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RN2010,RN2011 With built-in bias resistors Simplify circuit desig


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RN2010,RN2011
RN2010,RN2011
With built-in bias resistors Simplify circuit design Reduce quantity parts manufacturing process Complementary RN1010, RN1011 Unit:
Equivalent Circuit
Maximum Ratings 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Tstg Rating -100 -55~150 Unit
JEDEC EIAJ TOSHIBA Weight: 0.21g
TO-92 SC-43 2-5F1B
Electrical Characteristics 25°C)
Characteristic Collector cut-off current Emitter cut-off current current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN2010 RN2011 Symbol ICBO IEBO (sat) Test Circuit Test Condition -50V, -5V, -5V, -1mA -5mA, -0.25mA -10V, -5mA -10V, 1MHz 3.29 Typ. -0.1 -100 -100 -0.3 6.11
961001EAA1
Unit
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, observe standards safety, avoid situations which malfunction failure TOSHIBA product could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent products specifications. Also, please keep mind precautions conditions forth TOSHIBA Semiconductor Reliability Handbook. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2000-12-15
RN2010,RN2011
2000-12-15
RN2010,RN2011
2000-12-15

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