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CHANNEL 0.06 TO-220/TO-220FP STripFETPOWER MOSFET TYPE STP20NE06
Top Searches for this datasheetSTP20NE06 STP20NE06FP CHANNEL 0.06 TO-220/TO-220FP STripFETPOWER MOSFET TYPE STP20NE06 STP20NE06FP DS(on) 0.080 0.080 TYPICAL RDS(on) 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet latest development STMicroelectronics unique Single Feature Size" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VISO dv/dt Tstg June 1999 Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value STP20NE06 STP20NE06FP 0.47 di/dt A/µs, V(BR)DSS, TJMAX Unit V/ns 2000 Pulse width limited safe operating area STP20NE06/FP THERMAL DATA TO-220 thj-case thj-amb thc-sink Thermal Resistance Junction-case 2.14 62.5 TO-220FP Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting 25V) Value Unit ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified) Symbol (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current Symbol GS(th) DS(on) D(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.060 Max. 0.080 Unit State Drain Current D(on) DS(on)max DYNAMIC Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. Max. Unit STP20NE06/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbol d(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions =4.7 (see test circuit, figure Min. Typ. Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions =4.7 (see test circuit, figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, figure Test Conditions Min. Typ. Max. Unit Pulsed: Pulse duration duty cycle Pulse width limited safe operating area Safe Operating Area TO-220 Safe Operating Area TO-220FP STP20NE06/FP Thermal Impedance TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source Resistance STP20NE06/FP Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature Source-drain Diode Forward Characteristics STP20NE06/FP Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times STP20NE06/FP TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 Dia. P011C STP20NE06/FP TO-220FP MECHANICAL DATA DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 STP20NE06/FP Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com Other recent searchesSLLA179A - SLLA179A SLLA179A Datasheet SHC76 - SHC76 SHC76 Datasheet SCD26928 - SCD26928 SCD26928 Datasheet PA2711GR - PA2711GR PA2711GR Datasheet EM400X - EM400X EM400X Datasheet dsPIC33FJ256GP710 - dsPIC33FJ256GP710 dsPIC33FJ256GP710 Datasheet BC304-4 - BC304-4 BC304-4 Datasheet
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