IRF540, RF1S540SM 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs

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IRF540, RF1S540SM 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs

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ESIG ITUTE SUBST January 2002 Data ISheet IRF540
IRF540, RF1S540SM
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors. They advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17421.
Features
28A, 100V rDS(ON) 0.077 Single Pulse Avalanche Energy Rated Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER IRF540 RF1S540SM PACKAGE TO-220AB TO-263AB BRAND IRF540
RF1S540SM
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.
IRF540, RF1S540SM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRF540, RF1S540SM UNITS W/oC
Drain Source Breakdown Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Dissipation Derating Factor Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case Package Body 10s, Techbrief
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) td(ON) td(OFF) Qg(TOT) CISS COSS CRSS Measured From Contact Screw Center Measured From Drain Lead, (0.25in) from Package Center Modified MOSFET Symbol Showing Internal Devices Inductances
TEST CONDITIONS 250µA, (Figure VDS, 250µA 95V, Rated DSS, 150oC ID(ON) rDS(ON) MAX, (Figure ±20V 17A, (Figures 50V, (Figure 50V, 28A, 9.1, MOSFET Switching Times Essentially Independent Operating Temperature 10V, 28A, Rated Ig(REF) 1.5mA (Figure Gate Charge Essentially Independent Operating Temperature
0.060 1450
±100 0.077
UNITS
On-State Drain Current (Note Gate Source Leakage Current Drain Source Resistance (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
25V, 1MHz (Figure
Internal Source Inductance
Measured From Source Lead, (0.25in) From Header Source Bonding
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Free Operation RF1S540SM Mounted FR-4 Board with Minimum Mounting
1.25
oC/W oC/W oC/W
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.
IRF540, RF1S540SM
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Diode
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, 27A, (Figure 25oC, 28A, dISD/dt 100A/µs 25oC, 28A, dISD/dt 100A/µs
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure 25V, starting 25oC, 440µH, peak 28A.
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W)
0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1
NOTES: DUTY FACTOR: t1/t2 PEAK RECTANGULAR PULSE DURATION
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.
IRF540, RF1S540SM Typical Performance Curves
SINGLE PULSE RATED DRAIN CURRENT
Unless Otherwise Specified (Continued)
PULSE DURATION 80µs DUTY CYCLE 0.5%
DRAIN CURRENT
100µs
OPERATION THIS AREA LIMITED rDS(ON)
10ms
DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
ID(ON), ON-STATE DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%
VDS, DRAIN SOURCE VOLTAGE
175oC
25oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON), DRAIN SOURCE
RESISTANCE
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.
IRF540, RF1S540SM Typical Performance Curves
1.25 NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA
Unless Otherwise Specified (Continued)
3000 1MHz CISS CRSS COSS CISS
1.15 CAPACITANCE (pF)
2400
1.05
1800
0.95
1200 COSS CRSS
0.85
0.75
VDS, DRAIN SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
25oC 175oC
ISD, SOURCE DRAIN CURRENT
gfs, TRANSCONDUCTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
1000 PULSE DURATION 80µs DUTY CYCLE 0.5%
175oC 25oC
DRAIN CURRENT
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE
GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.
IRF540, RF1S540SM Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY)
Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
IRF540, RF1S540SM Rev.

IRF540, RF1S540SM 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs

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