SDRAM SODIMM MODULE MByte (64M SDRAM Unbuffered SODIMM PROFILE (1
|
|
|
Top Searches for this datasheet
64MX UNBUFFERED SDRAM SODIMM
SDRAM SODIMM MODULE
MByte (64M SDRAM Unbuffered SODIMM PROFILE (1.03 inch height)
This memory module high performance Megabyte Unbuffered synchronous dynamic module organized Small Outline Dual In-Line Memory Module (SODIMM) package. module utilizes eight 8Mx4X16 512MbitSDRAM1 devices TSOP package. Byte Serial EEPROM contains module configuration information. EEPROM configured customer's specifications. These modules offer substantial advances SDRAM operating performance, including ability synchronously burst data high rate with automatic column-address generation, interleave between internal banks order hide precharge time, capability randomly change column address each clock cycle during burst.
Features:
High density: Cycle time: (64M (100 MHz) (133 MHz) JEDEC Standard Unbuffered SDRAM SODIMM Pinout PC133 PC100 Compliant Single power supply 3.3V Serial Presence Detect LVTTL Compatible Clock Unbuffered Control Address Lines Auto Precharge handled SDRAM Devices Refresh rows every 64ms Programmable Burst Type, Burst Length Latency SDRAM Devices Internal Pipeline Operation Fully Synchronous signals registered positive edge system clock Package Height: 1.03 inches (+/- 10mils)
Based ELPIDA 512Mbit HM5257165B-75A Kentron Technologies, Inc. West Street Wilmington, 01887 Phone: (978) 988-9100 (978) 988-5550 www.kentrontech.com
UNBUFFERED SDRAM SODIMM
Operating Features:
SDRAM SODIMM utilizes clock input synchronization. Each operation SDRAM determined commands operations referenced positive clock edge. Latency defines delay from when Read Command registered rising clock edge when data from Read Command becomes available outputs. latency expressed terms clock cycles. This specific DIMM supports clock cycles. burst mode very high-speed access mode utilizing internal column address generator. Once column address first access set, following addresses automatically generated internal column address counter. control address signals supplied from chipset through unbuffered path SDRAMs. There clock signals supplied motherboard synchronize SODIMM.
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
UNBUFFERED SDRAM SODIMM
Absolute Maximum Ratings*: Item
Supply voltage (VCC Relative VSS) Input/Output Voltage Operating temperature Storage temperature Short circuit output current
Symbol
VI/O Topr Tstg Iout
Rating
-1.0 +4.6 -1.0 +4.6 +125
Unit
Permanent device damage occur absolute maximum ratings exceeded. Functional operation should restricted conditions detailed sections this data sheet. Exposure absolute maximum rating conditions extended periods affect device reliability.
Recommended Operating Conditions:
(Voltage referenced VCC.
Item
Supply voltage Input high voltage Input voltage Operating Temperature
Symbol
Min.
-0.3
Typ.
Max.
VDD+0.3
Unit
Capacitance:
(TA=25°C, Vcc=3.3V±0.3V)
Parameter Input capacitance (Address, /WE, CKE0,1 /CAS) Input capacitance /CS0~/CS1) Input capacitance (/DQMBs) Input capacitance (CK0, CK1) Input capacitance (/RAS) Input/Output capacitance (DQ0~DQ63, CB0~CB7)
Symbol CI/O
Max.
Unit
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
UNBUFFERED SDRAM SODIMM
Names:
CK0-CK3 CKE0 /RAS /CAS /CS0-/CS3 A0-A11 BA0, Clock Inputs Clock Enables Address Strobe Column Address Strobe Write Enable Chip Select Address Inputs SDRAM Bank Select Connect DQ0-DQ63 CB0-CB7 /DQMB0-/DQMB7 SA0-SA2 Data Inputs/Outputs Data Input/Output Data Mask Enables Power supply Ground Serial Clock Serial Data Input/Output Decode Input Write Protect
SDRAM Pinout:
Designation DQ32 DQ33 DQ34 DQ35 Designation DQ40 DQ41 DQ10 DQ42 DQ11 DQ43 Designation Designation A10/AP
DQ36 DQ37 DQ38 DQ39 DQMB0 DQMB4 DQMB1 DQMB5
DQ12 DQ44 DQ13 DQ45 DQ14 DQ46 DQ15 DQ47 CKE0
DQ16 DQ48 DQ17 DQ49 DQ18 DQ50 DQ19 DQ51 DQ20 DQ52 DQ21 DQ53 DQ22 DQ54 DQ23 DQ55
DQMB2 DQMB6 DQMB3 DQMB7 DQ24 DQ56 DQ25 DQ57 DQ26 DQ58 DQ27 DQ59
CKE1
DQ28 DQ60 DQ29 DQ61 DQ30 DQ62 DQ31 DQ63
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
UNBUFFERED SDRAM SODIMM
Characteristics:
(VDD 3.3V±.3V, VSS=0V, TA=0 70°C) Parameter
Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6
133MHz Max. 1320
100MHz Max. 1320
Unit
Operating current Burst, TCK=min. TRC=min. Single Bank) Precharge Standby Current (CKE=VIL, min. banks idle) (CKE=VIH, min. banks idle) Active Standby Current (CKE=VIL, min. bank active) (CKE=VIH, min. bank active) Burst Mode Current (tCK=min.) Refresh Current (per DIMM bank) (tCK=min., tRC=min., tRRD=min., Auto Refresh) Self Refresh Current (all DIMM banks, CKE=VIL)
Electrical Characteristics:
(TA=0°C +70°C, =3.3V±0.3V, =0V) Parameter active delay delay precharge time active time cycle time Last data precharge Last data Col. Address delay Last data burst stop Column address column address delay Number valid output data (CL=3) (CL=2) Clock Cycle Time (CL=3) (CL=2) Clock Valid Output Delay (CL=3) (CL=2) Output Data Hold Time (CL=3) (CL=2) Clock High Pulse Width Clock Pulse Width Input Setup Time Input Hold Time Clock Output Low-Z
Symbol tRRD tRCD tRAS tRDL tCDL TBDL TCCD
133MHz Min. 67.5
133MHz Max.
120K
100MHz Min.
100MHz Max.
Unit
120K
TSLZ
Typical Actual values lower that Spec'Ed Values. Available select SDRAM devices/part numbers.
Page
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
UNBUFFERED SDRAM SODIMM
Clock Output High-Z
tSHZ
Functional Block Diagram:
DQMB0 DQMB1
LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 DQMB4 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 DQMB5 LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 DQMB6 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 loads loads SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D7 SDRAMS D0-D3 SDRAMS D4-D7 SDRAMS D0-D7, SDRAMS D0-D7, DQMB7
LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15
DQMB2 DQMB3
LDQM I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 UDQM I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 BA0-BAN A0-AN RAS# CAS# CKE0 CKE1
Serial Presence Detect (SPD)
ohms
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
UNBUFFERED SDRAM SODIMM
Part Numbers:
Part number* KT6464SSN0UBL-XX KT6464SSN3UBL-XX Configuration Height 1.03 1.03 Clock Speed 10ns (100 MHz) 7.5ns (133 MHz)
"XX" designation relates SDRAM manufacturer's device used production. Please contact Kentron Technologies more information.
Package Description:
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
UNBUFFERED SDRAM SODIMM
information forth herein considered proprietary information owned Kentron Technologies, Inc. information contain preliminary information subject change Kentron Technologies, Inc. without notice. Kentron Technologies assumes responsibility liability information contained herein. products described this document intended implantation direct life support applications where malfunction result direct physical harm injury persons. WARRANTIES KIND, INCLUDING LIMITED IMPLIED WARRANTIES MERCHANTABILITY FITNESS PARTICULAR PURPOSE, OFFERED THIS DOCUMENT. Kentron Technologies, Inc. Rights Reserved further information this product, please contact: Kentron Technologies, Inc. West Street Wilmington, 01887 Phone: 978/988-9100 978/988-5550 http://www.kentrontech.com
Kentron Technologies, Inc. (978) 988-9100 Rev. 4/02
Page
Other recent searches
SLLS594B - SLLS594B SLLS594B Datasheet
SCHS326 - SCHS326 SCHS326 Datasheet
OM9027SP1 - OM9027SP1 OM9027SP1 Datasheet
OM9029SP1 - OM9029SP1 OM9029SP1 Datasheet
OM9028SP1 - OM9028SP1 OM9028SP1 Datasheet
OM9030SP1 - OM9030SP1 OM9030SP1 Datasheet
HMC606 - HMC606 HMC606 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
