N-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD4NS25 VD

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N-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD4NS25 VD

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STD4NS25
N-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET
TYPE STD4NS25
VDSS
RDS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED SUFFIX "T4" ORDERING TAPE REEL
DPAK TO-252 IPAK TO-251
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performance. patented STrip layout coupled with Company's proprietary edge termination structure, makes suitable coverters lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS TELECOM, INDUSTRIAL, LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value
di/dt300 A/µs, (BR)DSS, TjTjMAX
Unit W/°C V/ns
width limited safe operating area
February 2001
STD4NS25
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±20V Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions VGS, 250µA 10V, ID(on) RDS(on)max, Min. Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 29.5 Max. Unit
STD4NS25
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (see test circuit, Figure 200V, Min. Typ. Max. Unit
SWITCHING
Symbol td(Voff) tr(Voff) Parameter Turn-off- Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 125V, 4.7, (see test circuit, Figure Vclamp 200V, 4.7, (see test circuit, Figure Min. Typ. 10.5 21.5 Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 30V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedance
STD4NS25
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STD4NS25
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STD4NS25
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD4NS25
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.60 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 1.00 0.024 TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
STD4NS25
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD4NS25
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

N-CHANNEL 250V DPAK/IPAK MESH OVERLAYMOSFET TYPE STD4NS25 VD

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