Features High Speed Switching On-Resistance Secondary Breakdown D

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Features High Speed Switching On-Resistance Secondary Breakdown D

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2SK1821-01M
Features
High Speed Switching On-Resistance Secondary Breakdown Driving Power High Voltage Guarantee Avalanche Proof
N-channel MOS-FET
600V
Outline Drawing
Applications
Switching Regulators DC-DC converters General Purpose Power Amplifier
Maximum Ratings Characteristics
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating Storage Temperature Range Symbol D(puls) Rating +150 Unit
Equivalent Circuit
Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol (BR)DSS GS(th)
DS(on) d(on) d(off)
Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1A VGS=10V ID=1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=2A VGS=10V RGS=25 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
Min.
Typ. 0,92
Max. 1,41
Unit
Thermal Characteristics Item Thermal Resistance
Symbol th(ch-a) th(ch-c)
Test conditions channel channel case
Min.
Typ.
Max. 62,5 4,167
Unit °C/W °C/W
Fuji Semiconductor, Inc. -FUJI ELECTRIC702708 Dallas, 75370 972-733-1700 Fax: 069-66 29-56 P.O. GmbH; Lyoner D-60528 Frankfurt; Tel: 069-66 29-0; www.fujisemiconductor.com
N-channel MOS-FET
600V
2SK1821-01M
Drain-Source-On-State Resistance Typical Transfer Characteristics
Characteristics
Typical Output Characteristics
RDS(ON)
[°C]
Typical
Typical Forward Transconductance
Gate Threshold Voltage
RDS(ON)
VGS(th)
[°C]
Typical Capacitance
Safe operation area
Forward Characteristics Reverse Diode
[nF]
Allowable Power Dissipation
Zth(ch-c) [K/W]
Transient Thermal impedance
[°C]
This specification subject change without notice!
Fuji Semiconductor, Inc. P.O. 702708 Dallas, 75370 972-733-1700 www.fujisemiconductor.com

Features High Speed Switching On-Resistance Secondary Breakdown D

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