Phototransistor Small Outline Surface Mount Optocoupler FEATURES
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IL215AT/216AT/217AT
Phototransistor Small Outline Surface Mount Optocoupler
FEATURES High Current Transfer Ratio, IF=1.0 IL215AT-20% Minimum IL216AT-50% Minimum IL217AT-100% Minimum Isolation Voltage, 3000 VRMS Electrical Specifications Similar Standard Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available only Tape Reel Option (Conforms Standard RS481A) Compatible with Dual Wave, Vapor Phase Reflow Soldering Underwriters File #E52744 (Code Letter 0884 Available with Option
Dimensions inches (mm) .120±.005 (3.05±.13) .240 (6.10) .192±.005 (4.88±.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode .154±.005 Cathode (3.91±.13) .016 (.41) .015±.002 (.38±.05) .008 (.20) Base Collector Emitter
.058±.005 (1.49±.13) .125±.005 (3.18±.13) Lead Coplanarity ±.0015 (.04) max.
max. R.010 (.25) max.
.020±.004 (.51±.10) plcs.
DESCRIPTION IL215AT/216AT/217AT optically coupled pairs with Gallium Arsenide infrared silicon phototransistor. Signal information, including level, transmitted device while maintaining high degree electrical isolation between input output. IL215AT/ 216AT/217AT comes standard SOIC-8 small outline package surface mounting which makes ideally suited high density applications with limited space. addition eliminating throughholes requirements, this package conforms standards surface mounted devices. high input current designed power consumption requirements such CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage. Continuous Forward Current Power Dissipation 25°C Derate Linearly from 25°C mW/°C Detector Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage ICMAX ICMAX (t<1.0 Power Dissipation Derate Linearly from 25°C mW/°C Package Total Package Dissipation 25°C Ambient (LED Detector). Derate Linearly from 25°C mW/°C Storage Temperature. -55°C +150°C Operating Temperature -55°C +100°C Soldering Time 260°C sec.
Characteristics TA=25°C
Parameter Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage BVCEO BVECO Dark Current, Collector-Emitter Capacitance, Collector-Emitter Package Current Transfer Ratio IL215AT IL216AT IL217AT Saturation Voltage, Collector-Emitter Isolation Test Voltage Capacitance, Input Output Resistance, Input Output Switching Time CTRDC VRMS Symbol Min. Typ. Max. Unit Condition
IF=1.0mA VR=6.0 VR=0 IC=10
IE=10
ICEOdark
VCE=10 IF=0 VCE=0
IF=1.0 VCE=5.0
VCEsat
3000
IF=1.0 IC=0.1
sec.
ton, toff
IC=2.0 RL=100 VCC=10
2001 Infineon Technologies Corp. Optoelectronics Division Jose, www.infineon.com/opto 1-888-Infineon (1-888-463-4636) 2-114 April 2000-19
Figure Forward voltage versus forward current
Forward Voltage Forward Current 100°C -55°C 25°C
Figure Collector-base photocurrent versus current
1000 Collector-base Current Current TA=25°C Vcb=9.3
Figure Normalized non-saturated saturated CTRCE versus current
Normalized CTRce Normalized Vce=10 IF=10 TA=25°C
Figure Collector-emitter leakage current versus temperature
Iceo Collector-Emitter 10-1 10-2
Vce=5V
TYPICAL
Vce=0.4 Current
Ambient Temperature
Figure Collector-emitter current versus current
25°C
Figure Normalized saturated versus base current temperature
NHFE(sat) Normalized Saturated Base Current 1000 25°C 70°C 50°C Normalized Ib=20 Vce=10 TA=25°C
Collector-emitter Current
Current
Figure Normalized collector-base photocurrent versus current
Nlcb Normalized
Figure Normalized non-saturated saturated CTRce versus current
NCTRce Normalized CTRce Current Normalized TA=25°C Vce=5 IF=1
Normalized Vcb=9.3 IF=1.0 TA=25°C
Current
2001 Infineon Technologies Corp. Optoelectronics Division Jose, www.infineon.com/opto 1-888-Infineon (1-888-463-4636) 2-115
IL215AT/216AT/217AT April 2000-19
Figure Normalized non-saturated saturated collector-emitter current current
NIce Normalized Normalized TA=25°C Vce=5V IF=1 Vce=5 Vce=.4
Figure high propagation delay current load resistor
tpLH Low-High Propagation Delay
TA=25°C, Vcc=5 Vth=1.5
Current
Figure Normalized collector-base photocurrent current
NIcb Normalized Normalized TA=25°C Vce=5V IF=1
Figure Normalized non-saturated base current temperature
NHFE Normalized 70°C 50°C 25°C -20°C Normalized Ib=20 Vce=10 TA=25°C
Current
1000
Base Current
1000
Figure Collector-base photocurrent current
1000 Collector-base photocurrent Current 1000 TA=25°C Vcb=9.3
Figure Typical switching characteristics base resistance (saturated operation) Figure Typical switching times load resistance
Input: =10mA Pulse width=100 Duty cycle=50%
1000 Input: IF=10 Pulse width=100 Duty cycle=50%
Switching time (µS)
Switching time (µs)
100K 500K
Base-emitter resistance,
Load resistance
Figure High propagation delay current load resistor
tpHL High-Low Propagation Delay
Figure Switching time test schematic waveform
VCC=5
Input
Current TA=25°C Vcc=5V Vth=1.5
INPUT
tpdon tpdof
toff
VOUT
OUTPUT
2001 Infineon Technologies Corp. Optoelectronics Division Jose, www.infineon.com/opto 1-888-Infineon (1-888-463-4636) 2-116
IL215AT/216AT/217AT April 2000-19
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