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N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TY
Top Searches for this datasheetSTP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 N-CHANNEL 500V 0.20 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 VDSS 500V 500V 500V RDS(on) <0.25 <0.25 <0.25 TYPICAL RDS(on) 0.20 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS D2PAK TO-220 TO-220FP (Tabless TO-220) DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDGR PTOT dv/dt(1) VISO Tstg August 2002 Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value STP(B)20NM50(-1) 12.6 --65 (1)ISD 20A, di/dt 400A/µs, V(BR)DSS, TJMAX. (*)Limited only maximum temperature allowed Unit STP20NM50FP 20(*) 12.6(*) 80(*) 0.36 2000 W/°C V/ns 1/12 width limited safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.20 Max. 0.25 Unit DYNAMIC Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 400V Gate Bias=0 Test Signal Level=20mV Open Drain Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1480 Max. Unit Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS. 2/12 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure Min. Typ. Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 25°C (see test circuit, Figure di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area TO-220 Safe Operating Area TO-220FP 3/12 Thermal Impedance TO-220 Thermal Impedance TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source Resistance 4/12 Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics 5/12 Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times 6/12 TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 Dia. P011C 7/12 D2PAK MECHANICAL DATA DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 8/12 TO-220FP MECHANICAL DATA DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 9/12 TO-262 (I2PAK) MECHANICAL DATA MIN. 2.49 1.14 0.45 1.23 8.95 13.1 3.48 1.27 TYP. MAX. 2.69 0.93 1.36 9.35 10.4 13.6 3.78 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. P011P5/E 10/12 FOOTPRINT TUBE SHIPMENT suffix)* TAPE REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE 1000 sales type 11/12 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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