Dual Bias Resistor Transistors Silicon Surface Mount Transistors
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
Dual Bias Resistor Transistors
Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
(Bias Resistor Transistor) contains single transistor with monolithic bias network consisting resistors; series base resistor base-emitter resistor. These digital transistors designed replace single device external resistor bias network. eliminates these individual components integrating them into single device. NSBC114EPDXV6T1 series, complementary devices housed SOT-563 package which ideal power surface mount applications where board space premium.
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Simplifies Circuit Design Reduces Board Space Reduces Component Count Available inch Tape Reel Lead Free Solder Plating
SOT-563 CASE 463A PLASTIC
MAXIMUM RATINGS 25°C unless otherwise noted, common
minus sign (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO Value Unit mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction Storage Temperature FR-4 Minimum RqJA Tstg 25°C RqJA 25°C Symbol (Note (Note (Note (Note (Note (Note +150 Unit mW/°C °C/W
Specific Device Code (see table page Date Code
ORDERING INFORMATION
Device Package Shipping pitch 4000/Tape Reel pitch 8000/Tape Reel
NSBC114EPDXV6T1 SOT-563 NSBC114EPDXV6T5 SOT-563 Unit
Symbol
DEVICE MARKING INFORMATION
mW/°C °C/W
Preferred devices recommended choices future best overall value. specific marking information device marking table page this data sheet.
Semiconductor Components Industries, LLC, 2003
February, 2003 Rev.
Publication Order Number: NSBC114EPDXV6/D
NSBC114EPDXV6T1, NSBC114EPDXV6T5
DEVICE MARKING RESISTOR VALUES
Device NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 (Note NSBC143TPDXV6T1 (Note NSBC113EPDXV6T1 (Note NSBC123EPDXV6T1 (Note NSBC143EPDXV6T1 (Note NSBC143ZPDXV6T1 (Note NSBC124XPDXV6T1 (Note NSBC123JPDXV6T1 (Note Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 SOT-563 Marking (kW) (kW)
ELECTRICAL CHARACTERISTICS
25°C unless otherwise noted, common minus sign (PNP) omitted) Characteristic CHARACTERISTICS Collector-Base Cutoff Current (VCB Collector-Emitter Cutoff Current (VCE Emitter-Base Cutoff Current (VEB NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 ICBO ICEO IEBO 0.18 0.13 nAdc nAdc mAdc Symbol Unit
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note CHARACTERISTICS (Note Current Gain (VCE NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1
V(BR)CBO V(BR)CEO
0.25
Collector-Emitter Saturation Voltage NSBC113EPDXV6T1/NSBC123EPDXV6T1 NSBC114TPDXV6T1/NSBC143TPDXV6T1
VCE(sat)
resistor combinations. Updated curves follow subsequent data sheets. Pulse Test: Pulse Width Duty Cycle 2.0% Available upon request.
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
ELECTRICAL CHARACTERISTICS
25°C unless otherwise noted, common minus sign (PNP) omitted) Characteristic CHARACTERISTICS (Note Output Voltage (on) (VCC NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 NSBC144EPDXV6T1 NSBC113EPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC143ZPDXV6T1 NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 15.4 32.9 15.4 1.54 0.17 0.055 0.38 0.038 0.21 0.47 0.047 28.6 61.1 28.6 2.86 0.25 0.185 0.56 0.056 Symbol Unit
(VCC Output Voltage (off) (VCC (VCC 0.050 (VCC 0.25
Input Resistor
Resistor Ratio NSBC114YPDXV6T1 NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1
R1/R2
resistor combinations. Updated curves follow subsequent data sheets. Pulse Test: Pulse Width Duty Cycle 2.0% Available upon request.
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
POWER DISSIPATION (mW) RqJA 490°C/W AMBIENT TEMPERATURE (°C)
Figure Derating Curve
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC114EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB -25°C 25°C 75°C 1000 CURRENT GAIN (NORMALIZED) 75°C 25°C -25°C
0.01
0.001
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
25°C
75°C COLLECTOR CURRENT (mA) 0.01
25°C -25°C
CAPACITANCE (pF)
Vin, INPUT VOLTAGE (VOLTS)
REVERSE BIAS VOLTAGE (VOLTS)
0.001
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) -25°C 25°C 75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC114EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS IC/IB 1000 CURRENT GAIN (NORMALIZED)
-25°C 75°C 25°C
75°C 25°C -25°C
0.01
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
25°C
75°C
25°C -25°C
CAPACITANCE (pF)
COLLECTOR CURRENT (mA)
0.01
Vin, INPUT VOLTAGE (VOLTS)
REVERSE BIAS VOLTAGE (VOLTS)
0.001
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS)
-25°C 25°C 75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC124EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB -25°C 25°C 75°C 1000 hFE, CURRENT GAIN (NORMALIZED)
75°C 25°C -25°C
0.01
0.001
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
25°C
COLLECTOR CURRENT (mA) 0.01
75°C
25°C -25°C
CAPACITANCE (pF)
REVERSE BIAS VOLTAGE (VOLTS) 0.001 Vin, INPUT VOLTAGE (VOLTS)
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) -25°C 75°C 25°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC124EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB CURRENT GAIN (NORMALIZED) 1000
-25°C
25°C
75°C
25°C
-25°C
75°C
0.01
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
COLLECTOR CURRENT (mA) 25°C
75°C
25°C -25°C
CAPACITANCE (pF)
0.01 Vin, INPUT VOLTAGE (VOLTS)
REVERSE BIAS VOLTAGE (VOLTS)
0.001
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS)
-25°C
75°C
25°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC144EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB 1000 CURRENT GAIN (NORMALIZED)
75°C 25°C -25°C
-25°C 25°C 75°C
0.01
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
CAPACITANCE (pF)
COLLECTOR CURRENT (mA)
25°C
75°C 0.01
25°C -25°C
Vin, INPUT VOLTAGE (VOLTS)
REVERSE BIAS VOLTAGE (VOLTS)
0.001
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) -25°C 25°C 75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC144EPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB 1000 CURRENT GAIN (NORMALIZED) 75°C 25°C -25°C
-25°C 75°C
25°C
0.01
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
CAPACITANCE (pF) 25°C
0.01
75°C
25°C -25°C
REVERSE BIAS VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) -25°C 25°C 75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC114YPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB -25°C 25°C 75°C hFE, CURRENT GAIN (NORMALIZED) COLLECTOR CURRENT (mA) 75°C 25°C -25°C
0.01
0.001
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) 25°C
75°C COLLECTOR CURRENT (mA) 25°C
-25°C
Vin, INPUT VOLTAGE (VOLTS)
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) -25°C 25°C 75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC114YPDXV6T1 TRANSISTOR
VCE(sat) MAXIMUM COLLECTOR VOLTAGE (VOLTS) CURRENT GAIN (NORMALIZED) IC/IB -25°C 25°C 75°C COLLECTOR CURRENT (mA) 25°C -25°C
75°C
0.01
0.001
COLLECTOR CURRENT (mA)
Figure VCE(sat) versus
Figure Current Gain
CAPACITANCE (pF) REVERSE BIAS VOLTAGE (VOLTS) 25°C
75°C COLLECTOR CURRENT (mA) 25°C
-25°C
Vin, INPUT VOLTAGE (VOLTS)
Figure Output Capacitance
Figure Output Current versus Input Voltage
INPUT VOLTAGE (VOLTS) 25°C -25°C
75°C
COLLECTOR CURRENT (mA)
Figure Input Voltage versus Output Current http://onsemi.com
NSBC114EPDXV6T1, NSBC114EPDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS NSBC114TPDXV6T1
1000 HFE, CURRENT GAIN (NORMALIZED) 25°C 1000 HFE, CURRENT GAIN (NORMALIZED) 25°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
Figure Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS NSBC143TPDXV6T1
1000 HFE, CURRENT GAIN (NORMALIZED) 25°C 1000 HFE, CURRENT GAIN (NORMALIZED) 25°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
Figure Current Gain
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NSBC114EPDXV6T1, NSBC114EPDXV6T5 INFORMATION USING SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection
0.0118 0.45 0.0177 1.35 0.0531 0.0394
interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
0.0197 0.0197
SCALE 20:1 inches
SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS power dissipation SOT-563 function melting temperature solder higher than size. This vary from minimum size rated temperature device. When entire device soldering size given maximum power dissipaheated high temperature, failure complete soldering tion. Power dissipation surface mount device deterwithin short time could result device failure. Theremined TJ(max), maximum rated junction temperature fore, following items should always observed orof die, RqJA, thermal resistance from device minimize thermal stress which devices junction ambient, operating temperature, Ussubjected. values provided data sheet SOT-563 package, calculated follows: Always preheat device. delta temperature between preheat solderTJ(max) should 100°C less.* RqJA When preheating soldering, temperature leads case must exceed maximum temThe values equation found maximum perature ratings shown data sheet. When ratings table data sheet. Substituting these values using infrared heating with reflow soldering methinto equation ambient temperature 25°C, difference shall maximum 10°C. calculate power dissipation device which this case milliwatts. soldering temperature time shall exceed 260°C more than seconds. 150°C 25°C milliwatts When shifting from preheating soldering, maxi833°C/W temperature gradient shall less. After soldering been completed, device should 833°C/W SOT-563 package assumes allowed cool naturally least three minutes. recommended footprint glass epoxy printed cirGradual cooling should used forced cuit board achieve power dissipation milliwatts. cooling will increase temperature gradient There other alternatives achieving higher power disresult latent failure mechanical stress. sipation from SOT-563 package. Another alternative Mechanical stress shock should applied durwould ceramic substrate aluminum core cooling. board such Thermal Clad®. Using board material such Thermal Clad, aluminum core board, power dis* Soldering device without preheating cause excessipation doubled using same footprint. sive thermal shock stress which result damage device.
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
PACKAGE DIMENSIONS SOT-563, LEAD CASE 463A-01 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETERS MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. MILLIMETERS 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 0.08 0.18 0.10 0.30 1.50 1.70 INCHES 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 0.003 0.007 0.004 0.012 0.059 0.067
0.08 (0.003)
STYLE
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
STYLE
EMITTER EMITTER2 BASE COLLECTOR BASE COLLECTOR
STYLE
CATHODE CATHODE ANODE/ANODE CATHODE CATHODE ANODE/ANODE
STYLE
COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR
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NSBC114EPDXV6T1, NSBC114EPDXV6T5
Thermal Clad trademark Bergquist Company.
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NSBC114EPDXV6/D
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