PRODUCT INFORMATION RMPA1956-103 power amplifier AMPS, CDMA CDMA2000-1
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RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION RMPA1956-103 power amplifier AMPS, CDMA CDMA2000-1X personal communications system (PCS) applications. operates over both Cellular bands. internally matched ohms minimize external components. Advanced power management reduces current consumption during peak phone usage backed-off power levels. High power-added efficiency excellent linearity achieved using Raytheon Components' Heterojunction Bipolar Transistor (HBT) technology. Single positive-supply operation power-down mode. Operates Cellular bands power-added efficiency CDMA average output power. Compact package- mm3. matched blocked input/output. Advanced Power Management
Features
Absolute Ratings1
Parameter
Supply Voltages Band Select Voltage Power Control Voltage Input Power Case Operating Temperature Storage Temperature
Symbol
Vcc, Vapc Tstg
Units
Electrical Characteristics2
Parameter
Cellular Band Typical
Band Typical Units
1850 1850 -135 -135 1910 1910 dBm/Hz dBm/Hz
Operating Frequency Operating Frequency Gain Po=28 Gain Po=28 Linear Power Output Linear Power Output CDMA/CDMA2000-1X CDMA/CDMA2000-1X AMPS PAE,Pout=-31dBm AMPS PAE,Pout=-31dBm CDMA ACPR133 CDMA ACPR1 CDMA ACPR244 CDMA ACPR2 CDMA2000-1X ACPR1 CDMA2000-1X ACPR1 CDMA2000-1X ACPR2 CDMA2000-1X ACPR2 Noise Power (Po28dBm) -135 Noise Power (Po28dBm) -135 Stability (all spurious)55 Stability (all spurious) Harmonics 28dBm) Harmonics 28dBm) 2fo, 3fo, 2fo, 3fo, Power Shutdown Current66 Power Shutdown Current Input VSWR ohms) 2.0:1 Input VSWR ohms) 2.0:1 Case Operating Temp. Case Operating Temp.
2.0:1 2.0:1
Notes: permanent damage with only parameter extreme limit. Other parameters typical values. parameters =+25°C, =+3.5V, f=1880 f=836.5 MHz, load VSWR 1.2:1. Vcc=3.5V; CDMA Waveform measured using ratio average power within 1.23 channel average power within bandwidth 1.25 offset f=1880 MHz. Vcc=3.5V; CDMA Waveform measured using ratio average power within 1.23 channel average power within bandwidth offset f=836.5 Vcc=3.5V; CDMA Waveform measured using ratio average power within 1.23 channel average power within bandwidth 2.25 offset 1880 MHz. Vcc=3.5V; CDMA Waveform measured using ratio average power within 1.23 channel average power within bandwidth 1.98 offset 836.5 Output VSWR 6:1, phase angles. applied signal. Vcc=+3.5V nominal, Vapc=+0.2V maximum.
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Figure Package Outline
Figure Pinout Packaged Product
View
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Figure Package Pinout
Signal Section Name Cell
Description Input Cell blocked; maximum input Input blocked; maximum input Cell Output Cell blocked Output blocked Cell Supply Final Stage Collector Power Cellular Supply Final Stage Collector Supply Control Circuitry These three Power signals tied together phone. Signal Ground Ground Control Vapc Band Switching Analog Power Control
1,6,9, 14,17
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Figure Evaluation Board Layout
RMPA 1956
Item
G857345-1 G657342-1 C321EDKSR1A335W
Description Vendor Board Raytheon Conn. Johnson Terminals Samtec RMPA1956 Raytheon 3.3uF Capacitor
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Figure Electrical Specifications
Recommended Operating Conditions Parameter Supply Voltage Input Power (either band) CDMA Output Power Range Band Switch Voltage Analog Power Control
Symbol Vcc, Pout Vapc
Typical
Units
Notes: Typical input power CDMA Pout +28dBm.
Figure Operational Control
Band Power Cell Cell Shutdown
3.5V 3.5V 3.5V 3.5V 3.5V
Vapc 2.6V 2.0V 2.6V 2.0V
>2.0V >2.0V
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 Band Vcc=3.5V, Vapc=2.6V, f=1880 MHz, CDMA
ACPR1,2 (dBc)
ACPR1
ACPR2
Pout (dBm)
RMPA1956 Band Vcc=3.5V, Vapc=2.6V, f=1880 MHz, CDMA
27.5 26.5
Gain (dB)
25.5 24.5
Gain
23.5 Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 CELL Band Vcc=3.5V, Vapc=2.6V @836.5MHz, CDMA
ACPR1,2 (dBc)
ACPR1
Pout (dBm)
ACPR2
RMPA1956 CELL Band, CDMA Vcc=3.5V, Vapc=2.6V, f=836.5MHz, CDMA
Gain (dB)
Raytheon Components Lowell Street Andover, 01810
Gain
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 CDMA2000-1X Gain Vcc=3.5V, Vapc=2.6V, 1880
Gain
Gain (dB)
Pout (dBm)
RMPA1956 CDMA2000-1X ACPR1&2 Vcc=3.5V, Vapc=2.6V, f=1880
ACPR1,2 (dBc)
ACPR1 ACPR2
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 CDMA2000-1X Gain Vcc=3.5V, Vapc=2.6V, f=836.5MHz
Gain (dB)
Gain
Pout (dBm)
RMPA1956 CDMA2000-1X ACPR1&2 Vcc=3.5, Vapc=2.6V, f=836.5MHz
ACPR1,2 (dBc)
ACPR1
ACPR2
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 Power Control Exploded View Itotal Vapc
Total Current Drain
Vapc=2.4V
0.15
Vapc=2.2 Vapc=2
Vapc=1.7V Vacp=1.5V Vapc=1.2V
0.05
Pout (dBm)
RMPA1956 cellular Power Control Exploded View Total Current Drain Vapc
Total Current Drain
Vapc=2.4V
0.15
Vapc=2.2 Vapc=2
Vapc=1.7V Vacp=1.5V Vapc=1.2V
0.05
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 Cellular ACPR Vapc
ACPR1,2 (dBc)
ACPR1
Vapc=2.6V
Vapc=2.2
ACPR2
Vapc=2.4V Vapc=2V
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
RMPA1956 Total Current Drain Vapc Cellular Band Vcc=3.5 f=836.5 MHz, CDMA Vapc =1.2 Vapc=1.7 Vapc=2.6
Total Current Drain (mA)
Pout (dBm)
Vapc =1.2
RMPA1956 ACPR Vapc Cellular Vcc=3.5V, f=836.5 MHz, CDMA Vapc=1.7 Vapc=2.6
ACPR1,2 (dBc)
Pout (dBm)
ACPR1
ACPR2
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Vapc =1.3
RMPA1956 Total Icurrent Drain Vapc Vcc=3.5 f=1880 MHz, CDMA Vapc=1.7 Vapc=2.6
Total Current Drain (mA)
Pout (dBm)
RMPA1956 ACPR Vapc Vcc=3.5 f=1880 MHz, CDMA
Vapc =1.3 Vapc=1.7 Vapc=2.6
ACPR1,2 (dBc)
ACPR1
ACPR2
Pout (dBm)
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION
Application Information
Precautions Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures ensure clean devices PCBs. Devices should remain their original packaging until component placement ensure contamination damage ground contact areas. Device Cleaning: Standard board cleaning techniques should present device problems provided that boards properly dried remove solvents water residues. Static Sensitivity: Follow precautions protect against damage: properly grounded static-dissipative surface which place devices. Static-dissipative floor mat. properly grounded conductive wrist strap each person wear while handling devices. General Handling: Handle package with vacuum collet along edges with sharp pair bent tweezers. Avoiding damaging ground contacts package bottom. apply excessive pressure lid. Device Storage: Devices supplied heat-sealed, moisture-barrier bags. this condition, devices protected require special storage conditions. Once sealed been opened, devices should stored nitrogen environment. Device Usage: Raytheon recommends following procedures prior assembly. Dry-bake devices 125°C hours minimum. Note: shipping trays cannot withstand 125°C baking temperature. Assemble dry-baked devices within days removal from oven. During 7-day period, devices must stored environment less than relative humidity maximum temperature 30°C 7-day period environmental conditions have been exceeded, then dry-bake procedure must repeated. Solder Materials Temperature Profile: Reflow soldering preferred method attachment. Hand soldering recommended. Reflow Profile Ramp-up: During this stage solvents evaporated from solder paste. Care should taken prevent rapid oxidation paste slump) solder bursts caused violent solvent out-gassing. typical heating rate 2°C/sec. Pre-heat/soak: soak temperature stage serves purposes; flux activated board devices achieve uniform temperature. recommended soak condition 120-150 seconds 150°C.
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
RMPA1956-103 Dual Band Tri-Mode AMPS, CDMA CDMA2000-1X Power Amplifier Module
PRODUCT INFORMATION Reflow Zone: temperature high, then devices damaged mechanical stress thermal mismatch there problems excessive solder oxidation. Excessive time temperature enhance formation inter-metallic compounds lead/board interface lead early mechanical failure joint. Reflow must occur prior flux being completely driven off. duration peak reflow temperature should exceed seconds. Maximum soldering temperatures should range 215-220°C, with maximum limit 225°C. Cooling Zone: Steep thermal gradients give rise excessive thermal shock. However, rapid cooling promotes finer grain structure more crack-resistant solder joint. illustration below indicates recommended soldering profile. Solder Joint Characteristics: Proper operation this device depends reliable voidfree attachment heatsink PWB. solder joint should void-free consistent thickness. Rework Considerations: Rework device attached board limited reflow solder with heat gun. device should subjected more than 225°C reflow solder molten state more than seconds. more than rework operations should performed.
Application Information (Cont)
Recommended Solder Reflow Profile
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Specifications based most current latest revision. Revised February 2003 Page
Raytheon Components Lowell Street Andover, 01810
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