Vishay Semiconductor RDS(ON) 0.20 1.14A N-Channel Enhancemen

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Vishay Semiconductor RDS(ON) 0.20 1.14A N-Channel Enhancemen

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GF2402
Vishay Semiconductor
RDS(ON) 0.20 1.14A
N-Channel Enhancement-Mode MOSFET
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) .056 (1.43) .052 (1.33)
View
NCHT TRENFE
0.031 (0.8)
0.035 (0.9) 0.079 (2.0)
Configuration
Gate Source Drain
max. .004 (0.1)
0.037 (0.95)
0.037 (0.95)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15) .037 (0.95)
Mounting Layout
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions inches (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code:
Features
Advanced trench process technology High density cell design ultra-low on-resistance Popular SOT-23 package Compact profile threshold voltage Logic level Fast switching
Maximum Ratings Thermal Characteristics
Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current 150°C Pulsed Drain Current Power 150°C Dissipation 25°C 70°C 25°C 70°C Symbol Tstg
25°C unless otherwise noted)
Limit
Unit °C/W
1.14 0.91 +150
Operating Junction Storage Temperature Range Junction-to-Ambient Thermal Resistance
Notes: Pulse width limited maximum junction temperature. Surface mounted 1in2 2oz. (FR-4 material)
Document Number ##### 26-Nov-01
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GF2402
Vishay Semiconductor Electrical Characteristics
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Gate-Drain Charge Charge td(on) Time td(off) Ciss Coss Crss Current 1.0MHZ 20V, VGEN 20V, 4.5V 1.0A 0.35 0.55 0.77 1.05 BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) 10µA VGS, 250µA 16V, VDS=16V, VGS=0V, TJ=125°C 4.5V, 4.5V, 0.6A 2.5V, 0.6A 16V, 0.6A
25°C unless otherwise noted)
Symbol
Test Condition
Unit
Turn-On Delay Time Rise Time Turn-Off Delay Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Maximum Pulsed Diode Forward Diode Forward Voltage
25°C 0.5A,
Note: Pulse test; pulse width 300µs, duty cycle Pulse width limited maximum junction temperature
toff
Switching Test Circuit
VGEN
VOUT
Switching Waveforms
td(on)
td(off)
INVERTED
Output, VOUT
Input,
PULSE WIDTH
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Document Number ##### 26-Nov-01
GF2402
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Output Characteristics
VGS= 3.5V, 4.0V, 4.5V, 6.0V, 8.0V, 10.0V 2.5V
Fig. Transfer Characteristics
Drain Source Current
Drain Source Current
3.0V
-55°C
125°C 25°C
2.0V
1.5V
Drain-to-Source Voltage
Gate-to-Source Voltage
VGS(th) Gate-to-Source Threshold Voltage (Normalized)
Fig. Threshold Voltage Temperature
250µA
Fig. On-Resistance Drain Current
RDS(ON) On-Resistance
2.5V 4.5V
Junction Temperature (°C)
Drain Current
Fig. On-Resistance Junction Temperature
4.5V 0.6A
Fig. On-Resistance Gate-to-Source Voltage
0.6A
RDS(ON) On-Resistance (Normalized)
RDS(ON) On-Resistance
125°C 25°C
Junction Temperature (°C)
Gate-to-Source Voltage
Document Number ##### 26-Nov-01
www.vishay.com
GF2402
Vishay Semiconductor Ratings Characteristic Curves
25°C unless otherwise noted)
Fig. Gate Charge
1.0A
Fig. Capacitance
1MHz
Gate-to-Source Voltage
Capacitance (pF)
Ciss
Coss Crss
Gate Charge (nC)
Drain-to-Source Voltage
Fig. Source-Drain Diode Forward Voltage
Fig. Transient Thermal Impedance
RJA(norm) Normalized Thermal Impedance
0.05 0.02 0.01 0.01 Single Pulse Duty Cycle, t1/t2 RJA(norm) *RJA 300°C/W 0.001 0.01
Source Current
125°C
25°C
-55°C
0.01
0.001 0.0001
Source-to-Drain Voltage
Pulse Duration (sec.)
Fig. Power Pulse Duration
Single Pulse 300°C/W 25°C
Fig. Maximum Safe Operating Area
Drain Current
RDS(ON) Limit
Power
4.5V Single Pulse 300°C/W 25°C 0.01
0.0001
0.001
0.01
Pulse Duration (sec.)
Drain-Source Voltage
www.vishay.com
Document Number ##### 26-Nov-01

Vishay Semiconductor RDS(ON) 0.20 1.14A N-Channel Enhancemen

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