DUAL 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED: 3.9ns (TYP.) POWER

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

DUAL 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED: 3.9ns (TYP.) POWER

Datasheet Thumbnail

Top Searches for this datasheet

74V2G03
DUAL 2-INPUT OPEN DRAIN NAND GATE
HIGH SPEED: 3.9ns (TYP.) POWER DISSIPATION: 1µA(MAX.) 25°C HIGH NOISE IMMUNITY: VNIH VNIL (MIN.) POWER DOWN PROTECTION INPUTS OPERATING VOLTAGE RANGE: VCC(OPR) 5.5V IMPROVED LATCH-UP IMMUNITY ORDER CODES
PACKAGE SOT23-8L
SOT23-8L
DESCRIPTION 74V2G03 advanced high-speed CMOS DUAL 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. internal circuit composed stages including buffer output, which provide high noise immunity stable output. device can, with external pull-up resistor, used wired configuration. This device
74V2G03STR
also used driver other application requiring current sink. Power down protection provided inputs accepted inputs with regard supply voltage. This device used interface
CONNECTION LOGIC SYMBOLS
June 2003
74V2G03
INPUT EQUIVALENT CIRCUIT DESCRIPTION
SYMBOL NAME FUNCTION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Current Parameter Value -0.5 +7.0 -0.5 +7.0 -0.5 +150 Unit
IGND Ground Current Storage Temperature Tstg Lead Temperature sec)
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these conditions implied.
RECOMMENDED OPERATING CONDITIONS
Symbol dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise Fall Time (note (VCC 0.3V) (VCC 0.5V) Parameter Value Unit ns/V ns/V
from
74V2G03
SPECIFICATIONS
Test Condition Symbol Parameter High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current IO=50 IO=50 IO=50 IO=4 IO=8 5.5V 25°C Min. 0.7VCC 0.3VCC 0.36 0.36 0.25 Typ. Max. Value 85°C Min. 0.7VCC 0.3VCC 0.44 0.44 Max. 125°C Min. 0.7VCC 0.3VCC 0.55 0.55 Max. Unit
High Level Input Voltage Level Input Voltage Level Output Voltage
ELECTRICAL CHARACTERISTICS
Test Condition Symbol Parameter 3.3(*)
Value 25°C Min. Typ. Max. 85°C Min. Max. 10.0 125°C Min. Max. 10.0 11.0 Unit
(pF)
tPZL
Propagation Delay Time
5.0(**) 5.0(**) tPLZ Propagation Delay Time
(**)
Voltage range 3.3V 0.3V (**) Voltage range 5.0V 0.5V
74V2G03
CAPACITIVE CHARACTERISTICS
Test Condition Symbol Parameter Min. COUT Input Capacitance Output Capacitance Power Dissipation Capacitance (note 25°C Typ. Max. Value 85°C Min. Max. 125°C Min. Max. Unit
defined value IC's internal equivalent capacitance which calculated from operating current consumption without load. (Refer Test Circuit). Average operating current obtained following equation. ICC(opr) ICC/2
TEST CIRCUIT
15/50pF equivalent (includes probe capacitance) equivalent ZOUT pulse generator (typically
WAVEFORM: PROPAGATION DELAY (f=1MHz; duty cycle)
74V2G03
SOT23-8L MECHANICAL DATA
DIM. MIN. 0.35 0.90 0.00 0.90 0.22 0.09 2.80 2.60 1.50 1.95 0.55 13.7 MAX. 1.45 0.15 1.30 0.38 0.20 3.00 3.00 1.75 MIN. 35.4 35.4 110.2 102.3 59.0 25.6 76.7 21.6 TYP. MAX. 57.1 51.2 14.9 118.1 118.1 68.8
74V2G03
Tape Reel SOT23-xL MECHANICAL DATA
DIM. MIN. 3.13 3.07 1.27 3.23 3.17 1.37 12.8 20.2 14.4 3.33 3.27 1.47 0.123 0.120 0.050 0.153 0.153 0.127 0.124 0.054 0.157 0.157 13.0 MAX. 13.2 0.504 0.795 2.362 0.567 0.131 0.128 0.0.58 0.161 0.161 0.512 MIN. TYP. MAX. 7.086 0.519 inch
74V2G03
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2003 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com

DUAL 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED: 3.9ns (TYP.) POWER

Top Searches for this datasheet

Other recent searches