TYPE STP21N05L STP21N05LFI VDSS DS(on) 0.085 0.085 TYPI

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TYPE STP21N05L STP21N05LFI VDSS DS(on) 0.085 0.085 TYPI

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STP21N05L STP21N05LFI
TYPE STP21N05L STP21N05LFI
VDSS
DS(on) 0.085 0.085
TYPICAL RDS(on) 0.065 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
TO-220
ISOWATT220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID RELAY DRIVERS REGULATORS DC-DC DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP21N05L Drain-source Voltage Drain- gate Voltage Gate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) Total Dissipation Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
Value STP21N05LFI 0.53 0.23 2000
Unit
Pulse width limited safe operating area
July 1993
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STP21N05L/FI
THERMAL DATA
TO-220 thj-case thj-amb hc-sink Thermal Resistance Junction-case 1.88 62.5 Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose ISOWATT220 4.29
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Repetitive Avalanche Energy (pulse width limited max, Avalanche Current, Repetitive Not-Repetitive pulse width limited max, Value Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions Min. 1000 Typ. Max. Unit
Zero Gate Voltage Rating Drain Current Rating Gate-body Leakage Current
Symbol GS(th) DS(on) D(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. Typ. 0.065 Max. 0.085 0.17 Unit
10.5 10.5 100o
State Drain Current D(on) DS(on)max
DYNAMIC
Symbol Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions D(on) DS(on)max 10.5 Min. Typ. 1000 Max. Unit
2/10
STP21N05L/FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbol d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions 10.5 (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING
Symbol r(Vof Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions (see test circuit, figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 0.13 di/dt A/µs (see test circuit, figure Test Conditions Min. Typ. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
Safe Operating Areas
Safe Operating Areas
3/10
STP21N05L/FI
Thermal Impedeance TO-220
Thermal Impedance ISOWATT220
Derating Curve TO-220
Derating Curve ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
STP21N05L/FI
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage Temperature
Normalized Resistance Temperature
5/10
STP21N05L/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STP21N05L/FI
Fig. Unclamped Inductive Load Test Circuits
Fig. Unclamped Inductive Waveforms
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge Test Circuit
Fig. Test Circuit Inductive Load Switching Diode Reverse Recovery Time
7/10
STP21N05L/FI
TO-220 MECHANICAL DATA
DIM. MIN. DIA. 13.0 2.65 15.25 3.75 0.49 0.61 1.14 1.14 4.95 10.0 16.4 14.0 2.95 15.75 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
Dia.
P011C
8/10
STP21N05L/FI
ISOWATT220 MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
P011G
9/10
STP21N05L/FI
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized critical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A
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TYPE STP21N05L STP21N05LFI VDSS DS(on) 0.085 0.085 TYPI

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