Vishay Semiconductor RDS(ON) 3.6A P-Channel Enhancement-Mode

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Vishay Semiconductor RDS(ON) 3.6A P-Channel Enhancement-Mode

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GFC654
Vishay Semiconductor
RDS(ON) 3.6A
P-Channel Enhancement-Mode MOSFET
SOT-23-6L
0.122 (3.10) 0.114 (2.90)
View
0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50)
RENFET
Configuration (Top View)
0.020 (0.50) 0.010 (0.25) 0.037 (0.95) 0.075 (1.90)
Dimensions inches (millimeters)
Mounting Layout
0.028 (0.7) 0.039 (1.07) 0.008 (0.20) 0.004 (0.10)
0.004 (0.10) 0.0005 (0.013)
0.039 (1.00) 0.036 (0.90)
0.094 (2.4)
Typical
0.037 (0.95) Ref. 0.074 (1.9) Ref.
Mechanical Data
Case: SOT-23-6L package Terminals: Leads solderable MIL-STD-750, Method 2026 Marking Code:
Features
Advanced trench process technology High density cell design ultra on-resistance Popular SOT-23-6L package with copper lead-frame superior thermal electrical capabilities Compact profile
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150°C Pulsed Drain Current Power Dissipation 150°C
25°C unless otherwise noted)
Symbol 25°C 70°C 25°C 70°C
Limit
Unit
62.5
Tstg
°C/W
Operating Junction Storage Temperature Range Junction-to-Ambient Thermal Resistance
Notes: Pulse width limited maximum junction temperature Surface mounted board, sec.
Document Number 74553 5-Dec-01
www.vishay.com
GFC654
Vishay Semiconductor Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Maximum Pulsed Diode Forward Current Diode Forward Voltage -1.3A, 125°C 25°C -0.85 -0.64 -1.3 -1.2 Turn-On Delay Time
25°C unless otherwise noted)
Symbol BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) td(on) td(off) Ciss Coss Crss
Test Condition -250µA VGS, -250µA -24V, VDS=-20V, VGS=0V, TJ=55°C -5V, -4.5V -10V, -3.6A 125°C -4.5V, -2.7A -10V, -3.6A
12.5
Unit
-1.0 -10.0
-15V, -10V -3.6A
-15V -1A, VGEN -10V -15V, 1.0MHZ
Note: Pulse test, pulse width duty cycle Pulse width limited maximum junction temperature
Switching Test Circuit
Switching Waveforms
td(on) VOUT Output, VOUT
toff td(off)
VGEN
Input,
INVERTED PULSE WIDTH
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Document Number 74553 5-Dec-01
GFC654
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
-4.0V
Fig. Transfer Characteristics
-10V -55°C 25°C
Drain-to-Source Current
-4.5V, -5V, -6V, -7V, -8V, -10.0V
Drain Current
-3.5V
125°C
-3.0V -2.5V
-VDS Drain-to-Source Voltage
-VGS Gate-to-Source Voltage
Fig. Threshold Voltage
-V(th) Gate-to-Source Threshold Voltage (Normalized)
-250µA 0.18
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
0.12
-4.5V 0.06 -10.0V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
-10V -3.6A
Fig. On-Resistance Gate-to-Source Voltage
-3.6A
RDS(ON) On-Resistance
RDS(ON) On-Resistance (Normalized)
25°C
125°C
Junction Temperature (°C)
-VGS Gate-to-Source Voltage
Document Number 74553 5-Dec-01
www.vishay.com
GFC654
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
-15V -3.6A
Fig. Capacitance
1MHz
Gate-to-Source Voltage
Ciss
Capacitance (pF)
Crss Coss
Gate Charge (nC)
-VDS Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Transient Thermal Impedance
Source Current
125°C 25°C
0.05 0.02 0.01 Single Pulse
-55°C
Duty Cycle, t1/t2 RJA(t) RJA(norm) *RJA 78°C/W PDM* RJA(t)
0.01
-VSD Source-to-Drain Voltage
Fig. Power Pulse Duration
0.001 0.01 Single Pulse 78°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
-10V Single Pulse 78°C/W 25°C
0.01
-VDS Drain-Source Voltage
www.vishay.com
Document Number 74553 5-Dec-01

Vishay Semiconductor RDS(ON) 3.6A P-Channel Enhancement-Mode

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