RN2110,RN2111 With built-in bias resistors Simplify circuit desig
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RN2110,RN2111
RN2110,RN2111
With built-in bias resistors Simplify circuit design Reduce quantity parts manufacturing process Complementary RN1110, RN1111 Unit
Equivalent Circuit
Maximum Ratings 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Tstg Rating -100 -55~150 Unit
JEDEC EIAJ TOSHIBA Weight: 2.4mg
2-2H1A
Electrical Characteristics 25°C)
Characteristic Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN2110 RN2111 Symbol ICBO IEBO (sat) Test Circuit Test Condition -50V, -5V, -5V, -1mA -5mA, -0.25mA -10V, -5mA -10V, 1MHz 3.29 Typ. -0.1 -100 -100 -0.3 6.11
961001EAA2
Unit
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, observe standards safety, avoid situations which malfunction failure TOSHIBA product could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent products specifications. Also, please keep mind precautions conditions forth TOSHIBA Semiconductor Reliability Handbook. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2000-09-11
RN2110,RN2111
2000-09-11
RN2110,RN2111
2000-09-11
RN2110,RN2111
Type Name Marking
RN2110
RN2111
2000-09-11
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