HIGH-VOLTAGE HIGH SIDE DRIVER HIGH VOLTAGE RAIL dV/dt IMMUNITY V/
|
|
|
Top Searches for this datasheet
L6387
HIGH-VOLTAGE HIGH SIDE DRIVER
HIGH VOLTAGE RAIL dV/dt IMMUNITY V/nsec FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: SOURCE, SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS PHASE WITH INPUTS DESCRIPTION L6387 high-voltage device, manufactured with BCD"OFF-LINE" technology. Driver structure that enables drive independent referenced Channel Power BLOCK DIAGRAM
Minidip ORDERING NUMBERS:
L6387D
L6387
IGBT. Upper (Floating) Section enabled work with voltage Rail 600V. Logic Inputs CMOS/TTL compatible ease interfacing with controlling devices.
BOOTSTRAP DRIVER
Vboot H.V. Cboot
DETECTION
DRIVER
LOGIC
LEVEL SHIFTER
DRIVER LOAD
D00IN1135
2001
L6387
ABSOLUTE MAXIMUM RATINGS
Symbol Vout Vboot Vhvg Vlvg dVout/dt Ptot Output Voltage Supply Voltage Floating Supply Voltage Upper Gate Output Voltage Lower Gate Output Voltage Logic Input Voltage Allowed Output Slew Rate Total Power Dissipation Junction Temperature Storage Temperature Parameter Value Vboot Vboot -0.3 +0.3 -0.3 +0.3 Unit V/ns
Note: immunity pins guaranteed 900V (Human Body Model)
CONNECTION
D97IN517
Vboot
THERMAL DATA
Symbol j-amb Parameter Thermal Resistance Junction Ambient Minidip Unit °C/W
DESCRIPTION
Name VOUT Vboot Type Lower Driver Logic Input Upper Driver Logic Input Voltage Power Supply Ground Side Driver Output Upper Driver Floating Reference High Side Driver Output Bootstrap Supply Voltage Function
circuit guarantees 0.3V maximum Isink 10mA). This allows omit "bleeder" resistor connected between gate source external MOSFET normally used hold low.
L6387
RECOMMENDED OPERATING CONDITIONS
Symbol Vout VbootVout Parameter Output Voltage Floating Supply Voltage Switching Frequency Supply Voltage Junction Temperature HVG,LVG load Test Condition Min. Note Note Typ. Max. Unit
Note condition Vboot Vout guaranteed, Vout range from 580V.
ELECTRICAL CHARACTERISTICS Operation (Vcc 15V; 25°C)
Symbol toff Parameter High/Low Side Driver Turn-On Propagation Delay High/Low Side Driver Turn-Off Propagation Delay Rise Time Fall Time Test Condition Vout Vout 600V 1000pF 1000pF Min. Typ. Max. Unit
OPERATION (Vcc 15V; 25°C)
Symbol Vccth1 Vccth2 Vcchys Iqccu Iqcc Rdson Parameter Supply Voltage Turn Threshold Turn Threshold Hysteresis Undervoltage Quiescent Supply Current Quiescent Current Bootstrap Driver Resistance Bootstrap Supply Voltage 600V 10µs) 10µs) 12.5V Test Condition Min. Typ. Max. Unit Supply Voltage Section
Bootstrapped supply Voltage Section IQBS Quiescent Current High Voltage Leakage Current High/Low Side Driver Source Short Circuit Current Sink Short Circuit Current Level Logic Threshold Voltage High Level Logic Threshold Voltage High Level Logic Input Current Level Logic Input Current Logic Inputs
RDSON tested following way: RDSON
(VCC VCBOOT1) (VCC VCBOOT2) I1(VCC,VCBOOT1) I2(VCC,VCBOOT2)
where current when VCBOOT VCBOOT1, when VCBOOT VCBOOT2.
L6387
Figure Typical Rise Fall Times Load Capacitance
time (nsec)
D99IN1054
Figure Quiescent Current Supply Voltage
(µA)
D99IN1055
(nF) both high side buffers @25°C Tamb
VS(V)
Input Logic L6387 Input Logic (17V) compatible. interlocking features offered (see truth table below) avoid undesired simultaneous turn both Power Switches driven. Table
Input Output
CEXT
Qgate Vgate
ratio between capacitors CEXT CBOOT proportional cyclical voltage loss CBOOT>>>CEXT e.g.: Qgate 30nC Vgate 10V, CEXT 3nF. With CBOOT 100nF drop would 300mV. supplied long time, CBOOT selection take into account also leakage losses. e.g.: steady state consumption lower than 200µA, 5ms, CBOOT supply CEXT. This charge capacitor means voltage drop internal bootstrap driver gives great advantages: external fast recovery diode avoided usually great leakage current). This structure work only VOUT close lower) meanwhile charging time (Tcharge CBOOT time which both conditions fulfilled long enough charge capacitor. bootstrap driver introduces voltage drop DMOS RDSON (typical value: Ohm). frequency this drop neglected. Anyway increasing frequency must taken account. following equation useful compute
BOOTSTRAP DRIVER bootstrap circuitry needed supply high voltage section. This function normally accomplished high voltage fast recovery diode (fig. 3a). L6387 patented integrated structure replaces external diode. realized high voltage DMOS, driven synchronously with side driver (LVG), with series diode, shown fig. internal charge pump (fig. provides DMOS driving voltage diode connected series DMOS been added avoid undesirable turn CBOOT selection charging: choose proper CBOOT value external seen equivalent capacitor. This capacitor CEXT related total gate charge
L6387
drop bootstrap DMOS: Vdrop IchargeRdson Vdrop Qgate Rdson Tcharge DMOS about Tcharge 5µs. fact: Vdrop 30nC 0.8V
where Qgate gate charge external power MOS, Rdson resistance bootstrap DMOS, Tcharge charging time bootstrap capacitor. example: using power with total gate charge 30nC drop bootstrap Figure Bootstrap Driver.
Vdrop taken into account when voltage drop CBOOT calculated: this drop high, circuit topology doesn't allow sufficient charging time, external diode used.
DBOOT
VBOOT H.V.
VBOOT H.V.
CBOOT VOUT LOAD
CBOOT VOUT LOAD
D99IN1056
Figure Turn Time Temperature
Figure Turn Time Temperature
(ns)
Toff (ns)
Typ.
Typ.
(°C)
(°C)
L6387
Figure Output Source Current Temperature
1000
Figure Output Sink Current Temperature
1000
current (mA)
Typ. current (mA)
Typ.
(°C)
(°C)
L6387
DIM. MIN. 3.18 7.95 0.51 1.15 0.356 0.204
TYP. 3.32 0.020 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 5.08 3.81 1.52 0.125 0.313 0.045 0.014 0.008 MAX. MIN.
inch TYP. 0.131 MAX.
OUTLINE MECHANICAL DATA
0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0.260 0.200 0.150 0.060
Minidip
L6387
DIM. MIN. 0.65 0.35 0.19 0.25
TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.026 0.014 0.007 0.010 0.004 MIN.
inch TYP. MAX. 0.069 0.010 0.065 0.033 0.019 0.010 0.020
OUTLINE MECHANICAL DATA
(typ.) 1.27 3.81 1.27 (max.) 0.15 0.016 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244
include mold flash protrusions. Mold flash potrusions shall exceed 0.15mm (.006inch).
L6387
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2001 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com
Other recent searches
XR21V1410 - XR21V1410 XR21V1410 Datasheet
V1412 - V1412 V1412 Datasheet
V1414 - V1414 V1414 Datasheet
V044ME01-LF - V044ME01-LF V044ME01-LF Datasheet
MPC801 - MPC801 MPC801 Datasheet
ENA1684 - ENA1684 ENA1684 Datasheet
DF20CA80 - DF20CA80 DF20CA80 Datasheet
AP2606GY - AP2606GY AP2606GY Datasheet
2N2905A - 2N2905A 2N2905A Datasheet
2N2907A - 2N2907A 2N2907A Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
