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ASSP Power Management Applications BIPOLAR Switching Regulat
Top Searches for this datasheetDS04-27200-9Ea ASSP Power Management Applications BIPOLAR Switching Regulator Controller (Switchable between push-pull single-end functions) MB3759 DESCRIPTION MB3759 control constant-frequency pulse width modulated switching regulators. contains most functions required switching regulator control circuits. This reduces both component count assembly work. FEATURES Drives load push-pull single-end operation Prevents double pulses Adjustable dead-time Error amplifier wide common phase input range Built circuit prevent misoperation power supply voltage. Built internal reference voltage with superior voltage reduction characteristics type package (SOP-16pin type) Application Power supply module Industrial Equipment AC/DC Converter etc. Copyright©1994-2008 FUJITSU MICROELECTRONICS LIMITED rights reserved 2006.5 MB3759 ASSIGNMENT (TOP VIEW) +IN1 +IN2 -IN2 VREF (FPT-16P-M06) -IN1 BLOCK DIAGRAM Output control Dead time control Error +IN1 -IN1 +IN2 -IN2 Feed back VREF comparator Reference regurator Error MB3759 ABSOLUTE MAXIMUM RATINGS Parameter Power supply voltage Collector output voltage Collector output current Amplifier input voltage Power dissipation Operating ambient temperature Symbol Condition Rating +125 Unit Storage temperature Tstg When mounted square double-sided epoxy circuit board (1.5 thickness) ceramic circuit board (0.5 thickness) WARNING: Semiconductor devices permanently damaged application stress (voltage, current, temperature, etc.) excess absolute maximum ratings. exceed these ratings. RECOMMENDED OPERATING CONDITIONS Parameter Power supply voltage Collector output voltage Collector output current Amplifier input voltage sink current source current Reference section output current Timing resistor Timing capacitor Oscillator frequency Operating ambient temperature Symbol ISINK ISOURCE IREF fosc Value -0.3 1000 Unit Note: Values standard derating conditions. Give consideration ambient temperature power consumption using high supply voltage. WARNING: recommended operating conditions required order ensure normal operation semiconductor device. device's electrical characteristics warranted when device operated within these ranges. Always semiconductor devices within their recommended operating condition ranges. Operation outside these ranges adversely affect reliability could result device failure. warranty made with respect uses, operating conditions, combinations represented data sheet. Users considering application outside listed conditions advised contact their representatives beforehand. MB3759 ELECTRICAL CHARACTERISTICS (VCC Parameter Output voltage Input regulation Load regulation Reference section Temperature stability Short circuit output current Reference lockout voltage Reference hysteresis voltage Oscillator frequency Standard deviation frequency Frequency change with voltage Frequency change with temperature Input bias current Maximum duty cycle (Each output) Input threshold voltage duty cycle duty cycle Symbol VREF VR(IN) VR(LD) VR/T fosc fosc/T Condition 1000 1000 5.25 Value 4.75 ±200 ±0.1 ±0.01 5.25 ±750 Unit µV/°C %/°C (Continued) Oscillator section Dead-time control section MB3759 (Continued) (VCC Parameter Input offset voltage Input offset current Input bias current Common-mode input voltage Error amplifier section Open-loop voltage amplification Unity-gain bandwidth Common-mode rejection ratio Output sink ISINK current (pin ISOURCE Collector leakage current Emitter leakage current Output section Collector emitter saturation voltage Emitter grounded Emitter follower Symbol ISINK ISOURCE VSAT(C) VSAT(E) IOPC ISINK Condition (pin3) (pin3) (pin3) -200 VREF Duty (pin3) V(pin4) Refer TEST CIRCUIT" V(pin6) VREF, open Value -0.3 -0.2 ±250 -1.0 -100 Unit Output control input current comparator section Input threshold voltage Input sink current (pin Power supply current Standby current Rise time Switching characteristics Fall time Rise time Fall time Emitter grounded Emitter follower ICCQ MB3759 TEST CIRCUIT TEST INPUT 1000 OUTPUT OUTPUT +IN1 -IN1 +IN2 -IN2 VREF OPERATING TIMING Voltage OUTPUT OUTPUT MB3759 OSCILLATION FREQUENCY fosc OUTPUT LOGIC TABLE Input (Output Control) VREF Push-pull Output State Single-ended parallel output MB3759 TYPICAL CHARACTERISTICS Reference voltage power supply voltage Reference voltage change operating ambient temperature Reference voltage VREF Reference voltage change VREF (mV) VREF VREF Reference voltage change VREF (mV) +100 Power supply voltage Operating ambient temperature (°C) Oscillator frequency Maximum duty dead time control voltage Maximum duty Oscillator frequency fOSC (HZ) 0.1µF 0.01µF 1000 1000 +25°C +70°C Dead time control voltage (Continued) MB3759 Open loop voltage amplification frequency Output voltage output current (feed back terminal) +70°C +70°C +25°C +25°C Open loop voltage amplification (dB) level output voltage Frequency (Hz) Output current IOL, (mA) Collector saturation voltage collector output current Collector saturation voltage VSAT Emitter saturation voltage VSAT Emitter saturation voltage emitter output current +25°C +25°C +70°C +70°C Collector output current (mA) Emitter output current (mA) (Continued) High level output voltage MB3759 (Continued) Output voltage reference voltage Power supply current ,ICCQ (mA) VOUT Power supply current power supply voltage ICCQ Output voltage VOUT Reference voltage VREF Power supply voltage Power dissipation power supply voltage Power dissipation Operating ambient temperature 1000 +25°C (200, Power dissipation (mW) (100, (200, (100, Power dissipation (mW) (IO, (mA) 1000 (100, +100 Power supply voltage Operating ambient temperature (°C) MB3759 BASIC OPERATION Switching regulators achieve high level efficiency. This section describes basic principles operation using chopper regulator example. shown diagram, diode provides current path current through inductance when off. Transistor performs switching operated frequency that provides stable output. switching element saturated when cutoff when off, losses switching element much less than series regulator which pass transistor always active state. While conducting, input voltage supplied circuit when off, energy stored supplied load diode circuit smooths input supply output voltage. output voltage given following equation. Toff Switching element Flywheel diode indicated equation, variation input voltage compensated controlling duty cycle (Ton/ drops, control circuit operates increase duty cycle keep output voltage constant. current through flows from input output when through when off. Accordingly, average input current product output current duty cycle theoretical conversion efficiency switching loss loss ignored follows. theoretical conversion efficiency 100%. practice, losses occur switching element elsewhere, design decisions minimize these losses include making switching frequency practical setting optimum ratio input output voltage. MB3759 SWITCHING ELEMENT Selection Switching Transistor said that success otherwise switching regulator determined choice switching transistor. Typically, following parameters considered selecting transistor. Withstand voltage Current Power Speed withstand voltage, current, power, necessary determine that area safe operation (ASO) intended transistor covers intended range these parameters. speed (switching speed: rise time storage time tstg, fall time related efficiency also influences power. figures show transistor load curve waveforms chopper inverter-type regulators. chopper regulator relatively easy circuit deal with diode clamps collector. peak seen immediately after turn-on. However, this diode explained later. inverter regulator, diodes secondary side clamp. Viewed from primary side, however, leakage inductance present. This results inductive spike which must taken account added double voltage. chopper regulator inverter regulator MB3759 figure below shows example characteristics forward-biased power transistor (2SC3058A) suitable switching. Check that characteristics transistor intend fully covers load curve. Next, check whether following conditions satisfied. transistor expected perform switching operation safely. intended time does exceed ON-time specified characteristic. OFF-time characteristic satisfies intended operation conditions. Derating junction temperature been taken into account. switching transistor, junction temperature closely related switching speed. This because switching speed becomes slower temperature increases this affects switching losses. Forward-biased area safe operation single pulse 2SC3058A (450 (Pulse) max. max. +25°C Single pulse Collector current 0.05 Collector emitter voltage 1000 Selecting Diode Consideration must given switching speed when selecting diode. chopper regulators particular, diode affects efficiency noise characteristics influence performance switching regulator. reverse recovery time diode slower than turn-on time transistor, in-rush current more than twice load current occurs resulting noise (spikes) reduced efficiency. rule diode selection, diode with reverse recovery time that sufficiently faster than transistor MB3759 APPLICATION PRACTICAL CIRCUITS Error Amplifier Gain Adjustment Take care that bias current does become large when connecting external circuit (pin adjusting amplifier gain. (pin biased level sink current, duty cycle output signal will affected current from external circuit greater than amplifier sink. figure below shows suitable circuit adjusting gain. very important that avoid having capacitive load connected output stage this will affect response time. VREF Synchronized Oscillator Operation oscillator halted connecting (pin (pin supplying signal externally, halt internal oscillator input (pin Using this method, multiple used together synchronized operation. synchronized operation, master connect other shown diagram. Master Slave VREF MB3759 Soft Start soft start function incorporated using dead-time control element (DT) (pin VREF R1+R2 VREF Setting dead-time Incorporating soft start When power turned charged input pulled VREF (pin causing output transistor turn off. Next, input voltage (pin drops accordance with constant causing output pulse width increase steadily, providing stable control circuit operation. wish both dead-time softstart, combine these configuration. VREF Output Current Limiting (Fallback system using detection resistor inserted output side) Typical example VREF MB3759 Initial limit current condition VREF diode reverse biased, (where input offset voltage op-amp (-10 this causes variation Accordingly, example variation limited using equation only considering variation offset voltage gives following: This indicates setting more required. Polarity change point this point where diode becomes forward biased, calculated substituting [R4/(R3+R4) VREF equation (where forward voltage diode). VREF Final limit current limit current when point where voltages either side either side biased. R4R5 VREF R3R5 R4R5 R3R4 R3R5 R4R5 VREF R3//R4 resistance formed parallel (R3R4/(R3 R4)). When R3//R4 equation becomes: VREF addition determining limit current diode also operate starter when power turned Starter circuit figure below shows case when starter circuit formed present. output current after operation current limiting circuit When such when power turned output current and, offset voltage positive, output current limited being negative therefore output voltage does rise. Accordingly, using fallback system with detection resistor inserted output, always include starter circuit, expect cases described later. MB3759 Example that does diode VREF R1+R2 R3+R4 R1+R2 R3+R4 output current after current limiting VREF this case, current flows into reference voltage source VREF. maintain stability reference voltage, design circuit such that this does exceed MB3759 When external stabilized negative power supply present -VEE output current after current limiting VEE) >>R1) output momentarily shorted, goes briefly negative. this case, voltage across less ensure that voltage less than -0.3 applied op-amp input. MB3759 Example Power Supply Voltage Supply Circuit Supplied Zener diode MB3759 MB3759 Supplied three-terminal regulator Three-terminal regulator MB3759 Example Protection Circuit Output Transistor monolithic characteristics, applying negative voltage greater than diode voltage substrate (pin MB3759 causes parasitic effect which result misoperation. Accordingly, following measures required driving transformer similar directly from output transistor Protect output transistor from parasitic effect using Schottky barrier diode. MB3759 Provide bias anode-side diode clamp level side transistor. Drive transformer buffer transistor. MB3759 Typical Application (1)Chopper regulator 0.22 -IN1 +IN1 VREF -IN2 +IN2 2200 2200 MB3759 Inverter regulator 2200 0.22 -IN1 +IN1 VREF -IN2 +IN2 2200 MB3759 NOTES Take account common impedance when designing earth line printed wiring board. Take measures against static electricity. semiconductors, antistatic conductive containers. When storing carrying printed circuit board after chip mounting, conductive container. work table, tools measuring instruments must grounded. worker must grounding device containing resistors series. apply negative voltage Applying negative voltage -0.3 less generate parasitic transistor, resulting malfunction. ORDERING INFORMATION Part number MB3759PF- MB3759PF-E1 Package 16-pin plastic (FPT-16P-M06) 16-pin plastic (FPT-16P-M06) Remarks Conventional version Lead Free version RoHS Compliance Information Lead (Pb) Free version products Fujitsu Microelectronics with "E1" compliant with RoHS Directive observed standard lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB) polybrominated diphenyl ethers (PBDE) product that conforms this standard added "E1" part number. MARKING FORMAT (Lead Free version) MB3759 XXXX INDEX SOP-16 Lead Free version MB3759 LABELING SAMPLE (Lead free version) lead-free mark JEITA logo JEDEC logo MB123456P (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 PASS 1,000 MB123456P 2006/03/01 ASSEMBLED JAPAN MB123456P 0605 Z01A 1000 1561190005 Lead Free version MB3759 MB3759PF-E1 RECOMMENDED CONDITIONS MOISTURE SENSITIVITY LEVEL Item Mounting Method Mounting times Before opening Storage period From opening reflow When storage period after opening exceeded Storage conditions Condition (infrared reflow) Manual soldering (partial heating method) times Please within years after Manufacture. Less than days Please processes within days after baking (125 24H) 70%RH less (the lowest possible humidity) [Temperature Profile Standard Reflow] (infrared reflow) rank (d') Temperature Increase gradient Preliminary heating Temperature Increase gradient Actual heating (d') Cooling Average °C/s °C/s Temperature 180s Average °C/s °C/s Temperature Max; more, less Temperature more, less Temperature more, less Temperature more, less Natural cooling forced cooling Note Temperature package body Manual soldering (partial heating method) Conditions Temperature Times max/pin MB3759 PACKAGE DIMENSION 16-pin plastic Lead pitch Package width package length Lead shape Sealing method Mounting height Weight 1.27 10.15 Gullwing Plastic mold 2.25 0.20 (FPT-16P-M06) Code (Reference) 16-pin plastic (FPT-16P-M06) *110.15 -0.20 .400 -.008 +0.25 +.010 Note These dimensions include resin protrusion. Note These dimensions include resin protrusion. Note Pins width pins thickness include plating thickness. Note Pins width include cutting remainder. 0.17 -0.04 +0.03 +.001 .007 -.002 INDEX 5.30±0.30 7.80±0.40 (.209±.012) (.307±.016) Details part 2.00 -0.15 .079 -.006 +0.25 +.010 (Mounting height) 0.13(.005) 0.25(.010) 0~8° 1.27(.050) 0.47±0.08 (.019±.003) 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.10 -0.05 +0.10 +.004 .004 -.002 (Stand off) 0.10(.004) 2002 FUJITSU LIMITED F16015S-c-4-7 Dimensions (inches). Note: values parentheses reference values. MB3759 MEMO FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ further information please contact: North South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 Arques Avenue, Sunnyvale, 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 Korea FUJITSU MICROELECTRONICS KOREA LTD. KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA LTD. Lorong Chuan, #05-08 Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw Rights Reserved. contents this document subject change without notice. Customers advised consult with sales representatives before ordering. information, such descriptions function application circuit examples, this document presented solely purpose reference show examples operations uses FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does warrant proper operation device with respect based such information. When develop equipment incorporating device based such information, must assume responsibility arising such information. FUJITSU MICROELECTRONICS assumes liability damages whatsoever arising information. information this document, including descriptions function schematic diagrams, shall construed license exercise intellectual property right, such patent right copyright, other right FUJITSU MICROELECTRONICS third party does FUJITSU MICROELECTRONICS warrant non-infringement third-party's intellectual property right other right using such information. FUJITSU MICROELECTRONICS assumes liability infringement intellectual property rights other rights third parties which would result from information contained herein. products described this document designed, developed manufactured contemplated general use, including without limitation, ordinary industrial use, general office use, personal use, household use, designed, developed manufactured contemplated accompanying fatal risks dangers that, unless extremely high safety secured, could have serious effect public, could lead directly death, personal injury, severe physical damage other loss (i.e., nuclear reaction control nuclear facility, aircraft flight control, traffic control, mass transport control, medical life support system, missile launch control weapon system), requiring extremely high reliability (i.e., submersible repeater artificial satellite). Please note that FUJITSU MICROELECTRONICS will liable against and/or third party claims damages arising connection with above-mentioned uses products. semiconductor devices have inherent chance failure. must protect against injury, damage loss from such failures incorporating safety design measures into your facility equipment such redundancy, fire protection, prevention over-current levels other abnormal operating conditions. Exportation/release products described this document require necessary procedures accordance with regulations Foreign Exchange Foreign Trade Control Japan and/or export control laws. company names brand names herein trademarks registered trademarks their respective owners. Edited Strategic Business Development Dept. 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