Vishay Semiconductor Dual P-Channel Logic Level Enhancement-Mode
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GF2M303
Vishay Semiconductor
Dual P-Channel Logic Level Enhancement-Mode MOSFET
SOT-23-6L
0.122 (3.10) 0.114 (2.90)
-20V RDS(ON) 0.135 -2.3A
View
0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50)
Configuration (Top View)
0.020 (0.50) 0.010 (0.25) 0.037 (0.95) 0.075 (1.90)
Dimensions inches (millimeters)
TRENOGY CHNOLET GENF Mounting Layout
0.028 (0.7)
0.039 (1.07) 0.004 (0.10) 0.0005 (0.013) 0.039 (1.00) 0.036 (0.90) 0.008 (0.20) 0.004 (0.10) 0.094 (2.4)
Typical
0.037 (0.95) Ref. 0.074 (1.9) Ref.
Mechanical Data
Case: SOT-23-6L package Terminals: Leads solderable MIL-STD-750, Method 2026 Marking Code:
Features
Advanced trench process technology High density cell design ultra on-resistance Popular SOT-23-6L package with copper lead-frame superior thermal electrical capabilities Compact profile -1.8V rated
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(2) 150°C Pulsed Drain Current
25°C unless otherwise noted)
Symbol 25°C 70°C 25°C 70°C
Limit
Unit
1.15 0.73
Maximum Power Dissipation(2)
Tstg
°C/W
Operating Junction Storage Temperature Range Junction-to-Ambient Thermal Resistance
Note: Pulse width limited maximum junction temperature. Surface mounted 1in2 2oz. (FR-4 material)
Document Number 74517 5-Dec-01
www.vishay.com
GF2M303
Vishay Semiconductor Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance Forward Transconductance(1) Dynamic Total Gate Charge(1) Gate-Source Charge(1) Gate-Drain Charge Turn-OnRise Time
25°C unless otherwise noted)
Symbol BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) td(on) td(off) Ciss Coss Crss
Test Condition -250µA VGS, -250µA ±8V, -16V, -16V, =0V, 85°C -5V, -4.5V -4.5V, -2.3A -2.5V, -2.0A -1.8V, -1.7A -5V, -2.3A
-0.45
-8.8 -0.85
Unit mV/°C
BVDSS/TJ Reference 25°C, -1mA
-1.3 -1.1
-10V, -4.5V -2.3A
Turn-On Delay Time
-8V, -1A, VGEN -4.5V -10V, 1.0MHZ
Turn-Off Delay Time(1) Turn-OffFall Time(1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Maximum Pulsed Diode Forward Current Diode Forward Voltage(1)
Notes: Pulse test; pulse width 300µs, duty cycle Pulse width limited maximum junction temperature
25°C -1.05A
Switching Test Circuit
Switching Waveforms
td(on) VOUT Output, VOUT
toff td(off)
VGEN
Input,
INVERTED PULSE WIDTH
www.vishay.com
Document Number 74517 5-Dec-01
GF2M303
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
3.5V, 4.0V, 4.5V, 5.0V 3.0V 2.5V 2.0V
Fig. Transfer Characteristics
Drain-to-Source Current
Drain Source Current
-55°C 25°C
125°C
1.5V
1.0V
-VDS Drain-to-Source Voltage
-VGS Gate-to-Source Voltage
-VGS(th) Gate-to-Source Threshold Voltage (Normalized)
Fig. Threshold Voltage Temperature
-250µA
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
-1.8V
-2.5V -4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
RDS(ON) On-Resistance (Normalized)
Fig. On-Resistance Gate-to-Source Voltage
2.3A
RDS(ON) On-Resistance
-4.5V -2.3A
125°C 25°C
Junction Temperature (°C) Document Number 74517 5-Dec-01
Gate-to-Source Voltage www.vishay.com
GF2M303
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
-10A -2.3A
Fig. Capacitance
1MHZ
-VGS Gate-to-Source Voltage
Capacitance (pF)
CISS
COSS CRSS
Gate Charge (nC)
Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Thermal Impedance
(norm) Normalized Thermal Impedance
Source Current
125°C 25°C
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 110°C/W
-55°C
0.01
0.001 0.0001 0.001
0.01
Source-to-Drain Voltage
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 110°C/W 25°C
Fig. Maximum Safe Operating Area
RDS(ON) Limit
Drain Current
Power
10ms -10V Single Pulse 110°C/W 25°C
0.0001
0.001
0.01
0.01
Pulse Duration (sec.)
-VDS Drain-Source Voltage
www.vishay.com
Document Number 74517 5-Dec-01
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