16384-word 4-bit Fully Decoded Random Access Memory HM100494/HM101494

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16384-word 4-bit Fully Decoded Random Access Memory HM100494/HM101494

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HM100494/HM101494 Series
16384-word 4-bit Fully Decoded Random Access Memory HM100494/HM101494 100K compatible, 16384-word 4-bit read/write random access memory developed high speed systems such scratch pads control/buffer storage.
Arrangement
VCCA
Features
16384 4-bits organization Fully compatible with 100K level Address access time: 8/10/12 (max) Write pulse width: 5/6/8 (min) power dissipation: 100K: (typ) 101K(10/12 ns): (typ) 101K(8 ns): (typ) Output obtainable wired-OR (open emitter)
Ordering Information
Type HM100494JP-10 HM100494JP-12 HM101494JP-8 HM101494JP-10 HM101494JP-12 HM101494-10 HM101494-12 HM101494F-8 Access time 400-mil 28-pin cerdip (DG-28N) 28-pin ceramic flat (FG-28D) Package 300-mil 28-pin plastic (CP-28DN)
(Top view)
Description
name VCC/VCCA Function Address input Data input Data output Write enable Chip select Ground Supply voltage
HM100494, HM101494 Series
Block Diagram
HM100494, HM101494 Series
Y-decoder/driver
X-decoder/driver
Memory cell array 16384 words bits
Block
Block
Block
Block
circuit
circuit
circuit
circuit
Function Table
Input
Output Dout*2 Mode selected Write Write Read
Notes: Irrelevant Read noninvert
HM100494, HM101494 Series
HM100494, HM101494 Series
Cerdip, ceramic flat
Absolute Maximum Ratings 125°C max*1, 25°C*2)
Parameter Supply voltage Input voltage Output current Power dissipation Operating temperature Storage temperature Storage temperature Notes: Symbol Iout Topr Tstg Tstg (Bias)*3 Rating +0.5 -7.0 +0.5 85*4 +125 +85*4
Rating +0.5 -7.0 +0.5 +150 +125 Unit
Cerdip, ceramic flat Under bias (VEE Vmin) Case temperature;
Characteristics (VEE -4.5 V*1, -5.2 V*2, -2.0 +85°C*1, +75°C*2, +75°C*2, flow exceeding m/sec)
Parameter Output voltage Symbol -1025 -1810 -1035 -1165 -1810 Supply current Supply current (10/12 Notes: -220 -200 -955 -1715 -880 -1620 -1610 -880 -1475 Unit VIHA Guaranteed input voltage High/low inputs VIHB VILA Test conditions VIHA VILB
Output threshold voltage VOHC
VOLC Input voltage
Input current
VILB
Others
inputs outputs open inputs outputs open
100K type 101K type SOJ, Ceramic flat Cerdip
HM100494, HM101494 Series
HM100494, HM101494 Series
Characteristics (VEE -4.5 5%*1, -5.2 5%*2, +85°C*1, +75°C*2, +75°C*2, flow exceeding m/sec)
Read Mode
HM101494-8 HM100494-10/12 HM101494-10/12
-------------
Parameter Chip select access time Symbol tACS
---------------
10/12 Unit Test conditions
Chip select recovery time tRCS Address access time
Write Mode
HM101494-8 HM100494-10/12 HM101494-10/12
-------------
Parameter Write pulse width Data setup time Data hold time Address setup time Address hold time Chip select setup time Chip select hold time Write disable time Write recovery time Symbol tWSD tWHD tWSA tWHA tWSCS tWHCS
---------------
12/14 Unit Test conditions tWSA tWSA
Rise/Fall Time
Parameter Output rise time Output fall time Notes: Symbol Unit Test conditions
100K type 101K type SOJ, Ceramic flat Cerdip
HM100494, HM101494 Series
Capacitance (SOJ)
Parameter Input capacitance Symbol Output capacitance Cout
HM100494, HM101494 Series
Unit Test condition Others
Capacitance (Cerdip, Ceramic Flat)
Parameter Input capacitance Symbol Output capacitance Cout Unit Test condition DI1, Others
Test Circuit Waveforms
Loading Condition
Test circuit (GND) Dout M.U.T. 0.01
-2.0 (Includes probe capacitance)
Notes: 10/12
HM100494, HM101494 Series
Input Pulse
HM100494, HM101494 Series
Read Mode
Write Mode
Address
tWHD
tWSD tWSA
tWHA tWHCS
Dout
tWSCS

16384-word 4-bit Fully Decoded Random Access Memory HM100494/HM101494

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