Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impu

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Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impu

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GaAIAs-IR-Lumineszenzdiode (880 GaAIAs Infrared Emitter (880 1048A 1048B
Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impulsbelastbarkeit Gute spektrale Anpassung Vorderseitenmetallisierung: Aluminium Goldlegierung Lieferung: vereinzelt Folie
Features Chip size Very highly efficient GaAlAs High reliability High pulse handling capability Good spectral match silicon photodetectors
Frontside metallization: aluminum Backside metallization: gold alloy Delivery: diced foil Applications Light-reflection switches (max. kHz) Coin counters Sensor technology Discrete optocouplers
Anwendungen Lichtschranken Sensorik Diskrete Optokoppler Bestellnummer Ordering Code request request
Type 1048A 1048B
Beschreibung Description Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, aufgerauht Infrared emitting die, side cathode connection, surface frosted
2001-10-05
1048A, 1048B
Elektrische Werte (gemessen TO18-Bodenplatte ohne Verguss, Electrical values (measured TO18 header without resin, Bezeichnung Parameter Strahlung Wavelength peak emission Spektrale Bandbreite Imax, Spectral bandwidth Imax Sperrspannung Reverse voltage Schaltzeiten, 10%, Switching times, from from 10%, Durchlaspannung Forward voltage Gesamtstrahlungsflu Total radiant flux 1048A 1048B Symbol Symbol min. peak Wert Value typ. max. Einheit Unit
0.5/0.4
2001-10-05
1048A, 1048B
Mechanische Werte Mechanical values Bezeichnung Parameter Abmessungen aktiven Dimension active chip area Durchmesser Wafers Diameter wafer height Bondpad dimensions Symbol Symbol min. Wert Value typ. max. Einheit Unit
Bezeichnung Parameter Vorderseitenmetallisierung Metallization frontside Metallization backside Trennverfahren Dicing Verbindung Chip bonding
Wert Value Aluminium Aluminum Goldlegierung Gold alloy Sawing Kleben Epoxy bonding
2001-10-05
1048A, 1048B
Grenzwert (gemessen TO18-Bodenplatte ohne Verguss, 25°C) Maximum Ratings (measured TO18 header without resign, 25°C) Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Forward current Surge Current Symbol Symbol Tstg Wert Value 40.+100 40.+100 Einheit Unit
2001-10-05
1048A, 1048B
Relative Spectral Emission Forward Current, (VF) Single pulse,
OHR00877
OHR00881
1000
Radiant Intensity (IF) Single pulse,
(100mA)
OHR00878
Permissible Pulse Handling Capability duty cycle parameter
OHR00886
0.005 0.01 0.02 0.05
2001-10-05
1048A, 1048B
Chip Outlines
0.11 (0.0043)
(0.0157)
n-contact
0.21 (0.0083)
p-contact
GMOY6077
werden folgt angegeben: (inch) Dimensions specified follows: (inch).
Published OSRAM Opto Semiconductors GmbH Wernerwerkstrasse D-93049 Regensburg Rights Reserved. Attention please! information describes type component shall considered assured characteristics. Terms delivery rights change design reserved. technical requirements components contain dangerous substances. information types question please contact sales organization. Packing Please recycling operators known you. also help touch with your nearest sales office. agreement will take packing material back, sorted. must bear costs transport. packing material that returned unsorted which obliged accept, shall have invoice costs incurred. Components used life-support devices systems must expressly authorized such purpose! Critical components only used life-support devices systems with express written approval OSRAM critical component component used life-support device system whose failure reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain human life. they fail, reasonable assume that health user endangered.
2001-10-05

Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impu

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