysis electrical probing. Other specialized techniques (e.g. LCD, thermal imaging, SEM, acoustic microscopy) used necessary. analysis uncovers quality problem, Corrective Action Report (CAR) format will issued. subsequent returns handled with procedure.
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Customer Quality Complaints fall mainly into categories: Logistical Technical Vishay procedure detailing handling complaints.
Document Number: 80087 Rev. 1.3, 05-Sep-08 technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com www.vishay.com
Quality Information
Vishay Semiconductors
Quality Information
Customer notifies Vishay Sales Office complaint Sales obtains necessary information about return using attached form (Product Analysis Request Return Form)
Customer complaint regarding Commercial Aspects e.g. Incorrect products, stock rotation, wrong delivery times quantities
Customer complaint regarding Technical Aspects e.g. Product specification, labeling error, packaging issues Customer sends samples designated factory location (communicated Sales)
Customer receives analysis report from Vishay with reference number
return procedure
Entitled return/replacement products
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Sales assign number Customer returns product
Complaint Return Procedure
www.vishay.com
technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com
Document Number: 80087 Rev. 1.3, 05-Sep-08
Quality Information
Quality Information
Vishay Semiconductors
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Product Analysis Request Return Form (PARRF)
Document Number: 80087 Rev. 1.3, 05-Sep-08
technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com
www.vishay.com
Quality Information
Vishay Semiconductors
Quality Information
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Vishay Form
www.vishay.com
technical questions concerning emitters, contact: emittertechsupport@vishay.com technical questions concerning detectors, contact: detectortechsupport@vishay.com
Document Number: 80087 Rev. 1.3, 05-Sep-08
Quality Information
Quality Information
Vishay Semiconductors
Change Notification product process changes controlled released (Engineering Change Notification). This requires approval relevant departments. case major change, change forwarded customers Sales/ Marketing before implementation. Where specific agreements place, change will implemented unless approved customer.
values recorded separately with regard electrical mechanical (visual) rejects product type package.
RELIABILITY QUALIFICATION
Qualification used means verifying that product process meets specified reliability requirements. This also used verify release changes products processes including materials, packages, manufacturing locations. same time provides means obtain information performance reliability products technologies. There three types qualification release: Wafer process/technology qualification Package qualification Product/device qualification actual qualification procedure depends which these combinations these) qualified. Normally there three categories qualification order degree qualification testing required. qualification there different standards. Commodity Industrial products Vishay internal standard used. Automotive grade parts, qualification done according AEC-Q101. Accelerated testing normally used order produce results fast. stress level employed depends upon failure mode investigated. stress test that level used gives maximum acceleration without introducing untypical failure mode. tests used consist following: High temperature life test (static) High temperature life test (dynamic) HTRB (high temperature reverse bias)
QUALITY RELIABILITY ASSURANCE PROGRAM
Though both quality reliability designed into Vishay products, three basic programs must assure them: Average Outgoing Quality (AOQ) testing followed sample testing measure defect level shipped product. This defect level (AOQ) measured (parts million) Reliability qualification program assure that design, process change reliable Reliability monitoring program measure assure that there decrease reliability product
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Humidity 85/85 (with without bias) Temperature cycling High-temperature storage Low-temperature storage Marking permanency Lead integrity Solderability Resistance solder heat Mechanical shock (not plastic packages) Vibration (not plastic packages) characterization devices only subjected preconditioning simulate board assembly techniques using methods defined standard J-STD-020C before being subjected stresses.
PROGRAM
Before leaving factory, products sampled after testing ensure that they meet minimum quality level measure level defects. results accumulated expressed (parts million). They measure average number potentially failed parts
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