CHANNEL 0.08 TO-220/TO-220FP STripFETPOWER MOSFET PRELIMINARY DAT
|
|
|
Top Searches for this datasheet
STP16NE06 STP16NE06FP
CHANNEL 0.08 TO-220/TO-220FP STripFETPOWER MOSFET
PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP
DS(on) 0.100 0.100
TYPICAL RDS(on) 0.08 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
DESCRIPTION This Power Mosfet latest development SGS-THOMSON unique "Single Feature Size" process whereby single body implanted strip layout structure. resulting transistor shows extremely high packing density onresistance, rugged avalance characteristics less critical alignment steps therefore remarkable manufacturing reproducibility. APPLICATIONS MOTOR CONTROL DC-DC DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dV/dt Parameter Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
di/dt A/µs, V(BR)DSS, TJMAX
Value STP16NE06 STP16NE06FP 2000
Unit
V/ns
Pulse width limited safe operating area (on) spec. starting from JULY
June 1998
STP16NE06/FP
THERMAL DATA
TO-220 thj-case thj-amb thc-sink Thermal Resistance Junction-case 62.5 TO-220FP
Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.080 Max. 0.100 Unit
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. 1000 Max. Unit
STP16NE06/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions =4.7 Min. Typ. Max. Unit
SWITCHING
Symbol r(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions =4.7 Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 0.21 Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Area TO-220
Safe Operating Area TO-220FP
STP16NE06/FP
Thermal Impedance TO-220 Thermal Impedance TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source Resistance
STP16NE06/FP
Gate Charge Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STP16NE06/FP
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STP16NE06/FP
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP16NE06/FP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
STP16NE06/FP
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A.
Other recent searches
T4000 - T4000 T4000 Datasheet
SPP11N60S5 - SPP11N60S5 SPP11N60S5 Datasheet
SPI11N60S5 - SPI11N60S5 SPI11N60S5 Datasheet
SN74LS298 - SN74LS298 SN74LS298 Datasheet
M30627FHPFP - M30627FHPFP M30627FHPFP Datasheet
CMS-S032-020 - CMS-S032-020 CMS-S032-020 Datasheet
CD4724BMS - CD4724BMS CD4724BMS Datasheet
AST-01508MR-R - AST-01508MR-R AST-01508MR-R Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
