N-CHANNEL 900V 1.55 TO-247 Zener-Protected PowerMESHTMIII MOSFET

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N-CHANNEL 900V 1.55 TO-247 Zener-Protected PowerMESHTMIII MOSFET

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STW7NC90Z
N-CHANNEL 900V 1.55 TO-247 Zener-Protected PowerMESHTMIII MOSFET
TYPE STW7NC90Z
VDSS
RDS(on)
TYPICAL RDS(on) 1.55 EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
DESCRIPTION third generation MESH OVERLAYPower MOSFETs very high voltage exhibits unsurpassed on-resistance unit area while integrating back-to-back Zener diodes between gate source. Such arrangement gives extra capability with higher ruggedness performance requested large variety single-switch applications. APPLICATIONS SINGLE-ENDED SMPS MONITORS, COMPUTER INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT VESD(G-S) dv/dt(1) Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=15K) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 1.28
Limited maximum temperature allowed
Unit W/°C V/ns
width limited safe operating area (1)ISD di/dt 100A/µs, (BR)DSS, JMAX.
2001
STW7NC90Z
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.78 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Rating Rating, ±20V Min. Typ. Max. Unit V/°C
BVDSS/TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 1.55 Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 2290 Max. Unit
STW7NC90Z
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING (RESISTIVE LOAD)
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 450V, (see test circuit, Figure 720V, Min. Typ. 58.8 Max. Unit
SWITCHING (INDUCTIVE LOAD)
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 720V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 150°C (see test circuit, Figure 7.14 Test Conditions Min. Typ. Max. Unit
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± (Open Drain) T=25°C Note(3) Min. Typ. Max. Unit 10-4/°C
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. (25°-T) BVGSO(25°)
PROTECTION FEATURES GATE-TO-SOURCE ZENER DIODES built-in back-to-back Zener diodes have specifically been designed enhance only device's capability, also make them safely absorb possible voltage transients that occasionally applied from gate souce. this respect Zener voltage appropiate achieve efficient cost-effective intervention protect device's integrity. These integrated Zener diodes thus avoid usage external components.
STW7NC90Z
Safe Operating Area Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STW7NC90Z
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STW7NC90Z
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW7NC90Z
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
STW7NC90Z
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2001 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

N-CHANNEL 900V 1.55 TO-247 Zener-Protected PowerMESHTMIII MOSFET

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