N-CHANNEL 200V 0.15 TO-220/TO-220FP/I2PAK PowerMESHMOSFET TYPE ST
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STP19NB20 STP19NB20FP STB19NB20-1
N-CHANNEL 200V 0.15 TO-220/TO-220FP/I2PAK PowerMESHMOSFET
TYPE STP19NB20 STP19NB20FP STB19NB20-1
VDSS
RDS(on) 0.18 0.18 0.18
TYPICAL RDS(on) 0.15 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION Using latest high voltage MESH OVERLAYprocess, STMicroelectronics designed advanced family power MOSFETs with outstanding performances. patent pending strip layout coupled with Company's proprieraty edge termination structure, gives lowest RDS(on) area, exceptional avalanche dv/dt capabilities unrivalled gate charge switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS TELECOM, INDUSTRIAL CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt VISO Tstg August 2002 Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
(Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM
Value STP(B)19NB20(-1)
(1)ISD di/dt 300A/µs, (BR)DSS, JMAX
Unit STP19NB20FP 0.28 2500 W/°C V/ns 1/12
width limited safe operating area
STP19NB20/FP/STB19NB20-1
THERMAL DATA
TO-220/I2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 62.5 TO-220FP 3.57 °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. 0.15 Max. 0.18 Unit
DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. 1000 Typ. Max. Unit
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STP19NB20/FP/STB19NB20-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 100V, (see test circuit, Figure 160V, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 160V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 50V, 150°C (see test circuit, Figure 14.5 Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area TO-220/I2PAK
Safe Operating Area TO-220FP
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STP19NB20/FP/STB19NB20-1
Thermal Impedance TO-220/I2PAK Thermal Impedance TO-220FP
Output Characteristics
Tranfer Characteristics
Tranconductance
Static Drain-Source Resistance
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STP19NB20/FP/STB19NB20-1
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage Temp.
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
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STP19NB20/FP/STB19NB20-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
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STP19NB20/FP/STB19NB20-1
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
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STP19NB20/FP/STB19NB20-1
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
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STP19NB20/FP/STB19NB20-1
TO-262 (I2PAK) MECHANICAL DATA
MIN. 2.49 1.14 0.45 1.23 8.95 13.1 3.48 1.27 TYP. MAX. 2.69 0.93 1.36 9.35 10.4 13.6 3.78 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
P011P5/E
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STP19NB20/FP/STB19NB20-1
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP19NB20/FP/STB19NB20-1
FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
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STP19NB20/FP/STB19NB20-1
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2002 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States. http://www.st.com
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