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TYPE 7NA80 STH7NA80F DS(on) TYPICAL RDS(on) 1.68 GATE SOURCE
Top Searches for this datasheetSTW7NA80 STH7NA80FI TYPE 7NA80 STH7NA80F DS(on) TYPICAL RDS(on) 1.68 GATE SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA 100oC INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu W7NA80 Drain-source Voltage (VGS Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Insulation ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Unit STH7NA80FI 0.48 4000 Pulse width limited safe operating area October 1998 1/10 STW7NA80-STH7NA80FI THERMAL DATA TO-247 -case -amb thc-sink Thermal Resistance Junction-case 0.83 ISOWATT 2.08 Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max, Single Pulse Avalanche Energy (starting Value Unit ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified) Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Typ. Max. Unit Rating Zero Gate Voltage Drain Current Rating Gate-body Leakage Current (VDS Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test ditions Min. 2.25 Typ. 1.68 Max. 3.75 Unit ID(o DS(on DYNAMIC Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test ditions ID(o DS(on Min. Typ. 1330 1750 Max. Unit 2/10 STW7NA80-STH7NA80FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbo d(on) (di/dt) Parameter Turn-on Time Rise Time Turn-on Current Slope Test ditions (see test circuit, figure (see test circuit, figure Min. Typ. Max. Unit A/µs Total Charge Gate-Source Charge Gate-Drain Charge SWITCHING Symbo (Voff) Parameter Off-voltage Rise Fall Cross-over Time Test ditions (see test circuit, figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs (see test circuit, figure Test ditions Min. Typ. Max. Unit Pulsed: Pulse duration duty cycle Pulse width limited safe operating area Safe Operating Area TO-247 Safe Operating Area ISOWATT218 3/10 STW7NA80-STH7NA80FI Thermal Impedance TO-247 Thermal Impedance ISOWATT218 Derating Curve TO-247 Derating Curve ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW7NA80-STH7NA80FI Transconductance Static Drain-source Resistance Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temperature Normalized Resistance Temperature 5/10 STW7NA80-STH7NA80FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW7NA80-STH7NA80FI Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuits Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times 7/10 STW7NA80-STH7NA80FI TO-247 MECHANICAL DATA MIN. 3.55 15.3 19.7 14.2 34.6 3.65 0.079 0.140 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 8/10 STW7NA80-STH7NA80FI ISOWATT218 MECHANICAL DATA DIM. MIN. 5.35 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 TYP. MAX. 5.65 2.08 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 P025C 9/10 STW7NA80-STH7NA80FI Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1998 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com 10/10 Other recent searchesUNRF2A3 - UNRF2A3 UNRF2A3 Datasheet SR820 - SR820 SR820 Datasheet SR860 - SR860 SR860 Datasheet NJU3430 - NJU3430 NJU3430 Datasheet NJU3430FG1 - NJU3430FG1 NJU3430FG1 Datasheet MSM63182A - MSM63182A MSM63182A Datasheet MLX10803 - MLX10803 MLX10803 Datasheet DSW1054-A - DSW1054-A DSW1054-A Datasheet PCS1900 - PCS1900 PCS1900 Datasheet DCS1800 - DCS1800 DCS1800 Datasheet BAR63V-02V - BAR63V-02V BAR63V-02V Datasheet APM9435K - APM9435K APM9435K Datasheet 74LVC162373A - 74LVC162373A 74LVC162373A Datasheet 74LVCH162373A - 74LVCH162373A 74LVCH162373A Datasheet
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