CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET TARGET D
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STP16NE06L STP16NE06L/FP
CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET
TARGET DATA TYPE STP16NE06L STP16NE06LFP
DS(on) 0.12 0.12
TYPICAL RDS(on) 0.09 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
DESCRIPTION This Power Mosfet latest development SGS-THOMSON unique "Single Feature Size" process whereby single body implanted strip layout structure. resulting transistor shows extremely high packing density onresistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dV/dt Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value STP16NE06L STP16NE06LFP
di/dt A/µs, V(BR)DSS, TJMAX
Unit 2000 V/ns
Pulse width limited safe operating area
October 1997
STP16NE06L/FP
THERMAL DATA
TO-220 thj-case thj-amb thc-sink Thermal Resistance Junction-case 62.5 TO-220FP
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.090 Max. 0.12 Unit
ID(on)
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. Max. Unit
STP16NE06L/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions =4.7 Min. Typ. Max. Unit
SWITCHING
Symbol r(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions =4.7 Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STP16NE06L/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NE06L/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP16NE06L/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NE06L/FP
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics Printed Italy Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A
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