CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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STD3NB50
CHANNEL 500V IPAK/DPAK PowerMESHMOSFET
PRELIMINARY DATA TYPE STD3NB50
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DPAK TO-252
(Suffix "T4")
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, SGS-Thomson designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprietary edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE
IPAK TO-251 (Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( 1998 Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value
di/dt A/µs, V(BR)DSS, TJMAX
Unit V/ns
Pulse width limited safe operating area
This preliminary information product development undergoing evaluation. Details subject change without notice.
STD3NB50
THERMAL DATA
thj-case
Rthj-amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
oC/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions =1.9 Min. Typ. Max. Unit
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. Max. Unit
STD3NB50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions =3.8 Min. Typ. Max. Unit
SWITCHING
Symbol r(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Conditions Min. Typ. Max. 15.2 Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD3NB50
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD3NB50
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD3NB50
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

CHANNEL 500V IPAK/DPAK PowerMESHMOSFET PRELIMINARY DATA TYPE STD3

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