N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TY

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N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TY

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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET
TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
VDSS
RDS(on) 0.29 0.29 0.29 0.29
TYPICAL RDS(on) 0.25 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE
TO-220
TO-220FP
DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt(1) VISO Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I2PAK
D2PAK
INTERNAL SCHEMATIC DIAGRAM
Value STP(B)20NM60(-1) 12.6 --65
(1)ISD 20A, di/dt 400A/µs, V(BR)DSS, TJMAX. (*)Limited only maximum temperature allowed
Unit STP20NM60FP 20(*) 12.6(*) 80(*) 0.36 2500 W/°C V/ns
width limited safe operating area
February 2003
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
THERMAL DATA
TO-220/D2PAK/I2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W
Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.25 Max. 0.29 Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 400V Gate Bias=0 Test Signal Level=20mV Open Drain Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 1500 Max. Unit
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS.
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 200V, (see test circuit, Figure 400V, 20A, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 480V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM Irrm Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 25°C (see test circuit, Figure di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area TO-220/D2PAK/I2PAK
Safe Operating Area TO-220FP
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
Thermal Impedance TO-220/D2PAK/I2PAK Thermal Impedance TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-Source Resistance
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
TO-262 (I2PAK) MECHANICAL DATA
MIN. 2.49 1.14 0.45 1.23 8.95 13.1 3.48 1.27 TYP. MAX. 2.69 0.93 1.36 9.35 10.4 13.6 3.78 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
P011P5/E
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
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STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2003 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
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N-CHANNEL 600V 0.25 TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TY

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