Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impu
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GaAIAs-IR-Lumineszenzdiode (880 GaAIAs Infrared Emitter (880
Wesentliche Merkmale GaAlAs-LED sehr hohem Wirkungsgrad Hohe Hohe Impulsbelastbarkeit Gute spektrale Anpassung Anwendungen IR-Fernsteuerung Fernseh-, Rundfunkund Lichtdimmern Lichtschranken Sensorik Diskrete Optokoppler Type Bestellnummer Ordering Code Q62703-Q517 Package
Features Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match silicon photodetectors Same package
Applications remote control hifi sets, video tape recorder, dimmers Light-reflection switches (max. kHz) Coin counters Sensor technology Discrete optocouplers
plan, klares violettes Epoxy-Gie- harz, 2.54-mm-Raster (1/10''), Anodenkennzeichnung: Anschlu package plane, violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 (1/10''), anode marking: short lead
2000-01-01
OPTO SEMICONDUCTORS
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- Lagertemperatur Operating storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, Surge current Verlustleistung Power dissipation freie max. Thermal resistance, lead length between package bottom PC-board max. Kennwerte Characteristics Bezeichnung Parameter Strahlung Wavelength peak emission Spektrale Bandbreite Imax, Spectral bandwidth Imax Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktiven Dimension active chip area Abstand Distance chip front case surface Symbol Symbol peak Wert Value Einheit Unit Symbol Symbol Wert Value Einheit Unit
Top; Tstg IFSM Ptot RthJA
0.09
Grad deg.
2000-01-01
OPTO SEMICONDUCTORS
Kennwerte Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value 0.6/0.5 Einheit Unit
Schaltzeiten, 10%, Switching times, from from 10%, Capacitance Durchlaspannung Forward voltage Sperrstrom Reverse current Gesamtstrahlungsflu Total radiant flux Temperaturkoeffizient bzw.
1.8) 3.8) 0.01
Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient peak, Temperature coefficient peak,
0.25
mV/K nm/K
2000-01-01
OPTO SEMICONDUCTORS
Achsrichtung gemessen einem Raumwinkel 0.01 Radiant Intensity Axial Direction solid angle 0.01 Bezeichnung Parameter Radiant intensity Radiant intensity Symbol Wert Value Einheit Unit
mW/sr
typ.
mW/sr
2000-01-01
OPTO SEMICONDUCTORS
Relative Spectral Emission Radiant Intensity (IF) Single pulse,
(100mA)
OHR00878
Max. Permissible Forward Current
OHR00877
(TA)
OHR00880
1000
Forward Current, (VF) Single pulse,
OHR00881
Permissible Pulse Handling Capability duty cycle parameter
OHR00886
Forward Current Lead Length between Package Bottom PC-Board (I),
OHR00949
0.005 0.01 0.02 0.05
Radiation Characteristics
OHR01894
2000-01-01
OPTO SEMICONDUCTORS
Package Outlines
Area flat
2.54 spacing
Cathode
Chip position
GEX06308
wenn nicht anders angegeben Dimensions unless otherwise specified.
2000-01-01
OPTO SEMICONDUCTORS
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