Silicon n-channel junction (Tr1) Silicon epitaxial planar type (Tr2)

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon n-channel junction (Tr1) Silicon epitaxial planar type (Tr2)

Datasheet Thumbnail

Top Searches for this datasheet

XP08081 (XP8081)
Silicon n-channel junction (Tr1) Silicon epitaxial planar type (Tr2)
analog switching (Tr1)/switching (Tr2) Features
elements incorporated into package Transistors with built-in resistor) Reduction mounting area assembly cost half
(0.425)
Unit:
0.12+0.05 -0.02
0.2±0.05
1.25±0.10 2.1±0.1
(0.65) (0.65)
Basic Part Number
2SK1103 UNR2213 (UN2213)
1.3±0.1 2.0±0.1
0.9±0.1
Parameter Gate-drain surrender voltage Drain current Gate current Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature
Symbol VGDS VCBO VCEO Tstg
Rating +150
Unit
Drain (Tr1) Source (Tr1) Collector (Tr2) EIAJ: SC-88
Marking Symbol: Internal Connection
0.9+0.2 -0.1
Absolute Maximum Ratings 25°C
Emitter (Tr2) Base (Tr2) Gate (Tr1) SMini6-G1 Package
Note) part number parenthesis shows conventional part number.
Publication date: March 2004 SJJ00218CED
0.2±0.1
XP08081
Electrical Characteristics 25°C
Parameter Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Gate-source cutoff voltage Mutual conductance Drain-source resistance Short-circuit forward transfer capacitance (Common source) Reverse transfer capacitance (Common source) Short-circuit output capacitance (Common source) Symbol VGDS IDSS IGSS VGSC RDS(on) Ciss Crss Coss Conditions -1.0 Unit
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors.
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO VCE(sat) Conditions -30% +30% 0.25 Unit
Note) Measuring methods based JAPANESE INDUSTRIAL STANDARD 7030 measuring methods transistors.
SJJ00218CED
XP08081
Characteristics charts
25°C
Total power dissipation (mW)
Drain current (mA)
Drain current (mA)
-25°C 25°C
75°C
-1.2
-1.0
Ambient temperature (°C)
Drain-source voltage
Gate-source voltage
Ciss Crss Coss
Short-circuit forward transfer capacitance (Common source) Ciss Reverse transfer capacitance (Common source) Crss Short-circuit output capacitance (Common source) Coss (pF)
Forward transfer admittance (mS)
Forward transfer admittance (mS)
25°C
25°C
25°C
IDSS
IDSS
Ciss
Coss Crss
-1.6
-1.2
Gate-source voltage
Drain current (mA)
Drain-source voltage
SJJ00218CED
XP08081
Characteristics charts
25°C
VCE(sat)
Collector-emitter saturation voltage VCE(sat)
Forward current transfer ratio
Collector current (mA)
75°C 25°C -25°C
25°C -25°C 0.01
75°C
Collector-emitter voltage
Collector current (mA)
Collector current (mA)
Collector output capacitance (pF) (Common base, input open circuited)
25°C
25°C
25°C
Output current (µA)
Input voltage
0.01
Collector-base voltage
Input voltage
Output current (mA)
SJJ00218CED
Request your special attention precautions using technical information semiconductors described this material
export permit needs obtained from competent authorities Japanese Government products technical information described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuits examples products. neither warrants non-infringement intellectual property right other rights owned company third party, grants license. liable infringement rights owned third party arising technical information described this material. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this material subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with guaranteed values, particular those maximum rating, range operating power supply voltage, heat radiation characteristics. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. When using products which damp-proof packing required, observe conditions (including shelf life amount time standing unsealed items) agreed upon when specification sheets individually exchanged. This material reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.
2003

Silicon n-channel junction (Tr1) Silicon epitaxial planar type (Tr2)

Top Searches for this datasheet

Other recent searches