Build Biasing Circuit VHF/UHF Amplifier ADE-208-697A 2nd. Edition

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Build Biasing Circuit VHF/UHF Amplifier ADE-208-697A 2nd. Edition

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BB303M
Build Biasing Circuit VHF/UHF Amplifier
ADE-208-697A 2nd. Edition Nov. 1998 Features
Build Biasing Circuit; reduce using parts cost board space. High forward transfer admittance; (|yfs| typ. kHz) Withstanding ESD; Build absorbing diode. Withstand 250V C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4 (SOT-143 var.)
Outline
MPAK-4
Source Gate1 Gate2 Drain
Notes: Marking "CW-". BB303M individual type number HITACHI BBFET.
BB303M
Absolute Maximum Ratings 25°C)
Item Drain source voltage Gate1 source voltage Gate2 source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VG1S VG2S Tstg Ratings +150 Unit
BB303M
Electrical Characteristics 25°C)
Item Symbol +100 +100 Unit Test Conditions 200µA VG1S VG2S +10µA VG2S +10µA VG1S VG1S VG2S VG2S VG1S VG2S 100µA VG1S 100µA VG2S 470k VG2S 470k, 1kHz VG2S =4V, 470k 1MHz VG2S =4V, 470k Noise figure Power gain 16.5 200MHz VG2S =4V, 470k Noise figure 2.85 900MHz Drain source breakdown voltage V(BR)DSS Gate1 source breakdown voltage Gate2 source breakdown voltage Gate1 source cutoff current Gate2 source cutoff current Gate1 source cutoff voltage Gate2 source cutoff voltage Drain current Forward transfer admittance V(BR)G1SS V(BR)G2SS G1SS G2SS VG1S(off) VG2S(off) D(op) |yfs|
Input capacitance Output capacitance Reverse transfer capacitance Power gain
0.025
0.05
BB303M
Main Characteristics
Test Circuit Operating Items D(op) |yfs|, Ciss, Coss, Crss,
Gate Gate
Drain
Source
Power Gain, Noise Figure Test Circuit
1000p
1000p
1000p
1000p
1000p
BBFET 1000p
1000p 1SV70 470k
1SV70
1000p Unit@ Resistance@ Capacitance@
Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 10mm, 2Turns Enameled Copper Wire,Inside 5mm, 2Turns
BB303M
900MHz Power Gain, Noise Test Circuit
Output
Input
C4`C6
Variable Capacitori10pF MAX) Disk Capacitori1000pF) Capacitori1000pF)
i1mm Copper wirej UnitFmm
RFCF1mm Copper wire with enamel 4turns inside
BB303M
Maximum Channel Power Dissipation Curve
Typical Output Characteristics
(mA)
(mW)
Channel Power Dissipation
Drain Current
(°C)
Ambient Temperature
Drain Source Voltage
(mA)
Drain Current Drain Source Voltage
VG2S
Drain Current Gate1 Source Voltage
(mA)
Drain Current
Drain Current
VG1S
VG2S
Drain Source Voltage
Gate1 Source Voltage
VG1S
BB303M
Drain Current Gate2 Source Voltage
(mA)
Drain Current Gate1 Voltage VG2S
(mA) Drain Current
Drain Current
Gate2 Source Voltage
VG2S
Gate1 Voltage
Drain Current Gate1 Current
(mA)
VG2S
Gate1 Current Gate1 Source Voltage
Drain Current
Gate1 Current
VG2S
Gate1 Current
Gate1 Source Voltage
BB303M
Gate1 Current Gate2 Source Voltage
Forward Transfer Admittance (mS)
Forward Transfer Admittance Drain Current
Gate1 Current
VG2S
Gate2 Source Voltage
Drain Current (mA)
Forward Transfer Admittance (mS)
Forward Transfer Admittance Gate1 Voltage
Power Gain (dB)
Power Gain Gate Resistance
VG2S
Gate Resistance
Gate1 Voltage
BB303M
Noise Figure Gate Resistance variable Power Gain Drain Current
Noise Figure (dB)
Gate Resistance
Power Gain (dB)
Drain Current (mA)
Noise Figure Drain Current variable
Power Gain Gate Resistance
Noise Figure (dB)
Power Gain (dB)
Gate Resistance
Drain Current (mA)
BB303M
Noise Figure Gate Resistance Power Gain Drain Current
Noise Figure (dB)
Power Gain (dB)
variable
Gate Resistance
Drain Current (mA)
Noise Figure Drain Current Gain Reduction (dB)
Gain Reduction Gate2 Source Voltage
Noise Figure (dB)
variable
Drain Current (mA)
Gate2 Source Voltage
BB303M
Gain Reduction Gate2 Source Voltage
Drain Current Gate Resistance
Gain Reduction (dB)
Drain Current (mA)
Gate2 Source Voltage
Gate Resistance
Input Capacitance Gate2 Source Voltage
Input Capacitance Ciss (pF)
Gate2 Source Voltage
BB303M
Parameter Frequency
-1.5 -120° -90° -60° 180° 150°
Parameter Frequency
120°
Scale: div.
-150°
-30°
Test Condition 1000 step)
Test Condition 1000 step)
Parameter Frequency
120°
Parameter Frequency
Scale: 0.002 div.
150°
180°
-150° -30° -120° -90° -60° -1.5
Test Condition 1000 step)
Test Condition 1000 step)
BB303M
Sparameter (VDS VG2S 470k,
(MHz) 1000 0.947 0.978 0.973 0.960 0.956 0.939 0.930 0.905 0.889 0.870 0.855 0.841 0.826 0.812 0.799 0.788 0.778 0.765 0.763 0.748 -7.0 -11.9 -18.7 -23.8 -29.6 -35.5 -40.3 -45.7 -50.3 -55.6 -59.6 -63.9 -67.9 -71.8 -75.6 -78.9 -82.6 -85.8 -88.8 -92.2 4.11 4.13 4.04 4.01 3.90 3.85 3.68 3.63 3.45 3.35 3.22 3.10 3.02 2.89 2.78 2.70 2.60 2.48 2.41 2.34 174.4 167.1 159.8 152.7 146.4 139.9 133.6 128.3 122.7 116.6 111.5 106.3 101.4 96.1 91.8 87.5 82.2 78.1 74.2 69.7 0.00400 0.00305 0.00266 0.00384 0.00453 0.00440 0.00550 0.00571 0.00583 0.00634 0.00596 0.00591 0.00544 0.00533 0.00495 0.00470 0.00460 0.00445 0.00486 0.00502 89.0 116.5 75.5 66.8 70.1 59.6 67.2 59.0 54.2 51.6 56.2 55.7 54.9 57.2 64.6 66.5 75.1 83.8 97.0 102.6 0.985 0.985 0.982 0.978 0.970 0.965 0.957 0.949 0.940 0.932 0.924 0.917 0.908 0.900 0.893 0.887 0.880 0.874 0.869 0.864 -3.1 -6.8 -10.1 -13.5 -16.8 -20.0 -23.1 -26.2 -29.2 -32.1 -35.0 -37.7 -40.5 -43.1 -45.7 -48.1 -50.6 -52.9 -55.3 -57.5
BB303M
Package Dimensions (Unit:
0.65
0.95 0.95 0.05
0.05
0.16 0.06
0.05 0.95
0.05 0.85
1.1-
0.65-
Hitachi Code EIAJ JEDEC
MPAK-4 SC-61AA
BB303M
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
NorthAmerica http:semiconductor.hitachi.com/ Europe Asia (Singapore) Asia (Taiwan) Asia (HongKong) Japan further information write
Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1998. rights reserved. Printed Japan.

Build Biasing Circuit VHF/UHF Amplifier ADE-208-697A 2nd. Edition

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