N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY rDS(on)

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N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY rDS(on)

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Si6954ADQ
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
rDS(on)
0.053 0.075
TSSOP-8
View N-Channel MOSFET N-Channel MOSFET
Si6954ADQ
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
Tstg
secs
0.83 0.96
Steady State
Unit
0.69 0.83 0.53
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes Surface Mounted Board. Document Number: 71130 S-00013-Rev. 24-Jan-00 www.siliconix.com FaxBack 408-970-5600 Steady State Steady State
Symbol
RthJA RthJF
Typical
Maximum
Unit
_C/W
Si6954ADQ
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.83 0.044 0.062 0.053 0.075
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) 0.83 di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C -55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-00013-Rev. 24-Jan-00
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.15 DS(on) On-Resistance
Capacitance
Capacitance (pF)
0.12
Ciss
0.09 0.06
Coss Crss
0.03
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
150_C Source Current DS(on) On-Resistance 0.15
On-Resistance Gate-to-Source Voltage
0.12
0.09
0.06
25_C
0.03
Source-to-Drain Voltage
Gate-to-Source Voltage
Document Number: 71130 S-00013-Rev. 24-Jan-00
www.siliconix.com FaxBack 408-970-5600
Si6954ADQ
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
-0.0 Power
Single Pulse Power, Junction-to-Ambient
GS(th) Variance
-0.2
-0.4
-0.6
-0.8
10-3
10-2
10-1
Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle
Normalized Effective Transient Thermal Impedance
Notes:
0.05
0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
Duty Cycle,
Unit Base RthJA 126_C/W PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle
Normalized Effective Transient Thermal Impedance
0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
www.siliconix.com FaxBack 408-970-5600
Document Number: 71130 S-00013-Rev. 24-Jan-00

N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY rDS(on)

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