CHANNEL 100V DPAK/IPAK STripFETPOWER MOSFET TYPE STD5NE10L D

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CHANNEL 100V DPAK/IPAK STripFETPOWER MOSFET TYPE STD5NE10L D

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STD5NE10L
CHANNEL 100V DPAK/IPAK STripFETPOWER MOSFET
TYPE STD5NE10L
DS(on)
TYPICAL RDS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TAPE REEL OTHER PACKAGING OPTIONS CONTACT SALES OFFICES
IPAK TO-251 (Suffix "-1")
DPAK TO-252
(Suffix "T4")
DESCRIPTION This Power MOSFET latest development STMicroelectronics unique Single Feature Size" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL (DISK DRIVES,etc.) DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb dv/dt( Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating actor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction emperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
Unit V/ns
Pulse width limited safe operating area
October 1998
STD5NE10L
THERMAL DATA
-case -amb thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Max. Unit
Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Test ditions Min. 0.35 Max. 0.45 Unit
Static Drain-source Resistance State Drain Current ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test ditions ID(o DS(on =2.5 Min. Max. Unit
STD5NE10L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test ditions Min. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test ditions Min. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test ditions Min. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD5NE10L
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD5NE10L
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD5NE10L
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

CHANNEL 100V DPAK/IPAK STripFETPOWER MOSFET TYPE STD5NE10L D

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