Mbit (1Mb 512Kb Voltage EPROM EPROM 2.7V 3.6V VOLTAGE READ OPERAT
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M27W800
Mbit (1Mb 512Kb Voltage EPROM EPROM
2.7V 3.6V VOLTAGE READ OPERATION ACCESS TIME: 90ns 3.0V 3.6V 100ns 2.7V 3.6V
BYTE-WIDE WORD-WIDE CONFIGURABLE Mbit MASK REPLACEMENT POWER CONSUMPTION Active Current 30mA 8MHz Standby Current 15µA
FDIP42W
PDIP42
PROGRAMMING VOLTAGE: 12.5V 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE Manufacturer Code: Device Code: Figure Logic Diagram
PLCC44
DESCRIPTION M27W800 voltage Mbit EPROM offered ranges (ultra violet erase) (one time programmable). ideally suited microprocessor systems requiring large data program storage. organised either Mbit words Kbit words bit. pinout compatible with Mbit Mask ROM. M27W800 operates read mode with supply voltage 2.7V. decrease operating power allows either reduction size battery increase time between battery recharges. FDIP42W (window ceramic frit-seal package) transparent which allows user expose chip ultraviolet light erase pattern. pattern then written rapidly device following programming procedure. applications where content programmed only time erasure required, M27W800 offered PDIP42 PLCC44 package.
A0-A18
Q15A-1
Q0-Q14 BYTEVPP M27W800
AI03601
March 2000
1/15
M27W800
Figure ConnectionA18 M27W800
AI03602
Figure ConnectionNC BYTEVPP Q15A-1
BYTEVPP Q15A-1 M27W800
AI03603
Table Signal NameA0-A18 Q0-Q7 Q8-Q14 Q15A-1 BYTEVPP Address Inputs Data Outputs Data Outputs Data Output Address Input Chip Enable Output Enable Byte Mode Program Supply Supply Voltage Ground Connected Internally
DEVICE OPERATION operating modes M27W800 listed Operating Modes Table. single power supply required read mode. inputs compatible except Electronic Signature.
Read Mode M27W800 organisations, Word-wide Byte-wide. organisation selected signal level BYTEVPP pin. When BYTEVPP Word-wide organisation selected Q15A-1 used Data Output. When BYTEVPP Byte-wide organisation selected Q15A-1 used Address Input A-1. When memory logically regarded wide, read Byte-wide organisation, then with lower bits data selected with upper bits data selected. M27W800 control functions, both which must logically active order obtain data outputs. addition Word-wide Byte-wide organisation must selected. Chip Enable power control should used device selection. Output Enable output control should used gate data output pins independent device selection. Assuming that addresses stable, address access time (tAVQV) equal delay from output (tELQV). Data available output after delay GLQV from falling edge assuming that been addresses have been stable least tAVQV-tGLQV.
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M27W800
Table Absolute Maximum Ratings
Symbol TBIAS TSTG Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input Output Voltage (except Supply Voltage Voltage Program Supply Voltage Value 13.5 Unit
Note: Except rating "Operating Temperature Range", stresses above those listed Table "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only operation device these other conditions above those indicated Operating sections this specification implied. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Refer also STMicroelectronics SURE Program other relevant quality documents. Minimum voltage Input Output -0.5V with possible undershoot -2.0V period less than 20ns. Maximum voltage Output +0.5V with possible overshoot period less than 20ns. Depends range.
Table Operating ModeMode Read Word-wide Read Byte-wide Upper Read Byte-wide Lower Output Disable Program Verify Program Inhibit Standby Electronic Signature Pulse BYTEVPP Q15A-1 Data Hi-Z Data Data Hi-Z Hi-Z Code Q14-Q8 Data Hi-Z Hi-Z Hi-Z Data Data Hi-Z Hi-Z Codes Q7-Q0 Data Data Data Hi-Z Data Data Hi-Z Hi-Z Code
Note: VIL, 0.5V.
Table Electronic Signature
Identifier Manufacturer's Code Device Code Data
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M27W800
Table Measurement ConditionHigh Speed Input Rise Fall Times Input Pulse Voltages Input Output Timing Ref. Voltages 10ns 1.5V Standard 20ns 0.4V 2.4V 0.8V
Figure Testing Input Output Waveform
Figure Testing Load Circuit
1.3V
High Speed 1.5V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
0.4V
30pF High Speed 100pF Standard includes capacitance
AI01823B
Table Capacitance MHz)
Symbol COUT Parameter Input Capacitance (except BYTEVPP) Input Capacitance (BYTEVPP) Output Capacitance Test Condition VOUT Unit
Note: Sampled only, 100% tested.
4/15
M27W800
Table Read Mode Characteristics 3.6V; VCC)
Symbol Parameter Input Leakage Current Output Leakage Current Test Condition VOUT VIL, VIL, IOUT 0mA, 8MHz, 3.6V Supply Current VIL, VIL, IOUT 0mA, 5MHz, 3.6V Supply Current (Standby) Supply Current (Standby) CMOS Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage 2.1mA -400µA 0.2V, 3.6V -0.6 0.7VCC 0.2VCC Unit
ICC1 ICC2
Note: must applied simultaneously with before removed simultaneously after Maximum voltage Output +0.5V.
Standby Mode M27W800 standby mode which reduces supply current from 20mA 20µA with voltage operation 3.6V, Read Mode Characteristics table details.The M27W800 placed standby mode applying CMOS high signal input. When standby mode, outputs high impedance state, independent input. Line Output Control Because EPROMs usually used larger memory arrays, this product features line control function which accommodates multiple memory connection. line control function allows: lowest possible memory power dissipation, complete assurance that output contention will occur. most efficient these control lines, should decoded used primary device selecting function, while should made common connection devices array connected READ line from system control bus. This ensures that deselected memory devices their power standby mode that output pins only active when data required from particular memory device.
System Considerations power switching characteristics Advanced CMOS EPROMs require careful decoupling supplies devices. supply current three segments importance system designer: standby current, active current transient peaks that produced falling rising edges magnitude transient current peaks dependent capacitive inductive loading device outputs. associated transient voltage peaks suppressed complying with line output control properly selected decoupling capacitors. recommended that 0.1µF ceramic capacitor used every device between VSS. This should high frequency type inherent inductance should placed close possible device. addition, 4.7µF electrolytic capacitor should used between every eight devices. This capacitor should mounted near power supply connection point. purpose this capacitor overcome voltage drop caused inductive effects traces.
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M27W800
Table Read Mode Characteristics 3.6V; VCC)
M27W800 -100 Symbol Parameter Test Condition 3.6V tAVQV tBHQV tELQV tGLQV tBLQZ tEHQZ tGHQZ tAXQX tBLQX tACC tSTD Address Valid Output Valid BYTE High Output Valid Chip Enable Output Valid Output Enable Output Valid BYTE Output Hi-Z Chip Enable High Output Hi-Z Output Enable High Output Hi-Z Address Transition Output Transition BYTE Output Transition VIL, VIL, VIL, VIL, VIL, 3.6V -120 3.6V Unit
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested. Speed obtained with High Speed measurement conditions.
Figure Word-Wide Read Mode Waveform
A0-A18
VALID tAVQV tAXQX
VALID
tGLQV tELQV Q0-Q15 tGHQZ Hi-Z tEHQZ
AI01596B
Note: BYTEVPP VIH.
6/15
M27W800
Figure Byte-Wide Read Mode Waveform
A-1,A0-A18
VALID tAVQV tAXQX
VALID
tGLQV tELQV Q0-Q7 tGHQZ Hi-Z tEHQZ
AI01597B
Note: BYTEVPP VIL.
Figure BYTE Transition Waveform
A0-A18
VALID
tAVQV BYTEVPP
VALID tAXQX
tBHQV Q0-Q7 tBLQX Hi-Z Q8-Q15 tBLQZ
AI01598C
DATA
DATA
Note: Chip Enable Output Enable VIL.
7/15
M27W800
Table Programming Mode Characteristics 6.25V 0.25V; 12.5V 0.25V)
Symbol Parameter Input Leakage Current Supply Current Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage Voltage 2.1mA -2.5mA 11.5 12.5 -0.3 Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after
Table Programming Mode Characteristics 6.25V 0.25V; 12.5V 0.25V)
Symbol tAVEL tQVEL tVPHAV tVCHAV tELEH tEHQX tQXGL tGLQV tGHQZ tGHAX tVPS tVCS tOES tDFP Parameter Address Valid Chip Enable Input Valid Chip Enable High Address Valid High Address Valid Chip Enable Program Pulse Width Chip Enable High Input Transition Input Transition Output Enable Output Enable Output Valid Output Enable High Output Hi-Z Output Enable High Address Transition Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested.
Programming M27W800 been designed fully compatible with M27C800 same electronic signature. result M27W800 programmed M27C800 same programming equipments applying 12.75V 6.25V same PRESTO algorithm. When delivered (and after each erasure EPROM), bits M27W800 state. Data introduced selective-
programming '0's into desired locations. Although only '0's will programmed, both '1's '0's present data word. only change exposure ultraviolet light EPROM). M27W800 programming mode when input 12.5V, pulsed data programmed applied bits parallel data output pins. levels required address data inputs TTL. specified 6.25V 0.25V.
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M27W800
Figure Programming Verify Modes Waveform
A0-A18 tAVEL Q0-Q15 DATA tQVEL BYTEVPP tVPHAV tVCHAV tELEH
VALID
DATA tEHQX
tGLQV
tGHQZ
tGHAX
tQXGL
PROGRAM
VERIFY
AI01599
Figure Programming Flowchart
6.25V, 12.5V
50µs Pulse VERIFY Last Addr Addr
FAIL
CHECK WORDS BYTEVPP =VIH 1st: 2nd: 2.7V
AI03600
PRESTO Programming Algorithm PRESTO Programming Algorithm allows whole array programed with guaranteed margin typical time seconds. Programming with PRESTO consists applying sequence 50µs program pulses each word until correct verify occurs (see Figure During programing verify operation MARGIN MODE circuit automatically activated guarantee that each cell programed with enough margin. overprogram pulse applied since verify MARGIN MODE much higher than 3.6V provides necessary margin each programmed cell. Program Inhibit Programming multiple M27W800s parallel with different data also easily accomplished. Except like inputs including parallel M27W800 common. level pulse applied M27W800's input 12.5V, will program that M27W800. high level input inhibits other M27W800s from being programmed. Program Verify verify (read) should performed programmed bits determine that they were correctly programmed. verify accomplished with VIL, 12.5V 6.25V.
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M27W800
On-Board Programming M27W800 directly programmed application circuit. relevant Application Note AN620. Electronic Signature Electronic Signature (ES) mode allows reading binary code from EPROM that will identify manufacturer type. This mode intended programming equipment automatically match device programmed with corresponding programming algorithm. mode functional 25°C ambient temperature range that required when programming M27W800. activate mode, programming equipment must force 11.5V 12.5V address line M27W800, with identifier bytes then sequenced from device outputs toggling address line from VIH. other address lines must held during Electronic Signature mode. Byte VIL) represents manufacturer code byte VIH) device identifier code. STMicroelectronics M27W800, these identifier bytes given Table read-out outputs Note that M27W800 M27C800 have same identifier bytes. ERASURE OPERATION (applies EPROM) erasure characteristics M27W800 such that erasure begins when cells exposed light with wavelengths shorter than approximately 4000 should noted that sunlight some type fluorescent lamps have wavelengths 3000-4000 range. Research shows that constant exposure room level fluorescent lighting could erase typical M27W800 about years, while would take approximately week cause erasure when exposed direct sunlight. M27W800 exposed these types lighting conditions extended periods time, suggested that opaque labels over M27W800 window prevent unintentional erasure. recommended erasure procedure M27W800 exposure short wave ultraviolet light which wavelength 2537 integrated dose (i.e. intensity exposure time) erasure should minimum W-sec/cm erasure time with this dosage approximately minutes using ultraviolet lamp with 12000 µW/cm power rating. M27W800 should placed within 2.5cm inch) lamp tubes during erasure. Some lamps have filter their tubes which should removed before erasure.
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M27W800
Table Ordering Information Scheme
Example: Device Type Supply Voltage 3.6V Device Function Mbit (1Mb 512Kb Speed -100 (1.2) -120 -150 Tolerance blank 3.6V Package FDIP42W PDIP42 PLCC44 Temperature Range Options Tape Reel Packing M27W800 -100
Note: High Speed, Characteristics section further information. This speed also guarantees 90ns access time 3.6V. Ceramic Packages please contact Sales Offices.
list available options (Speed, Package, etc.) further information aspect this device, please contact STMicroelectronics Sales Office nearest you.
Table Revision History
Date November 1999 02/09/00 03/16/00 First Issue FDIP42W Package Dimension, added (Table Temperature range changed Standby Current ICC2 changed (Table From Product Preview Data Sheet Revision Detail
11/15
M27W800
Table FDIP42W Ceramic Frit-seal DIP, with window, Package Mechanical Data
Symb 9.40 11.43 2.54 14.99 50.80 15.24 1.45 0.51 3.91 3.89 0.41 0.23 54.41 14.50 16.18 3.18 1.52 5.72 1.40 4.57 4.50 0.56 0.30 54.86 14.90 18.03 4.10 2.49 0.370 0.450 0.100 0.590 2.000 0.600 0.057 0.020 0.154 0.153 0.016 0.009 2.142 0.571 0.637 0.125 0.060 inches 0.225 0.055 0.180 0.177 0.022 0.012 2.160 0.587 0.710 0.161 0.098
Figure FDIP42W Ceramic Frit-seal DIP, with window, Package Outline
FDIPW-b
Drawing scale.
12/15
M27W800
Table PDIP42 Plastic DIP, mils width, Package Mechanical Data
Symb 2.54 14.99 50.80 15.24 0.25 3.56 0.38 1.27 0.20 52.20 13.59 15.24 3.18 0.86 5.08 4.06 0.53 1.65 0.36 52.71 13.84 17.78 3.43 1.37 0.100 0.590 2.000 0.600 0.010 0.140 0.015 0.050 0.008 2.055 0.535 0.600 0.125 0.034 0.200 0.160 0.021 0.065 0.014 2.075 0.545 0.700 0.135 0.054 inche
Figure PDIP42 Plastic DIP, mils width, Package Outline
PDIP
Drawing scale.
13/15
M27W800
Table PLCC44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symb 0.89 1.27 4.20 2.29 0.33 0.66 17.40 16.51 14.99 17.40 16.51 14.99 0.00 0.10 4.70 3.04 0.51 0.53 0.81 17.65 16.66 16.00 17.65 16.66 16.00 0.25 0.035 0.050 0.165 0.090 0.013 0.026 0.685 0.650 0.590 0.685 0.650 0.590 0.000 0.004 0.185 0.120 0.020 0.021 0.032 0.695 0.656 0.630 0.695 0.656 0.630 0.010 inche
Figure PLCC44 lead Plastic Leaded Chip Carrier, Package Outline
0.51 (.020)
D2/E2
1.14 (.045)
PLCC
Drawing scale.
14/15
M27W800
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2000 STMicroelectronics Rights Reserved other names property their respective owners. STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com
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