Kbit (32Kb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPER

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Kbit (32Kb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPER

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M27W256
Kbit (32Kb Voltage EPROM EPROM
2.7V 3.6V SUPPLY VOLTAGE READ OPERATION ACCESS TIME: 70ns 3.0V 3.6V 80ns 2.7V 3.6V
COMPATIBLE with M27C256B POWER CONSUMPTION: 15µA Standby Current 15mA Active Current 5MHz
FDIP28W
PDIP28
PROGRAMMING TIME 100µs/byte HIGH RELIABILITY CMOS TECHNOLOGY 2,000V Protection 200mA Latchup Protection Immunity
PLCC32
ELECTRONIC SIGNATURE Manufacturer Code: Device Code: Figure Logic Diagram
TSOP28 13.4mm
DESCRIPTION M27W256 voltage Kbit EPROM offered ranges (ultra violet erase) (one time programmable). ideally suited microprocessor systems organized 32,768 bits. M27W256 operates read mode with supply voltage decrease operating power allows either reduction size battery increase time between battery recharges. FDIP28W (window ceramic frit-seal package) transparent which allows user expose chip ultraviolet light erase pattern. pattern then written device following programming procedure. applications where content programmed only time erasure required, M27W256 offered PDIP28, PLCC32 TSOP28 13.4 packages.
A0-A14
Q0-Q7
M27W256
AI03629
August 2002
1/15
M27W256
Figure Connections Figure Connection
AI03627
AI03626
M27W256
M27W256
A0-A14 Q0-Q7
Figure TSOP Connection
Table Signal NameAddress Inputs Data Outputs Chip Enable Output Enable Program Supply Supply Voltage Ground Connected Internally Don't
M27W256
AI03628
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M27W256
Table Absolute Maximum Ratings
Symbol TBIAS TSTG Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input Output Voltage (except Supply Voltage Voltage Program Supply Voltage Value 13.5 Unit
Note: Except rating "Operating Temperature Range", stresses above those listed Table "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only operation device these other conditions above those indicated Operating sections this specification implied. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Refer also STMicroelectronics SURE Program other relevant quality documents. Minimum voltage Input Output -0.5V with possible undershoot -2.0V period less than 20ns. Maximum voltage Output +0.5V with possible overshoot period less than 20ns. Depends range.
Table Operating ModeMode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature
Note: VIL, 0.5V.
Pulse
Q7-Q0 Data Hi-Z Data Data Hi-Z Hi-Z Code
Table Electronic Signature
Identifier Manufacturer's Code Device Code Data
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M27W256
Table Measurement ConditionHigh Speed Input Rise Fall Times Input Pulse Voltages Input Output Timing Ref. Voltages 10ns 1.5V Standard 20ns 0.4V 2.4V 0.8V
Figure Testing Input Output Waveform
Figure Testing Load Circuit
1.3V
High Speed 1.5V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
0.4V
30pF High Speed 100pF Standard includes capacitance
AI01823B
Table Capacitance MHz)
Symbol COUT Parameter Input Capacitance Output Capacitance Test Condition VOUT Unit
Note: Sampled only, 100% tested.
DEVICE OPERATION modes operation M27W256 listed Operating Modes. single power supply required read mode. inputs levels except Electronic Signature. Read Mode M27W256 control functions, both which must logically active order obtain data outputs. Chip Enable power control should used device selection. Output Enable output control should used gate data output pins, indepen-
dent device selection. Assuming that addresses stable, address access time (tAVQV) equal delay from output (tELQV). Data available output after delay tGLQV from falling edge assuming that been addresses have been stable least tAVQV-tGLQV. Standby Mode M27W256 standby mode which reduces supply current from 10mA 10µA with voltage operation 3.6V, Read Mode Characteristics table details. M27W256 placed standby mode applying CMOS high signal input. When standby mode, outputs high impedance state, independent input.
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M27W256
Table Read Mode Characteristics 85°C; 2.7V 3.6V; VCC)
Symbol ICC1 ICC2 Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) Supply Current (Standby) CMOS Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage 2.1mA -400µA Test Condition VOUT VIL, VIL, IOUT 0mA, 5MHz, 3.6V 0.2V, 3.6V -0.6 Unit
Note: must applied simultaneously with before removed simultaneously after VPP. Maximum voltage Output +0.5V.
Table Read Mode Characteristics 85°C; 2.7V 3.6V; VCC)
M27W256 Test Condition tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tACC Address Valid Output Valid Chip Enable Output Valid Output Enable Output Valid Chip Enable High Output Hi-Z Output Enable High Output Hi-Z Address Transition Output Transition VIL, VIL, -100 (-120/-150/-200)
Symbol
Parameter
Unit
3.0V 3.6V 2.7V 3.6V 2.7V 3.6V
Note: must applied simultaneously with before removed simultaneously after VPP. Sampled only, 100% tested. Speed obtained with High Speed measurement conditions.
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M27W256
Figure Read Mode Waveform
A0-A14
VALID tAVQV tAXQX
VALID
tGLQV tELQV Q0-Q7 tGHQZ Hi-Z tEHQZ
AI00758B
Line Output Control Because EPROMs usually used larger memory arrays, this product features line control function which accommodates multiple memory connection. line control function allows: lowest possible memory power dissipation, complete assurance that output contention will occur. most efficient these control lines, should decoded used primary device selecting function, while should made common connection devices array connected READ line from system control bus. This ensures that deselected memory devices their power standby mode output pins only active when data desired from particular memory device.
System Considerations power switching characteristics Advance CMOS EPROMs require careful decoupling devices. supply current, ICC, three segments that interest system designer: standby current level, active current level, transient current peaks that produced falling rising edges magnitude this transient current peaks dependent capacitive inductive loading device output. associated transient voltage peaks suppressed complying with line output control properly selected decoupling capacitors. recommended that 0.1µF ceramic capacitor used every device between VSS. This should high frequency capacitor inherent inductance should placed close device possible. addition, 4.7µF bulk electrolytic capacitor should used between every eight devices. bulk capacitor should located near power supply connection point. purpose bulk capacitor overcome voltage drop caused inductive effects traces.
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M27W256
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol Parameter Input Leakage Current Supply Current Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage Voltage 2.1mA -1mA 11.5 12.5 -0.3 Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after VPP.
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V
Symbol tAVEL tQVEL tVPHEL tVCHEL tELEH tEHQX tQXGL tGLQV tGHQZ tGHAX tVPS tVCS tOES tDFP Parameter Address Valid Chip Enable Input Valid Chip Enable High Chip Enable High Chip Enable Chip Enable Program Pulse Width Chip Enable High Input Transition Input Transition Output Enable Output Enable Output Valid Output Enable High Output Hi-Z Output Enable High Address Transition Unit
Note: must applied simultaneously with before removed simultaneously after VPP.
Programming M27W256 been designed fully compatible with M27C256B same electronic signature. result M27W256 programmed M27C256B same programming equipments applying 12.75V 6.25V same PRESTO algorithm. When delivered (and after each erasure EPROM), bits M27W256 state. Data introduced selectively programming '0's into desired locations.
Although only '0's will programmed, both '1's '0's present data word. only change exposure ultraviolet light EPROM). M27W256 programming mode when input 12.75V, pulsed VIL. data programmed applied bits parallel data output pins. levels required address data inputs TTL. specified 6.25 0.25
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M27W256
Figure Programming Verify Modes Waveform
A0-A14 tAVEL Q0-Q7 DATA tQVEL tVPHEL tVCHEL tELEH
VALID
DATA tEHQX
tGLQV
tGHQZ
tGHAX
tQXGL
PROGRAM
VERIFY
AI00759
Figure Programming Flowchart
6.25V, 12.75V
100µs Pulse VERIFY Last Addr Addr
FAIL
CHECK WORDS 1st: 2nd: 2.7V
AI00707D
PRESTO Programming Algorithm PRESTO Programming Algorithm allows program whole array with guaranteed margin, typical time seconds. Programming with PRESTO involves application sequence 100µs program pulses each byte until correct verify occurs (see Figure During programming verify operation, MARGIN MODE circuit automatically activated order guarantee that each cell programmed with enough margin. overprogram pulse applied since verify MARGIN MODE much higher than 3.6V provides necessary margin each programmed cell. Program Inhibit Programming multiple M27W256s parallel with different data also easily accomplished. Except like inputs including parallel M27W256 common. level pulse applied M27W256's input, with 12.75 will program that M27W256. high level input inhibits other M27W256s from being programmed. Program Verify verify (read) should performed programmed bits determine that they were correctly programmed. verify accomplished with VIL, VIH, 12.75V 6.25V.
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M27W256
Electronic Signature Electronic Signature (ES) mode allows reading binary code from EPROM that will identify manufacturer type. This mode intended programming equipment automatically match device programmed with corresponding programming algorithm. mode functional 25°C ambient temperature range that required when programming M27W256. activate mode, programming equipment must force 11.5V 12.5V address line M27W256, with identifier bytes then sequenced from device outputs toggling address line from VIH. other address lines must held during Electronic Signature mode. Byte VIL) represents manufacturer code byte VIH) device identifier code. STMicroelectronics M27W256, these identifier bytes given Table read-out outputs Note that M27W256 M27C256B have same identifier bytes. ERASURE OPERATION (applies EPROM) erasure characteristics M27W256 such that erasure begins when cells exposed light with wavelengths shorter than approximately 4000 should noted that sunlight some type fluorescent lamps have wavelengths 3000-4000 range. Research shows that constant exposure room level fluorescent lighting could erase typical M27W256 about years, while would take approximately week cause erasure when exposed direct sunlight. M27W256 exposed these types lighting conditions extended periods time, suggested that opaque labels over M27W256 window prevent unintentional erasure. recommended erasure procedure M27W256 exposure short wave ultraviolet light which wavelength integrated dose (i.e. intensity exposure time) erasure should minimum W-sec/cm2. erasure time with this dosage approximately minutes using ultraviolet lamp with 12000 µW/cm2 power rating. M27W256 should placed within inch) lamp tubes during erasure. Some lamps have filter their tubes which should removed before erasure.
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M27W256
Table Ordering Information Scheme
Example: Device Type Supply Voltage 2.7V 3.6V Device Function Kbit (32Kb Speed (1,2) -100 Design -120 -150 -200 Package FDIP28W PDIP28 PLCC32 TSOP28: 13.4 Temperature Range Options Tape Reel Packing
Note: High Speed, Characteristics section further information. This speed also guarantees 70ns access time 3.0V 3.6V. These speeds replaced 100ns. Packages option available request. Please contact STMicroelectronics local Sales Office.
M27W256
list available options (Speed, Package, etc.) further information aspect this device, please contact STMicroelectronics Sales Office nearest you. Table Revision History
Date 1998 July 1999 March 2000 30-Aug-2002 Version STMicroelectronics Logo Programming Flowchart clarified (Figure Document Template changed Package mechanical data clarified PDIP28 (Table 14), PLCC32 (Table Figure TSOP28 (Table Figure Revision Detail
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M27W256
Table FDIP28W Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symbol 7.11 2.54 14.99 33.02 15.24 1.45 0.51 3.91 3.89 0.41 0.23 36.50 13.06 16.18 3.18 1.52 millimeters 5.72 1.40 4.57 4.50 0.56 0.30 37.34 13.36 18.03 4.10 2.49 0.280 0.100 0.590 1.300 0.600 0.057 0.020 0.154 0.153 0.016 0.009 1.437 0.514 0.637 0.125 0.060 inches 0.225 0.055 0.180 0.177 0.022 0.012 1.470 0.526 0.710 0.161 0.098
Figure FDIP28W Ceramic Frit-seal DIP, with window, Package Outline
FDIPW-a
Drawing scale.
11/15
M27W256
Table PDIP28 Plastic DIP, mils width, Package Mechanical Data
millimeters Symbol 3.300 1.78 2.08 36.830 33.020 15.240 13.720 2.540 15.000 12.700 14.800 15.200 14.480 15.200 16.680 0.1299 0.070 0.082 4.445 0.630 3.810 0.450 1.270 0.230 36.580 0.310 37.080 1.4500 1.3000 0.6000 0.5402 0.1000 0.5906 0.5000 0.5827 0.5984 0.5701 0.5984 0.6567 3.050 4.570 0.1750 0.0248 0.1500 0.0177 0.0500 0.0091 1.4402 0.0122 1.4598 0.1201 0.1799 inche
Figure PDIP28 Plastic DIP, mils width, Package Outline
PDIP
Drawing scale.
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M27W256
Table PLCC32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symbol 0.89 10.16 1.27 7.62 12.32 11.35 4.78 14.86 13.89 6.05 0.00 millimeters 3.18 1.53 0.38 0.33 0.66 3.56 2.41 0.53 0.81 0.10 12.57 11.51 5.66 15.11 14.05 6.93 0.13 0.035 0.400 0.050 0.300 0.485 0.447 0.188 0.585 0.547 0.238 0.000 inches 0.125 0.060 0.015 0.013 0.026 0.140 0.095 0.021 0.032 0.004 0.495 0.453 0.223 0.595 0.553 0.273 0.005
Figure PLCC32 lead Plastic Leaded Chip Carrier, Package Outline
0.51 (.020) 1.14 (.045)
PLCC-A
Drawing scale. 13/15
M27W256
Table TSOP28 lead Plastic Thin Small Outline, 13.4 Package Mechanical Data
millimeters Symbol 0.550 13.200 11.700 7.900 0.500 0.950 0.170 0.100 1.250 0.200 1.150 0.270 0.210 0.100 13.600 11.900 8.100 0.700 0.0217 0.5197 0.4606 0.3110 0.0197 0.0374 0.0067 0.0039 inches 0.0492 0.0079 0.0453 0.0106 0.0083 0.0039 0.5354 0.4685 0.3189 0.0276
Figure TSOP28 lead Plastic Thin Small Outline, 13.4 Package Outline
TSOP-a
Drawing scale
14/15
M27W256
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners. 2002 STMicroelectronics Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States www.st.com
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Kbit (32Kb Voltage EPROM EPROM 2.7V 3.6V SUPPLY VOLTAGE READ OPER

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