GM71C4403C 1,048,576 WORDS 4BIT CMOS DYNAMIC Features 1
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GM71C4403C generation dynamic organized 1,048,576 words bit. GM71C4403C realized higher density, higher performance various functions utilizing advanced CMOS process technology. GM71C4403C offers Extended Data (EDO) Mode high speed access Mode. Multiplexed address inputs permit GM71C4403C packaged standard 300mil 20(26) plastic standard 300mil 20(26) plastic TSOP package size provides high system densities compatible with widely available automated testing insertion equipment. System oriented features include single power supply 5V+/-10% tolerance, direct interfacing capability with high performance logic families such Schottky TTL.
GM71C4403C
1,048,576 WORDS 4BIT CMOS DYNAMIC
Features
1,048,576 Words Organization Extended Data Mode Capability Single Power Supply (5V+/-10%) Fast Access Time Cycle Time (Unit:
tRAC
GM71C4403C-60 GM71C4403C-70 GM71C4403C-80
tCAC
tHPC
Power Active 605/550/495mW (MAX) Standby 5.5mW (CMOS level MAX) Only Refresh, before Refresh, Hidden Refresh Capability inputs outputs Compatible *1024 Refresh Cycles/16ms
Configuration
(26)
I/O1 I/O2
(26) TSOP
I/O4 I/O3 I/O1 I/O2
I/O4 I/O3
I/O4 I/O3
I/O1 I/O2
NORMAL TYPE
REVERSE TYPE
(Top View)
(Top View)
Semicon
A0-A9 A0-A9 I/O1-I/O4 Function Address Inputs Refresh Address Inputs Data Input Data Output Address Strobe Column Address Strobe
GM71C4403C
Function Read/Write Enable Output Enable Power (+5V) Ground
Ordering Information
Type GM71C4403CJ-60 GM71C4403CJ-70 GM71C4403CJ-80 GM71C4403CT-60 GM71C4403CT-70 GM71C4403CT-80 GM71C4403CR-60 GM71C4403CR-70 GM71C4403CR-80 Access Time 60ns 70ns 80ns 60ns 70ns 80ns 60ns 70ns 80ns Package Mil, (26) Plastic Mil, (26) Plastic TSOP (Normal Type) Mil, (26) Plastic TSOP (Reverse Type)
Absolute Maximum Ratings*
Symbol TSTG VIN/VOUT IOUT Parameter Ambient Temperature under Bias Storage Temperature (Plastic) Voltage Relative Voltage Relative Short Circuit Output Current Power Dissipation Rating -1.0 -1.0 Unit
*Note: Operation above Absolute Maximum Ratings adversely affect device reliability.
Recommended Operating Conditions (All Voltage referenced Vss, 70C)
Symbol Parameter Supply Voltage Input High Voltage Input Voltage -1.0 Unit
Semicon
Electrical Characteristics (VCC 5V+/-10%, 70C)
Symbol ICC1 Parameter
Output Level Output Level Voltage (IOUT -5mA) Output Level Output Level Voltage (IOUT 4.2mA) Operating Current Average Power Supply Operating Current (RAS, CAS, Address Cycling: min) Standby Current (TTL) Power Supply Standby Current (RAS, CAS= VIH, DOUT High-Z) RAS-Only Refresh Current Average Power Supply Current RAS-Only Refresh Mode (RAS Cycling, VIH, min) Extended Data Page Mode Current Average Power Supply Current Extended Data Mode (RAS VIL, CAS, Address Cycling: tHPC tHPC min) Standby Current (CMOS) Power Supply Standby Current (RAS, CAS= VIH, Address DIN=VIH VIL, DOUT=High-Z) CAS-before-RAS Refresh Current (tRC min) 60ns 70ns 80ns 60ns 70ns 80ns 60ns 70ns 80ns 60ns 70ns 80ns
GM71C4403C
Unit Note
ICC2
ICC3
ICC4
ICC5
ICC6
ICC8
Standby Current DOUT Enable Input Leakage Current Input (0V<=VIN<=7V) Output Leakage Current (DOUT Disabled, 0V<=VOUT<=7V)
II(L) IO(L)
Note: depends output load condition when device selected. ICC(max) specified output open condition. Address changed once less while VIL. Address changed once less while VIH.
Semicon
Capacitance (VCC 5V+/-10%, 25C)
Symbol CI/O
GM71C4403C
Parameter
Input Capacitance (Address) Input Capacitance (Clocks) Data Input/Output Capacitance (Data-In/Out)
Unit
Note
Note: Capacitance measured with Boonton Meter effective capacitance measuring method. disable DOUT.
Characteristics (VCC 5V+/-10%, 70C, Notes
Test Conditions Input level VIL=0V, VIH=3.0V Input rise fall times: Input timing reference levels: VIL=0.8V, VIH=2.4V Output timing reference levels: VOL=0.8V, VOH=2.0V Output load gate (Including scope jig)
Read, Write, Read-Modify-Write Refresh Cycles (Common Parameters)
Symbol Parameter
Random Read Write Cycle Time Precharge Time Pulse Width Pulse Width Address Set-up Time Address Hold Time Column Address Set-up Time Column Address Hold Time Delay Time Column Address Delay Time Hold Time Hold Time Precharge Time Delay Time Delay Time from Set-up Time from Transition Time (Rise Fall) Refresh Period
GM71C4403 C-60 GM71C4403 C-70 GM71C4403 C-80
Unit
Note
tRAS tCAS tASR tRAH tASC tCAH tRCD tRAD tRSH tCSH tCRP tODD tDZO tDZC tREF
10,000 10,000 10,000 10,000
10,000 10,000
Semicon
Read Cycle
Symbol Parameter
Access Time from Access Time from Access Time from Address Access Time from Read Command Setup Time Read Command Hold Time Read Command Hold Time Column Address Lead Time Column Address Lead Time Output Buffer Turn-off Time Output Buffer Turn-off Time Delay Time Delay Time Delay Time Pulse width Output Buffer Turn-off Time Output Buffer Turn-off Time Output Data Hold Time Output Data Hold Time form Read Command Hold Time from
GM71C4403 C-60 GM71C4403 C-70
GM71C4403C
GM71C4403 C-80
Unit
Note
2,3,17
tRAC tCAC tOAC tRCS tRCH tRRH tRAL tCAL tOFF tOEZ tCDD tRDD tWDD tOEP tOFR tWEZ tOHR tRCHR
3,17
6,21
6,21
Semicon
Write Cycle
Symbol Parameter
Write Command Setup Time Write Command Hold Time Write Command Pulse Width Write Command Lead Time Write Command Lead Time Data-in Setup Time Data-in Hold Time
GM71C4403 C-60 GM71C4403 C-70
GM71C4403C
GM71C4403 C-80
Unit
Note
tWCS tWCH tRWL tCWL
Read- Modify-Write Cycle
Symbol Parameter
Read-Modify-Write Cycle Time Delay Time Delay Time Column Address Delay Time Hold Time from
GM71C4403 C-60 GM71C4403 C-70 GM71C4403 C-80
Unit
Note
tRWC tRWD tCWD tAWD tOEH
Refresh Cycle
Symbol Parameter
Set-up Time (CAS-before-RAS Refresh Cycle) Hold Time (CAS-before-RAS Refresh Cycle) Precharge Hold Time Precharge Time Normal Mode
GM71C4403 C-60 GM71C4403 C-70 GM71C4403 C-80
Unit
Note
tCSR tCHR tRPC tCPN
Semicon
Extended Data (EDO) Mode Cycle
Symbol Parameter
Mode Cycle Time Mode Precharge Time Mode Pulse Width Access Time from Precharge Hold Time from Precharge Read-Modify-Write Cycle Precharge Delay Time Read-Modify-Write Cycle Time
GM71C4403 C-60 GM71C4403 C-70
GM71C4403C
GM71C4403 C-80
Unit
Note
100,000
tHPC tRASP tACP tRHCP tCPW tHPRWC tCOL tCOP tRCHP tDOH
100,000
100,000
3,13,17
Hold Time Referred setup Time Read Command Hold Time from Precharge Output data hold time from
Test Mode Cycle
Symbol Parameter
Test Mode Setup Time Test Mode Hold Time
GM71C4403 C-60 GM71C4403 C-70 GM71C4403 C-80
Unit
Note
Counter Test Cycle
Symbol Parameter
Precharge Time Counter Test Cycle
GM71C4403 C-60 GM71C4403 C-70 GM71C4403 C-80
Unit
Note
tCPT
Semicon
Notes:
measurements assume
GM71C4403C
2ns.
Assumes that tRCD<=tRCD(max) tRAD<=tRAD(max). tRCD tRAD greater than maximum recommended value shown this table, tRAC exceeds value shown. Measured with lode circuit equivalent loads Assumes that tRCD>=tRCD(max) tRAD<=tRAD(max). Assumes that tRCD<=tRCD(max) tRAD>=tRAD(max). tOFF(max), tOEZ(max), tOFR(max) tWEZ(max) define time which output achieves open circuit condition referenced output voltage levels. times measured between VIL.
VIH(min) VIL(max) reference levels measuring timing input signals.Also transition Operation with tRCD(max) limit insures that tRAC(max) tRCD(max) specified
reference point only: tRCD greater than specified tRCD(max) limit, then access time controlled exclusively tCAC. Operation with tRAD(max) limit insures that tRAC(max) tRAD(max) specified reference point only: tRAD greater than specified tRAD(max) limit, then access time controlled exclusively tAA. tWCS, tRWD, tCWD, tAWD restrictive operating parameters. They included data sheet electrical characteristics only tWCS >=tWCS(min), cycle early write cycle data will remain open circuit (high impedance) throughout entire cycle tRWD>=tRWD(min), tCWD>=tCWD(min), tAWD>=tAWD(min) tCPW>=tCPW(min), cycle readmodify-write data output will contain data read from selected cell neither above sets conditions satisfied, condition data access time) indeterminate. These parameters referenced leading edge early write cycles leading edge delayed write read modify write cycle. tRASP defines pulse width extended data mode cycles. Access time determined longest among tAA, tCAC tACP. initial pause 100us required after power followed minimum eight initialization cycles (RAS only refresh cycle before refresh cycle). internal refresh counter used, minimum eight before refresh cycles required. delayed write read-modify-write cycles, must disable output buffer prior applying data device. Test mode operation specified this data sheet 2bits test function controlled control address CA0. This test mode operation performed WE-and-CAS-before-RAS (WCBR) refresh cycle. Refresh during test mode operation will performed normal read cycles WCBR refresh cycles. When state test bits accord each other, condition output data level. order this test mode operation, perform only refresh cycle CAS-before-RAS refresh cycle. test mode read cycle, value tRAC, tAA, tCAC, tOAC tACP delayed specified value. These parameters should specified test mode cycles adding above value specified value this data sheet.
Semicon
GM71C4403C
Either tRCH tRRH must satisfied. tRAS(min) tRWD(min) tRWL(min) Read Modify Write cycle. tCAS(min) tCWD(min) tCWL(min) Read Modify Write cycle. tOFF tOFR determined later rising edge CAS. tCSH(min) achieved when tRCD tCSH(min) tCAS(min). Hi-Z control rising edge disables data outputs. When goes high during high, data will come until next access. When goes during high, data will come until next access. tHPC(min) achieved during series mode write cycles mode read cycles. both write read operation mixed mode cycle(EDO mode cycle (1),(2) minimum value cycle (tCAS 2tT) becomes greater than specified tHPC(min) value.The value cycle time mixed mode shown mode cycle (2).
Semicon
GM71C4403C
Unit: Inches (mm)
Package Dimension
(26)
0.025(0.63) 0.305(7.75) 0.340(8.64) 0.295(7.49) 0.330(8.38)
0.660(16.76) 0.680(17.27)
0.260(6.60)
0.275(6.99) 0.008(0.20)
0.085(2.16)
0.128(3.25) 0.148(3.76) 0.050(1.27) 0.015(0.38) 0.021(0.53) 0.026(0.66) 0.036(0.91)
(26) TSOP (TYPE
0.308(7.82) 0.292(7.42)
0.012(0.30) 0.028(0.70)
0.009(0.22) 0.667(16.94) 0.690(17.54) 0.041(1.03) 0.048(1.23) 0.012(0.30) 0.020(0.50) 0.050(1.27) 0.001(0.03) 0.009(0.23)
0.371(9.42)
0.355(9.02)
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