TYPE STP19N06L STP19N06LFI VDSS DS(on) TYPICAL RDS(on)

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TYPE STP19N06L STP19N06LFI VDSS DS(on) TYPICAL RDS(on)

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STP19N06L STP19N06LFI
TYPE STP19N06L STP19N06LFI
VDSS
DS(on)
TYPICAL RDS(on) 0.085 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
TO-220
ISOWATT220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS REGULATORS DC-DC DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP19N06L Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
Value STP19N06LFI 0.53 0.23 2000
Unit
Pulse width limited safe operating area
February 1995
STP19N06L/FI
THERMAL DATA
TO-220 thj-case thj-amb hc-sink Thermal Resistance Junction-case 1.88 62.5 Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose ISOWATT220 4.29
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max, Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. 1000 Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) D(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions 100o Min. Typ. 0.085 Max. Unit
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max Min. Typ. Max. Unit
STP19N06L/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbol r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 0.13 di/dt A/µs (see test circuit, figure Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STP19N06L/FI
Fig. Unclamped Inductive Load Test Circuits
Fig. Unclamped Inductive Waveforms
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge Test Circuit
Fig. Test Circuit Inductive Load Switching Diode Reverse Recovery Time
STP19N06L/FI
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
STP19N06L/FI
ISOWATT220 MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
P011G
STP19N06L/FI
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

TYPE STP19N06L STP19N06LFI VDSS DS(on) TYPICAL RDS(on)

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