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Small-Signal Diodes Databook 2004
Vishay Semiconductor GmbH P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423 Web: www.vishay.com
Information contained this paper intended provide product description. Such description does constitute assured characteristics legal sense, those design hints provide information regarding delivery conditions availability. Vishay Semiconductor GmbH makes representation that interconnection circuits described herein will infringe existing future patent rights, descriptions contained herein imply granting licenses make, sell equipment constructed accordance therewith. information presented this paper believed accurate reliable. However, responsibility assumed Vishay Semiconductor GmbH use. Part publication reproduced without special permission condition that author source quoted that copies such extracts placed disposal after publication. Written permission should obtained from publisher complete reprints translations. reserve right amend information without prior notice, including issue letters patent. products listed this catalog generally recommended life support systems where failure malfunction component directly threaten life cause injury. user products such applications assumes risks such will agree hold Vishay Semiconductor GmbH companies whose products represented this catalog, harmless against damages. operating parameters including 'typicals' must validated each customer application customer's technical experts. Brand product names used this booklet trademarks registered trademarks their respective holders.
2004 Copyright Vishay Intertechnology, Inc. Registered Trademarks Vishay Intertechnology, Inc. rights reserved. Printed (Germany) Specifications subject change without notice. Please view latest data sheet editions under www.vishay.com.
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Vishay Semiconductors
Alphanumeric Index. Selector Guides. General Information. Conventions Used Presenting Technical Data Assembly Instructions. Physical Explanation. Taping Diodes. Quality Information. Reliability Constituents Semiconductor Components Marking Diodes. Datasheets. Packages Application Notes Power Ratings Heat Removal from Components Small Signal Diodes. Assembly Soldering Recommendations Glossary. Symbols
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Vishay Semiconductors
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Alphanumeric Index
Vishay Semiconductors
BAR63V-06 BAR63V-06W BAR64V-02V BAR64V-03 BAR64V-03W BAR64V-04 BAR64V-04W BAR64V-05 BAR64V-05W BAR64V-06 BAR64V-06W BAR65V-02V BAS16 BAS16D BAS16WS BAS170WS BAS19 BAS281 BAS285 BAS286 BAS31 BAS33 BAS34 BAS381 BAS385 BAS386 BAS40 BAS40-06 BAS40-02V BAS40-HT3 BAS40-06-HT3 BAS520-02V BAS581-02V BAS70 BAS70-06 BAS70-02V BAS70-HT3 BAS70-06-HT3 BAS81 BAS85 BAS86 BAT15V-02V BAT17 BAT17W BAT17WS BAT41 BAT42 BAT43 BAT42W BAT43W
Numerics
1N4148 1N4448 1N4148W 1N4148WS 1N4150 1N4150W 1N4151 1N4151W 1N4151WS 1N4154 1N4448W 1N5711 1N6263 1N914
BA1282 BA1283 BA282 BA283 BA479G BA479S BA604 BA679 BA679S BA682 BA683 BA779 BA779S BA779-2 BA782 BA783 BA782S BA783S BA892V-02V BA892V-04W BA979 BA979S BA980 BA982 BA983 BAL99 BAQ133 BAQ33 BAQ333 BAR63V-02V BAR63V-03 BAR63V-03W BAR63V-04 BAR63V-04W BAR63V-05 BAR63V-05W
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Alphanumeric Index
Vishay Semiconductors
BAT46 BAT46W BAT48 BAT54 BAT54-02V BAT54-HT3 BAT54S-HT3 BAT54W BAT54WS BAT81S BAT85 BAT85S BAT86 BAT86S BAV100 BAV17 BAV19W BAV19WS 20WS 21WS BAV200 BAV300 BAV70 BAV99 BAW27 BAW56 BAW75 BAW76 BAY135 BAY80 BB804 BB814 BB824
VISHAY
IMBD4148 IMBD4448
LL101A 101B 101C LL103A 103B 103C LL41 LL4148 LL4448 LL4150 LL4151 LL4154 LL42 LL43 LL46 LL48 LL5711 LL6263 LS101A 101B 101C LS103A 103B 103C LS4148 LS4448 LS4150 LS4151 LS4154 LS485S
MBR0520L MBR0530 MBR0540 MCL101A 101B 101C MCL103A 103B 103C MCL4148 MCL4448 MCL4151 MCL4154 MMBD6050
ES07B ES07D
GSD2004A GSD2004S GSD2004W GSD2004WS
MMBD7000 MMBD914
Packages
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Alphanumeric Index
Vishay Semiconductors
RS07B
S07B S391D S392D SD0230LWS SD0520 SD0520LS SD101A 101B 101C SD101AW 101BW 101CW SD101AWS 101BWS 101CWS SD103A 103B 103C SD103AW 103BW 103CW SD103AWS 103BWS 103CWS SD104AWS 104BWS 104CWS SD106WS SD107WS Selector Guide Small Signal Diodes SL02
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Alphanumeric Index
Vishay Semiconductors
VISHAY
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Selector Guides
General Information
Datasheets
Packages
Application Notes
Glossary
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Selector Guide Small Signal Diodes
Vishay Semiconductors
Selector Guides
Small-Signal Schottky Diodes
Part Number [mA] [mA] Ptot [mW] [ns] Page
SOD-123, Single Diode
BAT17W BAT42W BAT43W
sod123
0.32 0.385 0.43 0.51 0.41 0.39 0.37 0.37 0.37
BAT46W BAT54W MBR0520L MBR0530 MBR0540 SD101AW SD101BW SD101CW SD103AW SD103BW SD103CW
SOD-323, Single Diode
BAS170WS BAT17WS BAT54WS
sod323
0.32 0.35 0.41 0.40 0.39 0.37 0.37 0.37 0.58 0.565 0.55 0.55
SD0230LWS SD101AWS SD101BWS SD101CWS SD103AWS SD103BWS SD103CWS SD104AWS SD104BWS SD104CWS SD106WS SD107WS
SOD-523, Single Diode
BAS40-02V BAS70-02V BAS520-02V
sod523
0.38 0.41 0.32 0.32 0.32
BAS581-02V BAT54-02V
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Schottky Diodes (continued)
Part Number [mA] [mA] Ptot [mW]
VISHAY
[ns]
Page
LLP75-3B, Dual Common Anode
BAS70-06HT3 BAT54A-HT3 0.41 0.32
LLP75-3B, Dual Common Cathode
BAS70-05HT3 BAT54C-HT3 0.41 0.32
LLP75-3B, Dual Serial
BAS40-04HT3 BAS40-05HT3 BAS40-06HT3 BAS70-04HT3 BAT54S-HT3 0.38 0.38 0.38 0.41 0.32
LLP75-3B, Single Diode
BAS40-HT3 BAS70-HT3 BAT54-HT3 0.38 0.41 0.32
LLP75-3A, Single Diode
SD0520-HT3 0.385
SMF, Single Diode
SL02 SL03 SL04
1100 1100 1100
0.42 0.45 0.53
1100 1100 1100
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Schottky Diodes (continued)
Part Number [mA] [mA] Ptot [mW] [ns] Page
SOT-23, Dual Common Anode
BAS40-06 BAS70-06 BAT54A 0.38 0.41 0.32
SOT-23, Dual Common Cathode
BAS40-05 BAS70-05 BAT54C 0.38 0.41 0.32
SOT-23, Dual Serial
BAS40-04 BAS70-04 BAT17DS BAT54S SD0520LS 0.38 0.41 0.32
SOT-23, Single Diode
BAS40 BAS70 BAT17 BAT54 0.38 0.41 0.32
MicroMELF, Single Diode
BAS381 BAS382 BAS383
micromelf
0.41 0.41 0.41 0.45 0.41 0.39 0.37 0.37 0.37
BAS385 BAS386 MCL101A MCL101B MCL101C MCL103A MCL103B MCL103C
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Schottky Diodes (continued)
Part Number [mA] [mA] Ptot [mW]
VISHAY
[ns]
Page
MiniMELF SOD-80, Single Diode
BAS81 BAS82 BAS83
minimelf
0.41 0.41 0.41 0.45 0.45 0.45 0.45 0.41 0.39 0.37 0.37 0.37 0.41 0.41
BAS85 BAS86 LL41 LL42 LL43 LL46 LL48 LL101A LL101B LL101C LL103A LL103B LL103C LL5711 LL6263
QuadroMELF SOD-80, Single Diode
BAS281 BAS282 BAS283
quadromelf
0.41 0.41 0.41 0.45 0.41 0.39 0.37 0.37 0.37
BAS285 BAS286 LS101A LS101B LS101C LS103A LS103B LS103C
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Schottky Diodes (continued)
Part Number [mA] [mA] Ptot [mW] [ns] Page
DO-35, Single Diode
1N5711 1N6263 BAT41
do35
0.41 0.41 0.45 0.45 0.45 0.41 0.39 0.37 0.37 0.37
BAT42 BAT43 BAT46 BAT48 BAT81S BAT82S BAT83S BAT85 BAT85S BAT86 SD101A SD101B SD101C SD103A SD103B SD103C
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Selector Guide Small Signal Diodes
Vishay Semiconductors
VISHAY
Selector Guides
Small-Signal Switching Diodes
Part Number VRRM IFRM [mA] [µA] [mA] [ns] [mA] [mA] [mA] Page
SOD-123, Single Diode
1N4148W 1N4150W 1N4151W
sod123
0.05
1N4448W BAS16D BAV19W BAV20W BAV21W GSD2004W
SOD-323, Single Diode
1N4148WS 1N4151WS BAS16WS
sod323
0.05
BAV19WS BAV20WS BAV21WS GSD2004WS
SMF, Single Diode (AV)
ES07B ES07D RS07B
1000
500*) 500*) 500*) 500*)
1000
0.98 0.98 1.15 1.15 1.15 1.15
1000 1000 1000 1000 1000 1000 1000
1800 1800 1800 1800 1800
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
RS07D RS07G RS07J S07B S07D S07G S07J S07M
700*) 700*)
700*) 700*)
SOT-23, Dual Common Anode
BAW56 GSD2004A
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Switching Diodes (continued)
Part Number VRRM IFRM [mA] [µA] [mA] [ns] [mA] [mA] [mA] Page
SOT-23, Dual Common Cathode
BAV70
SOT-23, Dual Serial
BAS31 BAV99 GSD2004S MMBD7000
SOT-23, Single Diode
BAL99 BAS16 BAS19 BAS20 BAS21 IMBD4148 IMBD4448 MMBD914 MMBD6050
MicroMELF, Single Diode
BAQ333 BAQ334 BAQ335
micromelf
0.003 0.003 0.003 0.05
BAV300 BAV301 BAV302 BAV303 MCL4148 MCL4448 MCL4151 MCL4154
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Selector Guide Small Signal Diodes
Vishay Semiconductors
VISHAY
Small-Signal Switching Diodes (continued)
Part Number VRRM IFRM [mA] [µA] [mA] [ns] [mA] [mA] [mA] Page
MiniMELF SOD-80, Single Diode
BA604 BAQ33 BAQ34
minimelf
0.003 0.003 0.003 0.05
BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4448 LL4150 LL4151 LL4154
QuadroMELF SOD-80, Single Diode
BAQ133 BAQ134 BAQ135
quadromelf
0.003 0.003 0.003 0.05 0.025
BAV200 BAV201 BAV202 BAV203 LS4148 LS4448 LS4150 LS4151 LS4154 LS485S
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Selector Guide Small Signal Diodes
Vishay Semiconductors Small-Signal Switching Diodes (continued)
Part Number VRRM IFRM [mA] [µA] [mA] [ns] [mA] [mA] [mA] Page
DO-35, Single Diode
1N914 1N4148 1N4448
do35
0.05 0.003
1N4150 1N4151 1N4154 BAV17 BAV18 BAV19 BAV20 BAV21 BAS33 BAS34 BAW27 BAW75 BAW76 BAY80 BAY135
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Selector Guide Small Signal Diodes
Vishay Semiconductors
VISHAY
Selector Guides
Schottky Diodes
Part Number @100 [pF] Page
[mA]
[mA]
[mA]
SOD-523, Single Diode
BAT15V02V 0.32 0.35
sod523
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Selector Guide Small Signal Diodes
Vishay Semiconductors
Selector Guides
Band-Switching Diodes
Part Number [pF] [pF] [mA] [mA] Page
SOD-123, Single Diode
BA782 BA783 1.25
sod123
SOD-323, Single Diode
BA782S BA783S
sod323
1.25
SOD-523, Single Diode
BA892V02V 0.02
sod523
SOT-323, Single Diode
BA892V04W 0.02
MicroMELF, Single Diode
BA1282 BA1283 1.25
micromelf
MiniMELF SOD-80, Single Diode
BA682 BA683 1.25
minimelf
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Selector Guide Small Signal Diodes
Vishay Semiconductors Band-Switching Diodes (continued)
Part Number [pF] [pF] [mA]
VISHAY
[mA]
Page
QuadroMELF SOD-80, Single Diode
BA982 BA983 1.25
quadromelf
DO-35, Single Diode
BA282 BA283 1.25
do35
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Selector Guide Small Signal Diodes
Vishay Semiconductors
Selector Guides
Capacitance Diodes
Part Number VRRM CDmin CDmax [pF] Ratio (CD1 CD2) min/max [Ohm] Qmin [MHz] [pF] Page
SOT-23, Dual Diodes
BB804-0 BB804-1 BB804-2 BB804-3 BB804-4 BB814 BB814-1 BB814-2 BB824 BB824-2 BB824-3 43.5 44.5 45.5 46.5 47.5 44.5 42.5 45.0 42.3 43.0 43.7 45.0 1.65 1.75 1.65 1.75 1.65 1.75 1.65 1.75 1.65 1.75 2.05 2.25 2.05 2.25 2.05 2.25 2.25 2.45 2.25 2.45 2.25 2.45
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Selector Guide Small Signal Diodes
Vishay Semiconductors
VISHAY
Selector Guides
Diodes
Part Number [mA] [mA] [µA] [pF] [MHz [mA] [MHz Page
SOD-523, Single Diode
BAR63V-02V BAR64V-02V BAR65V-02V
sod523
0.01 0.05 0.02
0.35
SOT-23, Dual Diodes
BA779-2 S392D 0.05 0.05
SOT-23, Single Diode
BA779 BA779S BAR63V-03 BAR63V-04 BAR63V-05 BAR63V-06 BAR64V-03 BAR64V-04 BAR64V-05 BAR64V-06 0.05 0.05 0.01 0.01 0.01 0.01 0.05 0.05 0.05 0.05 0.35 0.35 0.35 0.35
SOT-323, Single Diode
BAR63V03W BAR63V04W BAR63V05W BAR63V06W BAR64V03W BAR64V04W BAR64V05W BAR64V06W 0.01 0.01 0.01 0.01 0.05 0.05 0.05 0.05 0.35 0.35 0.35 0.35
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Selector Guide Small Signal Diodes
Vishay Semiconductors Diodes (continued)
Part Number [mA] [mA] [µA] [pF] [MHz [mA] [MHz Page
MiniMELF SOD-80, Single Diode
BA679 BA679S S391D
minimelf
0.05 0.05 0.05
QuadroMELF SOD-80, Single Diode
BA979 BA979S BA980
quadromelf
0.05 0.05 0.05
DO-35, Single Diode
BA479G BA479S 0.05 0.05
do35
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Selector Guide Small Signal Diodes
Vishay Semiconductors
VISHAY
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Selector Guides
General Information
Datasheets
Packages
Application Notes
Glossary
VISHAY
Vishay Semiconductors
Conventions Used Presenting Technical Data
Nomenclature Semiconductor Devices According Electron
part number semiconductor device consists letters followed serial number. example:
Material
Function
Serial number
18966
first letter indicates material used active part device. GERMANIUM (Materials with bandgap 0.6-1.0 SILICON (Materials with bandgap 1.0-1.3 GALLIUM-ARSENIDE (Materials with bandgap COMPOUND MATERIALS (For example Cadmium-Sulfide) second letter indicates circuit function. DIODE: detection, switching mixer DIODE: variable capacitance TRANSISTOR: power, audio frequency TRANSISTOR: power, audio frequency DIODE: tunnel TRANSISTOR: power, high frequency DIODE: oscillator miscellaneous DIODE: magnetic sensitive HALL EFFECT DEVICE: open magnetic circuit TRANSISTOR: power, high frequency
HALL EFFECT DEVICE: closed magnetic circuit PHOTO COUPLER DIODE: radiation sensitive DIODE: radiation generating THYRISTOR: power TRANSISTOR: power, switching THYRISTOR: power TRANSISTOR: power, switching DIODE: multiplier, e.g., Varicap, step recovery DIODE: rectifying, booster DIODE: voltage reference voltage regulator, transient suppressor diode serial number consists four digit number from 9999 devices primarily intended consumer equipment. letter etc.) three-digit number from devices primarily intended professional equipment. version letter used indicate deviation single characteristic, either electrical mechanical. This letter does have fixed meaning. only exception letter indicating reversed voltage (e.g., collector case).
materials mentioned examples
Document Number 85838 Rev. 1.2, 14-May-04
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Vishay Semiconductors Polarity Conventions
voltage direction given arrow which points from measuring point reference point letter subscript, where first letter measuring point second letter reference point. general rules stated above also valid alternating quantities. Once direction selected, maintained throughout. alternating character quantity given with time-dependent change sign numerical values. Polarity conventions diodes Here, direction arrows selected such that numerical values currents voltages positive both forward reverse directions.
-VAB
9315
Figure
9317
numerical value voltage positive potential arrow tail higher than arrow head; i.e., potential difference from measuring point reference point positive. numerical value voltage negative potential arrow head higher than tail; i.e., potential difference from measuring point reference point negative. case alternating voltages, once voltage direction selected, maintained throughout. alternating character quantity given with time dependent change sign numerical values.
Figure
9316
Figure
numerical value current positive charge carriers moving direction arrow positive (conventional current direction), charge carriers moving against this direction negative. numerical value current negative, charge carriers moving direction arrow negative, charge carriers moving against this direction positive.
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Vishay Semiconductors
Assembly Instructions
General
Semiconductor devices mounted position. terminal length bent distance greater than from case provided mechanical force effect case. device mounted near heat generating components, consideration must given resultant increase ambient temperature. sible, soldered only, that heat generated quickly conducted away. time during which specified maximum permissible device junction temperature exceeded during soldering operation should short possible, (i.e., silicon, seconds. Avoid force body leads during just after soldering. correct position already soldered device pushing, pulling twisting body. Prevent fast cooling after soldering. maximum soldering temperatures shown table
Flow Soldering Maximum Allowable Soldering Time Soldering Temperature Soldering Distance from Case Maximum Allowable Soldering Time
Soldering Instructions
Leaded Devices Protection against overheating essential when device being soldered. recommended, therefore, that connection terminals left long posIron Soldering Iron Temperature Soldering Distance from Case
Vertical Glass case Plastic case DIN41869 (SOT23)
Horizontal
Table Maximum soldering temperatures
Surface Mounted Devices Surface mounted devices (SMD) components which mounted directly surface printed circuit board without having drill holes. addition, these components completely submerged solder bath (overhead soldering). technology offers following main advantages: Higher packing density (miniaturization) Reduction component mounting costs fully automatic mounting Gluing case flow drag soldering, components must glued printed circuit board. adhesive used this purpose must electrically neutral must react chemically with materials printed circuit board components. adhesive must negatively affect subsequent soldering. After mounting, adhesive must hardened. ultraviolet and/or thermal radiation commonly used hardening uncritical
Document Number 84083 Rev. 1.2, 14-May-04
components. case other soldering methods, gluing omitted flux solder paste provides sufficient adhesion components printed circuit board. Soldering pins Vishay components already tinned. soldering, flow soldering, reflow soldering, vapor phase soldering permissible. maximum temperature over period must exceeded during soldering. aggressive fluxes used. soldering iron should used only exceptional cases (repairs, etc.). temperature regulated miniature soldering iron must used, care should taken avoid touching component with soldering iron. optoelectronic semiconductor components, maximum soldering temperature
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Vishay Semiconductors
Cooling Cooling components with after soldering permissible. Cleaning cleaning necessary after soldering, recommended wash with water which contains detergent free deposits. Important layout notes components arranged rows, then separate soldering surfaces must provided each component. this carried out, block solder forms between components during soldering, rigid connection result. This cause breakage cracks component result slightest bending board, thus lead failures. necessary solder wire (standard conductor, etc.) board, separate soldering surface must provided order avoid excessive heating components during soldering with soldering iron. where Tjmax maximum junction temperature, Tamb highest ambient temperature likely reached under most unfavorable conditions, RthJA thermal resistance between junction ambient. diodes with axial leads, measured with heat sink specified distance from case, RthJC thermal resistance between junction case, RthCA thermal resistance between case ambient. value cooling dependent. When using heat sink, influenced through thermal contact between case heat sink, thermal distribution heat sink heat transfer surroundings. Therefore, maximum permissible total power dissipation given semiconductor device influenced only changing Tamb RthCA. value RthCA obtained either from data heat sink suppliers through direct measurements. Heat energy losses mainly conducted with power diodes without cooling pins through connecting leads hence board. Figure shows thermal resistance plotted function edge length. values valid with heat source middle plate, resting vertical position. With horizontal position, thermal resistance increases approximately
-Thermal Resistance(
9474
Heat Removal
keep thermal equilibrium, heat generated semiconductor junction(s) must removed. case low-power devices, natural heat conductive path between case surrounding usually adequate this purpose. However, case medium-power devices, heat radiation have improved star- flag-shaped heat dissipaters, which increase heat radiating surface. Finally, case high-power devices, special heat sinks must provided, cooling effect which increased further special coolants blowers. heat generated junction conveyed case header conduction rather than convection. measure effectiveness heat conduction inner thermal resistance thermal resistance junction case, RthJC, value which governed construction device. heat transfer from case surrounding involves radiation convection conduction. effectiveness transfer expressed terms RthCA-value, i.e., external case-ambient thermal resistance. total thermal resistance between junction ambient consequently RthJA RthJC RthCA. total maximum power, Ptot max' semiconductor device expressed follows jmax thJA thJA thCA
Length
Figure
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Document Number 84083 Rev. 1.2, 14-May-04
VISHAY
Vishay Semiconductors
Pertinax boards thick Pertinax non-metallized Pertinax with copper metallization side; heat source fitted non-metallized side Pertinax with copper metallization side; heat source fitted non-metallized side Pertinax with copper metallization side; heat source fitted metallized side Pertinax with copper metallization both sides Pertinax with copper metallization side; heat source fitted metallized side Pertinax with copper metallization both sides Rtha: Thermal resistance boards Edge length When using cooling plates heat sinks without optimum performance, following approach acceptable. curves shown figures given thermal resistance, RthCA, using square plates aluminium with edge length with different thicknesses. device case should mounted directly cooling plate. edge length derived from figures given RthCA value must multiplied with where 1.00 vertical arrangement 1.15 horizontal arrangement 1.00 bright surface 0.85 dull black surface
K/W)
10°C
thCA
7834
Plate thickness
Figure
1000
K/W)
thCA
7835
Plate thickness
Figure
1000
Document Number 84083 Rev. 1.2, 14-May-04
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Vishay Semiconductors
Physical Explanation
General Terminology Semiconductor diodes used rectifiers, switchers, Varicaps voltage stabilizers (see chapter `Voltage Regulator Z-diodes'). Semiconductor diodes two-terminal solid-state devices having asymmetrical voltage-current characteristics. Unless otherwise stated, this means device single pn-junction corresponding characteristics shown figure Parallel resistance, Diode resistance resulting from rectification which acts damping resistance pre-tuned demodulation circuit. Diode capacitance, Total capacitance between diode terminals case, junction parasitic capacitances. Breakdown voltage, V(BR) Reverse voltage which small increase voltage results sharp rise reverse current. given technical data sheet specified current. Forward voltage, voltage across diode terminals which results from flow current forward direction. Forward current, current flowing through diode direction lower resistance. Forward resistance, quotient forward voltage across diode corresponding forward current. Forward resistance, differential differential resistance measured between terminals diode under specified conditions measurement, i.e., small-signal voltages currents point forward direction characteristic. Case capacitance, Ccase Capacitance case without semiconductor crystal. Integration time, With certain limitations, absolute maximum ratings given technical data sheets exceeded short time. mean value current voltage decisive over specified time interval termed integration time. These mean values over time interval, tav, should exceed absolute maximum ratings. Average rectified output current, IFAV average value forward current when using diode rectifier. maximum allowable average rectified output current depends peak value applied reverse voltage during time interval which current flowing. absolute maximum ratings, both following given: maximum permissible average rectified output current zero diode voltage (reverse)
9321
Figure
application voltage current curve given where saturation current temperature potential diode forward-biased (anode positive with respect cathode), forward current increases rapidly with increasing voltage. That resistance becomes very low. diode reverse-biased (anode negative with respect cathode), reverse current extremely low. This only valid until breakdown voltage V(BR) been reached. When reverse voltage slightly higher than breakdown voltage, sharp rise reverse current results. Bulk resistance Resistance bulk material between junction diode terminals.
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Document Number 84053 Rev. 1.2, 20-Jan-04
VISHAY
Vishay Semiconductors
maximum permissible average rectified output current maximum value URRM during time interval which current flowing. Note: IFAV decreases with increasing value reverse voltage during interval current flow. Rectification efficiency, ratio load voltage peak input voltage rectifier. Reverse recovery time, time required current reach specified reverse current, after instantaneous switching from specified forward condition (IF) specified reverse bias condition (IR).
Reverse resistance, differential, differential resistance measured between terminals diode under specified condition measurement i.e., small-signal (ac) voltage currents point reverse-voltage direction characteristic. Peak forward current, IFRM maximum forward current with sine-wave operation, pulse operation, having duty cycle tP/T 0.5. Peak reverse voltage, VRRM maximum reverse voltage having operating frequency sine-wave well pulse operation. Peak surge forward current, IFSM maximum permissible surge current forward direction having specified waveform with short specified time interval unless otherwise specified. operating value. During frequent repetitions, there possibility change device's characteristic. Peak surge reverse voltage, VRSM maximum permissible surge voltage applied reverse direction. operating value. During frequent repetitions, there possibility change device's characteristic.
9322
Figure
Series resistance, total value resistance representing bulk, contact lead resistance diode given equivalent circuit diagram variable Varicaps. Junction capacitance, Capacitance junction diode which decreases with increasing reverse voltage. Reverse voltage, voltage drop which results from flow reverse current (through semiconductor diode). Reverse current, (leakage current) current which flows when reverse bias applied semiconductor junction. Reverse resistance, quotient reverse voltage across diode corresponding reverse current.
Power dissipation, electrical power converted into heat. Unless otherwise specified, this value given data sheets under absolute maximum ratings, with Tamb specified distance from case (both ends). Forward recovery time, time required voltage reach specified value after instantaneous switching from zero specified reverse voltage specified forward biased condition. This recovery time especially noticeable when higher currents switched within short time. reason that forward resistance during turn-on time could higher than current (inductive behavior). This result destruction diode because high instantaneous power loss constant current control used.
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This value inherent (rz) thermal differential (rzj) resistances. rzth Inherent differential resistance, rzj, breakdown region This value part total differential resistance Z-diode breakdown region. responsible short-time load change constant junction temperature.
9323
constant valid case where frequency load changes high that junction temperature does change. Thermal differential resistance, rzth, breakdown region thermal differential resistance result thermal characteristics diode. This should considered together with inherent differential resistance, rzj. constant thJA Measuring current, value given technical data serves measuring condition operating voltage, inherent differential resistance, rzj, temperature coefficient operating voltage, TKVZ. Temperature coefficient, TKVZ This characteristic gives temperature dependence operating voltage specified operating current such unit measurement used either 10-4/ Z-voltage, operating working voltage Z-current, operating working current Z-resistance, differential resistance
Figure
Voltage Regulator Diodes Z-diodes
voltage regulator diode diode which develops essentially constant voltage across terminals throughout specified current range. Special reverse-biased diodes known Z-diodes certain forward-biased silicon diodes used voltage regulator diodes. Z-diodes silicon diodes which result from specified applied reverse voltage onward rapid increase reverse current avalanche Z-breakdown voltage. These diodes operated permanently this breakdown region. sharp rise reverse current corresponding breakdown voltage nearly constant. Z-diodes used voltages above lower operating voltages needed, above mentioned forward-biased silicon diodes used. Operating working voltage, breakdown region, Voltage across terminals Z-diode specified value reverse current breakdown region. Operating working current breakdown region, Reverse current flowing allowable area breakdown region Z-diode. Differential resistance breakdown region, Differential quotient between operating voltage operating current specified working current.
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Vishay Semiconductors Varicap Diodes
Varicap diodes used different circuits, such tuning, AFC, frequency multiplier, modulation, couple element filters with controlled bandwidth, parametric amplification, switching VHF- microwave regions, etc. these applications, basic variation junction capacitance with reverse voltage been investigated. simplified equivalent circuit encapsulated Varicap diode shown figure
Ccas
Figure
0.5-abrupt junction, planar epitaxial technology 0.75-diode with retrograded junction Retrograded junction diodes 0.75) capable very large capacitance deviation therefore suitable tuning with large frequency range (i.e., BB205 VHF). these diodes, function reverse voltage, i.e., f(VR). quality, Varicap important factor calculated follows: series resistance, decreases with increasing applied bias. also frequency dependent. non-linearity capacitance characteristic results signal distortion deformation ratio signal amplitude applied bias. push-pull arrangements further minimize distortion even with larger range signal. Because signal modulates diode counter phase, capacitance changes. diode almost compensated. temperature coefficient junction capacitance approximately 10-4/°C with result change mV/°C diffusion voltage, temperature coefficient junction capacitance decreases with increasing reverse voltage. junction resistance, decreases series resistance, decreases approximately with increase junction temperature 1°C.
9325
Ccase Case capacitance Junction capacitance Series resistance Series inductance Junction resistance case silicon (Varicap) diodes, junction resistance, very high zero negative (reverse) bias. high resonant frequency, Ccase neglected equivalent circuit shown figure
Diodes
9326
Figure
Junction capacitance calculated follows: Junction capacitance zero bias Diffusion voltage, silicon exponent different values according technology used, such 0.33-diffused diode with linear technology
stands p-intrinsic-n. this type diode, heavily doped region heavily doped region separated layer high resistivity material which nearly intrinsic (I), shown figure Under reverse bias, diode very high impedance microwave frequencies), whereas moderate forward current very impedance. This permits diode low-loss switch with small self capacitance. resistance diode varied continuously from large small values changing diode bias. diode therefore used more advantageously attenuator -circuit. Typical examples are: VHF-band switch diode BA282, BA682 attenuator diode BA479G BA679.
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Vishay Semiconductors
Ccas
9327
Figure
Width I-Zone Space charge carrier area Total series inductance Total resistance layers resistance associated with contacts these Layers represent resistance capacitance portion I-layer exclusive swept-out region.
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Vishay Semiconductors
Taping Diodes
Axial Lead Components
Diodes rectifiers with axial leads normally delivered taped form according 286-1 (see figure cathode side designated colored tape. Taped devices normally delivered ammoboxes (Ammopack). Delivery reels available request.
Package tape reel Quantity Reel DO-35
Diodes DO-35 packages also available with tapewidth radial taped. details please contact factory. Quantities dimensions
Available Packaging tape reel Quantity Reel 10.000 Ammo Pack Quantity 10.000
Taping Specifications DO-35 Package
Description Component Pitch Devices with diameter Component Pitch Devices with diameter Inside Tape Spacing Lead Lead Eccentricity Lead Extension Lead Bending Cumulative Pitch Exposed Adhesive Tape Width Tape Leader Empty Spaces Polarity Marking Symbol ID1-D2I Beginning reel ammo pack. Consecutive missing components allowed polarized components shall oriented same direction. cathode tape shall colored, anode tape shall white light beige. Specification (mm) pitch 300.0
Allowable deviation above taped steps
(0.031) max. (0.055) max.
(0.031) max.
(0.236 0.0157) Dimensions apply both sides
15802
Figure
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Ammopack Specification DO-35 Package
Description Length Width Height Symbol Specification Inches 10.25 2.75 5.75 0.65 Millimeters 16.0 Arbor Hole Diameter Core Diameter Reel Diameter Drive Hole Diameter Reel Width Drive Arbor Hole Spacing Core Material
15800
Reel Specification DO-35 Package
Description Symbol Reel Size 14`` Carton Carton
Material: corrugated board (neutral)
Reel Material
Inspection hole (both sides)
Figure
19016
Figure
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Document Number 84057 Rev. 1.2, 01-Jun-04
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Vishay Semiconductors Tape Reel Surface-Mounted Devices (SMDs)
SMDs normally delivered taped blister tape reeled according 286-3. mounting side component oriented bottom side tape. components with terminations, cathode side oriented sprocket hole. components SOT-23 package, side from which single termination emerges oriented sprocket hole. Components delivered either reels. quantities reel, below.
Case Type Suffix Quantity Reel Size (Diameter) Tape Width
DO-214AC LLP75-3A LLP75-3B MicroMELF MiniMELF SOD-80 QuadroMELF SOD-80 (DO-219AB) SO-8 SOD-123 SOD-323 SOD-523 SOT-23 SOT-323 SOT-490
GS08 GS18 GS08 GS18 GS08 GS18 GS08 SG18 GS08 GS18 GS18 GS08 GS18 GS08 GS18 GS08 GS08 GS18 GS08 GS18 GS08
1500 6000 3000 10000 3000 10000 2500 10000 2500 10000 2500 10000 3000 10000 2500 3000 10000 3000 10000 3000 3000 10000 3000 10000 3000
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De-reeling direction
5.75 5.25
1.85 1.65
959662
2.05 1.95
0.3max
technical drawings according specifications
Figure
Packages Devices MiniMELF, SOD-80 MicroMELF, SOD-80 QuadroMELF, SOD-123, SOD-323, SOT-23, SOT-323
Dimensions (mm) max. 10.4
0.05
120° GS08: GS18:
12.9 12.6 63.5 60.5
Identification Label Vishay Type Group Tape Code Production Code Quantity
Figure
9155
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Missing devices maximum total number components reel missing exclusively beginning reel. maximum three consecutive components missing, provided this followed consecutive components (see figure
De-reeling direction
8158
Labelling
empty compartments min. empty compartments
Tape leader
Carrier leader
Carrier trailer
18916
Figure
Figure Labelling taping reel
18917
Figure Labelling carton
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Vishay Semiconductors
Quality Information
Vishay Semiconductors' Continuous Improvement Activities
Quality training personnel including production, development, marketing sales departments Zero defect mindset Permanent quality improvement process Total Quality Management (TQM) Vishay Semiconductors' Quality Policy established Management Board Quality system certified 9001: 2000 Quality system certified ISO/TS 16949: 2002 Environmental System certified ISO14001 Work Safety system certified OHSAS18001 Vishay Semiconductors' Tools Continuous Improvement Vishay Semiconductors follows Rules EFQM Quality Management system Vishay Semiconductors qualifies materials, processes process changes Vishay Semiconductors uses Process FMEA (Failure Mode Effects Analysis) processes. Process machine capability well Gauge (Repeatability Reproducibility) proven Vishay Semiconductors internal qualifications correspond IEC68-2, AEC-Q101 Vishay Semiconductors periodically requalifies device types (Long Term Monitoring). Vishay Semiconductors uses significant production parameters. performed trained operators. Vishay Semiconductors' testing final products. Vishay Semiconductors' release carried sampling. Sampling acceptance criterion always
16966
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Document Number 84054 Rev. 1.2, 01-Jun-04
VISHAY
Vishay Semiconductors Create First-Class Quality, On-Time Delivery, Satisfy Customers' Requirements
18587 18586
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 14001 1996
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 16949 2002
18771
18592
Figure Vishay Semiconductor Ges.m.b.H, A-Voecklabruck 9001 2000
Figure Shanghai Vishay Semiconductor Co., Ltd., China 14001 1996
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18772 19018
Figure Shanghai Vishay Semiconductor Co., Ltd., China ISO/TS 16949 2002
Figure Vishay Semiconductor GmbH, D-Heilbronn 16949 2002
19017
18812
Figure Vishay Semiconductor GmbH, D-Heilbronn 14001 1996
Figure Vishay General Semiconductor GmbH, D-Freiburg 9001 2000
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18811
18788
Figure Vishay General Semiconductor GmbH, D-Freiburg 9000 1998
Figure Vishay General Semiconductor S.A.S, F-Colmar 14001 1996
18793
18814
Figure Vishay General Semiconductor GmbH, D-Freiburg 14001 1996
Figure Vishay General Semiconductor S.A.S, F-Colmar 9001 2000
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Vishay Semiconductors
18813
18773
Figure Vishay General Semiconductor S.A.S, F-Colmar 9000 1998
Figure Vishay Hungary Ltd., H-Budapest, 14001 1997
18775 18774
Figure Vishay Hungary Electronics CO., H-Budapest ISO/TS 16949 2002
Figure Vishay Hungary Electronics CO., ISO/TS 16949 2002
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Document Number 84054 Rev. 1.2, 01-Jun-04
VISHAY
Vishay Semiconductors General Quality Flow Chart
Development
Material
Qualification
Incoming inspection
Production
Wafer processing
Quality control
Assembly
Quality control
100% Final test
release sampling Acceptance criterion
Quality control
Monitoring
Statistical Process Control Average Outgoing Quality
Stock/ customer
11464
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Vishay Semiconductors Vishay Quality Road
Business excellence
Integrated Management System
2005
ISO/TS 16949 14001 Locations
VDA; Locations OHSAS18001
2000
14001 9000
Customer Satisfaction Measurement EFQM Approach
1995
Environmental Certification acc. (EMAS) 9001 Certification
18667
1990
Education Training
Qualification Release
3000
16946
Wafer process qualification
Package qualification
Device type qualification
Monitoring
Qualification process changes
Figure Structure 3000
wafer processes, packages device types qualified according internal Vishay Semiconductors specification 3000. 3000 consists five parts (see Figure 15). Wafer process release: wafer process release fundamental release qualification various technologies used Vishay Semiconductors. Leading device types defined various technologies. Three wafer lots these types subjected extensive qualificawww.vishay.com
tion procedure used represent this technology. positive result will lead release technology. Package release: package release fundamental release qualification different packages used. Package groups defined. Critical packages selected: assembly lots subjected qualification procedure represented. positive result will release similar packages.
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Device type release: device type released release individual designs. Monitoring: Monitoring serves both continuous monitoring production source data calculation early failures (early failure rate: EFR). Product process changes released (Engineering Change Note). This includes proving process capability meeting quality requirements. Test procedures utilized 68-2-. MIL-STD-750 respectively. process-FMEA performed processes (FMEA Failure Mode Effect Analysis). addition, design- product-FMEA used critical products meet agreed customer requirements. Design Experiments (DOE) tool statistical design experiments used optimization processes. Systems (processes, products procedures) analyzed optimized using designed experiments. significant advantage compared conventional methods efficient performance experiments with minimum effort determining most important inputs optimizing system. part continuous improvement process, Vishay employees trained thinking using statistical methods procedures.
Statistical Methods Prevention
manufacture high-quality products, sufficient inspect product production process. Quality 'designed-in' during process product development. addition that, 'designing-in' must also ensured during production flow. Both will achieved means appropriate measurements tools. Statistical Process Control (SPC) R&R- (Repeatability Reproducibility) tests Up-Time Control (UTC) Failure Mode Effect Analysis (FMEA) Design Experiments (DOE) Quality Function Deployment (QFD) Vishay been using tool production since 1990/91. using SPC, deviations from process control goals quickly established. This allows control processes before process parameters specified limits. assure control processes, each process step observed supervised trained personnel. Results documented. Process capabilities measured expressed process capability index (Cpk). Validation process capability required processes before they released production. Before using equipment gauges production, machine capability (Cmk machine capability index) (Repeatability Reproducibility) used validate equipment's fitness use. Up-Time recorded Up-Time Control (UTC) system. This data determines intervals preventive maintenance, which basis maintenance plan.
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Reliability
requirements concerning quality reliability products always increasing. sufficient only deliver fault-free parts. addition, must ensured that delivered goods serve their purpose safely failure free, i.e. reliably. From delivery device final product, there some occasions where device final product fail despite testing outgoing inspection. principle, this sequence valid components product. these reasons, negative consequences failure, which become more serious expensive later they occur, obvious. manufacturer therefore interested supplying products with lowest possible (Average Outgoing Quality) value (Early Failure Rate) value (Long-term Failure Rate) value tional life derived. usage life time normally period constant failure rate. failures occuring during this period random. Within this period failure rate failures Quantity Time failure hours measure (Failures Time number failures device hours). Example sample semiconductor devices tested operating life test (dynamic electric operation). devices operate period 10,000 hours. Failures: failure after 1000 failure after 2000 failure rate calculated from this sample 1000 2000 10000
4.01 -4983000
Average Outgoing Quality (AOQ)
outgoing products sampled after testing. This known "Average Outgoing Quality" (AOQ). results this inspection recorded (parts million) using method defined JEDEC
Early Failure Rate (EFR)
estimate ppm) number early failures related number devices used. Early failures normally those which occur within first 1000 hours. Essentially, this period time covers guarantee period finished unit. values therefore very important device user. early life failure rate heavily influenced complexity. Consequently, 'designing-in' better quality during development design phase, well optimized process control during manufacturing, significantly reduces value. Normally, early failure rate should significantly higher than random failure rate. given (parts million).
This -value FIT, this sample failure rate 0.04 1000 average.
Early Failures Operating Period Wear Failures
11401
Long-Term Failure Rate (LFR)
shows failure rate during operational period devices. This period particular interest manufacturer final product. Based value, estimations concerning long-term failure rate, reliability device's module's operaFigure Bath curve
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Document Number 84080 Rev. 1.2, 20-Jan-04
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Vishay Semiconductors Confidence Level
failure rate calculated from sample estimate unknown failure rate lot. interval failure rate (confidence interval) calculated, depending confidence level sample size. following valid: larger sample size, narrower confidence interval. lower confidence level statement, narrower confidence interval. confidence level applicable failure rate whole when using estimated value derived from x2-distribution. practice, only upper limit confidence interval (the maximum average failure rate) used. Therefore:
Number Failures 0.60 1.68 2.67 3.67 4.67 5.67 6.67 7.67 8.67 9.67 10.67 Confidence Level 0.93 2.00 3.08 4.17 5.24 6.25 7.27 8.33 9.35 10.42 11.42 Table 2.31 3.89 5.30 6.70 8.00 9.25 10.55 11.75 13.00 14.20 15.40 2.96 4.67 6.21 7.69 10.42 11.76 13.16 14.30 15.63 16.95
Operating Life Tests
Number devices tested: Number failures: (positive qualification): Test time: 2000 hours Confidence level: x2/2 0.93
0,93 2000 This means, that failure rate does exceed 0.93 1000 (9300 FIT) with probability This example demonstrates that only possible verify values 9300 with confidence level normal qualification test devices, 2000 obtain values which meet today's requirements FIT), following conditions have fulfilled: Very long test periods Large quantities devices Accelerated testing (e.g. higher temperature)
[FIT] Number failures Confidence level Sample size Time hours Device hours x2/2 taken from Table1. above example from Table1: x2/2 3.08 4983000
3,08 4983000 This means that failure rate does exceed 0.0618 1000 (618 FIT) with probability confidence level chosen from table x2/2
4983000 This means that failure rate does exceed 0.106 1000 (1060 FIT) with probability 1,06
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Vishay Semiconductors Mean Time Failure (MTTF)
systems which repaired whose devices must changed, e.g. semiconductors, following valid: MTTF MTTF average fault-free operating period monitored (time) unit. Accelerating Stress Tests Innovation cycles field semiconductors becoming shorter shorter. This means that products must brought market quicker. same time, expectations concerning quality reliability products have become higher. Manufacturers semiconductors must therefore assure long operating periods with high reliability short time. Sample stress testing most commonly used assuring this. rule Arrhenius describes this temperaturedependent change failure rate.
Example following conditions apply operating life stress test: Environmental temperature during stress test Power dissipation device Thermal resistance junction/environment RthJA system temperature junction temperature results from: RthJA Operation field ambient temperature average power dissipation utilized. This results junction temperature operation activation energy used opto components resulting acceleration factor
347K 373K
373K 347K
Boltzmann's constant 8.63 10-5 eV/K Activation energy Junction temperature real operation Kelvin Junction temperature stress test Kelvin Failure rate real operation (T1) Failure rate stress test (T2) acceleration factor described exponential function being:
This signifies that, this example, failure rate lower factor compared stress test. Other accelerating stress tests Humidity (except displays type TDS.) Temperature cycling Temperature interval specified tests carried according requirements appropriate IEC-standards (see also chapter 'Qualification Release').
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Vishay Semiconductors Activation Energy
There some conditions which need fulfilled order Arrhenius' method: validity Arrhenius' rule verified. 'Failure-specific' activation energies must determined. These conditions verified series tests. Today, this procedure generally accepted used basis estimating operating life. values activation energies determined experiments different failure mechanisms. Values often used different device groups are: Opto components Bipolar Transistors Diodes Sinterglass Diodes using this method, possible provide longterm predictions actual operation semiconductors even with relatively short test periods.
Acceleration factor
1000
11369
Junction Temperature(°C)
Figure Acceleration factor different activation energies normalized
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Constituents Semiconductor Components
Responsible electronic component equipment manufacturers already preparing time when lifespan their products comes scrutinizing materials incorporated their future recylcability. Recycling laws have already come into force Germany ("Kreislauf-Wirtschaftsgesetz") guidelines electronic scrap preparation. suitable waste disposal program preventative measure reduction content hazardous damaging materials such components. order conform this procedure, detailed information about materials their quantities needed. This present overview answers questions forward customers constituents their function most important Vishay Semiconductor's semiconductor products. Special significance given so-called "Hazardous Substances". demonstrates that Vishay Semiconductor products under normal operating conditions expose applier environment hazard. However, most products nevertheless contain small necessary quantities "Hazardous Substances" which treated correctly through accidents released small scale into environment. present information produced with greatest possible care. suggestions improvement this brochure welcome. (known dioxin) ppb. lists themselves, details content composition separated into individual parts semiconductor component. most important these are: Active element: active element either silicon chip optoelectronic components chip containing combinations (Al) (As, These doped with very small amounts boron, arsenic, phosphorus, zinc germanium etc. metallization consists thin layers aluminium, gold titanium. chips generally bonded lead frame with silver epoxy have gold aluminium wires bonded lead frame. Lead frame: electrical connection, metal lead frame made from alloys such FeNi (42) CuFe partly totally plated with silver commonly used. metal alloys contain traces silver, zinc phosphorus. Case: semiconductor chip protected from environment case glass, plastic metal. glass composed oxides silicon lead together with boron aluminium. Plastic cases composed epoxy resin filled with weight quartz particles. Antimony trioxide brominated epoxy resin TBA) added flame retardants. Antimony bromine amount about respectively. use: use, content hazardous substances which importance. Germany, there series lists which give materials which potentially hazardous people environment, example: Appendix "Hazardous Materials Regulations", TRGS ("MAK-Wert-Liste") "Catalog Materials Hazardous Water Supply". These lists, however, only partially consistent. names used often different materials with same chemical composition. Furthermore, trivial trade names often adds fusion. Vishay Semiconductor therefore their descriptions that proposed Zentralverband Elektrotechnik Elektronikindustrie e.V. (ZVEI; Central Asso-
Definitions
Vishay Semiconductor offers wide range semiconductor components including transistors, diodes opto-electronic components. These have been manufactured various standard packages. following pages, these packages listed together with their materials shown weight percentages. order limit number tables, components whose structure composition same have been compiled families. many cases, different lead frames together with chips different sizes used package. This usually means that there slight differences quantities declared material. weight percent however, valid representative sample relevant family. order sensibly reduce number quantities materials contained respective components, quantities smaller than weight have been stated following list traces. This case unless lower limits forced law, e.g., cadmium PCDD well PCDF
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Document Number 84051 Rev. 1.2, 06-May-04
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Vishay Semiconductors
ciation Electrical Engineering Electronic Industry) harmonization nomenclature hazardous substances. Statements made safety precautions used during storage disposal mechanical, chemical thermal means more important chemicals (so-called "Leitchemikalien"). These listed tables order their potential risk. Their effect upon people environment also listed special precautions emphasized. Notes: following information been prepared exact reliable possible. manufacture semiconductor components however, subject regular change without special notification. publication this brochure excludes responsibility resulting from use.
Ozone Depleting Substances
Ozone Depleting Substances been totally eliminated Vishay Semiconductor doing meets legal requirements defined following documents. "Montreal Protocol" together with "London Amendments" Appendix "List Transitional Substances" "Clean Act", Amendments 1990, "Environmental Protection Agency" (EPA), USA, Class Ozone Depleting Substances "European Council Resolution" number 540/EEC 91/690/eec Appendix (Transitional Substances) Vishay Semiconductor guarantees that components contain manufactured without Ozone Depleting Substances.
Explanation Abbreviations
While information weight percent believed correct, discrepancies depending upon component type possible. Material information etc. Material listed "Material Hazardous Production" Trace material 0.1% weight; ppm; concerning ***) PCDD PCDF Dioxin content lies below agreed limits "Rules Hazardous Materials", replaced soon technically suitable alternative material available ***) Traces cadmium only found lead frames made copper CMT: Material containing carcinogens, mutagens terratogens Tox: Material toxic very toxic Material with allergy producing characteristics Halogen containing material Material hazardous water supply Storage, suitable disposal Disposable Mechanical disposal Chemical disposal Thermal disposal Handling
Document Number 84051 Rev. 1.2, 06-May-04
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Declaration Material Contents DO-35 Package
MATERIAL CONTENT Part Material weight 67.17 29.78 9.43 0.57 0.11 107.1 11.24 1.38 0.13 0.13 0.11 17.9 0.1003 0.0208 0.002 0.0018 0.0003 0.125 80.11 16.60 1.60 1.40 0.20 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0 62.83 27.39 7.71 0.73 0.73 0.61 89866 39176 11033 1039 1039 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 weight 62.74 27.82 8.81 0.53 0.10 total weight 537037 238097 75395 4557
Leads tinned 85.70
TOTAL
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0
Package glass SiO2 14.30
do35
Na2O
DO-35 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip 0.10
TOTAL
SiO2
TOTAL Total weight
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Declaration Material Contents DO-219AB (SMF) Package
MATERIAL CONTENT Part Material weight 6.198 0.153 0.008 0.002 0.210 6.57 0.142 0.005 0.003 0.006 0.16 0.468 0.002 99.57 0.43 31587 7440-21-3 14808-60-7 90.85 3.07 2.11 3.97 9584 7439-92-1 7440-31-5 7440-22-4 107-41-5 weight total weight 10302 14174
Lead frame tinned 44.3
TOTAL
94.34 418311 2.32 0.12 0.03 3.20
7440-50-8 7439-89-6 7440-66-6 7723-14-0 7440-31-5
Solder paste (chip solder)
Hexyleneglyco TOTAL Silicon dioxide TOTAL
DO-219AB (SMF) Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Molding compound 51.4 Silicon chip
And/or traces Au,As,Ti,Ag,Al, 0.47 5.258 1.143 0.533 0.229 69.00 354866 14808-60-7 15.00 7.00 3.00 77145 36001 15429 29690-82-2 9003-35-4 40039-93-8 Cristalline Silica Polyglycidyl ether Phenolic resin Brominated epoxy resin Organo functional silan Antimony trioxid Catalyst TOTAL Total weight
0.076
1.00
5143
2530-83-8
0.229 0.076 0.076 7.62 14.8
3.00 1.00 1.00
15429 5143 5143
1309-64-4 8015-86-9 603-35-0
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Declaration Material Contents MiniMELF SOD-80 Package
MATERIAL CONTENT Part Material weight TOTAL Package Glass 41.10
weight 61.38 27.05 8.63 2.67 0.28 62.92 27.35 7.67 0.71 0.71 0.63 80.19 16.56 1.62 1.41 0.22
total weight 359138 158242 50468 15629 1628 259179 112658 31583 2930 2930 2605 2413
Leads Tinned 58.60
11.03 4.86 1.55 0.48 0.05 17.97 7.96 3.46 0.97 0.09 0.09 0.08 12.65 0.0741 0.0153
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0
minimelf
Al2O3
MiniMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.30
TOTAL
0.0015 0.0013 0.0002 0.0924
TOTAL Total weight
Declaration Material Contents QuadroMELF SOD-80 Package
MATERIAL CONTENT Part Material weight TOTAL Package Glass SiO2 46.20
quadromelf
weight 61.39 27.02 8.64 2.67 0.28 62.96 27.33 7.72 0.71 0.71 0.58 80.22 16.62 1.58 1.38 0.20
total weight 327965 144341 46129 14285 1488 291360 126484 35713 3274 3274 2678 2414
Leads Tinned 53.50
11.02 4.85 1.55 0.48 0.05 17.95 9.79 4.25 0.11 0.11 0.09 15.55 0.0811 0.0168 0.0016 0.0014 0.0002 0.101
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0
QuadroMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.30
TOTAL
TOTAL Total weight
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Document Number 84051 Rev. 1.2, 06-May-04
VISHAY
Vishay Semiconductors
Declaration Material Contents MicroMELF Package
MATERIAL CONTENT Part Material weight 4.39 1.97 0.62 0.09 0.01 7.08 3.21 1.39 0.39 0.04 0.04 0.03 0.074 0.0153 0.0015 0.0013 0.0002 0.0923 12.3 80.17 16.58 1.63 1.41 0.22 6030 1247 7440-21-3 7440-22-4 14808-60-7 1317-36-8 7440-02-0 62.94 27.25 7.65 0.78 0.78 0.59 261565 113263 31779 3259 3259 2445 1317-36-8 14808-60-7 12136-45-7 1313-59-3 1344-28-1 1304-28-5 weight 62.01 27.82 8.76 1.27 0.14 total weight 357716 160524 50520 7334
Leads Tinned 57.70
TOTAL
7439-89-6 7440-50-8 7440-02-0 7440-31-5 1317-38-0
micromelf
Package Glass SiO2 41.50
Na2O
MicroMELF Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon Chip 0.80
TOTAL
SiO2
TOTAL Total weight
Document Number 84051 Rev. 1.2, 06-May-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-123 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
sod123
SOD-123 Diode
MATERIAL CONTENT Part Material weight 0.015 0.01 0.007 0.007 0.078 2.72 0.0006 2.6994 0.04215 0.01785 0.06 0.07968 0.00032 0.08 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.12278 0.37 32.4 32.4 0.005 33.2 12963 12963 13263 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 3241 7440-57-5 99.60 0.40 8608 7440-21-3 14808-60-7 70.3 29.8 4553 1928 7440-22-4 55.00 0.01 44.99 356487 291606 25321-22-6 1333-86-4 14808-60-7 weight 95.7 total weight 280869 1620 1080 8426
Lead frame tinned 29.4
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding (PPS, Polyphenylene Sulfide) 64.8
Mineral reinforcement 1.4- Dichlorobenzene Other Carbon black Silicon dioxide TOTAL Silver powder Hardener epoxy resin TOTAL
Glue
Chip
SiO2 TOTAL
traces Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
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Document Number 84051 Rev. 1.2, 06-May-04
VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-323 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds
sod323
Limit
Analysis
SOD-323 Diode
MATERIAL CONTENT Part Material weight 1.28 0.008 0.005 0.004 0.004 0.04 1.34 1.705 0.00031 1.39 0.04215 0.01785 0.06 0.07968 0.00032 0.08 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.12278 0.37 32.4% 0.5% 0.3% 32.4% 1.1% 0.005% 33.2% 24092 24092 24650 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 100% 6023 7440-57-5 99.60% 0.40% 15997 7440-21-3 14808-60-7 70.3% 29.8% 8462 3584 7440-22-4 55.00% 0.01% 44.99% 342301 280002 25321-22-6 1333-86-4 14808-60-7 weight 95.5% 0.6% 0.4% 0.3% 0.3% 3.0% total weight 256977 1606 1004 8031
Lead frame tinned 26.9
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding (PPS, Polyphenylene
Sulfide) 62.2
Mineral reinforcement 1.4-Dichlorobenzene Other Carbon black Silicon dioxide TOTAL Silver powder Hardener epoxyresin TOTAL
Glue
Chip
SiO2 TOTAL
traces Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
Document Number 84051 Rev. 1.2, 06-May-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOD-523 Package
MATERIAL CONTENT Part Material weight 0.65 0.17 0.026 0.85 0.627 0.015 0.053 0.0001 0.000 0.001 0.696 0.034 0.0035 0.0002 0.0002 0.038 0.013 0.013 1.60 100.0 8141 7440-57-5 89.71 9.23 0.53 0.53 21293 2192 7440-21-3 7440-57-5 14808-60-7 7429-90-5 90.10 392660 2.16 7.62 0.01 0.03 0.09 9394 33191 7440-50-8 7440-22-4 7440-31-5 7440-21-3 7440-47-3 7440-32-6 weight 77.0 20.0 total weight
Mold compound 53.2
409882 14808-60-7 106463 25928-94-3 15969 1309-64-4
epoxy resin
TOTAL Lead frame tinned 43.6 TOTAL Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip
SiO2
sod523
SOD-523 Diode
TOTAL Bond wire TOTAL Total weight
traces
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Document Number 84051 Rev. 1.2, 06-May-04
VISHAY
Vishay Semiconductors
Declaration Material Contents SOT-23 Package
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis
SOT-23 Diode
MATERIAL CONTENT Part Material weight 0.02 0.01 0.008 0.008 0.06 2.81 2.97 0.00054 2.43 0.04215 0.01785 0.06 0.0996 0.0004 0.03 0.03 0.12 0.002 0.0012 0.12 0.004 0.00002 0.15288 0.40 30.0 30.0 0.005 38.2 13642 13642 17380 2421-28-5 14808-60-7 14464-46-1 60676-86-0 1333-86-4 106-89-8 3411 7440-57-5 99.60 0.40 11323 7440-21-3 14808-60-7 70.3 29.8 4792 2029 7440-22-4 55.00 0.01 44.99 337650 276197 25321-22-6 1333-86-4 14808-60-7 weight 96.2 total weight 306954 2274 1137 6821
Lead frame tinned 31.9
TOTAL
7440-50-8 7440-31-5 7440-02-0 7440-47-3 7440-32-6 7440-31-5
Moulding Mineral reinforcement (PPS, Polyphenylene 1.4- Dichlorobenzene Sulfide) 61.4 Other Carbon black Silicon dioxide TOTAL Glue Silver powder Hardener epoxy resin TOTAL Chip SiO2 TOTAL Bond wire Bond wire coating (Epoxy resin) TOTAL Benzophenonetetra carboxylic acid dianhydride Quartz Cristobalite Silica Carbon black Epichlorohydrin Other (harmless addition) TOTAL Total weight
traces
Document Number 84051 Rev. 1.2, 06-May-04
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VISHAY
Vishay Semiconductors
Declaration Material Contents SOT-323 Package
MATERIAL CONTENT Part Material weight 2.45 0.89 0.05 0.03 3.42 1.98 0.23 0.077 0.02 0.01 0.01 2.33 0.2188 93.50 0.0122 0.0012 0.0009 0.0009 0.23 0.018 0.02 100.0 99.90 3001 7440-57-5 5.21 0.51 0.38 0.38 36473 2034 7440-21-3 7440-57-5 14808-60-7 7429-90-5 12033-89-5 85.09 330055 9.88 3.31 0.86 0.43 0.43 38340 12835 3334 1667 1667 7440-50-8 7440-22-4 7440-31.5 7440-02-0 7440-47-3 7440-32-6 weight total weight
Mold compound 57.10
71.64 408401 14808-60-7 26.02 148358 25925-94-3 1.46 0.88 8335 5001 1309-64-4 7726-95-6
epoxy resin
TOTAL Lead frame tinned 38.70 Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Silicon chip 3.90 TOTAL
SiO2
SOT-323 Diode
Si3N4 TOTAL Bond wire TOTAL Total weight
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Document Number 84051 Rev. 1.2, 06-May-04
VISHAY
Vishay Semiconductors
Declaration Material Contents LLP-75 Package
MATERIAL CONTENT Part Material weight 1.34 0.003 0.003 0.003 0.08 1.43 2.608 0.463 0.16 0.016 0.01 3.2603 0.063 0.027 70.2 29.8 12272 5204 7440-22-4 79.99 14.20 5.00 0.50 0.31 506398 89901 31650 3165 1942 25928-943 1309-64-4 1333-86-3 7631-86-3 weight 93.7 total weight 260189 15534
Lead frame tinned 27.8
(plating) TOTAL
7440-50-8 7440-31-5 7440-66-6 7440-47-3 7440-31-5
Mould- Amorphou silica 63.3 Others
LLP-75 Diode
Prohibited Substances Material Cadmium Asbestos Mercury Chromium Polychl. Biphenyle Formaldehyde Compounds Limit Analysis Chip Glue
Epoxy resin Antimony trioxide Carbon black TOTAL Silver powde Hardener epoxy resin TOTAL SiO2
0.09 0.299 0.001 99.60 0.40 58018 7440-21-3 14808-607
traces TOTAL Bond wire TOTAL 0.07 0.07 13592 7440-57-5
Total weight
Document Number 84051 Rev. 1.2, 06-May-04
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VISHAY
Vishay Semiconductors
Marking Diodes
View from View from
Figure LLP75-3A, LLP75-3B
Date code: Year Month
Type code Type code
18919 18904
Cathode band
Figure SOD-323
View from Date code: Year Month type code Cathode band
Cathode
Figure (DO-219AB)
18914
Type code
Figure SOD-523
18918
Annual code
Weekly code
Type code
Figure SOT-23
Cathode band Type code Date code
18920
Manufacturer symbol
Figure SOD-123
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Document Number 84077 Rev. 1.2, 06-May-04
18584
VISHAY
Vishay Semiconductors
view from
view from
Cathodering unwind Cathodering unwind
18578
DO35 Type:
Figure DO-35
18571
Figure SOD-80 MiniMELF Label with information TYPE reel package
view from
view from
Cathodering Cathodering unwind unwind
18580
Figure MicroMELF Label with information TYPE reel package Figure SOD-80 QuadroMELF Label with information TYPE reel package
18579
Document Number 84077 Rev. 1.2, 06-May-04
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VISHAY
Vishay Semiconductors
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Document Number 84077 Rev. 1.2, 06-May-04
Selector Guides
General Information
Datasheets
Packages
Application Notes
Glossary
VISHAY
1N4148 1N4448
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diodes Electrically equivalent diodes: 1N4148 1N914 1N4448 1N914B
Applications
Extreme fast switches
9367
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
Parts Table
Part 1N4148 1N4448 Type differentiation Ordering code Remarks Ammopack Tape Reel Ammopack Tape Reel VRRM 1N4148-TAP 1N4148-TR VRRM 1N4448-TAP 1N4448-TR
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Test condition Symbol VRRM IFSM IFRM IFAV Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value Unit
Document Number 85521 Rev. 1.6, 14-May-04
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1N4148 1N4448
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time tp/T 0.01, MHz, Part 1N4448-TR 1N4148-TR 1N4448-TR Symbol V(BR) 0.62 Typ.
VISHAY
0.72
Unit
Typical Characteristics (Tamb unless otherwise specified)
Forward Voltage
1000
Forward Current
1N4448 Scattering Limit
9171
9169
Junction Temperature
Forward Voltage
Figure Forward Voltage Junction Temperature
1000
Reverse Current Forward Current
Figure Forward Current Forward Voltage
1000
1N4148 Scattering Limit
Scattering Limit
9098
Reverse Voltage
9170
Forward Voltage
Figure Forward Current Forward Voltage
Figure Reverse Current Reverse Voltage
DO-35 Package Dimension Package Section
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Document Number 85521 Rev. 1.6, 14-May-04
VISHAY
1N4148W
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
These diodes also available other case styles including DO-35 case with type designation 1N4148, MiniMELF case with type designation LL4148, SOT-23 case with type designation IMBD4148. Silicon Epitaxial Planar Diode Fast switching diodes
17431
Mechanical Data
Case: SOD-123 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4148W Ordering code 1N4148W-GS18 1N4148W-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Power dissipation
Test condition
Symbol
Value 1501)
Unit
IF(AV)
IFSM Ptot
4001)
Valid provided that electrodes kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature
Test condition
Symbol RthJA
Value 4501)
Unit °C/W
Valid provided that electrodes kept ambient temperature.
Document Number 85748 Rev. 1.3, 14-May-04
www.vishay.com
1N4148W
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Test condition Diode capacitance Voltage rise when switching (tested with pulses) Reverse recovery time Rectification efficiency tested with pulses, rise time 100) MHz, Ctot Symbol Typ.
VISHAY
Unit
0.45
Rectification Efficiency Measurement Circuit
17436
www.vishay.com
Document Number 85748 Rev. 1.3, 14-May-04
VISHAY
1N4148W
Vishay Semiconductors
Typical Characteristics (Tamb unless otherwise specified)
17437
17439
Figure Forward characteristics
Figure Admissible Power Dissipation Ambient Temperature
17438
17440
Figure Dynamic Forward Resistance Forward Current
Figure Relative Capacitance Reverse Voltage
Document Number 85748 Rev. 1.3, 14-May-04
www.vishay.com
1N4148W
Vishay Semiconductors
VISHAY
17441
Figure Leakage Current Junction Temperature
17442
Figure Admissible Repetitive Peak Forward Current Pulse Duration
SOD-123 Package Dimension Package Section
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Document Number 85748 Rev. 1.3, 14-May-04
VISHAY
1N4148WS
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
These diodes also available other case styles including DO-35 case with type designation 1N4148, MiniMELF case with type designation LL4148, SOT-23 case with type designation IMBD4148. Silicon Epitaxial Planar Diode Fast switching diodes
17431
Mechanical Data
Case: SOD-323 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4148WS Ordering code 1N4148WS-GS18 1N4148WS-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge forward current Power dissipation
Test condition
Symbol
Value 1501)
Unit
IF(AV)
IFSM Ptot
2001)
Valid provided that electrodes kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambien Junction temperature Storage temperature
Test condition
Symbol RthJA
Value 6501)
Unit °C/W
Valid provided that electrodes kept ambient temperature.
Document Number 85751 Rev. 1.3, 08-Jul-04
www.vishay.com
1N4148WS
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Test condition Diode capacitance Voltage rise when switching (tested with pulses) Reverse recovery time Rectification efficiency tested with pulses, rise time 100) MHz, Ctot Symbol Typ.
VISHAY
Unit
0.45
Rectification Efficiency Measurement Circuit
17436
www.vishay.com
Document Number 85751 Rev. 1.3, 08-Jul-04
VISHAY
1N4148WS
Vishay Semiconductors
Typical Characteristics (Tamb unless otherwise specified)
17437
17439
Figure Forward characteristics
Figure Admissible Power Dissipation Ambient Temperature
17438
17440
Figure Dynamic Forward Resistance Forward Current
Figure Relative Capacitance Reverse Voltage
Document Number 85751 Rev. 1.3, 08-Jul-04
www.vishay.com
1N4148WS
Vishay Semiconductors
VISHAY
17441
Figure Leakage Current Junction Temperature
17442
Figure Admissible Repetitive Peak Forward Current Pulse Duration
SOD-323 Package Dimension Package Section
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Document Number 85751 Rev. 1.3, 08-Jul-04
VISHAY
1N4150
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode forward voltage drop High forward current capability
Applications
High speed switch general purpose computer industrial applications
9367
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
Parts Table
Part 1N4150 Type differentiation Single Diodes Ordering code 1N4150-TR 1N4150-TAP Remarks Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Average peak forward current Forward current Average forward current Power dissipation Test condition Symbol VRRM IFSM IFRM IFAV Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value Unit
Document Number 85522 Rev. 1.5, 22-Apr-04
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1N4150
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Test condition Reverse current Diode capacitance Reverse recovery time MHz, 100) Symbol 0.54 0.66 0.76 0.82 0.87 Typ. 0.62 0.74 0.86 0.92
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Scattering Limit
DO-35 Package Dimension Package Section
Reverse Currenti
Junction Temperature
0.01
9100
Figure Reverse Current Junction Temperature
1000
Forward Current
Scattering Limit
25°C
9162
Forward Voltage
Figure Forward Current Forward Voltage
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Document Number 85522 Rev. 1.5, 22-Apr-04
VISHAY
1N4150W
Vishay Semiconductors
Small Signal Switching Diode
Features
Silicon Epitaxial Planar Diode general purpose switching This diode also available other case styles including DO-35 case with type designation 1N4150, MiniMELF case with type designation LL4150.
17431
Mechanical Data
Case: SOD-123 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4150W Ordering code 1N4150W-GS18 1N4150W-GS08 Marking Remarks Tape reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Peak reverse voltage Maximum average forward rectified current Maximum power dissipation
Test condition
Symbol IF(AV)
Value 4101)
Unit
Tamb
Ptot
Valid provided that electrodes kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Maximum junction temperature Storage temperature range Test condition Symbol Value Unit
Document Number 85720 Rev. 1.2, 23-Apr-04
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1N4150W
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage drop Reverse current Reverse recovery time Test condition 200) 0.1IF Symbol Typ.
VISHAY
Unit
SOD-123 Package Dimension Package Section
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Document Number 85720 Rev. 1.2, 23-Apr-04
VISHAY
1N4151
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
9367
Parts Table
Part 1N4151 Ordering code 1N4151-TR 1N4151-TAP Marking Remarks Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation 4mm, 4mm, Test condition Symbol VRRM IFSM IFRM IFAV Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value Unit
Document Number 85523 Rev. 1.5, 23-Apr-04
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1N4151
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Test condition MHz, Symbol V(BR) Typ. 0.88
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Reverse Currenti Diode Capacitance
Scattering Limit
9153
25°C
0.01
9151
Junction Temperature
Reverse Voltage
Figure Reverse Current Junction Temperature
Figure Diode Capacitance Reverse Voltage
1000
Forward Current
DO-35 Package Dimension Package Section
9152
Forward Voltage
Figure Forward Current Forward Voltage
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Document Number 85523 Rev. 1.5, 23-Apr-04
VISHAY
1N4151W
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Fast switching diode This diode also available other case styles including DO-35 case with type designation 1N4151, MiniMELF case with type designation LL4151.
17431
Mechanical Data
Case: SOD-123 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4151W Ordering code 1N4151W-GS18 1N4151W-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation
1)Valid
Test condition
Symbol
Value 1501)
Unit
Tamb
IF(AV)
Tamb
IFSM Ptot
4101)
provided that electrodes kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol RthJA
Value 4501)
Unit °C/W
Valid provided that electrodes kept ambient temperature.
Document Number 85721 Rev. 1.2, 14-May-04
www.vishay.com
1N4151W
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Reverse breakdown voltage Capacitance Reverse recovery time Test condition (pulsed) Rectification efficiency MHz, 0.45 Symbol V(BR)R Typ.
VISHAY
Unit
Rectification Efficiency Measurement Circuit
17436
Typical Characteristics (Tamb unless otherwise specified)
Dynamic Forward Resistance
1000
Forward Current
10000 1000
0.01
0.01
18742
Forward Voltage
18662
Forward Current
Figure Forward Current Forward Voltage
Figure Dynamic Forward Resistance Forward Current
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Document Number 85721 Rev. 1.2, 14-May-04
VISHAY
1N4151W
Vishay Semiconductors
Ptot Admissible Power Dissipation
1000
10000
Leakage Current
1000
Junction Temperature
160180 Tamb Ambient Temperature
18744
18743
Figure Admissible Power Dissipation Ambient Temperature
Figure Leakage Current Junction Temperature
Ctot Relative Capacitance
18664
Reverse Voltage
Figure Relative Capacitance Reverse Voltage
Admissible Repetitive Peak Forward Current
18709
Pulse Length
Figure Admissible Repetitive Peak Forward Current Pulse Duration
SOD-123 Package Dimension
Document Number 85721 Rev. 1.2, 14-May-04
Package Section
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1N4151W
Vishay Semiconductors
VISHAY
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Document Number 85721 Rev. 1.2, 14-May-04
VISHAY
1N4151WS
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Fast switching diode This diode also available other case styles including DO-35 case with type designation 1N4151, MiniMELF case with type designation LL4151.
17431
Mechanical Data
Case: SOD-323 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4151WS Ordering code 1N4151WS-GS18 1N4151WS-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation
1)Valid
Test condition
Symbol
Value 1501)
Unit
Tamb
IF(AV)
Tamb
IFSM Ptot
4101)
provided that electrodes kept ambient temperature.
Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol RthJA
Value 4501)
Unit °C/W
Valid provided that electrodes kept ambient temperature.
Document Number 85847 Rev. 1.2, 08-Jul-04
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1N4151WS
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Reverse breakdown voltage Capacitance Reverse recovery time Test condition (pulsed) Rectification efficiency MHz, 0.45 Symbol V(BR)R Typ.
VISHAY
Unit
Rectification Efficiency Measurement Circuit
17436
Typical Characteristics (Tamb unless otherwise specified)
Dynamic Forward Resistance
1000
Forward Current
10000 1000
0.01
0.01
18742
Forward Voltage
18662
Forward Current
Figure Forward Current Forward Voltage
Figure Dynamic Forward Resistance Forward Current
www.vishay.com
Document Number 85847 Rev. 1.2, 08-Jul-04
VISHAY
1N4151WS
Vishay Semiconductors
Ptot Admissible Power Dissipation
1000
10000
Leakage Current
1000
Junction Temperature
160180 Tamb Ambient Temperature
18744
18743
Figure Admissible Power Dissipation Ambient Temperature
Figure Leakage Current Junction Temperature
Ctot Relative Capacitance
18664
Reverse Voltage
Figure Relative Capacitance Reverse Voltage
Admissible Repetitive Peak Forward Current
18709
Pulse Length
Figure Admissible Repetitive Peak Forward Current Pulse Duration
SOD-323 Package Dimension
Document Number 85847 Rev. 1.2, 08-Jul-04
Package Section
www.vishay.com
1N4151WS
Vishay Semiconductors
VISHAY
www.vishay.com
Document Number 85847 Rev. 1.2, 08-Jul-04
VISHAY
1N4154
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
9367
Parts Table
Part 1N4154 Type differentiation VRRM Ordering code 1N4154-TR 1N4154-TAP Remarks Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Test condition Symbol VRRM IFSM IFRM IFAV Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value Unit
Document Number 85524 Rev. 1.6, 12-Feb-04
www.vishay.com
1N4154
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Test condition tp/T 0.01, MHz, Symbol V(BR) Typ. 0.88
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Reverse Currenti Diode Capacitance
Scattering Limit
9156
25°C
0.01
9154
Junction Temperature
Reverse Voltage
Figure Reverse Current Junction Temperature
Figure Diode Capacitance Reverse Voltage
1000
Forward Current
DO-35 Package Dimension Package Section
9152
Forward Voltage
Figure Forward Current Forward Voltage
www.vishay.com
Document Number 85524 Rev. 1.6, 12-Feb-04
VISHAY
1N4448W
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Fast switching diode. This diode also available other case styles including DO-35 case with type designation 1N4448, MiniMELF case with type designation LL4448, SOT-23 case with type designation IMBD4448.
17431
Mechanical Data
Case: SOD-123 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part 1N4448W Ordering code 1N4448W-GS18 1N4448W-GS08 Marking Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation
Valid provided that leads distance from case kept ambient temperature.
Test condition
Symbol
Value 1501)
Unit
IF(AV)
IFSM Ptot
Document Number 85722 Rev. 1.3, 14-May-04
www.vishay.com
1N4448W
Vishay Semiconductors Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature
Valid provided that leads distance from case kept ambient temperature.
VISHAY
Test condition
Symbol RthJA
Value 3501)
Unit °C/W
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Leakage current Test condition Capacitance Reverse recovery time Rectification efficiency MHz, 0.45 Symbol 0.62 Typ. 0.72 Unit
Rectification Efficieny Measurement Circuit
17436
www.vishay.com
Document Number 85722 Rev. 1.3, 14-May-04
VISHAY
Typical Characteristics (Tamb unless otherwise specified)
1N4448W
Vishay Semiconductors
18105
17440
Figure Forward characteristics
Figure Relative Capacitance Reverse Voltage
17438
17441
Figure Dynamic Forward Resistance Forward Current
Figure Leakage Current Junction Temperature
17439
Figure Admissible Power Dissipation Ambient Temperature
Document Number 85722 Rev. 1.3, 14-May-04
www.vishay.com
1N4448W
Vishay Semiconductors
VISHAY
18106
Figure Admissible Repetitive Peak Forward Current Pulse Duration
SOD-123 Package Dimension Package Section
www.vishay.com
Document Number 85722 Rev. 1.3, 14-May-04
VISHAY
1N5711 1N6263
Vishay Semiconductors
Small Signal Schottky Diodes
Features
general purpose applications Metal-on-silicon Schottky barrier device which protected junction guard ring. forward voltage drop fast switching make ideal protection devices, steering, biasing coupling diodes fast switching logic level applications. This diode also available MiniMELF case with type designation LL5711 LL6263.
9367
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
Parts Table
Part 1N5711 1N6263 Ordering code 1N5711-TR 1N5711-TAP 1N6263-TR 1N6263-TAP Marking Remarks Tape Reel Ammopack Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Peak inverse voltage Power dissipation (infinite heatsink) Maximum single cycle surge square wave
Test condition
Part 1N5711 1N6263
Symbol VRRM VRRM Ptot IFSM
Value 4001)
Unit
Valid provided that leads distance from case kept ambient temperature
Document Number 85645 Rev. 1.3, 26-Apr-04
www.vishay.com
1N5711 1N6263
Vishay Semiconductors Thermal Characteristics
Tamb unless otherwise specified Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
VISHAY
Test condition
Symbol RthJA
Value 0.31)
Unit °C/mW
Valid provided that leads distance from case kept ambient temperature
Electrical Characteristics
Tamb unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage drop Junction capacitance Reverse recovery time Test condition recover 1N5711 1N6263 Part 1N5711 1N6263 Symbol Ctot Ctot 0.41 Typ. Unit
Typical Characteristics (Tamb unless otherwise specified)
Forward Current
Forward Current
0.01
18529
18530
Forward Voltage
Forward Voltage
Figure Typical Variation Forward Current Forward Voltage
Figure Typical Forward Conduction Curve
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Document Number 85645 Rev. 1.3, 26-Apr-04
VISHAY
1N5711 1N6263
Vishay Semiconductors
Reverse Current
0.01
18531
Reverse Voltage
Figure Typical Variation Reverse Current Various Temperatures
Typical Capacitance
18532
Reverse Voltage
Figure Typical Capacitance Curve Function Reverse Voltage
DO-35 Package Dimension Package Section
Document Number 85645 Rev. 1.3, 26-Apr-04
www.vishay.com
1N5711 1N6263
Vishay Semiconductors
VISHAY
www.vishay.com
Document Number 85645 Rev. 1.3, 26-Apr-04
VISHAY
1N914
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
Fast switching speed High reliability High conductance general purpose switching applications
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
9367
Parts Table
Part 1N914 Type differentiation VRRM Ordering code 1N914-TAP 1N914-TR Remarks Ammopack Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter repetitive peak reverse voltage Repetitive peak reverse voltage Working peak reverse voltage blocking voltage Reverse voltage Forward current Average rectified current repetitive peak forward surge current Power dissipation half wave rectification with resistive load t=1s Test condition Symbol VRRM VRWM VR(RMS) IFAV IFSM IFSM Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Operating storage temperature range Test condition constant Symbol RthJA Tstg Value +175 Unit
Document Number 85622 Rev. 1.5, 12-Feb-04
www.vishay.com
1N914
Vishay Semiconductors
VISHAY
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Breakdown Voltage Peak reverse current Test condition Diode capacitance Reverse recovery time Symbol Typ. Unit
Typical Characteristics (Tamb unless otherwise specified)
1000
Forward Current
1N4448 Scattering Limit
9171
Forward Voltage
Figure Forward Current Forward Voltage
1000
Reverse Current
Scattering Limit
9098
Reverse Voltage
Figure Reverse Current Reverse Voltage
DO-35 Package Dimension Package Section
www.vishay.com Document Number 85622 Rev. 1.5, 12-Feb-04
VISHAY
BA282 BA283
Vishay Semiconductors
Band Switching Diodes
Features
Silicon Planar Diodes differential forward resistance diode capacitance High reverse impedance
Applications
Band switching VHF-tuners
9367
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
Parts Table
Part BA282 BA283 Type differentiation Ordering code BA282-TR BA282-TAP BA283-TR BA283-TAP Remarks Tape Reel Ammopack Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value +150 Unit
Document Number 85526 Rev. 1.5, 12-Feb-04
www.vishay.com
BA282 BA283
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Test condition MHz, MHz, Differential forward resistance MHz, MHz, Reverse impedance MHz, BA282 BA283 BA282 BA283 BA282 BA283 Part Symbol Typ. 1.25
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Differential Forward Resistance
25°C
DO-35 Package Dimension Package Section
9072
Forward Current
Figure Differential Forward Resistance Forward Current
Diode Capacitance
9073
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
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Document Number 85526 Rev. 1.5, 12-Feb-04
VISHAY
BA479G BA479S
Vishay Semiconductors
Diodes Single DO-35
Features
Wide frequency range
Applications
Current controlled resistance adjustable attenuators
Mechanical Data
Case: DO-35 Glass case Weight: approx. Packaging Codes/Options: reel tape), k/box Ammopack tape), k/box
9367
Parts Table
Part BA479G BA479S Type differentiation Ordering code BA479G-TR BA479G-TAP BA479S-TR BA479S-TAP Remarks Tape Reel Ammopack Tape Reel Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition constant Symbol RthJA Tstg Value Unit
Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Test condition MHz, MHz, Part Symbol Typ. Unit
Document Number 85527 Rev. 1.5, 26-Apr-04
www.vishay.com
BA479G BA479S
Vishay Semiconductors
Parameter Reverse impedance Minority carrier lifetime Test condition MHz, Part BA479G BA479S Symbol Typ.
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Forward Current Typical Cross Modulation Distortion
Circuit with Attenuation dBmV unmodulated modulated with kHz, 100% (MHz)
Tamb 25°C Scattering Limit
0.01
9735
Forward Voltage
9733
Figure Forward Current Forward Voltage
Figure Typ. Cross Modulation Distortion Frequency
10000
Differential Forward Resistance
DO-35 Package Dimension Package Section
1000
0.001
0.01
9734
Forward Current
Figure Differential Forward Resistance Forward Current
www.vishay.com
Document Number 85527 Rev. 1.5, 26-Apr-04
VISHAY
BA604
Vishay Semiconductors
Small Signal Switching Diode
Features
Silicon Planar Diode
Applications
General purpose
Mechanical Data
Case: MiniMELF Glass case (SOD-80) Weight: approx. Cathode Band Color: Black Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), 12.5 k/box
9371
Parts Table
Part BA604 Type differentiation VRSM Ordering code BA604-GS18 BA604-GS08 Remarks Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Peak reverse voltage, repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation Test condition Symbol VRSM IFSM IFRM Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction lead Junction temperature Storage temperature range Test condition board constant Symbol RthJA RthJL Tstg Value Unit
Document Number 85528 Rev. 1.6, 17-Feb-04
www.vishay.com
BA604
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Test condition Breakdown voltage Reverse recovery time Diode capacitance Symbol V(BR) Typ.
VISHAY
Unit
MiniMELF SOD-80 Package Dimension Package Section
www.vishay.com
Document Number 85528 Rev. 1.6, 17-Feb-04
VISHAY
BA679 BA679S
Vishay Semiconductors
Diodes Single MiniMELF SOD-80
Features
Wide frequency range
Applications
Current controlled resistance adjustable attenuators
Mechanical Data
Case: MiniMELF Glass case (SOD-80) Weight: approx. Cathode Band Color: Black Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), 12.5 k/box
9371
Parts Table
Part BA679 BA679S Type differentiation Ordering code BA679-GS18 BA679-GS08 BA679S-GS18 BA679S-GS08 Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition board Symbol RthJA Tstg Value Unit
Document Number 85529 Rev. 1.5, 26-Apr-04
www.vishay.com
BA679 BA679S
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test condition MHz, MHz, MHz, BA679 BA679S Part Symbol Typ.
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Forward Current Typical Cross Modulation Distortion
Circuit with Attenuation dBmV unmodulated modulated with kHz, 100% (MHz)
Tamb 25°C Scattering Limit
0.01
9735
Forward Voltage
9733
Figure Forward Current Forward Voltage
Figure Typ. Cross Modulation Distortion Frequency
10000
Differential Forward Resistance
MiniMELF SOD-80 Package Dimension Package Section
1000
0.001
0.01
9734
Forward Current
Figure Differential Forward Resistance Forward Current
www.vishay.com
Document Number 85529 Rev. 1.5, 26-Apr-04
VISHAY
BA682 BA683
Vishay Semiconductors
Band Switching Diodes
Features
Silicon Planar Diodes differential forward resistance diode capacitance High reverse impedance
Applications
Band switching VHF-tuners
9371
Mechanical Data
Case: MiniMELF Glass case (SOD-80) Weight: approx. Cathode Band Color: Black Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), 12.5 k/box
Parts Table
Part BA682 BA683 Type differentiation Ordering code BA682-GS18 BA682-GS08 BA683-GS18 BA683-GS08 Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition board Symbol RthJA Tstg Value +150 Unit
Document Number 85530 Rev. 1.4, 26-Apr-04
www.vishay.com
BA682 BA683
Vishay Semiconductors Electrical Characteristics
Tamb unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Test condition MHz, MHz, Differential forward resistance MHz, MHz, BA682 BA683 BA682 BA683 BA682 BA683 Part Symbol Typ. 1.25
VISHAY
Unit
Typical Characteristics (Tamb unless otherwise specified)
Differential Forward Resistance
Forward Current
9074
Figure Differential Forward Resistance Forward Current
Diode Capacitance
9075
Reverse Voltage
Figure Diode Capacitance Reverse Voltage
MiniMELF SOD-80 Package Dimension Package Section
www.vishay.com Document Number 85530 Rev. 1.4, 26-Apr-04
VISHAY
BA779 BA779S
Vishay Semiconductors
Diodes Single SOT-23
Features
Wide frequency range
Applications
Current controlled resistance adjustable attenuators
16923
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. Packaging Codes/Options: GS18 reel tape), k/box GS08 reel tape), k/box
Parts Table
Part BA779 BA779S Type differentiation Ordering code BA779-GS18 BA779-GS08 BA779S-GS18 BA779S-GS08 Remarks Tape Reel Tape Reel
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Reverse voltage Forward current Test condition Symbol Value Unit
Thermal Characteristics
Tamb unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition board Symbol RthJA Tstg Value Unit
Document Number 85532 Rev. 1.6, 09-Jul-04
www.vishay.com
BA779 BA779S
Vishay Semiconductors Electrical Characteristics
Tamb unless
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