N-CHANNEL 500V 3.2A DPAK IPAK PowerMeshTMII MOSFET TYPE STD3NC50
|
|
|
Top Searches for this datasheet
STD3NC50 STD3NC50-1
N-CHANNEL 500V 3.2A DPAK IPAK PowerMeshTMII MOSFET
TYPE STD3NC50 STD3NC50-1
VDSS
RDS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DPAK IPAK
DESCRIPTION PowerMESHTMII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns swithing speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt(1) Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 12.8 0.48 Unit W/°C V/ns
width limited safe operating area (1)ISD 3.2A, di/dt 100A/µs, (BR)DSS, JMAX.
2002
STD3NC50 STD3NC50-1
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. Max. Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. Max. Unit
STD3NC50 STD3NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, (see test circuit, Figure 400V, Min. Typ. 12.5 Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 100V, 150°C (see test circuit, Figure 1.64 Test Conditions Min. Typ. Max. 12.8 Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedance
STD3NC50 STD3NC50-1
Output Characteristics Tranfer Characteristics
Tranconductance
Static Drain-Source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STD3NC50 STD3NC50-1
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STD3NC50 STD3NC50-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD3NC50 STD3NC50-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD3NC50 STD3NC50-1
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.60
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.024
0.039
P032P_B
STD3NC50 STD3NC50-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2002 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
Other recent searches
MT9V034 - MT9V034 MT9V034 Datasheet
MAX6618 - MAX6618 MAX6618 Datasheet
FMS6363 - FMS6363 FMS6363 Datasheet
ACT32 - ACT32 ACT32 Datasheet
74AUC1G04 - 74AUC1G04 74AUC1G04 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
