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CHANNEL 0.06 TO-220/TO-220FP STripFETPOWER MOSFET TYPE STP20NE06L
Top Searches for this datasheetSTP20NE06L STP20NE06LFP CHANNEL 0.06 TO-220/TO-220FP STripFETPOWER MOSFET TYPE STP20NE06L STP20NE06LF 0.07 0.07 TYPICAL RDS(on) 0.06 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet latest development STMicroelectronics unique Single Feature Size" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb Parameter Value STP20NE06 dv/dt April 1999 Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Insulation ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage emperature Max. perating Junct emperature Unit P20NE06F 2000 V/ns 0.47 Pulse width limited safe operating area di/dt A/µs, V(BR)DSS, TJMAX STP20NE06L/FP THERMAL DATA TO-220 -case -amb thc-sink Thermal Resistance Junction-case 2.14 62.5 TO-220FP Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified) Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. 0.07 0.06 0.085 0.07 Typ. Max. Unit ID(o DS(on DYNAMIC Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. Max. Unit STP20NE06L/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbo d(on) Parameter Turn-on Delay Rise Time Total Charge Gate-Source Charge Gate-Drain Charge Test ditions =4.7 (see test circuit, figure Min. Typ. Max. Unit SWITCHING Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions =4.7 (see test circuit, figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit Pulsed: Pulse duration duty cycle Pulse width limited safe operating area Safe Operating Area TO-220 Safe Operating Area TO-220FP STP20NE06L/FP Thermal Impedance TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source Resistance STP20NE06L/FP Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature Source-drain Diode Forward Characteristics STP20NE06L/FP Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times STP20NE06L/FP TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 Dia. P011C STP20NE06L/FP TO-220FP MECHANICAL DATA DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 STP20NE06L/FP Information furnished believed accurate reliable. However, STMicroelect onics assumes responsibil consequences such information infringement patents other rights third partes which result from use. license granted implication otherwise under patent patent rights STMicroelectro nics. Specific ation mentioned this publication subjec change without notice. This publication supersedes replaces informaton previously supplied. STMicroelectronics products authorized critical components life support devices systems with express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysi Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com Other recent searchesXRT83L38 - XRT83L38 XRT83L38 Datasheet UF3710 - UF3710 UF3710 Datasheet U406D - U406D U406D Datasheet R2868 - R2868 R2868 Datasheet NTE5638 - NTE5638 NTE5638 Datasheet MSD1278 - MSD1278 MSD1278 Datasheet 2SA1205 - 2SA1205 2SA1205 Datasheet
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