FEATURES Microsemi .COM MCE545 high breakdown, high gain, di
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MCE545 WAFFLE PACK
FEATURES
Microsemi .COM
MCE545 high breakdown, high gain, discrete silicon bipolar transistor, shipped waffle pack.
High FTau-1.4GHz
High Breakdown BVCEO
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
ABSOLUTE MAXIMUM RATINGS
IMPORTANT: most current data, consult MICROSEMI's website: http://www.microsemi.com
Gold Back Metal
APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS
LNA, Oscillator, Pre-Driver
Value
Unit
STATIC ELECTRICAL SPECIFICATIONS (TCASE
Symbol BVCEO BVCBO BVEBO ICBO ICES Test Conditions Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage (IC= mAdc, IE=0) Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Current Gain mAdc, Vdc) Min. Typ.
MCE545
Value Max. Unit
MCE545 WAFFLE PACK
DYNAMIC
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE
Test Conditions Current-Gain Bandwidth Product mAdc, Vdc, MHz) Value Typ. Min.
Symbol
Max.
Unit
1000
1400
Copyright
2001
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
Page
MCE545 WAFFLE PACK
DIMENSIONS
Microsemi .COM
Metal: Gold Back Metal: Gold
Emitter
Base
SELECTOR GUIDE
MCE545 MCE544 MC1309 MC1333
Closest Packaged Equivalent MRF545 MRF544 MMBR5031LT1/2N5031 MRF581/MRF5812R1/BFR96
TYPE
400mA 400mA 20mA 200mA
Ftau 1.4GHz 1.4GHz 2GHz 5GHz
NFmin Small Signal Gain 14dB/200MHz 13.5dB/200MHz 12dB/400MHz 2.5dB/500MHz 14dB/500MHz
MCE545 WAFFLE PACK
MC1012 MC1826 MC1343 MC1333
Closest Packaged Equivalent SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559
TYPE
ICMAX 640mA 200mA 200mA
Pout 4W/175MHz 3W/470MHz 0.75W/870MHz 0.5W/870MHz
Gain 12dB/175MHz 9.5dB/470MHz 8dB/870MHz 8dB/870MHz
Copyright
2001
Products Division Commerce Drive, Montgomeryville 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
Page
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