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CHANNEL 100V 0.14 TO-220 POWER TRANSISTOR TYPE STP16N10L DS(
Top Searches for this datasheetSTP16N10L CHANNEL 100V 0.14 TO-220 POWER TRANSISTOR TYPE STP16N10L DS(on) 0.16 TYPICAL RDS(on) 0.14 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol dV/dt( March 1999 Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value Unit V/ns STP16N10L THERMAL DATA thj-case thj-amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose 1.67 62.5 AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified) Symbol (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current Symbol GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.14 0.12 Max. 0.16 0.14 Unit D(on) State Drain Current D(on) DS(on)max DYNAMIC Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. 1100 Max. Unit STP16N10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Conditions Min. Typ. Max. Unit Pulsed: Pulse duration duty cycle Pulse width limited safe operating area STP16N10L TO-220 MECHANICAL DATA DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 Dia. P011C STP16N10L Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com Other recent searchesTA49071 - TA49071 TA49071 Datasheet Si2323DS - Si2323DS Si2323DS Datasheet NL17SZ06 - NL17SZ06 NL17SZ06 Datasheet MAX691C - MAX691C MAX691C Datasheet HCMS-235x - HCMS-235x HCMS-235x Datasheet ED-111YGU - ED-111YGU ED-111YGU Datasheet ECN3061 - ECN3061 ECN3061 Datasheet
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