CHANNEL 100V 0.07 TO-220 STripFETMOSFET TYPE P20NE10 DS(on)
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STP20NE10
CHANNEL 100V 0.07 TO-220 STripFETMOSFET
TYPE P20NE10
DS(on)
TYPICAL RDS(on) 0.07 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION This Power MOSFET latest development SGS-THOMSON unique "Single Feature Size" strip-based process.The resulting transistor shows extremely high packing density onresistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS SOLENOID RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor dv/dt( July 1998 Peak Diode Recovery voltage slope Storage emperature Max. perating Junction Temperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
Pulse width limited safe operating area
STP20NE10
THERMAL DATA
hj-ca
Rthj -amb
thc-
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
1.67 62.5
oC/W
AVALANCHE CHARACTERISTICS
Symb Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition Min. Max.
Zero Voltage Rating Drain Current (VGS Rating Gate-body Leakage Current
Symb GS(th) ID(o Parameter Gate Threshold Voltage Test Cond ition Min. 0.07 Max.
Static Drain-source Resistance
State Drain Current D(on) DS(on)
DYNAMIC
Symb Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test Cond ition D(on) DS(on) Min. 1600 2100 Max.
STP20NE10
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symb d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition =4.7 (see test circuit, figure Min. Max.
SWITCHING
Symb r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition =4.7 (see test circuit, figure Min. Max.
SOURCE DRAIN DIODE
Symb Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Cond ition Min. Max.
di/dt A/µs (see test circuit, figure
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area
Thermal Impedance
STP20NE10
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STP20NE10
Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP20NE10
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP20NE10
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
Dia.
P011C
STP20NE10
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical compone life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.
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