µPA1756 DESCRIPTION This product Dual N-Channel Field Effect
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FIELD EFFECT TRANSISTOR
µPA1756
DESCRIPTION
This product Dual N-Channel Field Effect Transistor designed power management application notebook computers, Li-ion battery application.
PACKAGE DRAWING (Unit
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
FEATURES
Dual chips small package 2.5-V gate drive type on-resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss Ciss TYP. Built-in protection diode Small surface mount package (Power SOP8)
±0.3
Max.
1.44
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
+0.10 -0.05
PA1756G
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) Tstg
±12.0 ±6.0 +150
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation unit) Total Power Dissipation unit) Channel Temperature Storage Temperature
Gate
Body Diode
Gate Protection Diode
Source
Notes Duty Cycle Mounted ceramic substrate 2000 Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D12909EJ2V0DS00 (2nd edition) Date Published 2001 Printed Japan
mark shows major revised points.
1999
µPA1756
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS ±12.0 3.0A VGS(on) 1050 1200 MIN. TYP. 20.0 25.8 MAX. UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
td(on) td(off) toff
TEST CIRCUIT GATE CHARGE
D.U.T.
VGS(on)
Wave Form
Duty Cycle
Wave Form
Data Sheet D12909EJ2V0DS
µPA1756
TYPICAL CHARACTERISTICS
1000
rth(t) Transient Thermal Resistance °C/W
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
0.01 0.001
Mounted ceramic substrate 2000 Single Pulse unit
1000
Pulse Width
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
VDS=10V Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
ID=3A
Drain Current
RDS(on) Drain Source On-State Resistance
Gate Source Voltage GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
VGS=2.5V VGS=4V VGS=4.5V
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Drain Current
Channel Temperature
Data Sheet D12909EJ2V0DS
µPA1756
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
VGS=2.5V VGS=4V
VGS=4V VGS=2.5V VGS=0V
VGS=4.5V
Channel Temperature CAPACITANCE DRAIN SOURCE VOLTAGE
Source Drain Voltage
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Ciss Coss
Crss
=10V VGS(on)
Drain Source Voltage
Drain Current
Drain Source Voltage
VDD=16V
Gate Charge
Data Sheet D12909EJ2V0DS
Gate Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1756
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Total Power Dissipation W/package
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE unit unit Mounted ceramic substrate 2000mm 1.1mm
Percentage Rated Power
Ambient Temperature
Ambient Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
FORWARD BIAS SAFE OPERATING AREA
Mounted ceramic substrate ID(pulse) 2000 unit ID(DC)
Drain Current
VGS=4V VGS=4.5V VGS=2.5V
25°C Single Pulse 0.01
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
TA=150°C 125°C 75°C
TA=25°C -25°C -50°C
VDS=10V
Gate Source Voltage
Data Sheet D12909EJ2V0DS
µPA1756
[MEMO]
Data Sheet D12909EJ2V0DS
µPA1756
[MEMO]
Data Sheet D12909EJ2V0DS
µPA1756
information this document current May, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).
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