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DM-106B
Magnetoresistance Element availability this product, please contact sales office.
Description DM-106B highly sensitive magnetoresistance element composed evaporated ferromagnetic alloy silicon substrate. (The element used automatic shut tape recorders, contactless switch, general detector rotational motion.) Features power consumption M-110 (Plastic)
(Typ.) VCC=5 magnetic field high sensitivity mVp-p (Typ.) VCC=5 H=8000 High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magnetic alloy silicon substrate
Absolute Maximum Ratings (Ta=25 Supply voltage Operating temperature Topr +100 Storage temperature Tstg +125 Recommended Operating Supply voltage
Electrical Characteristics Item Total resistance Midpoint potential Output voltage Symbol Condition VCC=5 H=8000 Revoiving magnetic field VCC=5 H=8000 Revoiving magnetic field VCC=5 H=8000 Revoiving magnetic field Min. 2.45 Typ. 2.50
(Ta=25 Max. 2.55 Unit mVp-p
Sony reserves right change products specifications without prior notice. This information does convey license implication otherwise under patents other right. Application circuits shown, any, typical examples illustrating operation devices. Sony cannot assume responsibility problems arising these circuits.
E60142D5X-TE
DM-106B
Equivalent Circuit
Resistance reduces magnetic field revolves. Resistance increases magnetic field revolves.
Introduction Power supplying output
Sensitive direction Midpoint potential
Midpoint potential Sensitive Direction Magnetic-flux Incidence
Non-sensitive
Direction Magnetic-flux Incidence
Useful Region
Changes occur output voltage saturation region curve according direction magnetic flux. These changes provide operation. With rotation magnetic flux, signals periods obtained.
DM-106B
Applications Detection revolution
Position detecting
Circuits
Differenntial Amplifier
Bridge Circuits
Output
coupling pieces back back sticking them together gridge, output voltage doubled.
Notes Application Execute solder lead line within seconds temperature below ELEMENTS When glue used, apply mechanical stress elements.
DM-106B
Midpoint potential Magnetic field intensity 2.55 VCC=5V
Midpoint potential Direction magnetic-flux incidence 2.55 2.54 2.53 VCC=5V H=12000A/m Output
2.53
VC-Midpoint potential
2.54
106B
VC-Midpoint potential
2.52 2.51 2.50
2.52 2.51 2.50 2.49 2.48 106B 2.47 2.46
2.48 2.47 2.46 2.45 4000 8000 12000
2.49
106B
16000
2.45
H-Revolving magnetic field intensity (A/m)
-Direction magnetic-flux incidence (deg)
Output voltage Magnetic field intensity VCC=5V
Total resistance, output voltage Temperature
VO-Output voltage (mVp-p)
VO-Output voltage (mVp-p)
4000 8000 12000 16000
H-Revolving magnetic field intensity (A/m) Ta-Ambient temperature (°C)
Derating Curve
VCC=10V
IIN-Input current (mA)
Ta-Ambient temperature (°C)
RT-Total Resistance
H=8000A/m (Revolving magnetic field) VCC=5V
DM-106B
Package Outline
Unit
M-110
1.27
1.27
0.25
SONY CODE EIAJ CODE JEDEC CODE
M-110
PACKAGE WEIGHT
0.09g

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