SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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2SA1020
SILICON EPITAXIAL TRANSISTOR
2SA1020 designed power amplifier power switching applications.
FEATURES
*Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.) *Complement 2SC2655
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE
+150
UNIT
Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature TSTG Mounted cermic substrate( 250mm2 0.8t
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector cut-off current Emitter cut-off current Collector emitter breakdown voltage Current Gain Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time
SYMBOL
ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) tstg
TEST CONDITIONS
VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz
-1.0 -1.0
UNIT
-0.5 -1.2
UNISONIC TECHNOLOGIES
QW-R208-021,A
2SA1020
RANK RANGE
CLASSIFICATION hFE1
TYPICAL PERFORMANCE CHARACTERISTICS
VCE-IC Collector Emitter Voltage I(tot) -120 -160 -0.4 -0.2 -200 Collector Emitter Voltage -1.0 -0.8 -0.6 -1.0 -0.8 -0.6 -0.4 -0.2
VCE-IC
IB=-5mA
IB=-5mA
-40I(tot)
-120 -160 -180 -200
COMMON EMITTER Ta=25 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) VCE-IC
COMMON EMITTER Ta=100 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) hFE-Ic COMMON EMITTER VCE=-2V I(tot)
-1.0 Collector Emitter Voltage IB=-10mA -0.8 I(tot) -0.6 -0.4 -0.2 COMMON EMITTER Ta=-55 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A)
1000 Current Gain Ta=100
-120 -160 -200
-0.4
-0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A)
UNISONIC TECHNOLOGIES
QW-R208-021,A
2SA1020
Collector -Emitter Saturation Voltage VCE(sat) -0.5 -0.3
VCE(sat)-Ic Collector -Emitter Saturation Voltage VBE(sat) VCE(sat)-Ic COMMON EMITTER IC/IB=20 I(tot)
COMMON EMITTER IC/IB=20 I(tot) Ta=100
-0.1 -0.05 -0.03
-0.5 -0.3
Ta=100
-0.01 -0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A) -VBE
-0.1 -0.005 -0.01
-0.3 -0.03 -0.1 Collector Current IC(A) Pc-Ta
-2.0 Collector Current
Collector Power Dissipatoin Pc,(W)
COMMON EMITTER VCE=-2V I(tot)
Ambient Temperature 1.Mounted Ceramic Substrate (250mm2*0.8t) I(tot) 2.Ta=25
-1.5 Ta=100 -1.0
-0.5
-0.4 -1.6 -0.8 -1.2 Base Emitter Voltage VBE(V) Safe Operation Area
Collector Current -0.5 -0.3 -0.1 -0.05 -0.03 -0.01
max.(pulsed)* max.(pulsed)*
10ms* 1ms*
OPERATION Ta=25
*Single nonrepetitive pulse Ta=25 Curves must derated linearly with increase temperature
VCEO -100 -0.3 Collector Emitter Voltage
UNISONIC TECHNOLOGIES
QW-R208-021,A
2SA1020
assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications products described contained herein. products designed life support appliances, devices systems where malfunction these products reasonably expected result personal injury. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice.
UNISONIC TECHNOLOGIES
QW-R208-021,A

SILICON EPITAXIAL TRANSISTOR 2SA1020 designed power amplifier pow

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