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Discrete Semiconductors Passive Components
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DATA BOOK
Zener Diodes Protection Components
VISHAY INTERTECHNOLOGY, INC.
DisCrete semiConDuCtors
rECtifiErS
SMall-Signal DiODES
ZEnEr SuPPrESSOr DiODES MOSfEts tranSiStOrS
OPtOElECtrOniCS
Passive ComPonents
CaPaCitOrS
rESiStivE PrODuCtS
MagnEtiCS
integrateD moDules strain sensors transDuCers
Schottky (single, dual) Standard, Fast Ultra-Fast Recovery (single, dual) Clamper/Damper Bridge Superectifier Sinterglass Avalanche Diodes Schottky Switching (single, dual) Tuner/Capacitance (single, dual) Bandswitching Zener Diodes (single, dual) (TransZorb, Automotive, ESD, Arrays) Power MOSFETs JFETs Bipolar Transistors Dual Gate MOSFETs MOSMICs® Emitters, Detectors Receiver Modules Opto Couplers Solid State Relays Optical Sensors LEDs Segment Displays Infrared Data Transceiver Modules Custom products Power Analog Switches Tantalum Capacitors Solid Tantalum Capacitors Tantalum Capacitors Ceramic Capacitors Multilayer Chip Capacitors Disc Capacitors Film Capacitors Power Capacitors Heavy Current Capacitors Aluminum Capacitors Silicon Capacitors Foil Resistors Film Resistors Thin Film Resistors Thick Film Resistors Metal Oxide Film Resistors Carbon Film Resistors Wirewound Resistors Variable Resistors Cermet Variable Resistors Wirewound Variable Resistors Conductive Plastic Variable Resistors Networks/Arrays Non-Linear Resistors Thermistors Thermistors Varistors Inductors Transformers
DC/DC COnvErtErS Strain gagES inStruMEntS PhOtOStrESS® inStruMEntS tranSDuCErS Load Cells Weighing Systems
WOrlD'S largESt ManufaCturErS DiSCrEtE SEMiCOnDuCtOrS PaSSivE COMPOnEntS
Zener Diodes Protection Components Databook 2004
Vishay Semiconductor GmbH P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423 Web: www.vishay.com
Information contained this paper intended provide product description. Such description does constitute assured characteristics legal sense, those design hints provide information regarding delivery conditions availability. Vishay Semiconductor GmbH makes representation that interconnection circuits described herein will infringe existing future patent rights, descriptions contained herein imply granting licenses make, sell equipment constructed accordance therewith. information presented this paper believed accurate reliable. However, responsibility assumed Vishay Semiconductor GmbH use. Part publication reproduced without special permission condition that author source quoted that copies such extracts placed disposal after publication. Written permission should obtained from publisher complete reprints translations. reserve right amend information without prior notice, including issue letters patent. products listed this catalog generally recommended life support systems where failure malfunction component directly threaten life cause injury. user products such applications assumes risks such will agree hold Vishay Semiconductor GmbH companies whose products represented this catalog, harmless against damages. operating parameters including 'typicals' must validated each customer application customer's technical experts. Brand product names used this booklet trademarks registered trademarks their respective holders.
2004 Copyright Vishay Intertechnology, Inc. Registered Trademarks Vishay Intertechnology, Inc. rights reserved. Printed (Germany) Specifications subject change without notice. Please view latest data sheet editions under www.vishay.com.
VISHAY
Vishay Semiconductors
Alphanumeric Index. Selector Guides. General Information. Conventions Used Presenting Technical Data. Assembly Instructions Physical Explanation. Taping Diodes. Quality Information. Reliability. Constituents Semiconductor Components Marking Diodes Zener Datasheets Datasheets Packages Application Notes Silicon Zener Diodes. Test Measurement Methods Zener Diodes. Temperature-Compensated Stabilizing Circuits Pulse Power Rating Semiconductors. Glossary. Symbols
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Alphanumeric Index
Vishay Semiconductors
GMF05C GMF05LC GMF05LC GMF05MC GMF05MC GSOT03 GSOT36 GSOT03-HT3 GSOT36-HT3 GTF701-HS3 GZF3V6C GZF91C
Numerics
1N4678 1N4717 1N4728A 1N4764A 1N5221B 1N5267B 1N746A 1N759A 1N957B 1N984B
AZ23-Series
MMBZ.VDA Series MMBZ4617 MMBZ4627 MMBZ4681 MMBZ4717 MMBZ5225 MMBZ5267 MMSZ4681 MMSZ4717 MMSZ5225 MMSZ5267
BZD27C3V6P BZD27C200P BZG03C-Series BZG04-Series BZG05C-Series BZM55-Series BZT03-Series BZT52-Series BZT55-Series BZW03-Series BZX384-Series BZX55-Series BZX584C-02V Series BZX84-Series BZX85-Series
Packages
Selector Guide Protection Selector Guide Zener Diodes SMF5V0A SMF51A SML4728 SML4764A
DZ23-Series
TLZ-Series TZM5221B TZM5267B TZM-Series VESD05C-FC1 VESDxx-02V TZQ5221B TZQ5267B TZS4678 TZS4717 TZX-Series
GCDA05 GCDA15C-1 GDZ-Series GL05-HT3 GL24-HT3 GL05T GL24T GMDA05 GMDA05-6 GMDA05C GMF05C
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Alphanumeric Index
Vishay Semiconductors
VISHAY
Z4KE100 Z4KE200A ZM4728A ZM4764A ZMU100 ZMU180 ZMY3V9 ZMY100 ZPU100 ZPU180 ZPY3V9 ZPY110
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Selector Guides
General Information
Zener Datasheets
Datasheets
Packages
Application Notes
Glossary
VISHAY
Selector Guide Zener Diodes
Vishay Semiconductors
Selector Guides
Zener Diodes (0.2
Part Number VZnom VZ-Specification Tolerance Groups Page
SOD-123, Single Diode
BZT52B2V4 BZT52B75 BZT52C2V4 BZT52C75 MMSZ4681 MMSZ4717
sod123
Pulse current Pulse current Thermal equilibrium Thermal equilibrium Thermal equilibrium
MMSZ5225C MMSZ5267C MMSZ5225B MMSZ5267B
SOD-323, Single Diode
BZX384B2V4 BZX384B75 BZX384C2V4 BZX384C75 GDZ2V0B GDZ36B
sod323
Pulse current Pulse current Pulse current
SMF, Single Diode
BZD27C3V6P C200P GZF3V6C GZF91C Pulse current Pulse current
SOD-523, Single Diode
BZX584C2V4-02V BZX584C15-02V Pulse current
sod523
SOT-23, Dual Common Anode
AZ23B2V7 AZ23B51 AZ23C2V7 AZ23C51 Pulse Current Pulse current
SOT-23, Dual Common Cathode
DZ23B2V7 DZ23B51 DZ23C2V7 DZ23C51 MMBZ15VDA MMBZ27VDA MMBZ15VDC MMBZ27VDC Pulse current Pulse current Pulse current Pulse current Pulse current Pulse current
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Selector Guide Zener Diodes
Vishay Semiconductors
VISHAY
Zener Diodes (0.2 (continued)
Part Number VZnom VZ-Specification Tolerance Groups Page
SOT-23, Single Diode
BZX84B2V4 BZX84B75 BZX84C2V4 BZX84C75 MMBZ4617 MMBZ4627 MMBZ4681 MMBZ4717 MMBZ5225B MMBZ5267B MMBZ5225C MMBZ5267C Pulse current Pulse current Pulse current Pulse current Thermal equilibrium Thermal equilibrium
MicroMELF, Single Diode
BZM55B Series BZM55C Series Pulse current Pulse current
micromelf
MiniMELF SOD-80, Single Diode
Series TZM5221B TZM5267B TZMB Series
minimelf
Pulse current Thermal equilibrium Pulse current Pulse current
Voltage Groups
TZMC Series
QuadroMELF SOD-80, Single Diode
BZT55B Series BZT55C Series TZQ5221B TZQ5267B
quadromelf
Pulse current Pulse current Thermal equilibrium Pulse current
TZS4678 TZS4717
DO-35, Single Diode
1N4678 1N4717 1N5221B 1N5267B 1N746A 1N759A
do35
Pulse current Thermal equilibrium Pulse current Thermal equilibrium Pulse current Pulse current Pulse current
Voltage Groups
1N957B 1N984B BZX55B Series BZX55C Series Series
Additionnal measurement Voltage group Vzmin
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Selector Guide Zener Diodes
Vishay Semiconductors
Selector Guides
Zener Diodes (1.0
Part Number VZnom VZ-Specification Tolerance Groups Page
DO-41 Glass, Single Diode
1N4728A 1N4764A BZX85B Series BZX85C Series
do41
Thermal equilibrium Pulse current Pulse current Pulse current Pulse current
ZPU100 ZPU180 ZPY3V9 ZPY110
DO-41 Plastic, Single Diode
Z4KE100A Z4KE200A Z4KE100 Z4KE200 Pulse current Pulse current
do204am
MELF Glass, Single Diode
ZM4728A ZM4764A ZMU100 ZMU180 ZMY3V9 ZMY100 Thermal equilibrium Pulse current Pulse current
DO-214AC, Single Diode
SML4728A SML4764A SML4728 SML4764 Pulse current Pulse current
Additionnal measurement Voltage group Vzmin
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Selector Guide Zener Diodes
Vishay Semiconductors
VISHAY
Selector Guides
Zener Diodes
Part Number VZnom VZ-Specification Tolerance Groups Page
DO-214AC, Single Diode
BZG03C. BZG05C. Pulse current Pulse current
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Selector Guide Zener Diodes
Vishay Semiconductors
Selector Guides
Zener Diodes
Part Number VZnom VZ-Specification Tolerance Groups Page
SOD-57, Single Diode
BZT03C. BZT03D. Pulse current Pulse current
sod57
SOD-64, Single Diode
BZW03C. BZW03D. Pulse current Pulse current
sod64
DO-214AC, Single Diode
BZG04. Pulse current
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Selector Guide Zener Diodes
Vishay Semiconductors
VISHAY
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Selector Guide Protection
Vishay Semiconductors
Selector Guides
SO-8 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMDA05
lines
lines
es8p4z
GCDA05
lines
lines
es8p4z4d4as
GMDA05-6
lines
lines
es8p6z2cc
GMDA05C
lines
es8p8z4as
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Selector Guide Protection
Vishay Semiconductors
VISHAY
LLP75-6A Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05C-HS3
12.5
lines
lines
es6pp5zca
LLP75-6A Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05MC-HS3
lines
lines
es6pp5zca
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Selector Guide Protection
Vishay Semiconductors
LLP75-6A Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05LC-HS3
12.5
lines
lines
es6pp5zca
LLP75-3B Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GSOT03-HT3
13.4
line line
GSOT04-HT3 GSOT05-HT3
es3pp1za
GSOT08-HT3 GSOT12-HT3 GSOT15-HT3 GSOT24-HT3 GSOT36-HT3 GL05-HT3
line
GL12-HT3 GL15-HT3
es3ppzdca
GL24-HT3
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Selector Guide Protection
Vishay Semiconductors
VISHAY
SOT-23 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GSOT03
13.4
line line line line line line line line line line line line
GSOT04 GSOT05
es3p1za
GSOT08 GSOT12 GSOT15 GSOT24 GSOT36 GL05T
GL12T GL15T
es3pzdca
GL24T
SOT-143 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GCDA15C-1
line
es4p2z2dap
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Selector Guide Protection
Vishay Semiconductors
SOT-363 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05C
12.5
lines
lines
es6p5zca
SOT-363 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05MC
lines
lines
es6p5zca
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Selector Guide Protection
Vishay Semiconductors
VISHAY
SOT-363 Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
GMF05LC
12.5
lines
lines
es6p5zca
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Selector Guide Protection
Vishay Semiconductors
Package Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
1000 Watt 8/20
SMF5V0A
10.3 11.2 12.9 13.6 14.4 15.4 18.2 19.9 21.5 23.2 24.4 27.6 29.2 32.4 35.5 38.9
21.7 (10/ 1000µs) 19.4 (10/ 1000µs) 17.9 (10/ 1000µs) 16.7 (10/ 1000µs) 15.5 (10/ 1000µs) 14.7 (10/ 1000µs) 13.9 (10/ 1000µs) 13.5 (10/ 1000µs) 11.8 (10/ 1000µs) (10/ 1000µs) 10.1 (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs)
21.7 19.4 17.9 16.7 15.5 14.7 13.9 13.5 11.8 10.1
line line line line line line line line line line line line line line line line line line line line
SMF6V0A SMF6V5A SMF7V0A SMF7V5A SMF8V0A SMF8V5A SMF9V0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A
es2p1z
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Selector Guide Protection
Vishay Semiconductors
VISHAY
Package (continued) Protection Diodes Arrays
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV] line line line line line line line line line line
Page
SMF26A
42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4
(10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs) (10/ 1000µs)
[pF]
SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A
es2p1z
Flipchip 1005 Package Protection Diodes Arrays
flipchip
Part Number
@IPP @tp=8/ 20µs
Pulse BiUniCapability Capability Peak directional directional contact Current protected protected IPPM lines lines [kV] [kV]
Page
[pF]
Watt 8/20
VESD05C-FC1
es2fc2zas
9/11
1/10
(IEC61000-4-2) (IEC61000-4-5)
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Selector Guide Protection
Vishay Semiconductors
Selector Guides
LLP75-6A Package EMI-Filter Protection Arrays
Part Number @IPP @tp=8/ 20µs Capability [kV] Capability contact [kV] Pulse Peak Current IPPM Page
[pF]
[µA]
Watt 8/20
GTF701-HS3
es6pp4z4r2cca
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Selector Guide Protection
Vishay Semiconductors
VISHAY
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Selector Guides
General Information
Zener Datasheets
Datasheets
Packages
Application Notes
Glossary
VISHAY
Vishay Semiconductors
Conventions Used Presenting Technical Data
Nomenclature Semiconductor Devices According Electron
part number semiconductor device consists letters followed serial number. example:
Material
Function
Serial number
18651
first letter indicates material used active part device. GERMANIUM (Materials with bandgap -1.0 SILICON (Materials with bandgap -1.3 GALLIUM-ARSENIDE (Materials with bandgap COMPOUND MATERIALS (For example Cadmium-Sulfide) second letter indicates circuit function. DIODE: detection, switching mixer DIODE: variable capacitance TRANSISTOR: power, audio frequency TRANSISTOR: power, audio frequency DIODE: tunnel TRANSISTOR: power, high frequency DIODE: oscillator miscellaneous DIODE: magnetic sensitive HALL EFFECT DEVICE: open magnetic circuit TRANSISTOR: power, high frequency
HALL EFFECT DEVICE: closed magnetic circuit PHOTO COUPLER DIODE: radiation sensitive DIODE: radiation generating THYRISTOR: power TRANSISTOR: power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE: multiplier, e.g., Varicap, step recovery DIODE: rectifying, booster DIODE: voltage reference voltage regulator, transient suppressor diode serial number consists four digit number from 9999 devices primarily intended consumer equipment. letter etc.) three-digit number from devices primarily intended professional equipment. version letter used indicate deviation single characteristic, either electrical mechanical. This letter does have fixed meaning. only exception letter indicating reversed voltage (e.g., collector case).
materials mentioned examples
Document Number 84121 Rev. 1.2, 08-Jan-04
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Vishay Semiconductors Polarity Conventions
voltage direction given arrow which points from measuring point reference point letter subscript, where first letter measuring point second letter reference point. general rules stated above also valid alternating quantities. Once direction selected, maintained throughout. alternating character quantity given with time-dependent change sign numerical values. Polarity conventions diodes Here, direction arrows selected such that numerical values currents voltages positive both forward reverse directions.
-VAB
9315
Figure
9317
numerical value voltage positive potential arrow tail higher than arrow head; i.e., potential difference from measuring point reference point positive. numerical value voltage negative potential arrow head higher than tail; i.e., potential difference from measuring point reference point negative. case alternating voltages, once voltage direction selected, maintained throughout. alternating character quantity given with time dependent change sign numerical values.
Figure
9316
Figure
numerical value current positive charge carriers moving direction arrow positive (conventional current direction), charge carriers moving against this direction negative. numerical value current negative, charge carriers moving direction arrow negative, charge carriers moving against this direction positive.
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Assembly Instructions
General
Semiconductor devices mounted position. terminal length bent distance greater than from case provided mechanical force effect case. device mounted near heat generating components, consideration must given resultant increase ambient temperature. sible, soldered only, that heat generated quickly conducted away. time during which specified maximum permissible device junction temperature exceeded during soldering operation should short possible, (i.e., silicon, seconds. Avoid force body leads during just after soldering. correct position already soldered device pushing, pulling twisting body. Prevent fast cooling after soldering. maximum soldering temperatures shown table
Flow Soldering Maximum Allowable Soldering Time Soldering Temperature Soldering Distance from Case Maximum Allowable Soldering Time
Soldering Instructions
Leaded Devices Protection against overheating essential when device being soldered. recommended, therefore, that connection terminals left long posIron Soldering Iron Temperature Soldering Distance from Case
Vertical Glass case Plastic case DIN41869 (SOT23)
Horizontal
Table Maximum soldering temperatures
Surface Mounted Devices Surface mounted devices (SMD) components which mounted directly surface printed circuit board without having drill holes. addition, these components completely submerged solder bath (overhead soldering). technology offers following main advantages: Higher packing density (miniaturization) Reduction component mounting costs fully automatic mounting Gluing case flow drag soldering, components must glued printed circuit board. adhesive used this purpose must electrically neutral must react chemically with materials printed circuit board components. adhesive must negatively affect subsequent soldering. After mounting, adhesive must hardened. ultraviolet and/or thermal radiation commonly used hardening uncritical
Document Number 84083 Rev. 1.2, 08-Jan-04
components. case other soldering methods, gluing omitted flux solder paste provides sufficient adhesion components printed circuit board. Soldering pins Vishay components already tinned. soldering, flow soldering, reflow soldering, vapor phase soldering permissible. maximum temperature over period must exceeded during soldering. aggressive fluxes used. soldering iron should used only exceptional cases (repairs, etc.). temperature regulated miniature soldering iron must used, care should taken avoid touching component with soldering iron. optoelectronic semiconductor components, maximum soldering temperature
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Cooling Cooling components with after soldering permissible. Cleaning cleaning necessary after soldering, recommended wash with water which contains detergent free deposits. Important layout notes components arranged rows, then separate soldering surfaces must provided each component. this carried out, block solder forms between components during soldering, rigid connection result. This cause breakage cracks component result slightest bending board, thus lead failures. necessary solder wire (standard conductor, etc.) board, separate soldering surface must provided order avoid excessive heating components during soldering with soldering iron. where Tjmax maximum junction temperature, Tamb highest ambient temperature likely reached under most unfavorable conditions, RthJA thermal resistance between junction ambient. diodes with axial leads, measured with heat sink specified distance from case, RthJC thermal resistance between junction case, RthCA thermal resistance between case ambient. value cooling dependent. When using heat sink, influenced through thermal contact between case heat sink, thermal distribution heat sink heat transfer surroundings. Therefore, maximum permissible total power dissipation given semiconductor device influenced only changing Tamb RthCA. value RthCA obtained either from data heat sink suppliers through direct measurements. Heat energy losses mainly conducted with power diodes without cooling pins through connecting leads hence board. Figure shows thermal resistance plotted function edge length. values valid with heat source middle plate, resting vertical position. With horizontal position, thermal resistance increases approximately
-Thermal Resistance(
9474
Heat Removal
keep thermal equilibrium, heat generated semiconductor junction(s) must removed. case low-power devices, natural heat conductive path between case surrounding usually adequate this purpose. However, case medium-power devices, heat radiation have improved star- flag-shaped heat dissipaters, which increase heat radiating surface. Finally, case high-power devices, special heat sinks must provided, cooling effect which increased further special coolants blowers. heat generated junction conveyed case header conduction rather than convection. measure effectiveness heat conduction inner thermal resistance thermal resistance junction case, RthJC, value which governed construction device. heat transfer from case surrounding involves radiation convection conduction. effectiveness transfer expressed terms RthCA-value, i.e., external case-ambient thermal resistance. total thermal resistance between junction ambient consequently RthJA RthJC RthCA. total maximum power, Ptot max' semiconductor device expressed follows jmax thJA thJA thCA
Length
Figure
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Document Number 84083 Rev. 1.2, 08-Jan-04
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Vishay Semiconductors
Pertinax boards thick Pertinax non-metallized Pertinax with copper metallization side; heat source fitted non-metallized side Pertinax with copper metallization side; heat source fitted non-metallized side Pertinax with copper metallization side; heat source fitted metallized side Pertinax with copper metallization both sides Pertinax with copper metallization side; heat source fitted metallized side Pertinax with copper metallization both sides Rtha: Thermal resistance boards Edge length When using cooling plates heat sinks without optimum performance, following approach acceptable. curves shown figures given thermal resistance, RthCA, using square plates aluminium with edge length with different thicknesses. device case should mounted directly cooling plate. edge length derived from figures given RthCA value must multiplied with where 1.00 vertical arrangement 1.15 horizontal arrangement 1.00 bright surface 0.85 dull black surface
K/W)
10°C
thCA
Plate thickness
7834
Figure
1000
K/W)
thCA
Plate thickness
7835
Figure
1000
Document Number 84083 Rev. 1.2, 08-Jan-04
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Document Number 84083 Rev. 1.2, 08-Jan-04
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Physical Explanation
General Terminology Semiconductor diodes used rectifiers, switchers, Varicaps voltage stabilizers (see chapter `Voltage Regulator Z-diodes'). Semiconductor diodes two-terminal solid-state devices having asymmetrical voltage-current characteristics. Unless otherwise stated, this means device single pn-junction corresponding characteristics shown figure Parallel resistance, Diode resistance resulting from rectification which acts damping resistance pre-tuned demodulation circuit. Diode capacitance, Total capacitance between diode terminals case, junction parasitic capacitances. Breakdown voltage, V(BR) Reverse voltage which small increase voltage results sharp rise reverse current. given technical data sheet specified current. Forward voltage, voltage across diode terminals which results from flow current forward direction. Forward current, current flowing through diode direction lower resistance. Forward resistance, quotient forward voltage across diode corresponding forward current. Forward resistance, differential differential resistance measured between terminals diode under specified conditions measurement, i.e., small-signal voltages currents point forward direction characteristic. Case capacitance, Ccase Capacitance case without semiconductor crystal. Integration time, With certain limitations, absolute maximum ratings given technical data sheets exceeded short time. mean value current voltage decisive over specified time interval termed integration time. These mean values over time interval, tav, should exceed absolute maximum ratings. Average rectified output current, IFAV average value forward current when using diode rectifier. maximum allowable average rectified output current depends peak value applied reverse voltage during time interval which current flowing. absolute maximum ratings, both following given: maximum permissible average rectified output current zero diode voltage (reverse)
9321
Figure
application voltage current curve given where saturation current temperature potential diode forward-biased (anode positive with respect cathode), forward current increases rapidly with increasing voltage. That resistance becomes very low. diode reverse-biased (anode negative with respect cathode), reverse current extremely low. This only valid until breakdown voltage V(BR) been reached. When reverse voltage slightly higher than breakdown voltage, sharp rise reverse current results. Bulk resistance Resistance bulk material between junction diode terminals.
Document Number 84078 Rev. 08-Jan-04
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Vishay Semiconductors
maximum permissible average rectified output current maximum value URRM during time interval which current flowing. Note: IFAV decreases with increasing value reverse voltage during interval current flow. Rectification efficiency, ratio load voltage peak input voltage rectifier. Reverse recovery time, time required current reach specified reverse current, after instantaneous switching from specified forward condition (IF) specified reverse bias condition (IR).
Reverse resistance, differential, differential resistance measured between terminals diode under specified condition measurement i.e., small-signal (ac) voltage currents point reverse-voltage direction characteristic. Peak forward current, IFRM maximum forward current with sine-wave operation, pulse operation, having duty cycle tP/T 0.5. Peak reverse voltage, VRRM maximum reverse voltage having operating frequency sine-wave well pulse operation. Peak surge forward current, IFSM maximum permissible surge current forward direction having specified waveform with short specified time interval unless otherwise specified. operating value. During frequent repetitions, there possibility change device's characteristic. Peak surge reverse voltage, VRSM maximum permissible surge voltage applied reverse direction. operating value. During frequent repetitions, there possibility change device's characteristic.
9322
Figure
Series resistance, total value resistance representing bulk, contact lead resistance diode given equivalent circuit diagram variable Varicaps. Junction capacitance, Capacitance junction diode which decreases with increasing reverse voltage. Reverse voltage, voltage drop which results from flow reverse current (through semiconductor diode). Reverse current, (leakage current) current which flows when reverse bias applied semiconductor junction. Reverse resistance, quotient reverse voltage across diode corresponding reverse current.
Power dissipation, electrical power converted into heat. Unless otherwise specified, this value given data sheets under absolute maximum ratings, with Tamb specified distance from case (both ends). Forward recovery time, time required voltage reach specified value after instantaneous switching from zero specified reverse voltage specified forward biased condition. This recovery time especially noticeable when higher currents switched within short time. reason that forward resistance during turn-on time could higher than current (inductive behavior). This result destruction diode because high instantaneous power loss constant current control used.
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This value inherent (rz) thermal differential (rzj) resistances. rzth Inherent differential resistance, rzj, breakdown region This value part total differential resistance Z-diode breakdown region. responsible short-time load change constant junction temperature.
9323
constant valid case where frequency load changes high that junction temperature does change. Thermal differential resistance, rzth, breakdown region thermal differential resistance result thermal characteristics diode. This should considered together with inherent differential resistance, rzj. constant
Figure
Voltage Regulator Diodes Z-diodes
voltage regulator diode diode which develops essentially constant voltage across terminals throughout specified current range. Special reverse-biased diodes known Z-diodes certain forward-biased silicon diodes used voltage regulator diodes. Z-diodes silicon diodes which result from specified applied reverse voltage onward rapid increase reverse current avalanche Z-breakdown voltage. These diodes operated permanently this breakdown region. sharp rise reverse current corresponding breakdown voltage nearly constant. Z-diodes used voltages above lower operating voltages needed, above mentioned forward-biased silicon diodes used. Operating working voltage, breakdown region, Voltage across terminals Z-diode specified value reverse current breakdown region. Operating working current breakdown region, Reverse current flowing allowable area breakdown region Z-diode. Differential resistance breakdown region, Differential quotient between operating voltage operating current specified working current.
thJA
Measuring current, value given technical data serves measuring condition operating voltage, inherent differential resistance, rzj, temperature coefficient operating voltage, TKVZ. Temperature coefficient, TKVZ This characteristic gives temperature dependence operating voltage specified operating current such unit measurement used either 10-4/ Z-voltage, operating working voltage Z-current, operating working current Z-resistance, differential resistance
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Vishay Semiconductors Varicap Diodes
Varicap diodes used different circuits, such tuning, AFC, frequency multiplier, modulation, couple element filters with controlled bandwidth, parametric amplification, switching VHF- microwave regions, etc. these applications, basic variation junction capacitance with reverse voltage been investigated. simplified equivalent circuit encapsulated Varicap diode shown figure
Ccas
Figure
0.5-abrupt junction, planar epitaxial technology 0.75-diode with retrograded junction Retrograded junction diodes 0.75) capable very large capacitance deviation therefore suitable tuning with large frequency range (i.e., BB205 VHF). these diodes, function reverse voltage, i.e., f(VR). quality, Varicap important factor calculated follows: series resistance, decreases with increasing applied bias. also frequency dependent. non-linearity capacitance characteristic results signal distortion deformation ratio signal amplitude applied bias. push-pull arrangements further minimize distortion even with larger range signal. Because signal modulates diode counter phase, capacitance changes. diode almost compensated. temperature coefficient junction capacitance approximately 10-4/°C with result change mV/°C diffusion voltage, temperature coefficient junction capacitance decreases with increasing reverse voltage. junction resistance, decreases series resistance, decreases approximately with increase junction temperature 1°C.
9325
Ccase Case capacitance Junction capacitance Series resistance Series inductance Junction resistance case silicon (Varicap) diodes, junction resistance, very high zero negative (reverse) bias. high resonant frequency, Ccase neglected equivalent circuit shown figure
Diodes
9326
Figure
Junction capacitance calculated follows: Junction capacitance zero bias Diffusion voltage, silicon exponent different values according technology used, such 0.33-diffused diode with linear technology
stands p-intrinsic-n. this type diode, heavily doped region heavily doped region separated layer high resistivity material which nearly intrinsic (I), shown figure Under reverse bias, diode very high impedance microwave frequencies), whereas moderate forward current very impedance. This permits diode low-loss switch with small self capacitance. resistance diode varied continuously from large small values changing diode bias. diode therefore used more advantageously attenuator -circuit. Typical examples are: VHF-band switch diode BA282, BA682 attenuator diode BA479G BA679.
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Vishay Semiconductors
Ccas
9327
Figure
Width I-Zone Space charge carrier area Total series inductance Total resistance layers resistance associated with contacts these Layers represent resistance capacitance portion I-layer exclusive swept-out region.
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Taping Diodes
Axial Lead Components
Diodes rectifiers with axial leads normally delivered taped form according 286-1 (see figure cathode side designated colored tape. Taped devices normally delivered ammoboxes (Ammopack). Delivery reels available request.
Package tape reel Quantity Reel SOD-57 SOD-64 DO-35 DO-41 5.000 2.500 10.000 5.000
Diodes DO-35 packages also available with tapewidth radial taped. details please contact factory. Quantities dimensions
Available Packaging tape reel Quantity Reel Ammo Pack Quantity 5.000 2.500 10.000 5.000
Taping Specifications DO-35, DO-41, SOD-57 SOD-64 Package
Description Component Pitch Devices with diameter Component Pitch Devices with diameter Inside Tape Spacing Lead Lead Eccentricity Lead Extension Lead Bending Cumulative Pitch Exposed Adhesive Tape Width Tape Leader Empty Spaces Polarity Marking Symbol ID1-D2I Beginning reel ammo pack. Consecutive missing components allowed polarized components shall oriented same direction. cathode tape shall colored, anode tape shall white light beige. Specification (mm) pitch 300.0
Allowable deviation above taped steps
(0.031) max. (0.055) max.
(0.031) max.
(0.236 0.0157) Dimensions apply both sides
15802
Figure
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Ammopack Specification (DO-35, DO-41, SOD-57 SOD-64 Packages)
Description Length Width Height Symbol Specification Inches 10.25 2.75 5.75 0.65 Millimeters 16.0
15800
Material: corrugated board (neutral)
Inspection hole (both sides)
Figure
Reel Specification
Description Symbol Reel Size 10`` SOD-57 SOD-64 Arbor Hole Diameter Core Diameter Reel Diameter Drive Hole Diameter Reel Width Drive Arbor Hole Spacing Core Material Reel Material Plastic Plastic Reel Size 14`` DO-35 DO-41 Carton Carton
15801
Figure
19016
Figure
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Vishay Semiconductors Tape Reel Surface-Mounted Devices (SMDs)
SMDs normally delivered taped blister tape reeled according 286-3. mounting side component oriented bottom side tape. components with terminations, cathode side oriented sprocket hole. components SOT-23 package, side from which single termination emerges oriented sprocket hole. Components delivered either reels. quantities reel, below.
Case Type Suffix Quantity Reel Size (Diameter) Tape Width
DO-214AC LLP75-3B LLP75-6A MicroMELF MiniMELF SOD-80 QuadroMELF SOD-80 (DO-219AB) SO-8 SOD-123 SOD-323 SOD-523 SOT-23 SOT-363 SOT-490
GS08 GS18 GS08 GS18 GS08 GS18 GS08 SG18 GS08 GS18 GS18 GS08 GS18 GS08 GS18 GS08 GS08 GS18 GS08 GS18 GS08
1500 6000 3000 10000 3000 10000 2500 10000 2500 10000 2500 10000 3000 10000 2500 3000 10000 3000 10000 3000 3000 10000 3000 10000 3000
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De-reeling direction
5.75 5.25
1.85 1.65
959662
2.05 1.95
0.3max
technical drawings according specifications
Figure
Packages Devices MiniMELF, SOD-80 MicroMELF, SOD-80 QuadroMELF, SOD-123, SOD-323, SOT-23
Dimensions (mm) max. 10.4
0.05
120° GS08: GS18:
12.9 12.6 63.5 60.5
Identification Label Vishay Type Group Tape Code Production Code Quantity
Figure
9155
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Missing devices maximum total number components reel missing exclusively beginning reel. maximum three consecutive components missing, provided this followed consecutive components (see figure
De-reeling direction
8158
Labelling
empty compartments min. empty compartments
Tape leader
Carrier leader
Carrier trailer
18916
Figure
Figure Labelling taping reel
18917
Figure Labelling carton
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Quality Information
Vishay Semiconductors' Continuous Improvement Activities
Quality training personnel including production, development, marketing sales departments Zero defect mindset Permanent quality improvement process Total Quality Management (TQM) Vishay Semiconductors' Quality Policy established Management Board Quality system certified 9001: 2000 Quality system certified ISO/TS 16949: 2002 Environmental System certified ISO14001 Work Safety system certified OHSAS18001 Vishay Semiconductors' Tools Continuous Improvement Vishay Semiconductors follows Rules EFQM Quality Management system Vishay Semiconductors qualifies materials, processes process changes Vishay Semiconductors uses Process FMEA (Failure Mode Effects Analysis) processes. Process machine capability well Gauge (Repeatability Reproducibility) proven Vishay Semiconductors internal qualifications correspond IEC68-2, AEC-Q101 Vishay Semiconductors periodically requalifies device types (Long Term Monitoring). Vishay Semiconductors uses significant production parameters. performed trained operators. Vishay Semiconductors' testing final products. Vishay Semiconductors' release carried sampling. Sampling acceptance criterion always
16966
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Vishay Semiconductors Create First-Class Quality, On-Time Delivery, Satisfy Customers' Requirements
18587 18586
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 14001 1996
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 16949 2002
18771
18592
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 9001 2000
Figure Shanghai Vishay Semiconductor Co., Ltd., China 14001 1996
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18772 19018
Figure Shanghai Vishay Semiconductor Co., Ltd., China ISO/TS 16949 2002
Figure Vishay Semiconductor GmbH, D-Heilbronn 16949 2002
19017
18812
Figure Vishay Semiconductor GmbH, D-Heilbronn 14001 1996
Figure Vishay General Semiconductor GmbH, D-Freiburg 9001 2000
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Vishay Semiconductors
18811
18788
Figure Vishay General Semiconductor GmbH, D-Freiburg 9000 1998
Figure Vishay General Semiconductor S.A.S, F-Colmar 14001 1996
18793
18814
Figure Vishay General Semiconductor GmbH, D-Freiburg 14001 1996
Figure Vishay General Semiconductor S.A.S, F-Colmar 9001 2000
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18813
18773
Figure Vishay General Semiconductor S.A.S, F-Colmar 9000 1998
Figure Vishay Hungary Ltd., H-Budapest, 14001 1997
18775 18774
Figure Vishay Hungary Electronics CO., H-Budapest ISO/TS 16949 2002
Figure Vishay Hungary Electronics CO., ISO/TS 16949 2002
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Vishay Semiconductors General Quality Flow Chart
Development
Material
Qualification
Incoming inspection
Production
Wafer processing
Quality control
Assembly
Quality control
100% Final test
release sampling Acceptance criterion
Quality control
Monitoring
Statistical Process Control Average Outgoing Quality
Stock/ customer
11464
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Vishay Semiconductors Vishay Quality Road
Business excellence
Integrated Management System
2005
ISO/TS 16949 14001 Locations
VDA; Locations OHSAS18001
2000
14001 9000
Customer Satisfaction Measurement EFQM Approach
1995
Environmental Certification acc. (EMAS) 9001 Certification
18667
1990
Education Training
Qualification Release
3000
16946
Wafer process qualification
Package qualification
Device type qualification
Monitoring
Qualification process changes
Figure Structure 3000
wafer processes, packages device types qualified according internal Vishay Semiconductors specification 3000. 3000 consists five parts (see Figure 15). Wafer process release: wafer process release fundamental release qualification various technologies used Vishay Semiconductors. Leading device types defined various technologies. Three wafer lots these types subjected
extensive qualification procedure used represent this technology. positive result will lead release technology. Package release: package release fundamental release qualification different packages used. Package groups defined. Critical packages selected: assembly lots subjected qualification procedure represented. positive result will release similar packages.
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Device type release: device type released release individual designs. Monitoring: Monitoring serves both continuous monitoring production source data calculation early failures (early failure rate: EFR). Product process changes released (Engineering Change Note). This includes proving process capability meeting quality requirements. Test procedures utilized 68-2-. MIL-STD-750 respectively. process-FMEA performed processes (FMEA Failure Mode Effect Analysis). addition, design- product-FMEA used critical products meet agreed customer requirements. Design Experiments (DOE) tool statistical design experiments used optimization processes. Systems (processes, products procedures) analyzed optimized using designed experiments. significant advantage compared conventional methods efficient performance experiments with minimum effort determining most important inputs optimizing system. part continuous improvement process, Vishay employees trained thinking using statistical methods procedures.
Statistical Methods Prevention
manufacture high-quality products, sufficient inspect product production process. Quality 'designed-in' during process product development. addition that, 'designing-in' must also ensured during production flow. Both will achieved means appropriate measurements tools. Statistical Process Control (SPC) R&R- (Repeatability Reproducibility) tests Up-Time Control (UTC) Failure Mode Effect Analysis (FMEA) Design Experiments (DOE) Quality Function Deployment (QFD) Vishay been using tool production since 1990/91. using SPC, deviations from process control goals quickly established. This allows control processes before process parameters specified limits. assure control processes, each process step observed supervised trained personnel. Results documented. Process capabilities measured expressed process capability index (Cpk). Validation process capability required processes before they released production. Before using equipment gauges production, machine capability (Cmk machine capability index) (Repeatability Reproducibility) used validate equipment's fitness use. Up-Time recorded Up-Time Control (UTC) system. This data determines intervals preventive maintenance, which basis maintenance plan.
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Reliability
requirements concerning quality reliability products always increasing. sufficient only deliver fault-free parts. addition, must ensured that delivered goods serve their purpose safely failure free, i.e. reliably. From delivery device final product, there some occasions where device final product fail despite testing outgoing inspection. principle, this sequence valid components product. these reasons, negative consequences failure, which become more serious expensive later they occur, obvious. manufacturer therefore interested supplying products with lowest possible (Average Outgoing Quality) value (Early Failure Rate) value (Long-term Failure Rate) value tional life derived. usage life time normally period constant failure rate. failures occuring during this period random. Within this period failure rate failures Quantity Time failure hours measure (Failures Time number failures device hours). Example sample semiconductor devices tested operating life test (dynamic electric operation). devices operate period 10,000 hours. Failures: failure after 1000 failure after 2000 failure rate calculated from this sample 1000 2000 10000
4.01 -4983000
Average Outgoing Quality (AOQ)
outgoing products sampled after testing. This known "Average Outgoing Quality" (AOQ). results this inspection recorded (parts million) using method defined JEDEC
Early Failure Rate (EFR)
estimate ppm) number early failures related number devices used. Early failures normally those which occur within first 1000 hours. Essentially, this period time covers guarantee period finished unit. values therefore very important device user. early life failure rate heavily influenced complexity. Consequently, 'designing-in' better quality during development design phase, well optimized process control during manufacturing, significantly reduces value. Normally, early failure rate should significantly higher than random failure rate. given (parts million).
This -value FIT, this sample failure rate 0.04 1000 average.
Early Failures Operating Period Wear Failures
11401
Long-Term Failure Rate (LFR)
shows failure rate during operational period devices. This period particular interest manufacturer final product. Based value, estimations concerning long-term failure rate, reliability device's module's operaFigure Bath curve
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Vishay Semiconductors Confidence Level
failure rate calculated from sample estimate unknown failure rate lot. interval failure rate (confidence interval) calculated, depending confidence level sample size. following valid: larger sample size, narrower confidence interval. lower confidence level statement, narrower confidence interval. confidence level applicable failure rate whole when using estimated value derived from x2-distribution. practice, only upper limit confidence interval (the maximum average failure rate) used. Therefore:
Number Failures 0.60 1.68 2.67 3.67 4.67 5.67 6.67 7.67 8.67 9.67 10.67 Confidence Level 0.93 2.00 3.08 4.17 5.24 6.25 7.27 8.33 9.35 10.42 11.42 Table 2.31 3.89 5.30 6.70 8.00 9.25 10.55 11.75 13.00 14.20 15.40 2.96 4.67 6.21 7.69 10.42 11.76 13.16 14.30 15.63 16.95
Operating Life Tests
Number devices tested: Number failures: (positive qualification): Test time: 2000 hours Confidence level: x2/2 0.93
0,93 2000 This means, that failure rate does exceed 0.93 1000 (9300 FIT) with probability This example demonstrates that only possible verify values 9300 with confidence level normal qualification test devices, 2000 obtain values which meet today's requirements FIT), following conditions have fulfilled: Very long test periods Large quantities devices Accelerated testing higher temperature)
[FIT] Number failures Confidence level Sample size Time hours Device hours x2/2 taken from Table1. above example from Table1: x2/2 3.08 4983000
3,08 4983000 This means that failure rate does exceed 0.0618 1000 (618 FIT) with probability confidence level chosen from table x2/2
4983000 This means that failure rate does exceed 0.106 1000 (1060 FIT) with probability 1,06
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Vishay Semiconductors Mean Time Failure (MTTF)
systems which repaired whose devices must changed, e.g. semiconductors, following valid: MTTF MTTF average fault-free operating period monitored (time) unit. Accelerating Stress Tests Innovation cycles field semiconductors becoming shorter shorter. This means that products must brought market quicker. same time, expectations concerning quality reliability products have become higher. Manufacturers semiconductors must therefore assure long operating periods with high reliability short time. Sample stress testing most commonly used assuring this. rule Arrhenius describes this temperaturedependent change failure rate.
Example following conditions apply operating life stress test: Environmental temperature during stress test Power dissipation device Thermal resistance junction/environment RthJA system temperature junction temperature results from: RthJA Operation field ambient temperature average power dissipation utilized. This results junction temperature operation activation energy used opto components resulting acceleration factor
347K 373K
373K 347K
Boltzmann's constant 8.63 10-5 eV/K Activation energy Junction temperature real operation Kelvin Junction temperature stress test Kelvin Failure rate real operation (T1) Failure rate stress test (T2) acceleration factor described exponential function being:
This signifies that, this example, failure rate lower factor compared stress test. Other accelerating stress tests Humidity (except displays type TDS.) Temperature cycling Temperature interval specified tests carried according requirements appropriate IEC-standards (see also chapter 'Qualification Release').
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Vishay Semiconductors Activation Energy
There some conditions which need fulfilled order Arrhenius' method: validity Arrhenius' rule verified. 'Failure-specific' activation energies must determined. These conditions verified series tests. Today, this procedure generally accepted used basis estimating operating life. values activation energies determined experiments different failure mechanisms. Values often used different device groups are: Opto components Bipolar Transistors Diodes Sinterglass Diodes using this method, possible provide longterm predictions actual operation semiconductors even with relatively short test periods.
Acceleration factor
1000
11369
Junction Temperature(°C)
Figure Acceleration factor different activation energies normalized
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Constituents Semiconductor Components
Responsible electronic component equipment manufacturers already preparing time when lifespan their products comes scrutinizing materials incorporated their future recylcability. Recycling laws have already come into force Germany ("Kreislauf-Wirtschaftsgesetz") guidelines electronic scrap preparation. suitable waste disposal program preventative measure reduction content hazardous damaging materials such components. order conform this procedure, detailed information about materials their quantities needed. This present overview answers questions forward customers constituents their function most important Vishay Semiconductor's semiconductor products. Special significance given so-called "Hazardous Substances". demonstrates that Vishay Semiconductor products under normal operating conditions expose applier environment hazard. However, most products nevertheless contain small necessary quantities "Hazardous Substances" which treated correctly through accidents released small scale into environment. present information produced with greatest possible care. suggestions improvement this brochure welcome. (known dioxin) ppb. lists themselves, details content composition separated into individual parts semiconductor component. most important these are: Active element: active element either silicon chip optoelectronic components chip containing combinations (Al) (As, These doped with very small amounts boron, arsenic, phosphorus, zinc germanium etc. metallization consists thin layers aluminium, gold titanium. chips generally bonded lead frame with silver epoxy have gold aluminium wires bonded lead frame. Lead frame: electrical connection, metal lead frame made from alloys such FeNi (42) CuFe partly totally plated with silver commonly used. metal alloys contain traces silver, zinc phosphorus. Case: semiconductor chip protected from environment case glass, plastic metal. glass composed oxides silicon lead together with boron aluminium. Plastic cases composed epoxy resin filled with weight quartz particles. Antimony trioxide brominated epoxy resin TBA) added flame retardants. Antimony bromine amount about respectively. use: use, content hazardous substances which importance. Germany, there series lists which give materials which potentially hazardous people environment, example: Appendix "Hazardous Materials Regulations", TRGS ("MAK-Wert-Liste") "Catalog Materials Hazardous Water Supply". These lists, however, only partially consistent. names used often different materials with same chemical composition. Furthermore, trivial trade names often adds fusion. Vishay Semiconductor therefore their descriptions that proposed Zentralverband Elektrotechnik Elektronikindustrie e.V. (ZVEI; Central Association Electrical Engineering Electronic Industry) harmonization nomenclature hazardous substances. Statements made safety precautions used during storage disposal mechanical, chemical thermal means more important
Definitions
Vishay Semiconductor offers wide range semiconductor components including transistors, diodes opto-electronic components. These have been manufactured various standard packages. following pages, these packages listed together with their materials shown weight percentages. order limit number tables, components whose structure composition same have been compiled families. many cases, different lead frames together with chips different sizes used package. This usually means that there slight differences quantities declared material. weight percent however, valid representative sample relevant family. order sensibly reduce number quantities materials contained respective components, quantities smaller than 0.1% weight have been stated following list traces. This case unless lower limits forced law, e.g., cadmium PCDD well PCDF
Document Number 84084 Rev. 1.2, 29-Apr-04
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chemicals (so-called "Leitchemikalien"). These listed tables order their potential risk. Their effect upon people environment also listed special precautions emphasized. Notes: following information been prepared exact reliable possible. manufacture semiconductor components however, subject regular change without special notification. publication this brochure excludes responsibility resulting from use.
Ozone Depleting Substances
Ozone Depleting Substances been totally eliminated Vishay Semiconductor doing meets legal requirements defined following documents. "Montreal Protocol" together with "London Amendments" Appendix "List Transitional Substances" "Clean Act", Amendments 1990, "Environmental Protection Agency" (EPA), USA, Class Ozone Depleting Substances "European Council Resolution" number 540/EEC 91/690/eec Appendix (Transitional Substances) Vishay Semiconductor guarantees that components contain manufactured without Ozone Depleting Substances.
Explanation Abbreviations
While information weight percent believed correct, discrepancies depending upon component type possible. Material information etc. Material listed "Material Hazardous Production" Trace material 0.1% weight; ppm; concerning ***) PCDD PCDF Dioxin content lies below agreed limits "Rules Hazardous Materials", replaced soon technically suitable alternative material available ***) Traces cadmium only found lead frames made copper CMT: Material containing carcinogens, mutagens terratogens Tox: Material toxic very toxic Material with allergy producing characteristics Halogen containing material Material hazardous water supply Storage, suitable disposal Disposable Mechanical disposal Chemical disposal Thermal disposal Handling
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Declaration Material Contents DO-214 Package
MATERIAL CONTENT Part Material weight 27.6 10.05 0.62 0.39 38.66 30.05 1.95 35.3 0.8774 89.78 0.997 0.0002 0.98 1.2925 82.20 0.2406 15.30 0.0031 0.0362 1.57 0.20 2.30 16893 3145 7440-21-3 7440-22-4 7440-02-0 14808-60-7 10.20 0.02 11468 1303 7439-92-1 7440-31-5 7440-22-4 85.13 392761 9.35 5.52 43132 25487 7440-50-8 7439-89-6 7440-31-5 weight total weight
Mold 50.40
71.39 360739 14808-60-7 26.00 131356 25928-94-3 1.60 1.01 8104 5097 1309-64-4 7726-95-6
epoxy resin
TOTAL Lead frame tinned 46.20 TOTAL TOTAL Silicon chip 2.10
SiO2
DO-214 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
Solder 1.30
TOTAL Total weight
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Declaration Material Contents SOD-80 Package
MATERIAL CONTENT Part Material weight TOTAL Package Glass 41.10
weight 61.38 27.05 8.63 2.67 0.28 62.92 27.35 7.67 0.71 0.71 0.63 80.19 16.56 1.62 1.41 0.22
total weight 359138 158242 50468 15629 1628 259179 112658 31583 2930 2930 2605 2413
Leads Tinned 58.60
11.03 4.86 1.55 0.48 0.05 17.97 7.96 3.46 0.97 0.09 0.09 0.08 12.65 0.0741 0.0153
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0
minimelf
Al2O3
MiniMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.30
TOTAL
0.0015 0.0013 0.0002 0.0924
TOTAL Total weight
Declaration Material Contents SOD-80 Package
MATERIAL CONTENT Part Material weight TOTAL Package Glass SiO2 46.20
quadromelf
weight 61.39 27.02 8.64 2.67 0.28 62.96 27.33 7.72 0.71 0.71 0.58 80.22 16.62 1.58 1.38 0.20
total weight 327965 144341 46129 14285 1488 291360 126484 35713 3274 3274 2678 2414
Leads Tinned 53.50
11.02 4.85 1.55 0.48 0.05 17.95 9.79 4.25 0.11 0.11 0.09 15.55 0.0811 0.0168 0.0016 0.0014 0.0002 0.101
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0
QuadroMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.30
TOTAL
TOTAL Total weight
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Vishay Semiconductors
Declaration Material Contents MicroMELF Package
MATERIAL CONTENT Part Material weight 4.39 1.97 0.62 0.09 0.01 7.08 3.21 1.39 0.39 0.04 0.04 0.03 0.074 0.0153 0.0015 0.0013 0.0002 0.0923 12.3 80.17 16.58 1.63 1.41 0.22 6030 1247 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0 62.94 27.25 7.65 0.78 0.78 0.59 261565 113263 31779 3259 3259 2445 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 weight 62.01 27.82 8.76 1.27 0.14 total weight 357716 160524 50520 7334
Leads Tinned 57.70
TOTAL
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0
micromelf
Package Glass SiO2 41.50
Na2O
MicroMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.80
TOTAL
SiO2
TOTAL Total weight
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents DO-35 Package
MATERIAL CONTENT Part Material weight 67.17 29.78 9.43 0.57 0.11 107.1 11.24 1.38 0.13 0.13 0.11 17.9 0.1003 0.0208 0.002 0.0018 0.0003 0.125 80.11 16.60 1.60 1.40 0.20 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0 62.83 27.39 7.71 0.73 0.73 0.61 89866 39176 11033 1039 1039 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 weight 62.74 27.82 8.81 0.53 0.10 total weight 537037 238097 75395 4557
Leads tinned 85.70
TOTAL
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0
Package glass 14.30
do35
DO-35 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip 0.10
Al2O3
TOTAL
TOTAL Total weight
Declaration Material Contents DO-41 Package
MATERIAL CONTENT Part Material weight 166.58 73.86 23.38 1.39 0.27 265.48 27.88 12.15 3.41 0.31 0.31 0.27 44.33 0.2523 0.0474 0.0053 0.0043 0.0006 0.3099 310.1199 81.41 15.30 1.71 1.39 0.19 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0 62.89 27.41 7.69 0.70 0.70 0.61 89901 39178 10996 1000 1000 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 weight total weight
Leads tinned 85.70
TOTAL
62.75 537147 27.82 238166 8.81 0.52 0.10 75390 4482
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0
Package glass 14.30
do41
DO-41 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip 0.10
Al2O3
TOTAL
TOTAL Total weight
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Declaration Material Contents DO-41 Plastic Package
MATERIAL CONTENT Part Material weight 283.8 10.8 294.6 1.57 0.09 0.04 0.896 0.004 32.457 9.12 3.42 0.364 0.137 0.102 Trace Trace 45.6 11.0 94352 26512 9942 1058 60676-86-0 28064-14-4 9003-35-4 1309-64-4 1333-86-4 14464-46-1 7440-38-2 7439-92-1 100.0 3488 2605 7440-21-3 14808-60-7 92.4 4564 7440-31-5 7439-92-1 7440-22-4 weight 96.3 total weight 825000 31395
Leads tinned 85.6 Solder pellet
TOTAL TOTAL SiO2 TOTAL
7440-50-7 7439-92-1
Chip
do204am
traces Coating Elastomer TOTAL
DO-41 Plastic Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
Molding Silica, (Epoxy) vitreous 13.3 Epikote Phenolic resin Antimony oxide Carbon black Cristobalite Arsenic Lead TOTAL Total weight
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-57 Package
MATERIAL CONTENT Part Material weight 184.98 70.24 58.8 1.99 0.32 0.32 0.32 316.97 21.45 19.4 7.66 2.55 51.06 0.999 0.111 1.11 369.14 90.00 10.00 2706 7440-21-3 7429-90-5 42.01 37.99 15.00 4.99 58108 52555 20751 6908 1317-36-8 14808-60-7 1303-86-2 1344-28-1 weight 58.36 22.16 18.55 0.63 0.10 0.10 0.10 total weight 501111 190280 159289 5391
Leads tinned 85.90
7440-50-8 7439-89-6 7439-98-7 7440-31-5 7440-22-4 7440-44-0 7782-44-7
TOTAL Package glass 13.80
sod57
SOD-57 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
TOTAL Silicon chip 0.30 TOTAL
Total weight
Declaration Material Contents SOD-64 Package
MATERIAL CONTENT Part Material weight 429.95 163.26 136.67 4.69 0.74 0.74 0.74 736.79 49.85 45.1 17.8 5.93 118.68 2.322 0.258 2.58 90.00 10.00 2706 7440-21-3 7429-90-5 42.00 38.00 15.00 5.00 58097 52561 20745 6911 1317-36-8 14808-60-7 1303-86-2 1344-28-1 weight 58.35 22.16 18.55 0.64 0.10 0.10 0.10 total weight 501078 190269 159280 5466
Leads tinned 85.90
7440-50-8 7439-89-6 7439-98-7 7440-31-5 7440-22-4 7440-44-0 7782-44-7
TOTAL Package glass 13.80
sod64
SOD-64 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
TOTAL Silicon chip 0.30 TOTAL Total weight
traces
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Declaration Material Contents (DO-219AB) Package
MATERIAL CONTENT Part Material weight 6.198 0.153 0.008 0.002 0.210 6.57 0.142 0.005 0.003 0.006 0.16 0.468 0.002 99.57 0.43 31587 7440-21-3 14808-60-7 90.85 3.07 2.11 3.97 9584 7439-92-1 7440-31-5 7440-22-4 107-41-5 weight total weight 10302 14174
Lead frame tinned 44.3
TOTAL
94.34 418311 2.32 0.12 0.03 3.20
7440-50-8 7439-89-6 7440-66-6 7723-14-0 7440-31-5
Solder paste (chip solder)
Hexyleneglyco TOTAL Silicon dioxide TOTAL
Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Molding compound 51.4 Silicon chip
And/or traces Au,As,Ti,Ag,Al, 0.47 5.258 1.143 0.533 0.229 69.00 354866 14808-60-7 15.00 7.00 3.00 77145 36001 15429 29690-82-2 9003-35-4 40039-93-8 Cristalline Silica Polyglycidyl ether Phenolic resin Brominated epoxy resin Organo functional silan Antimony trioxid Catalyst TOTAL Total weight
0.076
1.00
5143
2530-83-8
0.229 0.076 0.076 7.62 14.8
3.00 1.00 1.00
15429 5143 5143
1309-64-4 8015-86-9 603-35-0
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOT-23 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
SOT-23 Diode
MATERIAL CONTENT Part Material weight 0.02 0.01 0.008 0.008 0.06 2.81 2.97 0.00054 2.43 0.04215 0.01785 0.06 0.0996 0.0004 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.15288 0.40 30.0 30.0 0.005 38.2 13642 13642 17380 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 3411 7440-57-5 99.60 0.40 11323 7440-21-3 14808-60-7 70.3 29.8 4792 2029 7440-22-4 55.00 0.01 44.99 337650 276197 25321-22-6 1333-86-4 14808-60-7 weight 96.2 total weight 306954 2274 1137 6821
Lead frame tinned 31.9
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding Mineral reinforcement (PPS, Polyphenylene 1.4- Dichlorobenzene Sulfide) 61.4 Other Carbon black Silicon dioxide TOTAL Glue Silver powder Hardener epoxy resin TOTAL Chip SiO2 TOTAL Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
traces
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-123 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
sod123
SOD-123 Diode
MATERIAL CONTENT Part Material weight 0.015 0.01 0.007 0.007 0.078 2.72 0.0006 2.6994 0.04215 0.01785 0.06 0.07968 0.00032 0.08 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.12278 0.37 32.4 32.4 0.005 33.2 12963 12963 13263 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 3241 7440-57-5 99.60 0.40 8608 7440-21-3 14808-60-7 70.3 29.8 4553 1928 7440-22-4 55.00 0.01 44.99 356487 291606 25321-22-6 1333-86-4 14808-60-7 weight 95.7 total weight 280869 1620 1080 8426
Lead frame tinned 29.4
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding (PPS, Polyphenylene Sulfide) 64.8
Mineral reinforcement 1.4- Dichlorobenzene Other Carbon black Silicon dioxide TOTAL Silver powder Hardener epoxy resin TOTAL
Glue
Chip
SiO2 TOTAL
traces Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-323 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds
sod323
Limit
Analysis
SOD-323 Diode
MATERIAL CONTENT Part Material weight 1.28 0.008 0.005 0.004 0.004 0.04 1.34 1.705 0.00031 1.39 0.04215 0.01785 0.06 0.07968 0.00032 0.08 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.12278 0.37 32.4% 0.5% 0.3% 32.4% 1.1% 0.005% 33.2% 24092 24092 24650 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 100% 6023 7440-57-5 99.60% 0.40% 15997 7440-21-3 14808-60-7 70.3% 29.8% 8462 3584 7440-22-4 55.00% 0.01% 44.99% 342301 280002 25321-22-6 1333-86-4 14808-60-7 weight 95.5% 0.6% 0.4% 0.3% 0.3% 3.0% total weight 256977 1606 1004 8031
Lead frame tinned 26.9
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding (PPS, Polyphenylene
Sulfide) 62.2
Mineral reinforcement 1.4-Dichlorobenzene Other Carbon black Silicon dioxide TOTAL Silver powder Hardener epoxyresin TOTAL
Glue
Chip
SiO2 TOTAL
traces Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-523 Package
MATERIAL CONTENT Part Material weight 0.65 0.17 0.026 0.85 0.627 0.015 0.053 0.0001 0.000 0.001 0.696 0.034 0.0035 0.0002 0.0002 0.038 0.013 0.013 1.60 100.0 8141 7440-57-5 89.71 9.23 0.53 0.53 21293 2192 7440-21-3 7440-57-5 14808-60-7 7429-90-5 90.10 392660 2.16 7.62 0.01 0.03 0.09 9394 33191 7440-50-8 7440-22-4 7440-31-5 7440-21-3 7440-47-3 7440-32-6 weight 77.0 20.0 total weight
Mold compound 53.2
409882 14808-60-7 106463 25928-94-3 15969 1309-64-4
epoxy resin
TOTAL Lead frame tinned 43.6 TOTAL Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip
SiO2
sod523
SOD-523 Diode
TOTAL Bond wire TOTAL Total weight
traces
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOT-363 Package
MATERIAL CONTENT Part Material weight 2.45 0.89 0.05 0.03 3.42 1.98 0.23 0.077 0.02 0.01 0.01 2.33 0.2188 93.50 0.0122 0.0012 0.0009 0.0009 0.23 0.018 0.02 100.0 99.90 3001 7440-57-5 5.21 0.51 0.38 0.38 36473 2034 7440-21-3 7440-57-5 14808-60-7 7429-90-5 12033-89-5 85.09 330055 9.88 3.31 0.86 0.43 0.43 38340 12835 3334 1667 1667 7440-50-8 7440-22-4 7440-31.5 7440-02-0 7440-47-3 7440-32-6 weight total weight
Mold compound 57.10
71.64 408401 14808-60-7 26.02 148358 25925-94-3 1.46 0.88 8335 5001 1309-64-4 7726-95-6
epoxy resin
TOTAL Lead frame tinned 38.70 Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip 3.90 TOTAL
SiO2
SOT-363 Diode
Si3N4 TOTAL Bond wire TOTAL Total weight
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Declaration Material Contents LLP-75 Package
MATERIAL CONTENT Part Material weight 1.34 0.003 0.003 0.003 0.08 1.43 2.608 0.463 0.16 0.016 0.01 3.2603 0.063 0.027 70.2 29.8 12272 5204 7440-22-4 79.99 14.20 5.00 0.50 0.31 506398 89901 31650 3165 1942 25928-943 1309-64-4 1333-86-3 7631-86-3 weight 93.7 total weight 260189 15534
Lead frame tinned 27.8
(plating) TOTAL
7440-50-8 7440-31-5 7440-66-6 7440-47-3 7440-31-5
Mould- Amorphou silica 63.3 Others
LLP-75 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Chip Glue
Epoxy resin Antimony trioxide Carbon black TOTAL Silver powde Hardener epoxy resin TOTAL SiO2
0.09 0.299 0.001 99.60 0.40 58018 7440-21-3 14808-607
traces TOTAL Bond wire TOTAL 0.07 0.07 13592 7440-57-5
Total weight
Document Number 84084 Rev. 1.2, 29-Apr-04
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VISHAY
Vishay Semiconductors
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Document Number 84084 Rev. 1.2, 29-Apr-04
VISHAY
Vishay Semiconductors
Marking Diodes
GMDA05-6
18954
18583
Figure SO-8
Figure DO-214
View from
Figure LLP75-6A
Date code: Year Month
Cathode band Type code Date code
18920
Figure SOD-123
Type code
18904
View from
View from Date code: Year Month
18919
Type code
Cathode
Figure (DO-219AB)
Cathode band
type code
Figure SOD-323
18918
Document Number 84052 Rev. 1.2, 28-Apr-04
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VISHAY
Vishay Semiconductors
18914
Annual code
Manufacturer symbol Type code
Weekly code
18905
Cathode band
Figure SOD-523
Type code
Annual code
Type code
Weekly code
Figure SOT-363
Figure SOT-143
Type code Manufacturer symbol
18970
BZT03C220
Annual code
Weekly code
Figure SOT-23
18581
Figure SOD-57
Type code Manufacturer symbol
18584
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Document Number 84077 Rev. 1.2, 28-Apr-04
VISHAY
Vishay Semiconductors
view from
Cathodering unwind
BZW03C27
18576 18582
Figure DO-41
Figure SOD-64
view from
view from
Cathodering unwind
Cathodering unwind
18572 18580
Figure MicroMELF Label with information TYPE reel package
Figure DO-35
Document Number 84052 Rev. 1.2, 28-Apr-04
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VISHAY
Vishay Semiconductors
view from
Cathodering
unwind
18578
Figure SOD-80 MiniMELF Label with information TYPE reel package
view from
Cathodering
unwind
18579
Figure SOD-80 QuadroMELF Label with information TYPE reel package
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Document Number 84052 Rev. 1.2, 28-Apr-04
Selector Guides
General Information
Zener Datasheets
Datasheets
Packages
Application Notes
Glossary
VISHAY
1N4678 1N4717
Vishay Semiconductors
Small Signal Zener Diodes
Features
Zener voltage specified Maximum delta given from Very high stability noise
Applications
Voltage stabilization
9367
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging codes/options: reel, k/box Ammo tape tape), k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation Z-current Test condition Symbol Ptot Value Ptot/VZ Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction temperature Storage temperature range Junction ambient constant Test condition Symbol Tstg RthJA Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Symbol Typ. Unit
Document Number 85586 Rev. 1.4, 16-Apr-04
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1N4678 1N4717
Vishay Semiconductors Electrical Characteristics
Partnumber Zener Voltage typ. 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 1N4686 1N4687 1N4688 1N4689 1N4690 1N4691 1N4692 1N4693 1N4694 1N4695 1N4696 1N4697 1N4698 1N4699 1N4700 1N4701 1N4702 1N4703 1N4704 1N4705 1N4706 1N4707 1N4708 1N4709 1N4710 1N4711 1N4712 1N4713 1N4714 1N4715 1N4716 1N4717
VISHAY
Max.Reverse Current 1.89 2.31 2.52 2.835 3.15 3.465 3.78 4.095 4.515 4.935 5.355 5.88 6.51 7.14 7.875 8.61 9.135 9.555 10.5 11.55 12.6 13.65 14.7 15.75 16.8 17.85 18.9 19.95 23.1 25.2 26.25 28.35 29.4 31.5 34.65 37.8 40.95 45.15 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01
Test Voltage 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 20.4 21.2 22.8 27.3 29.6 32.6
Max. Zener Current 31.8 27.4 26.2 24.8 21.6 20.4 17.5 16.3 15.4 14.5 13.2 12.5 11.9 10.8
Max. Voltage Change 0.70 0.70 0.75 0.80 0.85 0.90 0.95 0.95 0.97 0.99 0.99 0.97 0.96 0.95 0.90 0.75 0.08 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.22 0.24 0.25 0.27 0.28 0.33 0.36 0.39 0.43
min. 1.71 2.09 2.28 2.565 2.85 3.135 3.42 3.705 4.085 4.465 4.845 5.32 5.89 6.46 7.125 7.79 8.265 8.645 10.45 11.4 12.35 13.3 14.25 15.2 16.15 17.1 18.05 20.9 22.8 23.75 25.65 26.6 28.5 31.35 34.2 37.05 40.85
Toleranzing voltage designation (VZ). type numbers shown have standard tolerance nominal zener voltage. Maximum zener current ratings (IZM). Maximum zener current ratings based maximum zener voltage individual units. Reverse leakage current (IR). Reverse leakage currents guaranteed measured shown table. Maximum voltage change VZ). Voltage change equal difference between
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Document Number 85586 Rev. 1.4, 16-Apr-04
VISHAY
1N4678 1N4717
Vishay Semiconductors
Typical Characteristics (Tamb unless otherwise specified)
-Total Power Dissipation
-Temperature Coefficient 10-4
Z=5mA
Z-Voltage
9602
Tamb Ambient emperature(°C
9600
Figure Total Power Dissipation Ambient Temperature
Figure Temperature Coefficient Z-Voltage
1000
Diode Capacitance -VoltageChange
=25°C
R=2V =25°C
Z=5mA
9598
9601
Z-Voltage
Z-Voltage
Figure Typical Change Working Voltage under Operating Conditions Tamb=25°C
VZtn Relative VoltageChange
Figure Diode Capacitance Z-Voltage
Ztn=V Zt/V Z(25°C)
Forward Current
10-4/K
=25°C
10-4/K 10-4/K 10-4/K 10-4/K 10-4/K 10-4/K
0.01 0.001
9605
9599
Junction Temperature
Forward Voltage
Figure Typical Change Working Voltage Junction Temperature
Figure Forward Current Forward Voltage
Document Number 85586 Rev. 1.4, 16-Apr-04
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1N4678 1N4717
Vishay Semiconductors
9604
VISHAY
Differential Z-Resistance
1000
Z-Current
Ptot=500mW Tamb=25°C
Z=1mA 10mA
9606
=25°C Z-Voltage
Z-Voltage
Figure Z-Current Z-Voltage
Figure Differential Z-Resistance Z-Voltage
9607
Z-Current
Ptot=500mW Tamb=25°C
Z-Voltage
Figure Z-Current Z-Voltage
Zthp -ThermalResistance PulseCond.(K/W)
1000
tp/T=0.5 tp/T=0.2 Single Pulse tp/T=0.1 tp/T=0.02 tp/T=0.05 10-1 Pulse Length =(-VZ+(V Z2+4rzj T/Zthp)1/2)/(2rzj) tp/T=0.01 RthJA=300K/W T=Tjmax-Tamb
9603
Figure Thermal Response
DO-35 Package Dimension
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Package Section
Document Number 85586 Rev. 1.4, 16-Apr-04
VISHAY
1N4728A 1N4764A
Vishay Semiconductors
Zener Diodes
Features
Silicon Planar Power Zener Diodes stabilizing clipping circuits with high power rating. Standard Zener voltage tolerance
Applications
Voltage stabilization
17173
Mechanical Data
Case: DO-41 Glass case Weight: approx. Packaging Codes/Options: reel k/box Ammo mag. tape), k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation Z-current Test condition Tamb Symbol Ptot Value PV/VZ Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction temperature Storage temperature range Junction ambient (3/8 constant Test condition Symbol Tstg RthJA Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Symbol Typ. Unit
Document Number 85816 Rev. 1.6, 16-Apr-04
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1N4728A 1N4764A
Vishay Semiconductors Electrical Characteristics
1N4728A.1N4764A Partnumber Nominal Zener Voltage1) 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A 1N4754A 1N4755A 1N4756A 1N4757A 1N4758A 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A 1N4764A
VISHAY
Test Current 15.5 12.5 11.5 10.5
Maximum Dynamic Impedance
Maximum Reverse Leakage Current Test Voltage 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 62.2 69.2 76.0
Surge curent @Tamb 1380 1260 1190 1070
Maximum Regulator Current2) Tamb
1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000 3000
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
Based dc-measurement thermal equilibrium while maintaining lead temperature (TL) (3/8 from diode body. Valid provided that electrodes distance from case kept ambient temperature. Additionnal measurement Voltage group Vzmin
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Document Number 85816 Rev. 1.6, 16-Apr-04
VISHAY
1N4728A 1N4764A
Vishay Semiconductors
Typical Characteristics (Tamb unless otherwise specified)
18481
Figure Admissible Power Dissipation Ambient Temperature
DO-41 Glass Package Dimension Package Section
Document Number 85816 Rev. 1.6, 16-Apr-04
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1N4728A 1N4764A
Vishay Semiconductors
VISHAY
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Document Number 85816 Rev. 1.6, 16-Apr-04
VISHAY
1N5221B 1N5267B
Vishay Semiconductors
Small Signal Zener Diodes
Features
Silicon Planar Power Zener Diodes. Standard Zener voltage tolerance These diodes also available MiniMELF case with type designationTZM5221 .TZM5267, SOT-23 case with type designation MMBZ5225 .MMBZ5267 SOD-123 case with types designation MMSZ5225 MMSZ5267
9367
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging codes/options: Ammopack tape), k/box reel k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition Symbol Tstg Value PV/VZ Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Test condition (3/8 TL=constant Symbol RthJA Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Symbol Typ. Unit
Document Number 85588 Rev. 1.6, 16-Apr-04
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1N5221B 1N5267B
Vishay Semiconductors Electrical Characteristics
1N5221B.1N5267B Partnumber Nominal Zener Voltage1) IZT, 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5264B Test Current Maximum Dynamic Impedance1) Maximum Dynamic Impedance 0.25 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 1000 1100 1300 1400 Typical Temperature Coeffizient (%/K) -0.085 -0.085 -0.080 -0.080 -0.075 -0.070 -0.065 -0.060 +0.055 +0.030 +0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097
VISHAY
Maximum Reverse Leakage Current
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Document Number 85588 Rev. 1.6, 16-Apr-04
VISHAY
Partnumber Nominal Zener Voltage1) IZT, 1N5265B 1N5266B 1N5267B
1N5221B 1N5267B
Vishay Semiconductors
Test Current Maximum Dynamic Impedance1) Maximum Dynamic Impedance 0.25 1400 1600 1700 Typical Temperature Coeffizient (%/K) +0.097 +0.097 +0.098 Maximum Reverse Leakage Current
Based dc-measurement thermal equilibrium; lead length (3/8 thermal resistance heat sink
Typical Characteristics (Tamb unless otherwise specified)
RthJA -Therm.Resist.Junction/ Ambient K/W)
VZtn Relative VoltageChange
Ztn=V Zt/V Z(25°C)
9599 10-4/K
TL=constant Lead Length
10-4/K 10-4/K 10-4/K 10-4/K 10-4/K 10-4/K
Junction Temperature
Figure Thermal Resistance Lead Length
Figure Typical Change Working Voltage Junction Temperature
9602
=25°C
Z=5mA
9598
-Total Power Dissipation
1000
-VoltageChange
Z-Voltage
Tamb Ambient emperature(°C
Figure Typical Change Working Voltage under Operating Conditions Tamb=25°C
Figure Total Power Dissipation Ambient Temperature
Document Number 85588 Rev. 1.6, 16-Apr-04
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1N5221B 1N5267B
Vishay Semiconductors
-Temperature Coefficient 10-4
VISHAY
9604
Z-Current
Ptot=500mW Tamb=25°C
Z=5mA
Z-Voltage
9600
Z-Voltage
Figure Temperature Coefficient Z-Voltage
Figure Z-Current Z-Voltage
Diode Capacitance
9607
R=2V =25°C
9601
Z-Current
Ptot=500mW Tamb=25°C
Z-Voltage
Z-Voltage
Figure Diode Capacitance Z-Voltage
Figure Z-Current Z-Voltage
Forward Current
=25°C
Differential Z-Resistance
1000
Z=1mA 10mA
0.01 0.001
9606
=25°C Z-Voltage
9605
Forward Voltage
Figure Forward Current Forward Voltage
Figure Differential Z-Resistance Z-Voltage
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Document Number 85588 Rev. 1.6, 16-Apr-04
VISHAY
Zthp -ThermalResistance PulseCond.(K/W)
1N5221B 1N5267B
Vishay Semiconductors
1000
tp/T=0.5 tp/T=0.2 Single Pulse tp/T=0.1 tp/T=0.02 tp/T=0.05 10-1 Pulse Length =(-VZ+(V Z2+4rzj T/Zthp)1/2)/(2rzj) tp/T=0.01 RthJA=300K/W T=Tjmax-Tamb
9603
Figure Thermal Response
DO-35 Package Dimension Package Section
Document Number 85588 Rev. 1.6, 16-Apr-04
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1N5221B 1N5267B
Vishay Semiconductors
VISHAY
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Document Number 85588 Rev. 1.6, 16-Apr-04
VISHAY
1N746A 1N759A
Vishay Semiconductors
Small Signal Zener Diodes
Features
Silicon Planar Power Zener Diodes. Standard Zener voltage tolerance suffix.
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging codes/options: reel, k/box Ammo tape tape), k/box
9367
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Zenner current (see Table "Characteristics") Power dissipation
Test condition
Symbol
Value
Unit
Tamb
Ptot
measured that leads distance from case kept ambient temperature
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Maximum junction temperature Storage temperature range
Test condition
Symbol RthJA
Value
Unit °C/W
Valid provided that leads distance from case kept ambient temperature
Document Number 85756 Rev. 1.2, 15-Jul-03
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1N746A 1N759A
Vishay Semiconductors Electrical Characteristics
Partnumber Nominal Zener Voltage IZT3) 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N752A 1N753A 1N754A 1N755A 1N756A 1N757A 1N758A 1N759A
VISHAY
Test Current
Maximum Dynamic Impedance IZT1)
Maximum Regulator Current IZM2)
Maximum Reverse Leakage Current Tamb Tamb
Zener impedance derived from voltage which results when current having value equal Zener current (IZT) superimposed IZT.Zener impedance measured points insure sharp knee breakdown curve eliminate unstable units.
2)Valid
provided that leads distance from case kept ambient temperature.
Measured with device junction thermal equilibrium.
DO-35 Package Dimension Package Section
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Document Number 85756 Rev. 1.2, 15-Jul-03
VISHAY
1N957B 1N984B
Vishay Semiconductors
Small Signal Zener Diodes
Features
Very sharp reverse characteristic Siliconic Planar Power Zener Diodes. Very high stability reverse current level VZ-tolerance
9367
Applications
Voltage stabilization
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging codes/options: reel, k/box Ammo tape tape), k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Zener current table (see Table Characteristics Power dissipation
Test condition
Symbol
Value
Unit
Ptot
5001)
Valid provided that leads distance from case kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol RthJA
Value 3001)
Unit °C/W
Valid provided that leads distance from case kept ambient temperature.
Document Number 85590 Rev. 1.5, 16-Apr-04
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1N957B 1N984B
Vishay Semiconductors Electrical Characteristics
Partnumber Nominal Zener Voltage VZ3) 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B 1N966B 1N967B 1N968B 1N969B 1N970B 1N971B 1N972B 1N973B 1N974B 1N975B 1N976B 1N977B 1N978B 1N979B 1N980B 1N981B 1N982B 1N983B 1N984B
VISHAY
Test Current
Maximum Zener Impedance
Maximum Regulator Current IZM2)
Maximum Reverse Current
18.5 16.5 12.5 11.5 10.5
11.5
1000 1000 1000 1000 1500 1500 1500 2000 2000 2000 2000 3000 3000
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
Maximum
Test Voltage 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 62.2 69.2
Zener Impedance derived from voltage which results when current having value equal Zener current (IZT) superimposed IZT. Zener Impedance measured points insure sharp knee breakdown curve eliminate unstable units.
Valid provided that leads distance 3/8" from case kept ambient temperature. Measured with device junction thermal equilibrium.
DO-35 Package Dimension Package Section
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Document Number 85590 Rev. 1.5, 16-Apr-04
VISHAY
AZ23-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
These diodes also available other case styles configurations including: dual diode common cathode configuration with type designation DZ23, single diode SOT-23 case with type designation BZX84C, single diode SOD-123 case with type designation BZT52C. Dual Silicon Planar Zener Diodes, Common Anode Zener voltages graded according international standard. parameters valid both diodes case. diodes case
18070
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel, tape), k/box GS08 reel, tape), K/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation
Test condition
Symbol Ptot
Value 3001)
Unit
Device fiberglass substrate, layout
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol RthJA
Value 4201)
Unit °C/W
Device fiberglass substrate, layout
Document Number 85759 Rev. 1.4, 08-Jul-04
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AZ23-Series
Vishay Semiconductors Electrical Characteristics
Partnumber Marking Code Zener Voltage Range1) Dynamic Resistance 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 (<83) (<95) (<95) (<95) (<95) (<95) (<78) (<60) (<40) (<10) (<8) (<7) (<7) (<10) (<15) (<20) (<20) (<25) (<30) (<40) (<50) (<50) (<55) (<80) (<80) (<80) (<80) (<90) (<90) (<100) (<100) (<100) <500 <500 <500 <500 <500 <500 <500 <480 <400 <200 <150 <110 <110 <170 <170 <220 <220 <220 <250 <250 <250 <250 <300 <700 <750 <750 Test Current Temperature Coefficient Zener Voltage
VISHAY
Reverse Voltage
AZ23C2V7 AZ23C3V0 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 AZ23C4V7 AZ23C5V1 AZ23C5V6 AZ23C6V2 AZ23C6V8 AZ23C7V5 AZ23C8V2 AZ23C9V1 AZ23C10 AZ23C11 AZ23C12 AZ23C13 AZ23C15 AZ23C16 AZ23C18 AZ23C20 AZ23C22 AZ23C24 AZ23C27 AZ23C30 AZ23C33 AZ23C36 AZ23C39 AZ23C43 AZ23C47 AZ23C51
10-4/°C
10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1
>0.8 >7.5 >8.5 >22.5
Tested with pulses
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Document Number 85759 Rev. 1.4, 08-Jul-04
VISHAY
Electrical Characteristics
Partnumber Marking Code Zener Voltage Range1) Dynamic Resistance 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 (<83) (<95) (<95) (<95) (<95) (<95) (<78) (<60) (<40) (<10) (<8) (<7) (<7) (<10) (<15) (<20) (<20) (<25) (<30) (<40) (<50) (<50) (<55) (<80) (<80) (<80) (<80) (<90) (<90) (<100) (<100) (<100) <500 <500 <500 <500 <500 <500 <500 <480 <400 <200 <150 <110 <110 <170 <170 <220 <220 <220 <250 <250 <250 <250 <300 <700 <750 <750 Test Current
AZ23-Series
Vishay Semiconductors
Temperature Coefficient Zener Voltage
Reverse Voltage
AZ23B2V7 AZ23B3V0 AZ23B3V3 AZ23B3V6 AZ23B3V9 AZ23B4V3 AZ23B4V7 AZ23B5V1 AZ23B5V6 AZ23B6V2 AZ23B6V8 AZ23B7V5 AZ23B8V2 AZ23B9V1 AZ23B10 AZ23B11 AZ23B12 AZ23B13 AZ23B15 AZ23B16 AZ23B18 AZ23B20 AZ23B22 AZ23B24 AZ23B27 AZ23B30 AZ23B33 AZ23B36 AZ23B39 AZ23B43 AZ23B47 AZ23B51
10-4/°C
2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.49 6.08 6.66 7.35 8.04 8.92 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1
>0.8 >7.5 >8.5 >22.5
Tested with pulses
Document Number 85759 Rev. 1.4, 08-Jul-04
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AZ23-Series
Vishay Semiconductors Typical Characteristics (Tamb unless otherwise specified)
°C/W
VISHAY
18114
18121
Figure Forward characteristics
Figure Thermal Differential Resistance Zener Voltage
18115
18122
Figure Admissible Power Dissipation Ambient Temperature
Figure Dynamic Resistance Zener Voltage
18120
18123
Figure Dynamic Resistance Zener Current
Figure Temperature Dependence Zener Voltage Zener Voltage
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Document Number 85759 Rev. 1.4, 08-Jul-04
VISHAY
AZ23-Series
Vishay Semiconductors
18124
18127
Figure Change Zener Voltage Junction Temperature
Figure Change Zener voltage from turn-on point thermal equilibrium Zener voltage
18125
18128
Figure Temperature Dependence Zener Voltage Zener Voltage
Figure Change Zener voltage from turn-on point thermal equilibrium Zener voltage
18126
Figure Change Zener Voltage Junction Temperature
Document Number 85759 Rev. 1.4, 08-Jul-04
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AZ23-Series
Vishay Semiconductors
VISHAY
18111
Figure Breakdown Characteristics
18112
Figure Breakdown Characteristics
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Document Number 85759 Rev. 1.4, 08-Jul-04
VISHAY
AZ23-Series
Vishay Semiconductors
18113
Figure Breakdown Characteristics
SOT-23 Package Dimension Package Section
Document Number 85759 Rev. 1.4, 08-Jul-04
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AZ23-Series
Vishay Semiconductors
VISHAY
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Document Number 85759 Rev. 1.4, 08-Jul-04
VISHAY
BZD27C3V6P BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon Planar Zener Diodes profile surface-mount package Zener surge current specification leakage current Excellent stability High temperature soldering: °C/10 sec. terminals
17249
Mechanical Data
Case: JEDEC DO-219AB (SMF®) Plastic case Weight: approx. Packaging codes/options: GS18 reel, tape), k/box GS08 reel, tape), k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation Test condition Non-repetitive peak pulse power square pulse2) dissipation 10/1000 waveform (BZD27C7V5P BZD27-C100P)2) 10/1000 waveform (BZD27C110P BZD27-C200P)2)
Symbol Ptot Ptot PZSM PRSM PRSM
Value 0.81)
Unit
Mounted epoxy-glass with pads thick) prior surge
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient air1) Thermal resistance junction lead Maximum junction temperature Storage temperature range
Test condition
Symbol RthJA RthJL
Value
Unit
Mounted epoxy-glass with pads thick)
Document Number 85810 Rev. 1.8, 19-Jan-04
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BZD27C3V6P BZD27C200P
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Symbol Typ.
VISHAY
Unit
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Document Number 85810 Rev. 1.8, 19-Jan-04
VISHAY
Electrical Characteristics
BZD27C3V6P BZD27C200P
Vishay Semiconductors
When used voltage regulator diodes unless otherwise noted) Partnumber Marking Code Working Voltage1) BZD27C3V6P BZD27C3V9P BZD27C4V3P BZD27C4V7P BZD27C5V1P BZD27C5V6P BZD27C6V2P BZD27C6V8P BZD27C7V5P BZD27C8V2P BZD27C9V1P BZD27C10P BZD27C11P BZD27C12P BZD27C13P BZD27C15P BZD27C16P BZD27C18P BZD27C20P BZD27C22P BZD27C24P BZD27C27P BZD27C30P BZD27C33P BZD27C36P BZD27C39P BZD27C43P BZD27C47P BZD27C51P BZD27C56P BZD27C62P BZD27C68P BZD27C75P BZD27C82P BZD27C91P BZD27C100P BZD27C110P BZD27C120P BZD27C130P BZD27C150P BZD27C160P BZD27C180P BZD27C200P
Differential Resistance rdif
Temperature Coefficient %/°C -0.14 -0.14 -0.12 -0.1 -0.08 -0.04 -0.01 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 -0.04 -0.04 -0.02 0.02 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
Test Current
Reverse Current Reverse Voltage
10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9
10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1
Pulse test:
Document Number 85810 Rev. 1.8, 19-Jan-04
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BZD27C3V6P BZD27C200P
Vishay Semiconductors Electrical Characteristics
When used protection diodes unless otherwise noted) Partnumber Rev. Breakdown Voltage V(BR)R Itest BZD27C7V5P BZD27C8V2P BZD27C9V1P BZD27C10P BZD27C11P BZD27C12P BZD27C13P BZD27C15P BZD27C16P BZD27C18P BZD27C20P BZD27C22P BZD27C24P BZD27C27P BZD27C30P BZD27C33P BZD27C36P BZD27C39P BZD27C43P BZD27C47P BZD27C51P BZD27C56P BZD27C62P BZD27C68P BZD27C75P BZD27C82P BZD27C91P BZD27C100P BZD27C110P BZD27C120P BZD27C130P BZD27C150P BZD27C160P BZD27C180P BZD27C200P
VISHAY
Test Current Itest
Temperature Coefficient
Clamping Voltage
Reverse Current Stand-Off Voltage 1500 1200
Itest %/°C 0.07 0.08 0.08 0.09 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09
11.3 12.3 13.3 14.8 15.7 18.9 20.9 22.9 25.6 28.4 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5
IRSM1) 13.3 12.2 11.3 10.1 0.72 0.65 0.59 0.53 0.48 0.43 0.39
10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1
Non-repetitive peak reverse current accordance with "IEC 60-1, Section (10/1000 pulse); Fig.
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Document Number 85810 Rev. 1.8, 19-Jan-04
VISHAY
BZD27C3V6P BZD27C200P
Vishay Semiconductors
Typical Characteristics (Tamb unless otherwise specified)
PRSM-Max. Pulse Power Dissipation
10.00
VZnom Zener Voltage
Forward Current
Typ.
Max.
1.00
0.10
17411
Forward Voltage
17414
Figure Forward Current Forward Voltage
Figure Maximum Pulse Power Dissipation Zener Voltage
Typ. Junction Capacitance
10000 C5V1P 1000 C6V8P C12P C18P
IRSM
1000
C27P C200P Reverse Voltage C51P
17415
17412
Figure Typ. Diode Capacitance Reverse Voltage
Figure Non-Repetitive Peak Reverse Current Pulse Definition
-Power Dissipation
DO-219AB (SMF) Package Dimension Package Section
point temperature
ambient temperature
17413
Tamb Ambient Temperature
Figure Power Dissipation Ambient Temperature
Document Number 85810 Rev. 1.8, 19-Jan-04
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BZD27C3V6P BZD27C200P
Vishay Semiconductors
VISHAY
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Document Number 85810 Rev. 1.8, 19-Jan-04
VISHAY
BZG03C-Series
Vishay Semiconductors
Zener Diodes
Features
Glass passivated junction High reliability Voltage range Fits onto footpads Wave reflow solderable
15811
Applications
Voltage stabilization
Mechanical Data
Case: DO-214AC Weight: approx. Packaging Codes/Options: reel reel k/box
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Power dissipation Test condition RthJA K/W, Tamb RthJA K/W, Tamb repetitive peak surge power sq.pulse, dissipation prior surge Junction temperature Storage temperature range Symbol Pdiss Pdiss PZSM Tstg Value 1.25 Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction lead Junction ambient mounted epoxy-glass hard tissue, Fig. mounted epoxy-glass hard tissue, Fig. mounted Al-oxid-ceramic (Al2O3), Fig. Test condition Symbol RthJL RthJA RthJA RthJA Value Unit
Document Number 85593 Rev. 1.7, 28-Jan-04
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BZG03C-Series
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Symbol Typ.
VISHAY
Unit
Electrical Characteristics
BZG03C. Partnumber Zener Voltage Range Dynamic Resistance Test Current 1000 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Temperature Coefficient Zener Voltage TKVZ@ 0.09 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 Reverse Leakage Current
BZG03C10 BZG03C11 BZG03C12 BZG03C13 BZG03C15 BZG03C16 BZG03C18 BZG03C20 BZG03C22 BZG03C24 BZG03C27 BZG03C30 BZG03C33 BZG03C36 BZG03C39 BZG03C43 BZG03C47 BZG03C51 BZG03C56 BZG03C62 BZG03C68 BZG03C75 BZG03C82 BZG03C91 BZG03C100 BZG03C110 BZG03C120 BZG03C130 BZG03C150 BZG03C160 BZG03C180 BZG03C200 BZG03C220 BZG03C240 BZG03C270 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9
TKVZ
www.vishay.com
Document Number 85593 Rev. 1.7, 28-Jan-04
VISHAY
Typical Characteristics (Tamb unless otherwise specified)
10.0
PZSM Non-Repetitive Surge Power Dissipation
BZG03C-Series
Vishay Semiconductors
10000
1000
25.0
9313
25.0
9582
0.01
Pulse Length
Figure Boards RthJA definition (copper overlay 35µ)
Figure Repetitive Surge Power Dissipation Pulse Length
Ptot -Total PowerDissipation(W
RthJA=25K/W RthJA=100K/W
9580
Tamb Ambient Temperature(°C
Figure Total Power Dissipation Ambient Temperature
Forward Current
9581
Forward Voltage
Figure Forward Current Forward Voltage
Document Number 85593 Rev. 1.7, 28-Jan-04
www.vishay.com
BZG03C-Series
Vishay Semiconductors
thp-Thermal Resistance Pulse Cond.(K/W
VISHAY
1000
tp/T=0.5 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 10-5 10-4 10-3 tp/T=0.01 10-2 10-1
9583
Pulse Length
Figure Thermal Response
DO-214AC Package Dimension Package Section
www.vishay.com
Document Number 85593 Rev. 1.7, 28-Jan-04
VISHAY
BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Glass passivated junction High reliability Stand-off Voltage range Excellent clamping cabability Fast response time (typ. from VZmin)
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC Weight: approx. Packaging Codes/Options: reel reel k/box
Absolute Maximum Rating
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